DE102016123535A1 - Component with a radiation-emitting optoelectronic component - Google Patents

Abstract

The invention relates to a component (1) having a radiation-emitting optoelectronic component (2), wherein the component (2) is arranged with a lower side on an upper side (30) of a first carrier (3), wherein the first carrier (3) is transparent to the radiation of the component (2) is arranged, wherein the first carrier (3) with a lower side (31) is arranged on an upper side (13) of a second carrier (4), wherein the second carrier (4) second electrical contacts (10, 11), wherein the second electrical contacts (10, 11) via electrical lines (16, 17) with electrical contacts (14, 15) of the component (2) are connected.

Description

The invention relates to a component with a radiation-emitting optoelectronic component according to patent claim 1 and a method for producing a component according to patent claim 17.

In the prior art, it is known to arrange a component with a semiconductor chip and a sapphire substrate on a silver-plated QFN lead frame. The semiconductor chip with the sapphire substrate sits directly on the lead frame without cavity. The semiconductor chip is contacted via bonding wires and surrounded by a cladding made of silicone with converter material.

The object of the invention is to provide an improved component and an improved method for producing the component.

The objects of the invention are solved by the independent claims.

In the dependent claims further embodiments of the invention are given.

An advantage of the proposed device is that fewer loss surfaces are provided for the electromagnetic radiation in the vicinity of the emission surfaces. As a result, a higher light output is achieved. In addition, the proposed component can be produced easily and inexpensively.

It is proposed a component with a radiation-emitting optoelectronic component, wherein the component is arranged with a lower side on an upper side of a first carrier. The first carrier is transparent to the electromagnetic radiation of the component. The first carrier is arranged with a lower side on an upper side of a second carrier. The second carrier has second electrical contacts, wherein the second electrical contacts are connected via electrical lines with electrical contacts of the component. An upper side of the component and side surfaces of the component are provided with a protective layer. The protective layer is transparent to the radiation of the component.

The arrangement of the first carrier between the optoelectronic component and the second carrier, a larger distance between the second carrier, which always represents a loss surface for the electromagnetic radiation of the device. Even with a mirror layer, the second carrier has only a limited reflectivity for the electromagnetic radiation and represents a loss surface. Due to the arrangement of the first carrier, losses in the emission of electromagnetic radiation are reduced.

In another embodiment, the underside of the first carrier has a smaller area than the top of the second carrier. As a result, not the entire upper side of the second carrier is covered with the first carrier, but nevertheless a desired distance between the component and the second carrier is realized. The first carrier is arranged, for example, centrally on the second carrier.

In a further embodiment, the second carrier has two leadframe sections, which are embedded in a carrier material. In this case, the two lead frame sections may form the second electrical contacts, wherein in each case one electrical line is connected to an upper side of a leadframe section. The second sides of the leadframe sections, e.g. are arranged on the lower side of the second carrier, can represent electrical connections of the component.

In one embodiment, the first carrier is arranged on at least one, in particular on both leadframe sections. This achieves a stable arrangement of the first carrier on the second carrier.

In a further embodiment, the first carrier has an upper side which has at least one size of the underside of the component. As a result, the component with the entire underside is supported by the first carrier. This achieves a stable arrangement and a radiation guidance for the electromagnetic radiation which is the same over the surface of the underside of the component.

In a further embodiment, the first carrier has inclined side surfaces. The side surfaces may be inclined inwardly from the underside of the carrier towards the top of the first carrier. In a further embodiment, the side surfaces of the first carrier are arranged inclined from the bottom of the first carrier in the direction of the top of the first carrier to the outside. Both embodiments can contribute to an increase in the radiated light output.

In a further embodiment, the first carrier is connected to the component and / or to the second carrier via a connecting layer, in particular via an adhesive layer. As a result, a stable and simple construction of the component can be achieved. In addition, the adhesive layer can consist of a material which is transparent to the electromagnetic radiation of the component. Thus, by providing the adhesive layer, the Radiation of electromagnetic radiation is not or hardly influenced.

In a further embodiment, the first carrier has a recess, wherein the component is at least partially disposed in the recess. As a result, a simple construction of the component can be achieved. The component can be easily inserted into the recess.

In a further embodiment, the recess is formed continuously through the first carrier. In this embodiment, the component can protrude laterally beyond the recess and over the side surfaces of the first carrier. By means of this embodiment, a simple and rapid assembly of the component in the first carrier can be achieved. In addition, material of the first carrier can be saved without significantly affecting the radiation of the electromagnetic radiation with respect to a larger first carrier.

