DE102016105491A1 - MANUFACTURE OF SEMICONDUCTOR COMPONENTS - Google Patents

Abstract

The invention relates to a method for producing surface mount semiconductor devices. The method comprises providing a metallic conductor structure, the conductor structure having front-side conductor sections arranged in a first plane, rear-side conductor sections arranged in a second plane offset from the first plane, connecting elements connecting between the front-side and rear-side conductor sections, and connecting elements connecting the rear-side conductor sections. It is further provided a forming of the conductor pattern with a molding compound, so that a carrier is provided with a front and a back, wherein the front conductor portions at the front and the rear conductor portions at the back of the carrier are exposed. The method further comprises arranging semiconductor chips on the front side of the carrier and performing a singulation process. In this case, the carrier is severed in the region of the connecting elements and the rear conductor sections and isolated surface-mountable semiconductor components are formed. The invention further relates to a surface mountable semiconductor device and a display device.

Description

The present invention relates to a method of manufacturing surface mount semiconductor devices. The invention further relates to a surface mountable semiconductor device and a display device.

At major events such as concerts as well as in modern arenas and stadiums so-called video walls are used. These are display surfaces, which are made up of several display modules. A display module has a printed circuit board on which a plurality of light-emitting semiconductor components is arranged. The semiconductor components are realized in the form of light emitting diodes (LEDs, light emitting diode).

For applications in the outdoor sector, it is necessary to protect the electrical connections of the light-emitting semiconductor components from external environmental influences. A common measure is to place a protective potting material in areas between the semiconductor devices on a printed circuit board of a module (potting). Currently, display modules of video walls are mainly constructed with so-called through-hole LEDs. These components have a plastic body from which project pins. The plastic body may have a height of, for example, more than 3mm. As a result, a potting of a required thickness of, for example, 2 mm can be formed.

LEDs, which are realized in the form of surface-mountable semiconductor components (SMT components, surface mounting technology), generally have a premolded carrier with a leadframe surrounded by a plastic housing. The housing includes a cavity within which one or more LED chips are disposed on the lead frame. Such components have a low overall height. For example, there is usually a distance of at most 1 mm between the leadframe and a front of the housing. In this design, the Schutzverguss on the circuit board of a display module can therefore not be realized in the desired thickness. As a result, SMT products are only used in special cases.

The object of the present invention is to provide an improved surface-mountable semiconductor device, an associated manufacturing method and a display device.

This object is solved by the features of the independent claims. Further advantageous embodiments of the invention are specified in the dependent claims.

According to one aspect of the invention, a method for producing surface mount semiconductor devices is proposed. The method includes providing a metallic conductor pattern. The conductor structure has front-side conductor sections arranged in a first plane, rear-side conductor sections arranged offset in a second plane to the first plane, connecting elements which connect between the front-side and rear-side conductor sections, and connecting elements connecting the rear-side conductor sections. Further provided is a forming of the conductor structure with a molding compound, so that a carrier is provided with a front side and a rear side. In this case, the front-side conductor sections on the front side and the rear-side conductor sections on the rear side of the carrier are exposed. The method further comprises arranging semiconductor chips on the front side of the carrier and performing a singulation process. In this process, the carrier is severed in the region of the connecting elements and the rear conductor sections, and isolated surface-mountable semiconductor components are formed.

The metallic conductor structure used in the method has front and rear conductor sections, which are arranged in planes offset parallel to one another and connected via intermediate sections. In this case, the intermediate sections may each be connected to a front and a rear conductor section. The rear conductor sections are also connected via connecting elements. In this way, the conductor structure can be mechanically held together before forming with the molding compound. In this state, all front and back conductor portions of the conductor pattern may be electrically short-circuited.

The carrier is formed by forming the conductor structure with the molding compound. The carrier, which can be formed flat, has a front side and an opposite rear side. On the front of the carrier semiconductor chips are mounted. As part of the chip assembly, the semiconductor chips can be suitably electrically connected to front conductor sections.

By separating the carrier equipped with the semiconductor chip, separate surface-mountable semiconductor components are produced (SMT components). Here, the carrier is severed in the region of the rear conductor sections and in the region of the connecting elements. In this process, the fasteners, which can be designed web-shaped, removed, and the short-circuit connections can be interrupted.

The individual semiconductor components may each have a part of the carrier and at least one semiconductor chip arranged on the front side of the carrier. On the rear side, the semiconductor components may have a plurality of severed rear conductor sections. These conductor sections can be connected via intermediate sections with front conductor sections. With the aid of the rear conductor sections, which can serve as connections, the semiconductor components can be mounted as a surface mount on counter connections of a carrier device, such as a printed circuit board. In this way, it is possible to supply electrical energy to a semiconductor component and thus to the at least one associated and front-side placed semiconductor chip via the rear conductor sections.

In the following, further possible details and embodiments are described in more detail, which may be considered for the method and for the semiconductor components produced according to the method.

It is possible to form the carrier with a large thickness, and thus with a large distance between the front side and the rear side serving as the mounting side in the semiconductor devices. In a corresponding manner, the semiconductor components can be manufactured with a large thickness or height. In this case, the at least one semiconductor chip arranged on the front side can be located at a large distance from the mounting side.

This may prove to be advantageous if radiation-emitting semiconductor components are produced with the aid of the method. In such an embodiment, radiation-emitting semiconductor chips are used, which are arranged on the front side of the carrier. The radiation-emitting semiconductor chips may be, for example, light-emitting diode chips (LED chips).

The radiation-emitting semiconductor components produced according to the method can be used, for example, in the construction of a display device, for example a module for a video wall. In this case, a plurality of semiconductor components can be mounted on a printed circuit board, and can be arranged on the circuit board in areas next to and between the semiconductor devices, a protective potting material. The achievable by the method large height of the semiconductor devices makes it possible to form the potting material with a large thickness. As a result, the rear conductor sections of the semiconductor components can be reliably sealed and consequently protected from external environmental influences. Furthermore, due to the front-side arrangement of the radiation-emitting semiconductor chips on the semiconductor components, the display device can be distinguished by an efficient lighting operation.

The molding compound with which the conductor structure is formed may be an insulating plastic material. With regard to the production of radiation-emitting semiconductor components, it may be considered to use a non-transparent, for example black plastic material as the molding compound. As a result, a lighting operation with high contrast is possible.

In a further embodiment, the intermediate sections of the conductor structure extend perpendicular to the first and second planes, and thus perpendicular to the front and back of the carrier. In this embodiment, the provided conductor structure in cross-section may have a repeating U-shaped profile. In this way, semiconductor devices can be manufactured with small lateral dimensions.

