DE102014105734A1 - Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component - Google Patents

Abstract

The optoelectronic semiconductor component (1) comprises a carrier (2). The carrier (2) includes a microcontroller (26) for electrical addressing and control of the semiconductor device (1). At least one optoelectronic semiconductor chip (3), which is set up to generate light, is attached to a carrier top side (23) of the carrier (2) and electrically connected to the microcontroller (26). The semiconductor device (1) has at least three electrical contact points (4), wherein at least two of the contact points (4) are connected to the microcontroller (26). At least one optical body (5) for geometrical and / or spectral beam shaping is located directly or indirectly on the carrier top side (23).

Description

An optoelectronic semiconductor component is specified. In addition, a method for producing an optoelectronic semiconductor device is specified.

An object to be solved is to specify an optoelectronic semiconductor component which can be electrically connected electrically.

This object is achieved inter alia by an optoelectronic semiconductor component and by a method having the features of the independent patent claims. Preferred developments are the subject of the dependent claims.

In accordance with at least one embodiment, the semiconductor component has one or more carriers. The at least one carrier has a microcontroller. Preferably, each of the carriers has one or more microcontrollers. By means of the microcontroller electrical addressing and electrical control of the semiconductor device and / or individual components of the semiconductor device is possible.

In accordance with at least one embodiment, the semiconductor component includes one or more optoelectronic semiconductor chips. The at least one semiconductor chip is, for example, a light-emitting diode or a laser diode. In other words, the at least one optoelectronic semiconductor chip is temporarily or permanently set up to produce light, in particular visible light, during operation of the semiconductor component.

The optoelectronic semiconductor chip has a semiconductor layer sequence with at least one active zone. The semiconductor layer sequence is preferably based on a III-V compound semiconductor material. The semiconductor material is, for example, a nitride compound semiconductor material such as Al _n In _{1 nm} Ga _m N or a phosphide compound semiconductor material such as Al _n In _{1 nm} Ga _m P or an arsenide compound semiconductor material such as Al _n In _1-nm Ga _m As, where 0 ≦ n ≦ 1, 0 ≦ m ≦ 1 and n + m ≦ 1, respectively. In this case, the semiconductor layer sequence may have dopants and additional constituents. For the sake of simplicity, however, only the essential constituents of the crystal lattice of the semiconductor layer sequence, that is to say Al, As, Ga, In, N or P, are indicated, even if these may be partially replaced and / or supplemented by small amounts of further substances.

In accordance with at least one embodiment, the at least one semiconductor chip is attached to a carrier top side of the carrier. If a plurality of semiconductor chips and a plurality of carriers are present, this is preferably true for all semiconductor chips.

In accordance with at least one embodiment, the one or more semiconductor chips are electrically connected to the microcontroller. In particular, the one or more semiconductor chips are specifically individually addressable and electrically controllable via the microcontroller.

According to at least one embodiment, the semiconductor device comprises two, three or more than three electrical contact points. The at least two or at least three electrical contact points are set up for external electrical contacting of the semiconductor component. The contact points are preferably a contact for a power supply, a ground contact and a contact for a data line.

In accordance with at least one embodiment, at least one or at least two of the contact points are electrically connected to the microcontroller. As a result, a control of a current flow to the associated semiconductor chip is possible as well as a recording and processing of external control signals.

In accordance with at least one embodiment, the semiconductor component has at least one optical body. The one or more optical bodies are set up for geometrical and / or spectral beam shaping of the light generated by the at least one semiconductor chip during operation. For example, an angular distribution of the emitted radiation is influenced by the optical body or by means of the optical body, spectral components are removed from the light generated in the semiconductor chip and / or added.

In accordance with at least one embodiment, the at least one optical body is located on the carrier top side. The optical body may be limited to the carrier top. It is the optic body indirectly, so with the help of other components, or directly, so in direct physical contact, attached to the carrier top.

In at least one embodiment, the optoelectronic semiconductor device comprises a carrier. The carrier includes a microcontroller for electrical addressing and control of the semiconductor device. At least one optoelectronic semiconductor chip, which is set up to generate light, is mounted on a carrier top side of the carrier and is electrically connected to the microcontroller. The semiconductor device has at least three electrical contact points, wherein at least two of the contact points are connected to the microcontroller. At least one optic body too a geometric and / or spectral beam shaping is located directly or indirectly on the carrier top side of the carrier.

Particularly in vehicles such as automobiles, a trend towards ever higher resolutions, especially with adaptive headlight systems, can be observed. If individual semiconductor chips such as light-emitting diodes each with two terminals, for an anode and for a cathode, arranged in a matrix, so is a Verschaltungsaufwand relatively high due to the large number of required electrical lines. Furthermore, an arrangement of a plurality of such semiconductor chips is prone to error during assembly. Due to the space required for the large number of interconnects, namely two per semiconductor chip, an arrangement density is also limited. A size of the tracks is also limited due to the relatively high power requirements of the semiconductor chips down. The printed conductors must therefore have a comparatively large cross section.

In the case of the semiconductor device described here, a number of the electrical lines are simplified due to the addressing and control by the microcontroller integrated in the carriers. As a result, a denser arrangement of the semiconductor chips can be realized, along with a higher possible surface luminance.

In accordance with at least one embodiment, a plurality of the carriers are mechanically integrated in a carrier assembly. For example, the carrier by a plastic body, made for example by means of pressing or spraying, firmly connected. This means that the carriers do not separate from each other in the intended use of the semiconductor device and do not change in their relative position to each other. Preferably, all carriers are in a common plane. In this case, the carrier composite is preferably planar and planar.

In accordance with at least one embodiment, a part of the semiconductor chips or all semiconductor chips are applied to the carrier assembly. Carrier tops of the carriers preferably all have the same direction, and the semiconductor chips are attached to the carrier tops. Furthermore, it is possible for the semiconductor chips to be located in a further common plane, in particular parallel to the carrier top sides.

In accordance with at least one embodiment, the semiconductor device comprises one or more optical shields. The at least one optical shield is radiopaque for light generated during operation of the semiconductor device. By the shield adjacent semiconductor chips are preferably optically isolated from each other. As a result, a high contrast between adjacent semiconductor chips can be achieved.