In one embodiment, the device has a semiconductor layer structure with an active zone for generating electromagnetic radiation. In addition, the component has a carrier substrate on which the semiconductor layer structure is arranged. The carrier substrate is preferably transparent to the electromagnetic radiation of the semiconductor layer structure. Carrier substrate may for example consist of sapphire.

In one embodiment, the component has the semiconductor layer structure and the carrier substrate, wherein the semiconductor layer structure faces the first carrier. The semiconductor layer structure may be connected to the first carrier directly or via a connection layer. The first carrier has vias. The vias are connected to electrical contacts of the device. In addition, the plated-through holes are connected to the electrical contacts of the second carrier.

In one embodiment, the first carrier has, adjacent to the component and / or adjacent to the second carrier, at least one region with a smaller refractive index than the material of the first carrier. This improves the radiation transition. The area with the smaller refractive index can be realized by a further recess in the first carrier. The further recess may be filled with a substance, in particular with a gas. In addition, the further recesses may be filled with air or have a vacuum. However, other materials may also be contained in the further recesses, which have a smaller refractive index than the material of the first carrier. The further recesses may be in the form of a rough surface or in the form of randomly distributed structures. The further recesses may have depths of a few microns to several 100 microns or larger.

Radiation losses during the transition of the electromagnetic radiation between the component and the first carrier and / or between the first carrier and the second carrier are reduced by the further recesses. In this case, the entire upper side of the first carrier and / or the entire lower side of the first carrier may be provided with regions with smaller refractive indices. In this case, only a large additional recess or a plurality of smaller further recesses may be provided on the upper side and / or on the underside of the first carrier. The larger the area of the further recesses on the upper side and / or on the underside of the first carrier, the lower the radiation losses during the transition from the component into the first carrier and from the first carrier to the second carrier.

The above-described and / or reproduced in the dependent claims advantageous embodiments and refinements of the invention can be used individually or in any combination with each other.

• 1 einen schematischen Querschnitt durch eine erste Ausführungsform eines Bauteils,
• 2 einen Querschnitt durch eine zweite Ausführungsform eines Bauteils,
• 3 einen Querschnitt durch eine dritte Ausführungsform eines Bauteils,
• 4 einen Querschnitt durch eine vierte Ausführungsform eines Bauteils,
• 5 eine schematische Darstellung eines ersten Montageverfahrens,
• 6 einen schematischen Querschnitt durch ein Bauteil, das gemäß dem Montageverfahren der 5 hergestellt wurde,
• 7 eine schematische Darstellung eines zweiten Montageverfahrens,
• 8 einen Querschnitt durch ein Bauteil, das gemäß dem Verfahren der 7 hergestellt wurde,
• 9 eine weitere Ausführungsform eines Bauteils mit einem ersten Träger mit Durchkontaktierungen, und
• 10 eine schematische Darstellung eines weiteren Ausführungsbeispiels mit Ausnehmungen an Seitenflächen des ersten Trägers.

The above-described characteristics, features, and advantages of this invention, as well as the manner in which they will be achieved, will become clearer and more clearly understood in connection with the following description of exemplary embodiments which will be described in conjunction with the schematic drawings. Show it:

• 1 a schematic cross section through a first embodiment of a component,
• 2 a cross section through a second embodiment of a component,
• 3 a cross section through a third embodiment of a component,
• 4 a cross section through a fourth embodiment of a component,
• 5 a schematic representation of a first assembly method,
• 6 a schematic cross section through a component, according to the assembly method of 5 was produced,
• 7 a schematic representation of a second assembly method,
• 8th a cross section through a component, which according to the method of 7 was produced,
• 9 a further embodiment of a component with a first carrier with vias, and
• 10 a schematic representation of another embodiment with recesses on side surfaces of the first carrier.

1 shows in a schematic cross section a first embodiment of a component 1 , where the component 1 a radiation-emitting optoelectronic component 2 having. The component 2 is with a base on a top of a first vehicle 3 arranged. The first carrier 3 is transparent to the radiation of the component. The first carrier 3 is with a base on a top of a second vehicle 4 arranged. The second carrier 4 may be intransparent to the radiation of the device. In addition, the component 2 and the first carrier 3 with a protective layer in the form of an envelope 5 Mistake. The protective layer 5 may be conversion material for converting the wavelength of the electromagnetic radiation of the device 2 exhibit.