In a further embodiment, the carrier is provided with a thickness of at least 2mm. Similarly, semiconductor devices can be made with a height of at least 2mm. With this configuration, the use of the semiconductor devices can be promoted in a video wall to form a reliable Schutzverguss.

The ladder structure can be provided in different ways. For example, it is possible to structure a metal layer or metal foil so that an initial structure still extending in a common plane is present, and then to bend or fold this structure in order to produce the desired shape with the conductor sections arranged in different planes , The patterning can be done, for example, by etching or by a mechanical process such as stamping.

Alternatively, it is possible to directly produce the conductor pattern with the conductor portions arranged in different planes by etching a metal layer. Furthermore, the conductor structure can also be provided by mechanical cutting of a metal layer.

In addition, it is possible to provide the conductor structure with a metallic coating. This can be done for example by electroplating. Coating may be before or after the forming of the conductor structure are carried out with the molding compound.

The conductor sections and intermediate sections of the conductor structure can be combined in larger units or elements. In this sense, the conductor structure provided has conductor elements in a further embodiment, wherein each conductor element has two front conductor sections, a rear conductor section and two intermediate sections connecting the rear conductor section to the front conductor sections. In the singulation process, the conductor elements are severed in the region of the rear conductor sections. In this way, a conductor element can be distributed in each case to two semiconductor components. A severed conductor element of a semiconductor device present after the isolation may have a front-side conductor section and a severed rear-side conductor section connected to the front-side conductor section via an intermediate section.

The conductor elements can, viewed from above, have a strip shape. In cross section, the conductor elements may have a stepped course or a U-shaped profile. Furthermore, the provided conductor structure may have a plurality of parallel rows of strip-shaped conductor elements arranged side by side in the longitudinal direction. In the individual rows, the front-side conductor sections of adjacent conductor elements can be arranged next to one another or opposite one another.

In a further embodiment, the singulation process is carried out in such a way that isolated semiconductor components are formed which have at least two severed conductor elements or at least one pair of two severed conductor elements. In this case, the front-side conductor sections of such a pair of severed conductor elements can be arranged opposite one another, and the relevant conductor elements can serve as a cathode and anode for a semiconductor chip in the case of a corresponding electrical contacting.

With the aid of the method, single-chip components can be produced which have only one semiconductor chip or only one radiation-emitting semiconductor chip. Corresponding to this, the semiconductor components can be manufactured with only one cathode and anode serving pair of two severed conductor elements, with which the semiconductor chip is electrically connected.

With the aid of the method, it is also possible to produce multichip components which have a plurality of semiconductor chips or a plurality of radiation-emitting semiconductor chips. The multi-chip components can furthermore be produced in such a way that the plurality of semiconductor chips can be driven separately.

For this purpose, the semiconductor devices may be fabricated with a plurality of separate pairs of two severed conductor elements, wherein the number of the conductor element pairs may coincide with the number of semiconductor chips. If the semiconductor chips are electrically connected to the individual and serving as the cathode and anode conductor element pairs, it is possible to supply the semiconductor chips independently of each other with electrical energy and thereby to control each other separately.

Furthermore, for multichip components with separately controllable semiconductor chips, a design can be considered in which, instead of separate cathodes and anodes, a common cathode and separate anodes or a common anode and separate cathodes are present. This can be realized with suitably designed conductor elements of the conductor structure. For example, such conductor elements may have a larger number of conductor portions compared with the above-described configuration of a conductor member having two front-side conductor portions, a back-side conductor portion, and two intermediate portions. Furthermore, the conductor elements can be subdivided by separation into separate conductor elements assigned to individual semiconductor chips or electrically connected to individual semiconductor chips, as well as into conductor elements which are jointly assigned to a plurality of semiconductor chips and which are electrically connected to a plurality of semiconductor chips. In this case, for example, a plurality of semiconductor chips may be arranged on a front-side conductor section of such a conductor element.

With regard to multichip components, it is provided according to a further embodiment that semiconductor chips for generating a first light radiation, semiconductor chips for generating a second light radiation, and semiconductor chips for generating a third light radiation are arranged on the carrier. In the singulation process, separate semiconductor components are formed, which have a semiconductor chip for generating the first light radiation, a semiconductor chip for generating the second light radiation, and a semiconductor chip for generating the third light radiation. As described above, the semiconductor components can be manufactured such that the different semiconductor chips are separate can be driven and thereby independently operated to deliver their respective light radiation. In this way, the semiconductor devices can be used as pixels of a display device whose color is individually adjustable.

With regard to the aforementioned embodiment, the first, second and third light radiation may, for example, be red, green and blue light radiation. As a result, the semiconductor devices manufactured in this way can be used as RGB pixels.

As indicated above, in the context of arranging the semiconductor chips on the carrier, an electrical connection of the semiconductor chips to front-side conductor sections of the conductor structure can also take place. In this connection, the embodiments explained below can be used.

In a further embodiment, the semiconductor chips are each arranged on a front-side conductor section and are electrically connected via a contact structure to an adjacent or opposite front-side conductor section. In this embodiment, semiconductor chips having a front-side contact and a back-side contact can be used. Via the rear-side contact and an electrically conductive connection means, for example a solder or an electrically conductive adhesive, such a semiconductor chip can be electrically and mechanically connected to a front-side conductor section. The front-side contact of the semiconductor chip can be electrically connected to an adjacent front-side conductor section via the contact structure.

The contact structure used may be, for example, a bonding wire. Alternatively, there are other connection options, as will be explained in more detail below.

In addition, a layer of insulating plastic material adjacent to the semiconductor chips can be formed on the front side of the carrier, with which the front conductor sections of the conductor structure can be covered. It can thereby be achieved that only the rear conductor sections used for surface mounting are exposed and accessible in the case of the isolated semiconductor components. The intermediate portions may be embedded in the molding compound, and the front conductor portions may be covered by the front-applied layer. With regard to the front-side layer, the following embodiments may be used.

In a further embodiment, a sealing layer covering the semiconductor chips is formed on the front side of the carrier. With the aid of the sealing layer, the semiconductor chips can be completely encapsulated. With regard to the production of radiation-emitting semiconductor components, the sealing layer can be formed from a transparent or semitransparent plastic material. The formation of the sealant layer may be performed prior to the singulation process.

In a further embodiment, an embedding layer is formed on the front side of the carrier, which laterally adjoins the semiconductor chips or on their side flanks, so that front sides of the semiconductor chips are exposed. Subsequently, contact structures may be formed to connect the semiconductor chips to front conductor sections. Also in this embodiment, semiconductor chips having a front-side contact and a back-side contact may be used. Before forming the embedding layer, the semiconductor chips can be mounted with their rear side contacts in the manner described above on front side conductor sections. By manufacturing the contact structures after forming the embedding layer, the front-side contacts of the semiconductor chips can be electrically connected to adjacent front-side conductor portions. The embedding layer may be formed of a non-transparent plastic material. The formation of the embedding layer and the formation of the contact structures can be carried out before the singulation process.