In accordance with at least one embodiment, the shields between adjacent semiconductor chips are respectively mounted such that there is no light path between adjacent semiconductor chips within the semiconductor device. In other words, due to the shields and possibly due to further components within the semiconductor device, no light can pass from one of the semiconductor chips to another semiconductor chip. Within the semiconductor device means that only distances or possible distances are taken into account, which run completely in an interior of the semiconductor device. For example, backscatter due to external, external components that do not belong to the semiconductor component remains disregarded.

In accordance with at least one embodiment, a plurality of the semiconductor chips are assigned to one of the carriers or vice versa. For example, two, three, four or more than four of the semiconductor chips are preferably uniquely assigned to one of the carriers.

In accordance with at least one embodiment, the semiconductor chips and the carriers are in a one-to-one arrangement. The semiconductor chips and the carriers are thus uniquely associated with each other.

In accordance with at least one embodiment, the semiconductor component comprises one or more potting materials. The at least one potting material is preferably radiopaque for light generated by the semiconductor chips. The potting material may be an observer white or black or colored appearing material.

In accordance with at least one embodiment, the semiconductor chips are surrounded in each case by the potting material. The semiconductor chips may be in direct contact with the potting material. Furthermore, the potting material can touch the carrier top.

In accordance with at least one embodiment, the semiconductor chips each have a main radiation side. The predominant portion of the radiation generated in the semiconductor chips is emitted out of the semiconductor chips via the main radiation side. Preferably, the potting material, in the direction away from the associated carrier top, extends to the main radiation side. It is possible that the potting material is flush with the main radiation side or also projects beyond the radiation main side in the direction away from the carrier.

In accordance with at least one embodiment, the semiconductor device includes one or more conversion means. The at least one conversion means is set up for a partial or complete conversion of the light emitted by the at least one semiconductor chip into a radiation of another, in particular larger, wavelength.

In accordance with at least one embodiment, the at least one conversion means in the direction away from the carrier top side is arranged downstream of the associated semiconductor chip and optionally also the associated potting material. The conversion means preferably covers the associated semiconductor chip completely, as seen in plan view of the main radiation side.

In accordance with at least one embodiment, the optical body is formed at least by the potting material and by the conversion means. Furthermore, the optical body can have a further component, such as a scattering agent. The optical body can therefore comprise several components. The various components of the optic body may be formed by different materials. The different components of the optic body preferably touch each other. In particular, the optical body is designed by a coherent material area. The optic body can be a mechanical unit. Optionally, the optical body can be handled separately from other components of the semiconductor device.

According to at least one embodiment, the scattering means is located between the potting material and the conversion means and between the main radiation side and the conversion means. The scattering agent is preferably arranged in a layered and radiation-permeable manner. For example, the scattering agent comprises a matrix material which is transparent and light-scattering particles introduced into the matrix material. The scattering means is preferably set up for a radiation expansion in the direction parallel to the at least one carrier top side. By the scattering agent, for example, a uniform illumination of the conversion agent is possible.

In accordance with at least one embodiment, the scattering means completely covers the semiconductor chip and the potting material, as seen in plan view on the main radiation side. In particular, the scattering means extends completely between the conversion means on the one hand and the potting material and the semiconductor chip on the other hand, so that these components are separated from one another by the scattering means.

In accordance with at least one embodiment, the optoelectronic semiconductor component has electrical lines. The electrical lines are set up for an electrical connection within the semiconductor component. In particular, the electrical lines extend between the electrical contact surfaces, the microcontroller and / or the at least one semiconductor chip.

According to at least one embodiment, at least a part of the electrical leads is located between the potting material and the conversion means. In this case, the at least one semiconductor chip is preferably contacted with bonding wire via the electrical leads in connection with plated-through holes, in particular through the casting material and / or through the support. At least one of the electrical lines preferably reaches the main radiation side of the at least one semiconductor chip. Alternatively, it is possible that the semiconductor chip is contacted on the main radiation side by means of a bonding wire. The bonding wire can be completely or partially embedded in the potting material and / or the scattering agent and / or the conversion agent.

According to at least one embodiment, there are further electrical lines between the carrier composite and the potting material. These electrical lines are applied, for example, to the at least one carrier top side and to an upper side of the carrier network on which the semiconductor chips are located. Alternatively or additionally, it is possible for electrical lines to also be located on an underside of the carrier composite facing away from the semiconductor chips.

In accordance with at least one embodiment, the at least one shield extends into the potting material or through the potting material. It is possible that the shields rests on the electrical lines at the top of the carrier assembly and is in contact with these lines. Alternatively, the shield can be placed on the potting material.

In accordance with at least one embodiment, the at least one shield is formed from an electrically insulating material. Alternatively or additionally, the shield has a coating of an electrically insulating material. The shield may also be made entirely or partially of a metal or a metal alloy, for example by electroplating.

In accordance with at least one embodiment, the shields completely surround the respective associated semiconductor chip in the shape of a frame and all around, in particular seen in plan view on the main radiation side. The shields can be designed round, oval, hexagonal, rectangular or square, seen in plan view.

According to at least one embodiment, all the shields of the semiconductor device are designed as a single piece and hang together. The shields then form a kind of grid, which can be placed on the carrier composite.

In accordance with at least one embodiment, all the electrical contact surfaces for external electrical contacting of the semiconductor component are located on the same side of the carrier assembly, that is to say on the upper side or on the underside of the carrier assembly. Alternatively, the electrical contact surfaces can be divided and located on both sides of the carrier composite, ie at the top and at the bottom.

In accordance with at least one embodiment, the electrical contact surfaces are not surrounded or bordered by the optical shields. In other words, then the contact surfaces are not within the shields.

In accordance with at least one embodiment, the semiconductor chips have a common ground contact and / or a common supply voltage line. It is thus possible for all the semiconductor chips to share at least one electrical contact surface and at least one conductor track and / or to be connected in parallel to this conductor track and this contact and / or to be electrically connected directly to this conductor track and this contact.

In accordance with at least one embodiment, the semiconductor device is surface mountable. That is, the semiconductor device can be mounted on an external support by surface mounting, SMT for short.

According to at least one embodiment, at least one of the semiconductor chips together with the associated optical body for emitting blue light and / or at least one of the semiconductor chips together with the associated optical body for emitting green light and / or at least one of the semiconductor chips together with the associated optical body for emitting red light set up. It is possible that the respective semiconductor chips directly produce blue, red or green light. It is likewise possible for one or more conversion means to be arranged downstream of the semiconductor chips or at least a part of the semiconductor chips for a wavelength conversion, for example for the generation of green light.