The component 2 is designed, for example, as a light-emitting diode or as a laser diode. In the illustrated embodiment, the device 2 a semiconductor layer structure 6 formed with a plurality of semiconductor layers, wherein a p / n boundary layer is formed, which is formed as an active zone to generate electromagnetic radiation in a power supply. The semiconductor layer structure 6 is on a carrier substrate 7 arranged. The carrier substrate 7 is made of one for the electromagnetic radiation of the semiconductor layer structure 6 formed transparent material. For example, the carrier substrate 7 made of sapphire. The semiconductor layer structure 6 is on an upper side of the carrier substrate 7 arranged. The underside of the carrier substrate 7 is with the top of the first carrier 3 connected. This can be a first connection layer 8th between the underside of the carrier substrate 7 and the top of the first carrier 3 be provided. The carrier substrate 7 may have a thickness which is less than 1 mm, in particular less than 0.5 mm. Depending on the chosen design may be on the carrier substrate 7 be waived. In this embodiment, the semiconductor structure 6 with the first carrier 3 directly or via the first connection layer 8th connected.

In addition, between the bottom of the first carrier 3 and the top of the second carrier 4 a second connection layer 9 be provided. The first and the second connection layer 8th . 9 For example, they are designed as adhesive layers and in particular have a low-breaking silicone. Low refractive index silicone having an index of refraction between 1.41 and 1.43 has a substantially constant Young's modulus of about 2 MPa (-40 ° C ~ 2.53 MPa; + 25 ° C) over a temperature range of -40 ° C to 100 ° C ~ 2.05MPa; + 100 ° C ~ 2.54MPa). LRI silicone is therefore advantageous, since it can be used for gap-free joining at temperatures relevant in practice. The connecting layers 8th . 9 can also be made of others for the electromagnetic radiation of the device 2 consist of transparent materials.

The protective layer 5 covers the top and sides of the device 2 , In addition, the protective layer covers 4 the side surfaces of the first carrier 3 , The top of the first vehicle 3 is from the component 2 covered. The component 2 has a square base, ie the underside and the top of the component 2 are square. The component 2 has the same footprint as the first carrier 3 on and is square shaped. Depending on the chosen embodiment, the base surfaces of the component 2 and the first carrier 3 also have different shapes and sizes. Preferably, the first carrier 3 a footprint that is at least as large as the footprint of the component 2 , In addition, the component 2 preferably centrally on the first carrier 3 arranged.

The protective layer 5 may have silicone or epoxy resin, being in the protective layer 5 Also conversion material can be embedded. The conversion material is designed to be the wavelength of the electromagnetic radiation of the component 2 to move at least partially.

The second carrier 4 has two leadframe sections in the illustrated embodiment 10 . 11 on that in a substrate 12 are embedded. A top 13 of the second carrier 4 may comprise a reflective layer or a mirror layer. The carrier material 12 can consist of a white, especially highly reflective material. The carrier material 12 may be formed as a molding material. The second carrier 4 has a square base area which is larger than the base area of the first carrier 3 , The first carrier 3 is centered on the second carrier 4 arranged. The second carrier 4 can also have other shapes of base surfaces, in particular rectangular or round base surfaces. In addition, also the first carrier 3 and the device 2 have other forms of base surfaces.

The component 2 is designed as a volume emitter, the electromagnetic radiation in all directions, that is, upward, laterally and downwardly toward the first carrier 3 emits. The semiconductor layer structure 6 has electrical contacts 14 . 15 on top of that Semiconductor layer structure 6 are arranged. The first electrical contact 14 is over a first bonding wire 16 with an upper side of the first lead frame section 10 electrically connected. The second electrical contact 15 is via a second bonding wire 17 with an upper side of the second lead frame section 11 electrically connected. subpages 18 . 19 the ladder frame sections 10 . 11 borders on the underside of the second carrier 4 and provide electrical contacts of the component 1 represents.

The first carrier 3 lies on the first and the second leadframe section 10 . 11 on. The first carrier 3 can also only on a lead frame section or on any lead frame section, but only on the substrate 12 rest. The first carrier 3 For example, glass or a low refractive index material such as quartz, PMMA, magnesium chloride may be or may be formed therefrom. The glass may have a refractive index in the range of 1.5. In addition, the first carrier 3 but also have higher refractive transparent material such as sapphire or consist thereof. The first carrier 3 may have a thickness in the range of 0.3 mm and 10 mm or more.