The aforementioned embodiment proves to be favorable with respect to the production of radiation-emitting semiconductor components. In this embodiment, the front sides of the semiconductor chips, via which the semiconductor chips can emit a light radiation, remain uncovered. In this way, efficient radiation emission without optical errors and scattering effects is possible, and the semiconductor devices can excel in high brightness and high contrast. A high contrast can be favored if the embedding layer is formed with a black color or from a black plastic material.

In a further embodiment, after the formation of the contact structures and before the singulation, a protective layer is formed on the semiconductor chips or on their exposed front sides, on the contact structures and on the embedding layer. In this way, the semiconductor chips and the contact structures can be protected from external influences. The protective layer can be formed of a transparent plastic material.

In a further embodiment, the aforementioned contact structures are formed as follows. For each contact structure, a recess is formed in the embedding layer for exposing a part of a front side conductor portion, and an electrically conductive contact layer for connecting a semiconductor chip or a front side contact of a semiconductor chip to the exposed part of the front side conductor portion is formed. Contact structures produced in this way can be so-called planar contacts or PI contacts (planar interconnect), also referred to as PICOS contacts.

The procedure described above offers the possibility of making the contact structures as small as possible. Also, the semiconductor chips used may have small front side contacts. If radiation-emitting semiconductor components with a black embedding layer are produced, and from which a display device is constructed, it can be achieved that the display device appears almost black when switched off. In this case, only the semiconductor chips and the contact structures can have a low reflective component.

With regard to the contact structures embodied in the form of contact layers, it may also be considered to form an insulating layer on each semiconductor chip before the contact layers are formed, which covers the relevant semiconductor chip on the front edge and in the region of the front side contact and a part of the embedding layer. In this way it can be avoided that the side edge and the front side contact of the semiconductor chip are short-circuited via the subsequently produced contact layer. The insulating layer may be formed of a transparent plastic material.

According to another aspect of the invention, a surface mount semiconductor device is proposed. The semiconductor component has a carrier with a front side and a rear side and at least one semiconductor chip arranged on the front side of the carrier. The carrier has a metallic conductor structure and a molding compound adjacent to the conductor structure. The conductor structure has front-side conductor sections arranged in a first plane, rear-side conductor sections arranged offset in a second plane to the first plane, and intermediate sections extending between the front-side and rear-side conductor sections. The front conductor sections are exposed at the front of the carrier. The rear conductor sections are exposed at the back of the carrier.

The semiconductor component can be produced according to the method explained above or according to one or more of the embodiments of the method described above. For the semiconductor device, the same configurations may be conceivable and the same advantages may be considered as explained above. By way of example, the semiconductor component can be realized in the form of a radiation-emitting semiconductor component in that the at least one semiconductor chip is a radiation-emitting semiconductor chip. Also, the semiconductor device may have a large height of, for example, at least 2mm. As a result, the semiconductor device is suitable for use in a display device.

Furthermore, for example, one or more of the following configurations may be present. The molding compound may comprise a black plastic material. The front of the carrier may be formed by the front conductor portions and the molding compound. The back of the carrier may be formed by the back conductor portions and the molding compound. The intermediate sections of the conductor structure may be perpendicular to the first and second planes and thus perpendicular to the front and back of the carrier. Furthermore, the intermediate sections may each be connected to a front and a rear conductor section. The at least one semiconductor chip may be connected to a front conductor section via a bonding wire. The front side of the carrier as well as the at least one semiconductor chip may be covered with a transparent or semitransparent sealing layer.

It is also possible for an embedding layer to be arranged on the front side of the carrier which laterally adjoins the at least one semiconductor chip so that a front side of the at least one semiconductor chip is not covered by the embedding layer. The relevant semiconductor chip can also be connected via a contact structure to a front-side conductor section. In this case, the embedding layer may have a recess over which a part of the front-side conductor section is exposed. The contact structure may be realized in the form of a contact layer, via which the semiconductor chip is electrically connected to the exposed part of the front-side conductor section. The embedding layer may be formed of a non-transparent, for example, black plastic material. Optionally, the semiconductor device may comprise an additional protective layer of a transparent plastic material disposed on the at least one a semiconductor chip, the contact structure and the embedding layer may be arranged.

In addition, the semiconductor component can be implemented as a multi-chip component, and have, for example, three radiation-emitting semiconductor chips. The three semiconductor chips can be designed to generate different light radiations, for example red, green and blue light radiation.

According to another aspect of the invention, a display device is proposed. The display device has a printed circuit board, a plurality of semiconductor components arranged on the printed circuit board and a potting material. The potting material is disposed on the circuit board in areas adjacent and between the semiconductor devices. The semiconductor devices have the structure described above or a structure according to one or more of the embodiments described above. The semiconductor components can also be produced according to the method explained above or according to one or more of the embodiments of the method described above. With respect to use in the display device, the semiconductor devices are radiation-emitting semiconductor devices. Therefore, the at least one semiconductor chip of the semiconductor components is a radiation-emitting semiconductor chip.

As stated above, the semiconductor devices may have a large overall height of, for example, at least 2mm. Similarly, the potting material can be formed with a large thickness on the circuit board. In this way, the back conductor sections of the semiconductor devices can be reliably sealed and thus safely protected from external environmental influences. The front-side arrangement of the radiation-emitting semiconductor chips on the semiconductor components also enables efficient lighting operation of the display device. Compared to the use of conventional semiconductor devices, an increase in the luminous efficacy of, for example, up to 50% is possible.

For the display device, one or more of the following configurations may be present. The display device may be a module for a video wall. Also, the display device may be suitable for outdoor use. The semiconductor components may be electrically and mechanically connected to terminals of the circuit board via the rear conductor sections and an electrically conductive connection means. The potting material may be a plastic or silicone material. Furthermore, the potting material may not be transparent and, for example, have a black color.

The advantageous embodiments and further developments of the invention explained above and / or reproduced in the subclaims can be used individually or else in any desired combination with one another-except, for example, in cases of clear dependencies or incompatible alternatives.