Likewise, differently colored light, for example cyan or yellow light, can be generated by the semiconductor chips together with the associated optical body. The semiconductor chips can thus be differently constructed semiconductor chips, which are based for example on different semiconductor materials. It is also possible that the semiconductor chips are all identical in construction and, for example, are set up to produce blue light. The semiconductor device may emit mixed radiation, such as white light. The mixed radiation is then composed of the light of the plurality of semiconductor chips.

In accordance with at least one embodiment, the semiconductor component has a light exit surface. At the light exit surface, different colors of the light generated in the semiconductor device are emitted at different locations. The division into differently colored light-emitting regions is achieved in particular by the optical shielding. The light exit surface can be designed planar or curved. Outside the semiconductor component, a light mixture can then take place.

According to at least one embodiment, an average distance between adjacent semiconductor chips is at least 3% or 5% or 7% of a mean edge length of the semiconductor chips. Alternatively or additionally, this distance is at most 30% or 20% or 15% or 10% of the mean edge length. In particular, the average spacing is at least 10 μm or 20 μm or 40 μm and / or at most 150 μm or 100 μm or 65 μm. The average edge length of the semiconductor chips may be at least 200 μm or 400 μm or 600 μm and / or at most 1200 μm or 800 μm or 600 μm or 300 μm.

In accordance with at least one embodiment, a plurality of the semiconductor chips are combined to form a group, in particular to a pixel. The pixel preferably has comparatively large dimensions. For example, an average edge length of the pixel is at least 400 .mu.m or 600 .mu.m or 800 .mu.m, seen in plan view. By using such relatively large pixels and comparatively large semiconductor chips, a high surface luminance is achievable.

In accordance with at least one embodiment, all the microcontrollers have a common supply voltage and / or a common ground connection. Alternatively or additionally, it is possible that all microcontrollers are mounted on a common data line. In this case, the common data line can be looped through the microcontroller. The respective microcontroller then have a data input and a data output, wherein a data output of a preceding microcontroller preferably with a data input of a subsequent microcontroller is connected.

In accordance with at least one embodiment, the semiconductor chips are arranged in a two-dimensional matrix.

That is, the semiconductor chips may be arranged regularly two-dimensionally, seen in plan view in particular on the main radiation sides.

In accordance with at least one embodiment, the semiconductor chips have a base area deviating from the associated carrier and / or floor plan, viewed in plan view, in particular, on the main radiation side. The semiconductor chips can therefore project beyond the associated carrier in places or all around. The semiconductor chips may be larger or smaller than the associated carrier. Alternatively, it is possible for the semiconductor chips to be congruent with the respectively associated carriers. Furthermore, it is possible for one or more of the semiconductor chips to project beyond the associated carrier, as seen in plan view.

In accordance with at least one embodiment, the shield terminates flush with the optic body in the direction away from the carrier. Furthermore, the shield can be flush with the light exit surface of the semiconductor device and form part of the light exit surface.

According to at least one embodiment, the shields do not overlap with the semiconductor chip, seen in plan view of the main radiation side. That is, the semiconductor chips are preferably not covered by the radiation-transmissive shielding.

In accordance with at least one embodiment, the shield is spaced from the associated carriers and / or from the associated semiconductor chips. That is, the shield then does not touch the carriers and / or the semiconductor chips.

In addition, a method for the production of optoelectronic semiconductor devices is specified. In particular, by means of the method, a semiconductor component is produced, as indicated in connection with one or more of the abovementioned embodiments. Features of the method are therefore also disclosed for the semiconductor device and vice versa.

• – Bereitstellen einer Vielzahl von Trägern und einer Vielzahl von Halbleiterchips,
• – Anbringen der Halbleiterchips an den Trägeroberseiten,
• – elektrisches Verschalten der Halbleiterchips mit den Mikrocontrollern der Träger, und
• – Fertigstellen der Halbleiterbauteile.

In at least one embodiment, the method comprises at least the following steps, preferably in the order given:

• Providing a plurality of carriers and a plurality of semiconductor chips,
• Attaching the semiconductor chips to the carrier tops,
• - electrically interconnecting the semiconductor chips with the microcontrollers of the carriers, and
• - Completing the semiconductor devices.

In accordance with at least one embodiment of the method, the step of providing the carriers comprises the one-dimensional or two-dimensional or three-dimensional arrangement of the carriers. Subsequently, the carriers are formed with a carrier molding compound, such as by means of injection molding or injection molding. In this forming, top sides and undersides of the carriers preferably remain free of the carrier molding compound. As a result of this shaping, the carriers are preferably mechanically firmly integrated into the carrier composite and the carrier composite is formed.

In accordance with at least one embodiment, the step of providing the carriers comprises the formation of conductor tracks on one or both sides of the carrier assembly. The conductor tracks are produced for example by means of electroplating or vapor deposition.

In accordance with at least one embodiment, the step of providing the semiconductor chips comprises the step of reshaping the one-dimensionally, two-dimensionally or three-dimensionally arranged semiconductor chips with a forming compound. The molding compound is preferably a plastic such as a silicone or an epoxy. By forming the semiconductor chips are mechanically, in particular mechanically fixed, integrated in a frame assembly and the frame assembly is formed. Electrical contact surfaces of the semiconductor chips and the main radiation side preferably remain free of the forming material. In this case, mechanically fixed means in particular that the semiconductor chips do not come loose from the frame assembly in the intended use of the semiconductor component. It is possible that in each case an optical insulation is located between the forming material and / or the carrier molding compound and the semiconductor chips, so that prevents radiation generated in the semiconductor chips passes directly to the forming material and / or to the carrier molding composition.

According to at least one embodiment, the frame assembly is mounted on the carrier assembly. In this case, an unambiguous assignment of the semiconductor chips to the carriers preferably takes place. The frame composite can be congruent with the carrier composite or it can also be several side by side or superimposed frame composites are applied to a single carrier composite or vice versa.

In accordance with at least one embodiment, the carrier composite, which is joined together with the frame composite, is singulated or assembled into the semiconductor components. After singulation, each of the semiconductor components has one or more of the semiconductor chips and / or the carrier.