The second carrier 4 can also be realized for example in the form of a printed circuit board or other substrate. Furthermore, it is not necessary that the second carrier 4 having electrical contacts in the form of vias. The electrical contacts of the second carrier 4 may also be on the top, sides and / or bottom of the second carrier 4 be educated. In addition, instead of the bonding wires 16 . 17 Other forms of electrical wiring between the electrical contacts 14 . 15 of the component 2 and the electrical contacts of the second carrier 4 be provided.

2 shows a further embodiment of a component 1 which is essentially the embodiment of the 1 However, in this embodiment, the first carrier 3 inclined side surfaces 21 . 22 . 23 that points from the bottom towards the top to the component 2 are arranged inclined inwards. The angle of inclination can be, for example, between 89 ° and 30 °. Depending on the selected embodiment, all side surfaces or only individual side surfaces of the first carrier 3 may be arranged inclined.

3 shows a further embodiment of a component 1 which are essentially in accordance with the 1 is formed, but in this embodiment, the side surfaces 21 . 22 , 23 starting from the bottom in the direction of the top to the component 2 are arranged outwardly inclined. The angle of inclination can be, for example, between 89 ° and 30 °. Depending on the selected embodiment, all side surfaces or only individual side surfaces of the first carrier 3 may be arranged inclined. The obliquely inclined side surfaces of the first carrier 3 improve the light extraction.

4 shows a schematic cross section through a further embodiment of a component 1 , which is essentially according to the embodiment of the 1 is formed, but in this embodiment, the first carrier 3 a larger base area with a greater length and / or a smaller width than the component 2 having. In addition, the first carrier 3 a smaller base with a smaller length and / or a smaller width than the second carrier 4 on. In addition, the first and / or the second connection layer 8th . 9 different thermal expansion coefficients between the component 2 , the first carrier 3 and the second carrier 4 compensate. This balance can be applied to all other embodiments using the interconnect layers 8th . 9 be achieved.

5 shows a schematic representation of an assembly method in which a component 2 in a recess 25 a first carrier 3 is inserted. The first carrier 3 may consist of a larger plate, in particular of a glass wafer 26 have been cut out. 5 shows a section of a glass wafer 26 with a variety of recesses 25 , The glass wafer 26 can be in several single first carrier 3 be separated. In the illustrated embodiment, the recess 25 through the entire thickness of the first carrier 3 or the glass wafer 26 guided. Thus, the device 2 laterally with an end face in the recess 25 of the first carrier 3 be inserted. The first carrier 3 may also be made of the other materials described above instead of glass.

6 shows in a schematic cross section a component 1, which is a first carrier 3 with a recess 25 having. The component 2 is laterally in the first carrier 3 inserted. In this embodiment, the component 2 protrudes from the recess on both sides 25 out. Depending on the selected size of the component 2 can the component 2 also only in the recess 25 be arranged or only on one side of the recess 25 protrude. The component 2 can via a bonding layer, in particular an adhesive layer with a lower surface 27 the recess 25 be mechanically connected. Between the bottom of the component 2 and the area 27 the recess 25 of the first carrier 3 can be a first connection layer 8th be educated. The connection layer 8th can be between all surfaces the recess and the component 2 be educated. The first carrier 3 is over a second connection layer 9 with the second carrier 4 mechanically connected. Furthermore, a protective layer 5 provided on the top of the second carrier 4 is applied and the device 2 and the first carrier 3 covered. The protective layer 5 can be formed with or without conversion material.

7 shows in a schematic representation of another assembly method in which a component 2 in a recess 25 of a first carrier 3 is inserted. In this embodiment, the recess 25 designed as a one-sided recess. In addition, the component 2 with the bottom 35, facing the electrical contacts 14 . 15 is arranged in the recess 25 inserted. Also in this embodiment, the device 2 with a tie layer with the first carrier 3 be mechanically connected. Also in this embodiment, the first carrier 3 be formed from each of the described materials.

8th shows in a schematic cross section a component 1, which with the assembly method according to 7 was produced. This is the component 2 in the recess 25 of the first carrier 3 , A bottom of the device 2 is for example via a first connection layer 8th with a lower surface 27 the recess 25 of the first carrier 3 mechanically connected. In addition, the first carrier 3 mechanically via a second connection layer 9 connected to the second carrier 4. Furthermore, a protective layer 5 provided on the top of the second carrier 4 is applied and the device 2 and the first carrier 3 covered. The protective layer 5 can be formed with or without conversion material.