The above-described characteristics, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following description of exemplary embodiments, which are explained in more detail in connection with the schematic drawings. Show it:

1 to 3 Supervision diagrams and a side view of a provided conductor structure for producing multi-chip components;

4 . 5 a top view and a side view of a formed by forming the conductor structure with a molding material carrier;

6 . 7 a top view and a side view of the carrier after a chip mounting and forming a sealing layer;

8th . 9 a top view and a side view of an isolated multi-chip device;

10 a side view of the carrier according to an alternative chip mounting using an embedding layer;

11 a side view of another isolated multichip device;

12 an enlarged side view of the carrier after the alternative chip assembly with the embedding layer and forming further layers;

13 a top view of a carrier with an alternative conductor structure for producing multi-chip components;

14 a top view of a carrier with an alternative conductor structure for producing single-chip components; and

15 a side view of a display device. On the basis of the following schematic figures possible embodiments of a method for the manufacture of Surface-mountable radiation-emitting semiconductor devices described. The semiconductor devices may be used in outdoor display devices. In the method, known processes can be carried out from semiconductor technology and from the production of electronic and optoelectronic components, and conventional materials can be used in these areas, so that this is only partially discussed. In the same way, in addition to processes shown and described further processes can be carried out and the components can be manufactured in addition to components shown and described with other components and structures. It is further noted that the figures are merely schematic in nature and are not to scale. In this sense, components and structures shown in the figures may be exaggerated or oversized for clarity.

In the figures, a three-dimensional orthogonal coordinate system is additionally indicated on the basis of x, y, z and oriented at right angles axes. This will be used in the following partly for the description of geometric conditions.

The 1 to 9 show on the basis of supervisory representations and side sectional views of a possible method for producing surface mount semiconductor devices 101 , These are radiation-emitting multichip components 101 which three separately controllable radiation-emitting semiconductor chips 140 exhibit. The three semiconductor chips 140 can be designed to generate different light radiation, ie a red, a green and a blue light radiation. This allows the semiconductor devices 101 be used as RGB pixels of a display device. This application can be achieved by a large height of the semiconductor components which can be achieved with the aid of the method 101 be favored.

At the beginning of the process becomes a metallic conductor structure 110 provided, which partially in the 1 . 2 in a supervision and in 3 shown in cross section. The ladder structure 110 has a variety of conductor sections 121 . 122 on which in a first level 171 are arranged (see. 3 ). According to the coordinate system, it is an xy plane 171 , In a later produced carrier 130 are the conductor sections 121 . 122 at the front 181 (see. 5 ). Therefore, the conductor sections become 121 . 122 in the following also as front conductor sections 121 . 122 designated. The conductor sections 121 have a greater length than the conductor sections 122 on.

The ladder structure 110 also has a plurality of conductor sections 125 on which one in the first level 171 parallel offset second xy plane 172 are arranged (see. 3 ). As the conductor sections 125 on a backside 182 of the later produced carrier 130 are located (cf. 5 ), these are also referred to as rear conductor sections 125 called. With respect to the above-mentioned large height of the semiconductor devices 101 can the ladder structure 110 with a height and thus a distance of the levels 171 . 172 of, for example, at least 2mm.

The ladder structure 110 Further, between the front and back conductor sections 121 . 122 . 125 extending intermediate sections 127 on (cf. 3 ). The intermediate sections 127 , each with a front conductor section 121 or 122 and a back conductor section 125 are connected, perpendicular to the two planes 171 . 172 and thus in z-direction.

As based on the 1 to 3 becomes clear, are several of the sections 121 . 122 . 125 . 127 to larger units 111 summarized, which in the following as ladder elements 111 be designated. The ladder elements 111 , which have a strip shape when viewed from above, each comprise two front-side conductor sections 121 . 122 , a rear conductor portion disposed therebetween 125 and two intermediate sections 127 (see. 3 ). About the two intermediate sections 127 is the back ladder section 125 each with one of the two front conductor sections 121 . 122 connected.

As in the 1 . 2 is further shown, are the strip-shaped conductor elements 111 arranged in several parallel and running in the x-direction rows. In each row are the ladder elements 111 positioned such that in each case two front-side conductor sections 121 . 122 from adjacent conductor elements 111 at a distance opposite. Here are the relevant conductor sections 121 . 122 separated by an interruption. In cross section, the strip-shaped conductor elements 111 , as in 3 shown is a U-shaped profile. The conductor structure has the same way 110 in cross-section a repetitive U-profile.

The ladder structure 110 moreover, as in the 1 . 2 is shown, web-shaped connecting elements 115 . 116 on which the rear conductor sections 125 connected to each other. These are referred to below as connecting bridges 115 . 116 designated. With the help of connecting bridges 115 . 116 becomes the ladder structure 110 held together mechanically. In this condition are all components of the ladder structure 110 electrically shorted.

The connecting bridges 116 , which directly with the back conductor sections 125 are connected and between adjacent conductor sections 125 extend, extending in the y-direction in the second plane 172 , The connecting bridges 116 are in turn partly with the connecting bridges 115 connected. The connecting bridges 115 own, comparable to the ladder elements 111 , a U-shaped cross-sectional profile. Here are the connecting webs 115 both in the first level 171 as well as in the second level 172 in the x-direction extending sections, as in the 1 . 2 is indicated. Such sections are not shown and perpendicular thereto or in the z-direction extending portions of the connecting webs 115 connected.

Based on 1 it becomes clear that in the ladder structure 110 three rows of ladder elements each 111 are arranged side by side, and in each case adjacent to or between such rows of conductor elements 111 the connecting webs 115 available. In 1 is also on the basis of dashed lines a rectangular or square component area 190 indicated, on the basis of which the geometric extension of one of the semiconductor components to be produced 101 is illustrated. The component area 190 is of connecting bridges 115 . 116 enclosed.

The ladder structure 110 can be made as follows. In this case, a metal foil is provided and subsequently subjected to structuring, as a result of which an initial structure which initially still extends in a common plane is present (not illustrated). The patterning of the metal foil may be carried out, for example, by etching or by a mechanical process such as stamping. The initial structure is then folded to fit into the 1 to 3 shown characteristic of the ladder structure 110 in the form of a metal net with the repeating U-profile. The provided metal foil has a thickness which allows both a simple folding and the metal foil and thus the conductor structure 110 gives sufficient rigidity. This can be achieved, for example, with a thickness of the metal foil in the range of 50 μm to 200 μm.

After providing the conductor structure 110 becomes the ladder structure 110 , as in 4 in the supervision and in 5 shown in cross-section, with a molding compound 135 reshapes. In this way, a flat plate-shaped carrier 130 with a flat front 181 and a flat back opposite thereto 182 generated. The front 181 of the carrier 130 is through the front conductor sections 121 . 122 and the ones with the ladder sections 121 . 122 at this point flush final molding compound 135 educated. As a result, the front conductor sections are 121 . 122 on the front side 181 optional. In the same way, the back 182 of the carrier 130 through the back conductor sections 125 and the ones with the ladder sections 125 at this point flush final molding compound 135 educated. As a result, the back conductor sections lie 125 at the back 182 free. According to the embodiment of the conductor structure explained above 110 can the carrier 130 have a thickness of at least 2mm.