As an alternative to forming a frame composite, the semiconductor chips can also be applied individually to the carrier composite. In this case, the semiconductor chips are preferably partially or completely formed, for example by casting or spraying or pressing, after application to the carrier composite, for example with the potting material, the scattering agent and / or the conversion agent. Before, in or after this process step, the generation of the optical shield can also take place.

Hereinafter, an optoelectronic semiconductor device described herein and a method described herein with reference to the drawings using exemplary embodiments will be explained in more detail. The same reference numerals indicate the same elements in the individual figures. However, there are no scale relationships shown, but individual elements can be shown exaggerated for better understanding.

Show it: 1 . 3 . 6 . 7 . 8th . 11 . 12 and 13 to 18 schematic representations of embodiments of optoelectronic semiconductor devices described herein, and

2 . 4 . 5 . 9 and 10 schematic representations of embodiments of methods for producing optoelectronic semiconductor devices described herein.

In 1A is in a sectional view taken along the line AA of the plan view in FIG 1B an embodiment of an optoelectronic semiconductor device 1 shown.

The semiconductor device 1 has a carrier composite 20 on. The carrier network 20 is by several carriers 2 formed by a carrier molding compound 28 mechanically interconnected. At a bottom of the carrier composite 20 , which also contains subpages 24 the carrier 2 is a metallization 9 appropriate. About the metallization 9 is the semiconductor device 1 attachable to an external carrier, not shown, for example by means of soldering.

On vehicle tops 23 the carrier 2 there is in each case an optoelectronic semiconductor chip 3 , The semiconductor chips 3 are in particular each light-emitting diodes, short LEDs. The semiconductor chips 3 are at the vehicle tops 23 attached. Radiation main sides 30 the semiconductor chips 3 are the carriers 2 respectively turned away. For an electrical contacting extends a bonding wire 75 from the carrier top 23 to the main radiation side 30 ,

To an electrical external contacting are on an upper side of the carrier composite 20 several electrical contact points 4 appropriate. The contact points 4 are via electrical lines 7 with the carriers 2 as well as with the semiconductor chips 3 electrically connected. At the electrical wires 7 For example, these are metal tracks.

The carriers 2 each contain a microcontroller 26 , The microcontroller 26 is in or on a carrier substrate 27 the carrier 2 educated. For example, the carrier is based 2 on silicon and the microcontroller 26 is formed by one or more recrystallized silicon layers or comprises at least one such layer. About the microcontroller 26 are the individual semiconductor chips 3 addressable and selectively controllable, in particular individually controllable.

The microcontroller 26 is preferably monolithic in the carrier 2 integrated. In particular, the microcontroller 26 a register such as a shift register, transistors and / or switches. The microcontroller is preferred 26 manufactured in silicon technology. Instead of silicon, the carrier can 2 but also based on another semiconductor material such as germanium.

Furthermore, the semiconductor device has 1 optical shields 6 on. The shields 6 are each located between adjacent semiconductor chips 3 and extending from the top of the carrier composite starting up to a light exit surface 10 of the semiconductor device 1 , Through the shields 6 is preferably prevented in one of the semiconductor chips 3 generated light within the semiconductor device 1 to adjacent semiconductor chips 3 arrives. The shields 6 are thus radiopaque for light generated during operation of the semiconductor device.

At the carrier tops 23 each is a radiation-permeable potting material 51 , From the carriers 2 The casting material is sufficient 51 to the main radiation sides 30 approach. The potting material 51 is through the shields 6 divided into several separate areas.

The potting material 51 follows towards the porters 2 a conversion agent 53 to. For example, the conversion agent 53 set up a part of a blue light that is in the semiconductor chips 3 is generated during operation, too absorbing and converting it into yellow light. In this way, with the conversion means and with the semiconductor chips 3 For example, white light or colored light can be generated.

The shields 6 each pass through the potting material 51 through and border the potting material 51 as well as the conversion agent 53 to individual, optically separated units. The potting material 51 together with the conversion agent 53 fills the shields 6 preferably completely off. The light exit surface 10 of the semiconductor device 1 is through the shields 6 together with the conversion means 53 educated. The light exit surface 10 is planar and flat. Optionally, on the light exit surface 10 a protective layer or other optics such as a lens, not shown, be applied.

In 2 is given in sectional views and in plan views a manufacturing method for a further embodiment of the optoelectronic semiconductor device. The figure parts A1, B1, C1 and so on each denote sectional views, and the figure parts A2, B2, C2 and so on each relate to plan views.

In 2A is shown that several of the carriers 2 with the microcontrollers 26 and the carrier substrates 27 on a temporary subcarrier 8th be applied. The carriers 2 already have electrical contact points 4 to an electrical contacting of the carrier 2 , Deviating from the illustration, it is also possible that the microcontroller 26 closer to the underside of the carrier 24 is located as on the carrier top 23 , It can all carriers 2 be identical or different.

The carriers 2 show, seen in plan view, each have a large contact area 4 on, for mounting the semiconductor chip 3 is set up, compare also 2D , Furthermore, four smaller electrical contact points 4 per carrier 2 intended.

In 2 B is shown that the carrier 2 at the subcarrier 8th with a carrier molding compound 28 be surrounded. As a result, the individual carriers 2 to the carrier network 20 summarized. In the intended use of the semiconductor device 1 is the carrier composite 20 mechanically stable, so that the carrier 2 are immovably mounted relative to each other. The carrier composite is preferred 20 just designed. Deviating from the illustration according to 2 can the carrier composite 20 but also have a curved top.

In 2C is shown on the bottoms 24 as well as on the topsides 23 the electrical wires 7 , further electrical contact points 4 as well as the metallization 9 be applied, for example by means of electroplating and / or by vapor deposition. About the electrical wires 7 are the contact points 4 at the respective carriers 2 and also between the carriers 2 electrically interconnected. The continuous metallization 9 at the bottoms 24 preferably serves only for attachment of the carrier composite 20 and to a thermal contacting of the carrier composite 20 , According to 2C is the subcarrier 8th away.