9 shows in a schematic cross section a further embodiment of a component 1 , In this embodiment, the device 2 with the top 36 the semiconductor layer structure 6 on which the electrical contacts 14 . 15 are arranged on the top of the first carrier 3 arranged. In addition, a first connection layer 8th between the semiconductor layer structure 6 of the component 2 and the first carrier 3 educated. Furthermore, the first carrier 3 in the illustrated embodiment has two plated-through holes 28 . 29 on. The vias 28 . 29 are formed of an electrically conductive material and each having an upper side with the first and with the second electrical contact 14 . 15 of the component 2 in connection. Bottoms of the vias 28 . 29 each stand with a top of the lead frame sections 10 . 11 in connection. Thus, the electrical contacts 14 . 15 over the vias 28 . 29 of the first carrier 3 with the ladder frame sections 10 . 11 of the second carrier 4 and thus with the electrical contacts of the second carrier 4 electrically conductive connected.

The first and the second connection layer 8th . 9 may be formed in all embodiments as a metal-to-metal compound, as an adhesive bond, as a solder joint, as a welded joint or as a press connection.

10 shows in a cross-sectional view of another form of a component 1 , The component 1 essentially shows the embodiment of the component 1 of the 1 on. In contrast to the embodiment of 1 is at a top 30 of the first carrier 3 on which the component 2 is arranged, and at a bottom 31 of the first carrier 3 that on the second carrier 4 is arranged, at least one area in the first carrier 3 provided, which has a lower refractive index. The areas 32 . 33 . 34 are shown in the form of partial spheres. Depending on the chosen embodiment, the ranges 32 . 33 . 34 have different shapes. For example, the areas 32 . 33 . 34 in the form of narrow strips, partial spherical shapes and any other type of shape. The areas 32 . 33 . 34 may be formed for example in the form of recesses. The recesses may also be formed in the form of an increased roughness or in the form of hairline cracks. Depending on the chosen embodiment may be in the areas 32 . 33 . 34 another substance than the material of the first carrier 3 be provided. In particular, the areas can be realized in the form of recesses, wherein in the recesses air or gas such as helium is included. Thus, the first carrier 3 in the embodiment of the 10 a structured top 30 and / or a textured bottom 31 on, with the top and bottom with areas 32 . 33 . 34 are structured with a lower refractive index. Due to the lower refractive index, the reflection properties at the interfaces of the top and the bottom of the first carrier 3 improved. The top of the second vehicle 4 is also preferably provided in this embodiment with a mirror layer or with a highly reflective layer.

The second carrier 4 For example, it may be formed from a ceramic or as a QFN substrate. The interconnect layers may be formed, for example, of adhesive layers with a transparent, low refractive material to provide reflection of light back toward the device. In addition, there should be an absorption of light on the top of the second carrier 4 be reduced or avoided. Furthermore, the first carrier 3 optionally mirrored on one or more sides or coated with partially reflective layers.

When using alternative materials for the formation of the first carrier 3 such as magnesium fluoride, calcium fluoride, silicone, Ormocer or quartz, the refractive index is also less than the refractive index of glass.

Depending on the selected assembly order, the component may first 2 on the first carrier 3 be mounted and then the first carrier 3 on the second carrier 4 to be assembled. In addition, depending on the chosen embodiment, first the first carrier 3 on the second carrier 4 and then the device 2 on the first carrier 3 to be assembled.

Depending on the chosen embodiment, the recesses in the areas of the top and the bottom of the first carrier 3 also be arranged adjacent to the connecting layers 8, 9. In this embodiment, the recesses have corresponding depths, so that cavities with air inclusions or gas inclusions occur during assembly. As a result, it is not necessary to introduce a separate material into the recesses or separate materials in the formation of the first carrier 3 on the top and / or bottom of the first carrier 3 provided.

With the described invention, limited thicknesses of the carrier substrate 7 which, for example, when using sapphire in the range of a maximum of 0.5 mm, using the first carrier 3 be enlarged.