The reshaping of the ladder structure 110 can be performed by means of a molding process using a molding tool (not shown). Here, the conductor structure 110 with the molding compound 135 to be overmoulded. In the molding compound 135 it may be a plastic material, for example a thermoset or thermoplastic. In the luminous operation of the semiconductor devices produced by the method 101 To achieve a high contrast, the molding compound used 135 have a black color.

Subsequently, further processes are carried out, as in 6 in the supervision and in 7 shown in cross section. First, be on the front 181 the provided carrier plate 130 radiation-emitting semiconductor chips 140 assembled. The semiconductor chips 140 can be, for example, LED chips. In chip mounting, the semiconductor chips become 140 on the front conductor sections 121 the conductor elements 111 arranged as well as electrically with these and with the opposite front-side conductor sections 122 from adjacent conductor elements 111 connected.

The semiconductor chips 140 have a front-side contact and a back-side contact (not shown). With the backside contacts are the semiconductor chips 140 on the ladder sections 121 arranged. At these locations, an electrical and mechanical connection is made by means of a bonding means such as a solder or an electrically conductive adhesive (not shown). The front-side contacts of the semiconductor chips 140 Be about bonding wires 150 to each adjacent to the conductor sections 121 present conductor sections 122 connected.

As indicated above, semiconductor devices serving as RGB pixels can be used with the method 101 getting produced. For this embodiment, on the carrier 130 different light-emitting semiconductor chips 140 arranged, which are designed to generate a red, a green and a blue light radiation. Here, in the individual component areas (cf., the area 190 in 1 ) each have a red emitting, a green emitting and a blue emitting semiconductor chip 140 arranged. Seen from above, these three semiconductor chips 140 arranged side by side in y-direction (cf. 6 ).

The following is a sealant layer 160 on the front side 181 of the carrier 130 formed, with which the semiconductor chips 140 and the bonding wires 150 completely encapsulated and the front conductor sections 121 . 122 be covered (see. 7 ). The sealing layer 160 may be formed of a transparent plastic material. In lighting operation of the semiconductor devices 101 To achieve a higher contrast, the sealing layer 160 also be made of a semi-transparent blackened plastic material. The formation of the sealing layer 160 can be carried out, for example, by means of a molding or molding process. It is also possible casting of material of the sealing layer 160 on the front side 181 of the carrier 130 ,

Subsequently, a singulation process is carried out in which the composite of semiconductor chips 140 equipped and with the sealing layer 160 provided carrier 130 is severed, so that separate light emitting semiconductor devices 101 be formed. The cutting is done along in the 6 . 7 indicated separation marks 195 in the area of the rear conductor sections 125 and connecting bridges 115 . 116 , In this process, the sealing layer 160 and the molding material 135 severed. Also, the connecting bridges 115 . 116 removed, causing the short-circuit connections to break. Furthermore, the backside conductor sections become 125 and the associated ladder elements 111 severed, and thus each on two semiconductor devices 101 distributed.

A radiation-emitting semiconductor device produced in this way 101 is in 8th in the supervision and in 9 shown in cross section. The realized as a multi-chip device semiconductor device 101 has a cuboid shape, and has a part of the carrier 130 , a part of the sealing layer 160 , three semiconductor chips 140 and three associated pairs of two severed conductor elements 111 on. The conductor element pairs serve as the cathode and anode of the semiconductor chips 140 , and allow the semiconductor chips 140 energized independently of each other and thus separately to control the light emission. The three semiconductor chips 140 can be designed to generate different light radiations, ie a red, a green and a blue light radiation, so that the semiconductor device 101 can be used as an RGB pixel of a display device. From the ladder elements 111 are only the back conductor sections 125 exposed and thus accessible. The conductor sections 125 can as rear terminals or solder pads of the semiconductor device 101 be used. The semiconductor device 101 may have a relatively large height of, for example, at least 2mm.

The following are possible variants and modifications of the basis of the 1 to 9 described process flow described. Corresponding method steps and features as well as identical and identically acting components will not be described again in detail below. For details, reference is made to the above description instead. Furthermore, aspects and details mentioned with respect to one method variant may also be applied with respect to another method variant, and features of two or more embodiments may be combined with each other.

In a possible modification of the method, after providing the carrier 130 an alternative chip assembly performed as in 10 shown in cross section. In this embodiment, instead of the sealing layer 160 an embedding layer 165 for use, and are used instead of bonding wires 150 other contact structures 155 educated.

To realize the in 10 shown composite is the carrier 130 manufactured in the manner described above, and the radiation-emitting semiconductor chips 140 on the front side 181 of the carrier 130 arranged. As described above, red, green and blue emitting semiconductor chips 140 come into use. In this case, in each component region, a red emitting, a green emitting and a blue emitting semiconductor chip 140 to be placed. The semiconductor chips 140 be with the rear side contacts and using an electrically conductive connection means on the front conductor sections 121 arranged.

The following is an embedding layer 165 on the carrier 130 formed, which laterally to the semiconductor chips 140 or adjacent to the side edges and the front 181 of the carrier 130 and thus the ladder sections 121 . 122 side of the semiconductor chips 140 covered. The embedding layer 165 extends to the front sides of the semiconductor chips 140 so that the fronts of the Semiconductor chips 140 over which the semiconductor chips 140 can emit light radiation, are exposed.

The embedding layer 165 may be formed of a plastic material. In order to achieve a higher contrast in lighting operation, a black plastic material can be used. The formation of the embedding layer 165 can be carried out, for example, by means of a molding or molding process. Also possible is a potting process.

Subsequently, contact structures 155 formed over which the front side contacts of the semiconductor chips 140 electrically with each adjacent to the conductor sections 121 present conductor sections 122 are connected. This can be done as follows. For every contact structure 155 becomes a recess 166 in the embedding layer 165 formed over which a part of a conductor section 122 is released, and becomes an electrically conductive or metallic contact layer 157 formed, via which the front side contact of a semiconductor chip 140 with the exposed part of an adjacent conductor section 122 connected is. The formation of the recesses 166 can be done with the help of a laser. The formation of the contact layers 157 can be done using a photolithographic technique. The contact layers 157 , each on a semiconductor chip 140 in the area of its front side contact, on the embedding layer 165 and in a recess 166 on a ladder section 122 can be arranged, can be formed linear and with a small width.

After forming the contact structures 155 , which, viewed from above, is comparable to a given situation 6 can be present, a singulation process is performed. Here, with the light-emitting semiconductor chips 140 and the embedding layer 165 provided carriers 130 along separation marks 195 severed, so that separate radiation-emitting semiconductor devices 102 be formed. In this process, the embedding layer 165 and the molding material 135 severed, become the connecting webs 115 . 116 removed, and become the back conductor sections 125 and the associated ladder elements 111 severed and each on two semiconductor devices 102 distributed.