In the process step, as in 2D shown, at the larger contact surfaces of the carrier 2 in each case the semiconductor chips 3 attached, for example by gluing or by soldering. The semiconductor chips 3 In this case, preferably project beyond the electrical lines 7 towards the carrier network 20 , For an electrical contact, the semiconductor chips 3 one electrical contact point each 4 at the main radiation side 30 on. Notwithstanding this, it is also possible that it is the semiconductor chips 3 is flipchips whose contact points then either the carrier composite 20 facing or the carrier composite 20 are turned away, as is possible in all other embodiments.

To an external electrical contact, the semiconductor device 1 , as in 2D shown, the four marginal, smaller contact points 4 on. One of the contact points is designed as a ground contact GND and is on the electrical lines 7 with all the carriers 2 as well as microcontroller 26 connected. Furthermore, a supply voltage VCC to all carriers 2 guided. About the supply voltage VCC are preferably the contact points 4 the semiconductor chips 3 at the main radiation side 30 connected.

Furthermore, a contact point for a data input Din and for a data output Dout is provided. The respective data inputs Din the carrier 2 are routed to the respective microcontrollers and looped through the respective data output Dout to the subsequent carrier 2 guided. Thus, in each case one data input Dout from a carrier 2 with a data output Din of a subsequent carrier 2 electrically connected.

Unlike in the figures, it is also possible in each case, a different number of data lines and electrical contact points 4 to provide for external contact. For example, a separate line for a data input, for a data output and for a time signal, English clock, be provided. In a departure from the illustration, it is also possible for the data signal to be transported together with the supply voltage, for example via a modulating-on, so that then only two external connections for controlling the semiconductor chips 3 required are.

In a further process step, as in 2E is shown, a radiation-permeable potting material 51 around the LED chips 3 attached around. The potting material 51 covers the tracks 7 at the top of the carrier composite 20 , It is the potting material 51 on the top of the carrier composite 20 limited. The electrical contact points 4 at the radiation main sides 30 preferably remain free of the potting material 51 ,

In 2F is shown by the potting material 51 through vias 73 be formed. These vias 73 are formed for example by holes that are filled with a metal completely or partially. To the vias 73 close the electrical wires 7 at one of the carrier composite 20 opposite side of the potting material 51 at. About these electrical wires 7 are the main radiation sides 30 the semiconductor chips 3 electrically contacted.

According to 2G be on the potting material 51 the shields 6 applied. The shields 6 are integrated in a single piece of material. The shields 6 cover the semiconductor chips 3 not, seen in plan view. Through the shields 6 are cavities in the direction away from the carrier composite 20 above the semiconductor chips 3 Are defined.

In 2H is shown that through the shields 6 defined cavities with the conversion agent 53 be filled. Preferably, as in all other embodiments, is located between the potting material 51 and the conversion means 53 one scattering agent each 52 , About the spreading agent 52 is a lateral expansion of the semiconductor chips 3 Radiation emitted during operation is possible, so that the conversion agent 53 preferably in each case uniformly from the semiconductor chips 3 is illuminated. The scattering agent 52 as well as the conversion agent 53 are applied in particular as a uniformly thick layer and extend beyond the shields 6 not, away from the semiconductor chips 3 ,

Unlike in 1 , it acts according to 2 at the potting material 51 around a single, coherent layer. The shields 6 are on the potting material 51 put on and penetrate the potting material 51 not, other than according to 1 , Through the shields 6 are the individual scattering agents 52 and conversion agents 53 separated from each other.

In the component according to 2 a contacting of the semiconductor chips takes place 3 Bond wire free over the electrical wires 7 that is partly between the potting material 51 and the scattering agent 52 are located. The electrical contact points 4 for external electrical contacting of the semiconductor device 1 are on the same side as the metallization 9 and thus at the semiconductor chips 3 opposite underside of the carrier composite 20 , The contact points 4 are over the vias 73 through the carrier network 20 through with the electrical wires 7 at the top of the carrier composite 20 connected.

The manufacturing process, as in 2 described, can also be applied to optoelectronic semiconductor devices 1 , as in connection with the 1 or 3 represented, transmitted.

In 3A is in a sectional view and in 3B in a plan view, another embodiment of the semiconductor device 1 shown. Deviating from the illustration according to 2H are the contact points 4 for external electrical contacting on the same side of the carrier composite 20 like the semiconductor chips 3 and thus at the top. That's why there are more vias 73 towards these contact points 4 through the potting material 51 shaped. Thus, the carriers 2 as well as the carrier network 20 free of electrical vias, as well as in connection with 1 is shown.

Loud 3A towers over the scattering agent 52 , as preferred in all other embodiments, the semiconductor chips 3 each side, so in the direction parallel to the carrier tops 23 , As a result, an illumination of the conversion agent 53 also possible in areas that are not directly above the main radiation side 30 lie, in the direction away from the carrier network 20 , A light-emitting area at the light exit surface 10 is thus preferred by the complete, by the conversion agent 53 given area covered.

Only in the narrow areas where the light exit surface 10 through the shields 6 is formed, no light is at the light exit surface 10 emitted. A width as well as an area of these very narrow areas, through the shields 6 are formed, however, is negligible. For example, this width is at most 60 μm or 30 μm or 15 μm or 10 μm. Therefore, to a downstream optics for laminating the non-light-emitting regions of the light exit surface 10 dispensable. For a viewer, therefore, the light exit surface appears 10 preferably in the on state as continuously lit, with or without downstream optics. If a downstream optics is used, it is preferred additional effort to optically blur the shields 6 dispensable, due to the very narrow, non-luminous areas.

In 4 a further embodiment of a manufacturing method is shown. According to 4A becomes the carrier composite 20 with the carriers 2 , connected together via the carrier molding compound 28 , provided. On the carrier composite 20 are already the metallization 9 , the electrical wires 7 as well as the electrical contact points 4 attached for external contacting.

According to 4B becomes a frame composite 33 provided. In the frame network 33 are the individual semiconductor chips 3 summarized. The semiconductor chips 3 are about a forming material 38 mechanically interconnected. At the radiation main sides 30 are in the frame network 33 already the electrical wires 7 shaped. Furthermore, the frame composite 33 the vias 73 on.