LIST OF REFERENCE NUMBERS

1

component

2

module

3

first carrier

4

second carrier

5

protective layer

6

Semiconductor layer structure

7

carrier substrate

8th

first connection layer

9

second connection layer

10

first ladder frame section

11

second ladder frame section

12

support material

13

top

14

first electrical contact

15

second electrical contact

16

first bonding wire

17

second bonding wire

18

Bottom first ladder frame section

19

Bottom second ladder frame section

21

first side surface

22

second side surface

23

third side surface

25

recess

26

glass wafer

27

area

28

first via

29

second via

30

Top of first carrier

31

Bottom of first carrier

32

first area

33

second area

34

third area

35

Bottom component

36

Top side component

Claims (20)

Component (1) with a radiation-emitting optoelectronic component (2), wherein the component (2) is arranged with a lower side on an upper side (30) of a first carrier (3), wherein the first carrier (3) transparent to the radiation of the component (2), the first carrier (3) having a lower side (31) being arranged on an upper side (13) of a second carrier (4), the second carrier (4) having second electrical contacts (10, 11), wherein the second electrical contacts (10, 11) via electrical lines (16, 17) with electrical contacts (14, 15) of the component (2) are connected. Component (1) after Claim 1 in that the underside (31) of the first carrier (3) has a smaller area than the upper side (13) of the second carrier (4). Component (1) according to one of the preceding claims, wherein the second carrier (4) has two leadframe sections (10, 11) which are embedded in a carrier material (12). Component (1) after Claim 3 , wherein the first carrier (3) on at least one, in particular on both leadframe portions (10, 11) is arranged. Component (1) according to one of the preceding claims, wherein the first carrier (3) has an upper side (30) which has at least the size of the underside of the component (2). Component (1) according to one of the preceding claims, wherein the first carrier (3) has inclined side surfaces (21, 22, 23). Component (1) according to one of the preceding claims, wherein the first carrier (3) via a connecting layer (8, 9), in particular via an adhesive layer to the component (2) and / or with the second carrier (4) is connected. Component (1) according to one of the preceding claims, wherein the first carrier (3) has a recess (25), wherein the component (2) is arranged at least partially in the recess (25). Component (1) after Claim 8 wherein the recess (25) is formed through the first carrier (3). Component (1) after Claim 9 , wherein the component (1) projects laterally beyond the recess (25) on two sides of the first carrier (3). Component (1) according to one of the preceding claims, wherein the component (2) has a semiconductor layer structure (6) with an active zone for generating an electromagnetic radiation and a carrier substrate (7), wherein the semiconductor layer structure (6) on the carrier substrate (7). is arranged, and wherein the carrier substrate (7) is transparent to the radiation of the semiconductor layer structure (6). Component (1) after Claim 11 wherein the semiconductor layer structure (6) faces the first carrier (3), and wherein in particular the first carrier (3) has vias (28, 29), wherein the vias (28, 29) the electrical contacts of the device with the electrical contacts connect the second carrier. Component (1) according to one of the preceding claims, wherein the first carrier (3) adjacent to the component (2) and / or to the second carrier (4) at least one region (32, 33, 34) with respect to the material of first carrier (3) has a smaller refractive index. Component (1) after Claim 13 wherein the region (32, 33, 34) is formed by a further recess (32, 33, 34) in the first carrier (3). Component (1) after Claim 14 , wherein the further recess (32, 33, 34) is filled with a substance, in particular with a gas, which has a smaller refractive index than the material of the first carrier (3). Component according to one of the preceding claims, wherein an upper side of the component (2) and side surfaces of the component (2) are provided with a protective layer (5), wherein the protective layer (5) is transparent to the radiation of the component (2) Method for producing a component (1) according to one of the preceding claims, wherein a radiation-emitting optoelectronic component (2) is provided, wherein a first carrier (3) is provided, wherein the first carrier (3) is transparent to the radiation of the component (2 ), wherein a second carrier (4) is provided, wherein the component (2) is arranged on an upper side (30) of the first carrier (3), the first carrier (3) having a lower side (31) on an upper side (13) of a second carrier (4) is arranged, wherein the second electrical contacts of the second carrier (4) via electrical lines with electrical contacts (14, 15) of the component (2) are connected. Method according to Claim 17 , wherein the first carrier (3) via a connecting layer (8, 9), in particular via an adhesive layer with the component (2) and / or with the second carrier (4) is connected. Method according to one of Claims 17 or 18 wherein the first carrier (3) has a recess (25), wherein the component (2) is inserted at least partially into the recess (25). Method according to one of Claims 17 to 19 wherein the device (2) comprises a semiconductor layer structure (6) and a carrier substrate (7), wherein the semiconductor layer structure is arranged on the carrier substrate (7), and wherein the carrier substrate (7) is transparent to the radiation of the semiconductor layer structure, wherein the semiconductor layer structure (6) facing the first carrier (3) during assembly, and wherein the first carrier (3) has vias (28, 29), wherein the vias (28, 29) the electrical contacts of the semiconductor layer structure with electrical second contacts of the second Connect carrier (4).

Images