A light-emitting semiconductor device manufactured in this way 102 is in 11 shown in cross section. The semiconductor device 102 indicates apart from the embedding layer 165 and the contact structures 155 one to a semiconductor device 101 comparable structure with three separately controllable semiconductor chips 140 on. Also the semiconductor device 102 can be used as the RGB pixel of a display device.

In the context of the production of semiconductor devices 102 can be next to the embedding layer 165 and the contact layers 157 further optional layers are formed. To illustrate shows 12 an enlarged side view of the carrier 130 in the area of a semiconductor chip 140 , Shown here is also the front side contact 141 of the semiconductor chip 140 , It is possible, for example, before forming the contact layers 157 in the area of each semiconductor chip 140 in addition an insulating layer 156 train. As in 12 on the basis of the one semiconductor chip 140 can be shown, the insulating layer 156 the relevant semiconductor chip 140 at the edge in the area of the front side contact 141 cover. The insulating layer 156 , which may be formed of a transparent plastic material, may have a recess, so that a part of the front side contact 141 is released. Also the embedding layer 165 can next to the semiconductor chip 140 partly with the insulating layer 156 be covered. In this embodiment, with the aid of the insulating layer 156 avoid the side flank and the front side contact 141 of the semiconductor chip 140 via the subsequently produced contact layer 157 be shorted.

By forming the contact layers 156 become the front side contacts 141 the semiconductor chips 140 electrically with the over the recesses 166 the embedding layer 165 partially detached conductor sections 122 connected. As in 12 on the basis of the one semiconductor chip 140 is shown, the contact layer 157 in the region of the relevant semiconductor chip 140 on the insulating layer 156 be arranged and the front side contact 141 of the semiconductor chip 140 over the recess of the insulating layer 156 to contact. Furthermore, the contact layer 157 starting from the front side contact 141 in the associated recess 166 the embedding layer 165 not just up to the ladder section 122 extend, but also again from the recess 166 out to a front of the embedding layer 165 run.

12 further illustrates the possibility of an optional protective layer prior to singulation 169 from a transparent plastic material, with which the semiconductor chips 140 or their front sides, the contact layers 157 and the embedding layer 165 to be covered. In this way, the semiconductor chips 140 and the contact layers 157 be protected from external influences. Previously, as well as in 12 is implied that with the contact layers 157 provided recesses 166 the embedding layer 165 each with an optional filling layer 159 be provided in order to provide a flat surface in this area.

The above-explained multichip components 101 . 102 show pairs of separate severed ladder elements 111 on which as separate cathodes and anodes of the semiconductor chips 140 serve. However, it is also possible to use multichip components with semiconductor chips which can be supplied with power separately 140 be realized, which has a common cathode and separate anodes or a common anode and separate cathodes for the semiconductor chips 140 exhibit. This can be achieved by a ladder structure 110 with coordinated forms of ladder elements 111 realize. Such conductor elements 111 may differ from those described above in the 1 . 2 . 4 . 6 having shown embodiment conductor sections with larger dimensions and / or a greater number of conductor sections. In this way, such conductor elements 111 by singulating both in separate and only with individual semiconductor chips 140 electrically connected conductor elements as well as into conductor elements are divided, which several or three semiconductor chips 140 are assigned together and which with the plurality of semiconductor chips 140 are electrically connected.

By way of example, FIG 13 a possible embodiment of a radiation-emitting semiconductor chip 140 equipped carrier 130 with a ladder structure formed in this manner 110 shown in the supervision. The carrier 130 can as described above by reshaping the conductor structure 110 with the molding compound 135 be formed. The ladder structure 110 includes ladder elements 111 , which each have a flat front conductor section 123 with larger lateral dimensions, three rear conductor sections 125 and three front conductor sections 122 exhibit. The ladder section 123 can as a coherent embodiment of three conductor sections 121 (see. 2 ).

The ladder elements 111 the ladder structure 110 from 12 also not shown, perpendicular to the front and back 181 . 182 of the carrier 130 or in the z-direction extending intermediate sections 127 on which the rear conductor sections 125 with the front conductor sections 122 . 123 are connected. Therefore, have the conductor elements 111 also in this embodiment, a U-shaped cross-sectional profile, and may be the carrier 130 in cross-section one 5 have appropriate structure.

The ladder structure 110 from 13 also has connecting bars 115 . 116 on which the rear conductor sections 125 are connected. The ladder elements 111 are arranged in a plurality of rows extending in the x-direction, of which in 13 only part of a series is shown. In each case next to or between the rows of conductor elements 111 are the connecting bridges 115 available.

The chip assembly is carried out according to the embodiment of 13 such that on the front-side conductor sections 123 the conductor elements 111 in each case three radiation-emitting semiconductor chips 140 to be assembled. Here, the semiconductor chips 140 with the backside contacts and using an electrically conductive connection means on the conductor sections 123 arranged. In each case, a red emitting, a green emitting and a blue emitting semiconductor chip 140 on a ladder section 123 to be placed. Furthermore, the front side contacts of the semiconductor chips become 140 via contact structures, in this case bonding wires 150 , to the respective opposite conductor sections 122 adjacent conductor elements 111 connected.

After forming a sealant layer 160 , whereby in cross section a given situation 7 can be present, a singulation process is performed. This is done by cutting the with the semiconductor chip 140 and the sealing layer 160 provided vehicle 130 along separation marks 195 in the area of the connecting webs 115 . 116 and the back conductor sections 125 , and become separate radiation-emitting semiconductor devices 103 educated.

The semiconductor devices 103 differ from the semiconductor devices 101 through the conductor elements 111 ,

A semiconductor device 103 has a severed conductor element 111 with a flat front and the three semiconductor chips 140 carrying ladder section 123 and three back conductor sections 125 , as well as three severed conductor elements 111 each with a front conductor section 122 and a back conductor section 125 on. In this embodiment, the conductor element 111 with the ladder section 123 as a common cathode, and can be the conductor elements 111 with the conductor sections 122 as separate anodes of the semiconductor chips 140 serve.

Deviating from 13 may also have other configurations with respect to the contact structure 110 To consider. An example is an embodiment with conductor elements 111 , which each have a plurality of or three front-side conductor sections for arranging each of a semiconductor chip 140 and a flat front conductor section with larger lateral dimensions for connecting several or three bonding wires 150 exhibit. Also conceivable are embodiments in which conductor elements 111 additionally or alternatively have larger area intermediate sections and / or larger area rear conductor sections.