In 4C is shown that the frame composite 33 on the carrier network 20 is applied. In this case, a one-to-one assignment of the semiconductor chips takes place 3 to the carriers 2 ,

The manufacturing process, as in the 5A and 5B shown corresponds to the manufacturing method according to 4 , However, the frame composite 33 additional vias 73 on, leaving all electrical contact points 4 to an external electrical contacting of the semiconductor device 1 at a carrier network 20 facing away from the top of the frame composite 33 are located. The contact points 4 are thus essentially in a common plane with the main radiation sides 30 the semiconductor chips 3 , According to 5B becomes the frame composite 33 on the carrier composite 20 applied, wherein the electrical leads, vias and pads are brought into contact with each other.

In 6 are schematic plan views of further embodiments of semiconductor devices described herein 1 shown. In 6A is a larger, two-dimensional arrangement of the semiconductor chips 3 on the carrier composite 20 shown. The semiconductor chips 3 are grouped. Separation areas S are optionally mounted between adjacent groups. The separation areas S are, for example, sawing streets, along which the carrier composite 20 to semiconductor devices 1 with a smaller number of semiconductor chips 3 can be isolated.

According to 6B are each three of the semiconductor chips 3 grouped together. Each of the groups of three of the semiconductor chips 3 has four of the contact points 4 and only a small number of tracks on. The groups 3 may be arranged mirror-symmetrically to an optionally existing separation region S between the groups.

In 6C is a grouping of the semiconductor chips in the left half of the picture 3 and interconnection of the semiconductor chips 3 analogous to 6B shown. An interconnection is illustrated in the right-hand half of the figure, with several of the groups being connected via correspondingly guided electrical lines 7 are connected in series. For example, for the five threes in the right half of the 6C For a total of only four of the electrical contact points 4 required for external electrical contact. It is not absolutely necessary that all of the lines 7 run in a plane. For optimizing the interconnection, it is also possible for conductor bridges to be present, so that a three-dimensional network of lines is created. The semiconductor chips 3 are individually electrically controlled by means of the microcontroller.

In the plan view according to 7A is a semiconductor device 1 mounted on an external mounting plate E, for example a metal plate with or without tracks. The semiconductor device 1 has a matrix of 25 × 6 regularly arranged semiconductor chips. For electrical connection and activation of the semiconductor device 1 are preferably only three tracks, so for a ground terminal, a supply voltage and a data line required.

According to 7B are on the external carrier E 50 of the semiconductor devices 1 appropriate. In each case 25 of the semiconductor components 1 arranged in a row. Each of the semiconductor components 1 has, for example, three semiconductor chips 3 on. For connecting and controlling these semiconductor components 1 are preferably also required only three tracks on the mounting plate E.

Such semiconductor devices 1 , as in connection with 7B may be constructed as shown in plan view 8th shown. In this case, the only schematically illustrated electrical lines and electrical contacts can be performed, such as in connection with the 1 to 3 shown.

The semiconductor device 1 in 8th has a red light emitting unit R, a green light emitting unit G and a blue light emitting unit B. The corresponding wavelengths can be generated directly in the respective semiconductor chips or also arise only in combination with a conversion agent.

In 9 is a manufacturing method for semiconductor devices shown, each only a carrier 2 and a semiconductor chip 3 exhibit. According to 9A becomes a semiconductor chip 3 provided. Further, a carrier 2 with the contact points 4 , Vias 73 as well as electrical lines 7 provided. According to 9B is the semiconductor chip 3 on the carrier 2 with the microcontroller 26 applied.

In 9C you can see that the main radiation side 30 of the semiconductor chip 3 by means of a bonding wire 75 with the carrier 2 will be contacted. All external electrical contact points 4 are according to 9C at the carrier base 24 , see the bottom view according to 9C3 ,

Further, see 9D , the semiconductor chip 3 in a lateral direction around the radiopaque and reflective potting material 51 surround. For example, the potting material 51 , as is also possible in all other embodiments, a silicone as a matrix material in which reflective particles such as titanium dioxide or alternatively absorbent particles are introduced about from soot. On the potting material 51 eventually becomes the conversion agent 53 applied so that the optic body 5 is completely formed and the semiconductor device 1 is finished.

The process steps of the manufacturing process, as in the 10A and 10B shown correspond to the method steps according to the 9A and 9B , Deviating from 9 will, however, see 10C after mounting the semiconductor chip 3 the potting material 51 appropriate.

Subsequently, an opening 77 in the potting material 51 generated, see 10D , Below is the opening 77 filled by a metallization 9 so that the via 73 from the carrier 2 through the potting material 51 as well as the electrical line 7 towards the main radiation side 30 is produced. Subsequently, analogously to 9D , the conversion agent 53 Applied, compare 10F ,

In particular, for semiconductor devices, as in connection with the 9 and 10 made in, are 11 further possible designs of the contact points 4 shown in subviews.

According to 11A are the contact points for a data input Din and for a data output Dout between the contact points 4 for the ground contact GND and the supply voltage VCC. The latter contact points are made larger. Deviating from this are in 11B the contact points 4 for the data input Din and for the data output Dout to an edge of the carrier 2 appropriate.

Corresponding arrangement schemes of the contact points 4 as for a single wearer 2 can be shown analogously for a carrier composite 20 with a variety of straps 2 be used. The arrangement schemes of 11 are thus in particular to the embodiments, as in connection with the 1 to 3 represented, transferable.

In 12 are schematic plan views of light exit surfaces 10 of further embodiments of semiconductor devices 1 illustrated. According to 12 In order to simplify the illustration, only one group of semiconductor chips is shown, which are combined into a single pixel, for example.

In 12A It is shown that a single light-emitting region is present, for example, by a conversion agent 53 is formed. This area emits, for example, white light and thus represents a white-emitting area W.

According to 12B is a red emitting area R, a blue emitting area B and a green emitting area G present. Deviating from this are according to 12C two smaller, red emitting areas R present. Corresponding arrangements, in particular in connection with the 12B and 12C can be shown in semiconductor devices 1 , as in connection with 8th shown, alternatively find use. Corresponding groupings and top views of pixels can also be used in semiconductor devices 1 from the 7A and 7B be implemented in an analogous manner.

Further circuit concepts for semiconductor components described here are the document DE 10 2012 111 247 A1 refer to. The disclosure of this document is incorporated by reference.

As an alternative to applying separate semiconductor chips to the carrier with the microcontroller, it is also possible, unlike shown, to grow the semiconductor chips directly on the carriers or vice versa. Corresponding semiconductor chips and carriers are in connection with the publications DE 10 2012 109 460 A1 such as DE 10 2012 112 302 A1 specified. The disclosure of these documents with regard to connecting the carrier and the semiconductor chips is included by reference back.

In the case of the semiconductor components described here, in particular a small space requirement is given by the formation of the plated-through holes, electrical contact points and electrical leads. As a result, adjacent groups or pixels can be arranged closer. In particular, by the carrier with the microcontroller, it is possible to connect and control the semiconductor device with only a few external electrical contact points and to control a large number of semiconductor chips via only a few electrical lines.

Arrangements with only a few electrical wires 7 over which several of the semiconductor chips 3 are interconnected in the 13A and 13B shown. According to 3 are the semiconductor chips 3 each arranged along strands with three lines. For ease of illustration, only three of the semiconductor chips are along each strand 3 illustrated.

According to 13B is a number of electrical wires 7 further reduced, with the electrical wires 7 are drawn only simplified. Bridges between adjacent lines are symbolized by arrows.

In the embodiment, as in the plan view in 14A and in the sectional view in 14B Illustrated are several of the semiconductor chips 3 on a single carrier 2 appropriate. About in the carrier 2 integrated microcontroller are the semiconductor chips 3 preferably independently operable electrically. Incidentally, the embodiment corresponds to 14 the embodiment in 1 ,

According to the plan view of the embodiment of the semiconductor device 1 , as in 16 are shown, the three independently controllable semiconductor chips 3 in a triangle formation on the carrier 2 appropriate. The other components of the semiconductor device 1 as the shield or the optical body are not drawn to simplify the illustration.

In 16 is a plan view of another embodiment of the semiconductor device 1 shown. On the carrier 2 is a blue light emitting semiconductor chip 3B , a green light emitting semiconductor chip 3G and a red light emitting semiconductor chip 3G applied, all within the single shield 6 are located. The shield 6 Can do it directly on the carrier 2 be applied, with the shield 6 the carrier 2 not towered over, seen in plan view, unlike this example in 14 the case is.

Optionally, as in all other embodiments, a test contact 4t in particular for testing the semiconductor device 1 , such as before attaching the optic body 5 , to be available.

According to 17 has the semiconductor device 1 three semiconductor chips 3B . 3G . 3R on, as in connection with 16 described. Further, on the carrier 2 a fourth semiconductor chip 3B attached, that of the conversion agent 53 is covered and that together with the conversion agent 53 for producing mixed-colored light, preferably for generating white light. The conversion agent 53 is through the shield 6b from the rest, not the conversion agent 53 associated semiconductor chips 3B . 3G . 3R visually separated.

The shield 6a surrounds the carrier 2 around and lies, seen in plan view, next to the carrier 2 , Corresponding configurations of the shield relative to the carrier 2 , as in connection with the 16 and 17 can also be present in all other embodiments.

In the embodiments according to the 14 to 17 is ever just a carrier 2 in the carrier composite 20 available. Likewise, each can also have a variety of carriers 2 including the associated semiconductor chips 3 in the carrier composite 20 be integrated, analogous to about the embodiments according to the 1 to 8th ,

In the embodiments shown so far, the semiconductor chips 3 each on a support 2 limited, seen in plan view. According to 18 overhang the semiconductor chips 3 the carrier 2 , seen in top view. A corresponding arrangement of the semiconductor chips 3 on the carrier 2 can also be present in all other embodiments, even with a different number of semiconductor chips 3 ,

Due to the optical shields and the preferably existing scattering means for homogenizing the radiation, an array of semiconductor chips can be built up which has only negligible optical gaps. In particular, a light exit surface is lichtabstrahlend the whole surface, with the exception of narrow areas in which the shields are mounted. A width of the shields is preferably at most 1% or 3% or 5% or 10% or a mean extent of the light-emitting regions, seen in plan view. Additional optics for laminating the non-light-emitting regions are therefore unnecessary, since the non-light-emitting regions on the shields are negligibly small.

Furthermore, relatively large tray tolerances with respect to the semiconductor chips on the carriers due to the scattering means, as Homogenization layer serves to be accepted. In addition, a precise position of the optical grid, due to the shields, is of minor importance. The stacked arrangement of the semiconductor chips and the carrier with the microcontrollers also allows a structure with a narrower grid and thus with a higher luminance.

By integrating several functional units at the wafer level, see in particular the 4 and 5 , results in a compact and flat structure of the semiconductor device. With this structure, standard semiconductor chips such as standard light emitting diodes can be used, and various chip sizes can be efficiently combined with each other in a single semiconductor device.

Semiconductor components described here can be used, for example, in adaptive headlights of motor vehicles. Likewise, semiconductor components described here can be used in projectors or in general lighting or as so-called spotlights. A use in ambient lighting or ambient lighting is also possible, for example in the automotive sector, the illumination of a car sky or as scene lighting in a living area and / or in a business area.

The invention described here is not limited by the description based on the embodiments. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or exemplary embodiments.

LIST OF REFERENCE NUMBERS

1

 optoelectronic semiconductor device

10

 Light exit surface of the semiconductor device

2

 carrier

20

 carrier assembly

23

 Carrier top

24

 Carrier base

26

 microcontroller

27

 carrier substrate

28

 Carrier molding compound

3

 optoelectronic semiconductor chip

30

 Radiation main page

33

 frame joining

38

 Umformmasse

4

 electrical contact point

5

 optical body

51

 radiopaque potting material

52

 spreading material

53

 conversion means

6

 optical shielding

7

 electrical line

73

 electrical via

75

 bonding wire

77

 opening

8th

 subcarrier

9

 metallization

Din

 Data input line / connection

dout

 Data output line / connection

GND

 Ground line / connection

Vcc

 Supply voltage line / connection

R, G, B, W

 different colored emitting areas

e

 external carrier

S

 separation area

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 102012111247 A1 [0115]
• DE 102012109460 A1 [0116]
• DE 102012112302 A1 [0116]

Claims (15)