With regard to the aforementioned modifications with alternative forms of the conductor structure 110 It is noted that these are not based on the use of bonding wires 150 and a sealing layer 160 are limited. Alternatively, the basis of the 10 . 11 . 12 explained embodiments with the embedding layer 165 , the contact structures 155 and optionally the other layers 156 . 159 . 169 be provided. This applies in a corresponding manner to the method variant explained below.

In a further modification of the method, instead of multi-chip components, individual-chip components are produced which only comprise a single light-emitting semiconductor chip 140 exhibit. By way of example, FIG 14 a possible embodiment of a semiconductor chip 140 equipped carrier 130 with a coordinated ladder structure 110 shown in the supervision. The carrier 130 can as described above by reshaping the conductor structure 110 with the molding compound 135 be formed.

As with the basis of the 1 to 9 explained procedure has the ladder structure 110 strip-shaped and in cross-section U-shaped conductor elements 111 with two front conductor sections 121 . 122 , a back ladder section 125 and two not shown and perpendicular to the front and back 181 . 182 of the carrier 130 or in the z-direction extending intermediate sections 127 on. In cross section, the carrier 130 one 5 have appropriate structure.

Also the ladder structure 110 from 14 has connecting webs 115 . 116 on which the rear conductor sections 125 are connected. The ladder elements 111 are arranged in a plurality of rows extending in the x-direction, of which in 14 only part of a series is shown. In each case next to or between the rows of conductor elements 111 are the connecting bridges 115 available.

The chip assembly is done according to 14 such that on the front-side conductor sections 121 the conductor elements 111 in each case a radiation-emitting semiconductor chip 140 is mounted. The semiconductor chips 140 be used with the back contacts and using an electrically conductive lanyard on the conductor sections 121 arranged. Further, the front side contacts of the semiconductor chips become 140 via contact structures, in this case bonding wires 150 , to the respective opposite conductor sections 122 adjacent conductor elements 111 connected.

After forming a sealant layer 160 , whereby in cross section a given situation 7 can be present, a singulation process is performed. This is done by cutting the with the semiconductor chip 140 and the sealing layer 160 provided vehicle 130 along separation marks 195 in the area of the connecting webs 115 . 116 and the back conductor sections 125 , and become separate radiation-emitting semiconductor devices 104 educated. A semiconductor device 104 has a single semiconductor chip 140 and two severed conductor elements 111 on, which as the cathode and anode for energizing the semiconductor chip 140 serve.

It is possible to construct a display device from a plurality of the semiconductor devices described above. By way of example, FIG 15 such a display device 200 partially shown in cross section. The display device 200 can be a module of a video wall.

The display device 200 has a circuit board 210 , several on the circuit board 210 arranged radiation-emitting semiconductor devices 201 and a potting material 205 on. In the semiconductor devices 201 may be semiconductor devices 101 . 102 . 103 or 104 act. The potting material 205 is on the circuit board 210 in areas next to and between the semiconductor devices 201 , The potting material 205 , which laterally to the semiconductor devices 201 adjacent, extends (approximately) to the front sides of the semiconductor devices 201 so that the front sides of the semiconductor devices 201 exposed. The potting material 205 may be a plastic or silicone material, and have a black color.

For the production of the display device 200 a surface mounting is performed in which the semiconductor devices 201 over the back conductor sections 125 and an electrically conductive connection means such as a solder electrically and mechanically to terminals of the circuit board 210 be connected (not shown). The following is the casting material 205 beside and between the semiconductor devices 210 on the circuit board 210 applied.

Due to the large height of the semiconductor devices 201 of, for example, at least 2mm, it is possible in a similar way, the potting material 205 with a thickness of 2mm or one form greater thickness. In this way, the back conductor sections 125 the semiconductor devices 201 be reliably sealed. As a result, the display device is suitable 200 for an application in the outdoor area. As the radiation-emitting semiconductor chips 140 in the semiconductor devices 201 are arranged on the front side or close to the front side (cf. 9 . 11 ), an efficient lighting operation is also possible.

This can be favored when the semiconductor devices 201 the basis of the semiconductor devices 102 explained design with the embedding layer 165 and the contact structures 155 have (see. 11 ). Because the front sides of the semiconductor chips 140 can be uncovered, an emission of light radiation without optical errors and scattering effects, and thus with a high efficiency, high brightness and high contrast is possible. The presence of high contrast may be due to an embedding layer formed with a black color 165 be favored.

In this context, it is also possible, the contact structures 155 the semiconductor devices 201 relatively small to realize. In a similar manner, semiconductor chips 140 come with relatively small front side contacts are used. In this way it can be achieved that the display device 200 when switched off appears almost completely black. Only the semiconductor chips 140 and the contact structures 155 can cause low reflection of ambient light.

The embodiments explained with reference to the figures represent preferred or exemplary embodiments of the invention. In addition to the described and illustrated embodiments, further embodiments are conceivable which may include further modifications and / or combinations of features.

For example, it is possible to have a ladder structure 110 , a carrier 130 and form semiconductor devices not with the above-stated thickness of at least 2 mm, but with a different or smaller thickness. This may be considered when the semiconductor devices are not intended for use in video walls in the outdoor area, but for other applications, for example, video walls in the indoor area.

For a ladder structure 110 an embodiment may be provided in which a reliable connection, for example in the form of a toothing with a molding compound 135 can be achieved. For this purpose, components of the conductor structure 110 like connecting bridges 115 . 116 , Ladder elements 111 and / or individual sections of the conductor elements 111 be formed with structures such as marginal incisions, holes and / or bruises. Furthermore, a ladder structure 110 be manufactured with additional webs or auxiliary webs. Such webs may or may not be components of the fabricated semiconductor devices.

In addition to the above procedure can be a ladder structure 110 be provided in a different way. It is possible, for example, a ladder structure 110 with in different levels 171 . 172 arranged conductor portions in a direct manner by etching to provide a metal layer. An alternative method is to cut a metal layer.

Another during the process in relation to a ladder structure 110 feasible step is a metallic coating of the conductor structure 110 by electroplating. Such a step may be before or even after the forming of the conductor structure 110 with a molding compound 135 be performed.

Instead of semiconductor chips 140 With a front and a back contact, other types of semiconductor chips can be used. These include semiconductor chips with only rear contacts. Such semiconductor chips may be arranged with the backside contacts on opposite front side conductor portions of adjacent conductor elements.

With respect to semiconductor chips, it is also possible to form a conversion layer for radiation conversion on the semiconductor chips or on at least part of the semiconductor chips.

Furthermore, it is possible to consider, in addition to or instead of radiation-emitting semiconductor chips, other types of semiconductor chips on a carrier 130 and, as a result, produce semiconductor devices with other types of semiconductor chips. This may include, for example, radiation-receiving semiconductor chips.

While the invention has been further illustrated and described in detail by way of preferred embodiments, the invention is not limited by the disclosed examples, and other variations can be derived therefrom by those skilled in the art without departing from the scope of the invention.

LIST OF REFERENCE NUMBERS

101, 102

 Semiconductor device

103, 104

 Semiconductor device

110

 conductor structure

111

 conductor element

115, 116

 connecting web

121, 122

 front conductor section

123

 front conductor section

125

 back ladder section

127

 intermediate section

130

 carrier

135

 molding compound

140

 Semiconductor chip

141

 Front contact

150

 bonding wire

155

 Contact structure

156

 insulating layer

157

 contact layer

159

 filling layer

160

 sealing layer

165

 buried layer

166

 recess

169

 protective layer

171, 172

 level

181

 front

182

 back

190

 component region

195

 separating track

200

 display device

201

 Semiconductor device

205

 grout

210

 circuit board

Claims (14)

Method for producing surface mount semiconductor devices ( 101 . 102 . 103 . 104 ), comprising: providing a metallic conductor structure ( 110 ), the conductor structure ( 110 ) in a first level ( 171 ) arranged front conductor sections ( 121 . 122 . 123 ), in a second level ( 172 ) moves to the first level ( 171 ) arranged rear conductor sections ( 125 ), between the front and rear conductor sections ( 121 . 122 . 123 . 125 ) extending intermediate sections ( 127 ) and the rear conductor sections ( 125 ) connecting connecting elements ( 115 . 116 ) having; Reshaping the ladder structure ( 110 ) with a molding compound ( 135 ), so that a carrier ( 130 ) with a front side ( 181 ) and a back ( 182 ), wherein the front conductor sections ( 121 . 122 . 123 ) on the front side ( 181 ) and the rear conductor sections ( 125 ) on the back ( 182 ) of the carrier ( 130 ) are exposed; Arranging semiconductor chips ( 140 ) on the front side ( 181 ) of the carrier ( 130 ); and performing a singulation process, wherein the carrier ( 130 ) in the region of the connecting elements ( 115 . 116 ) and the rear conductor sections ( 125 ) is cut and isolated surface mount semiconductor devices are formed. Method according to claim 1, wherein the semiconductor chips ( 140 ) are radiation-emitting semiconductor chips. Method according to one of the preceding claims, wherein the intermediate sections ( 127 ) perpendicular to the first and second levels ( 171 . 172 ). Method according to one of the preceding claims, wherein the carrier ( 130 ) has a thickness of at least 2mm. Method according to one of the preceding claims, wherein the conductor structure ( 130 ) Conductor elements ( 111 ), which two front conductor sections ( 121 . 122 . 123 ), a rear conductor section ( 125 ) and two the rear conductor section ( 125 ) with the front conductor sections ( 121 . 122 . 123 ) connecting intermediate sections ( 127 ), and wherein the conductor elements ( 111 ) in the singulation process in the region of the rear conductor sections ( 125 ) are severed. Method according to Claim 5, in which individual semiconductor components are formed, which comprise at least two severed conductor elements ( 111 ) exhibit. Method according to one of the preceding claims, wherein semiconductor chips ( 140 ) for generating a first light radiation, semiconductor chips ( 140 ) for generating a second light radiation and semiconductor chips ( 140 ) for generating a third light radiation on the carrier ( 130 ), and wherein isolated semiconductor devices are formed, which form a semiconductor chip ( 140 ) for generating the first light radiation, a semiconductor chip ( 140 ) for generating the second light radiation and a semiconductor chip ( 140 ) for generating the third light radiation. Method according to one of the preceding claims, wherein the semiconductor chips ( 140 ) each on a front conductor section ( 121 . 123 ) and via a contact structure ( 150 . 155 ) electrically to an adjacent front conductor portion ( 122 ) are connected. Method according to one of the preceding claims, wherein one of the semiconductor chips ( 140 ) covering sealing layer ( 160 ) on the Front side ( 181 ) of the carrier ( 130 ) is formed. Method according to one of claims 1 to 8, wherein an embedding layer ( 165 ) on the front side ( 181 ) of the carrier ( 130 ) formed laterally on the semiconductor chips ( 140 ) so that front sides of the semiconductor chips ( 140 ), and where contact structures ( 155 ) for connecting the semiconductor chips ( 140 ) to front conductor sections ( 122 ) be formed. The method of claim 10, wherein forming a contact structure ( 155 ) comprises the following steps: forming a recess ( 166 ) in the embedding layer ( 165 ) for exposing a part of a front-side conductor section ( 122 ); and forming a contact layer ( 157 ) for connecting a semiconductor chip ( 140 ) with the exposed part of the front conductor section ( 122 ). Surface mountable semiconductor device ( 101 . 102 . 103 . 104 ), comprising a carrier ( 130 ) with a front side ( 181 ) and a back ( 182 ) and at least one on the front ( 181 ) of the carrier ( 130 ) arranged semiconductor chip ( 140 ), the carrier ( 130 ) a metallic conductor structure and a molding compound adjacent to the conductor structure ( 135 ), wherein the conductor structure arranged in a first plane front-side conductor sections ( 121 . 122 . 123 ), in a second plane offset from the first level arranged rear conductor sections ( 125 ) and between the front and rear conductor sections ( 121 . 122 . 123 . 125 ) extending intermediate sections ( 127 ), and wherein the front conductor sections ( 121 . 122 . 123 ) on the front side ( 181 ) and the rear conductor sections ( 125 ) on the back ( 182 ) of the carrier ( 130 ). Semiconductor device ( 102 ) according to claim 12, wherein on the front side ( 181 ) of the carrier ( 130 ) an embedding layer ( 165 ) which is arranged laterally on the at least one semiconductor chip ( 140 ) so that a front side of the at least one semiconductor chip ( 140 ) not with the embedding layer ( 165 ), the embedding layer ( 165 ) a recess ( 166 ), over which a part of a front-side conductor section ( 122 ) is exposed, and wherein the at least one semiconductor chip ( 140 ) via a contact layer ( 157 ) with the exposed part of the front conductor section ( 122 ) connected is. Display device comprising a printed circuit board ( 210 ), several on the circuit board ( 210 ) arranged semiconductor components ( 101 . 102 . 103 . 104 . 201 ) according to one of claims 12 or 13 and a potting material ( 205 ), wherein the at least one semiconductor chip ( 140 ) of the semiconductor components is a radiation-emitting semiconductor chip, and wherein the potting material ( 205 ) on the printed circuit board ( 210 ) is arranged in areas next to and between the semiconductor devices.

Images