Optoelectronic semiconductor component ( 1 ) with a support ( 2 ), the at least one microcontroller for electrical addressing and control of the semiconductor device ( 1 ), - at least one optoelectronic semiconductor chip ( 3 ), which is set up to generate light and which is mounted on a carrier top ( 23 ) of the carrier ( 2 ) and is electrically connected to the microcontroller, - at least three electrical contact points ( 4 ), wherein at least two of the contact points ( 4 ) are connected to the microcontroller, and - at least one optical body ( 5 ) to a geometric and / or spectral beam shaping, which at the carrier top ( 23 ) is located. Optoelectronic semiconductor component ( 1 ) according to the preceding claim, which comprises several of the carriers ( 2 ) and a plurality of the semiconductor chips ( 3 ) and several opaque optical shields ( 6 ), where - all the carriers ( 2 ) in a carrier composite ( 20 ) are mechanically integrated and located in a common plane, - all semiconductor chips ( 3 ) on the carrier network ( 20 ) are applied and in a further common plane on the carrier tops ( 23 ), - the shields ( 6 ) in each case between adjacent semiconductor chips ( 3 ) are mounted such that within the semiconductor device ( 1 ) no light path between adjacent semiconductor chips ( 3 ), in each case at least two of the semiconductor chips ( 3 ) on one of the supports ( 2 ) and are electrically independently operable, - the semiconductor chips ( 3 ) within each of the shields ( 6 ) to an associated carrier ( 2 ) facing away from the radiation main side ( 30 ) of the semiconductor chips ( 3 ), away from the associated carrier top ( 23 ), of a radiopaque potting material ( 51 ) are surrounded all around, - the potting material ( 51 ) in the direction away from the associated carrier top ( 23 ) at least a part of the semiconductor chips ( 3 ) a conversion means ( 52 ) to an at least partial wavelength conversion of one of the associated semiconductor chip ( 3 ) emitted radiation downstream, and - the optical body ( 5 ) at least through the potting material ( 51 ) and the conversion agent ( 53 ) is formed. Optoelectronic semiconductor component ( 1 ) according to the preceding claim, in which between the potting material ( 51 ) and the conversion means ( 53 ) as a further component of the optic body ( 5 ) a layered, radiation-permeable scattering agent ( 52 ) to a scattering of the associated semiconductor chip ( 3 ) emitted radiation, wherein the scattering agent ( 52 ) the semiconductor chip ( 3 ) and the potting material ( 51 completely covered. Optoelectronic semiconductor component ( 1 ) according to claim 2 or 3, further comprising electrical lines ( 7 ), wherein a part of the electrical lines ( 7 ) between the potting material ( 51 ) and the conversion means ( 53 ) and the semiconductor chips ( 3 ) on the main radiation side ( 30 ), and wherein further electrical lines ( 7 ) between the carrier network ( 20 ) and the potting material ( 51 ) are located. Optoelectronic semiconductor component ( 1 ) according to one of claims 2 to 4, in which the shields ( 6 ) through the potting material ( 51 extend) and are formed of an electrically insulating material or coated with such a material, wherein the shields ( 6 ) each the associated semiconductor chip ( 3 ) surrounded like a frame, seen in plan view, and wherein the shields ( 6 ) are formed in a single piece and coherently. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims 2 to 5, in which all contact surfaces ( 4 ) on the same side of the carrier network ( 20 ) are like the semiconductor chips ( 3 ) and the shields ( 6 ) are not bordered, with all semiconductor chips ( 3 ) have a common ground contact (GND), and wherein the semiconductor device ( 1 ) is surface mountable. Optoelectronic semiconductor component ( 1 ) according to one of claims 1 to 5, in which all electrical contact points ( 4 ) on the at least one carrier underside ( 23 ), the carrier ( 2 ) or the carrier network ( 20 ) at least one electrical feedthrough ( 73 ). Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, in which at least one of the semiconductor chips ( 3 ) together with the associated optic body ( 5 ) for emitting blue light, at least one of the semiconductor chips ( 3 ) together with the associated optic body ( 5 ) for emitting green light and at least one of the semiconductor chips ( 3 ) together with the associated optic body ( 5 ) is arranged for the emission of red light, wherein the different colors at different locations of a light exit surface ( 10 ) of the semiconductor device ( 1 ) are emitted. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, comprising a plurality of the semiconductor chips ( 3 ), wherein an average distance between adjacent semiconductor chips ( 3 between 3% and 20% of a mean edge length of the semiconductor chips ( 3 ) is. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, in which all microcontrollers have a common supply voltage (Vcc), all microcontrollers being mounted on a common data line (Din) and the common data line (Din) being looped through the microcontrollers. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, comprising a plurality of the semiconductor chips ( 3 ), wherein the semiconductor chips ( 3 ) are arranged in a two-dimensional matrix, seen in plan view, and wherein the semiconductor chips ( 3 ) the associated carrier ( 2 ) Surpass at least in places, seen in plan view. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, in which the shielding ( 6 ), away from the carrier ( 2 ), flush with the optic body ( 5 ), wherein the shield ( 6 ), seen in plan view, not with the semiconductor chip ( 3 ) overlaps, and wherein the shield ( 6 ) neither the carrier ( 2 ) nor the semiconductor chip ( 3 ) touched. Method for producing optoelectronic semiconductor components ( 1 ) according to any one of the preceding claims, comprising the following steps: - providing a plurality of the carriers ( 2 ) and the semiconductor chips ( 3 ), - attaching the semiconductor chips ( 3 ) on the carrier tops ( 23 ), - electrical interconnection of the semiconductor chips ( 3 ) with the microcontrollers of the carriers ( 2 ), and - finishing the semiconductor components ( 1 ). Method according to the preceding claim, in which the provision of the supports ( 2 ) includes: - forming the two-dimensionally arranged carrier ( 2 ) with a carrier molding compound ( 28 ), so that the carriers ( 2 ) in a carrier composite ( 20 ) are mechanically integrated, and - forming printed conductors ( 7 ) on at least one side of the carrier network ( 20 ). The method of claim 14, wherein providing the semiconductor chips ( 3 ) includes: - forming the two-dimensionally arranged semiconductor chips ( 3 ) with a molding compound ( 38 ), so that the semiconductor chips ( 3 ) in a framework ( 33 ) are integrated mechanically, wherein subsequently the frame composite ( 33 ) on the carrier composite ( 20 ) so that the beams ( 2 ) the semiconductor chips ( 3 ) are uniquely assigned, and wherein the following with the carrier composite ( 20 ) interconnected framework ( 33 ) to the semiconductor components ( 1 ) is singulated so that the semiconductor components ( 1 ) one or more of the semiconductor chips ( 3 ) exhibit.

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