JP2018181904A - 加工方法 - Google Patents
加工方法 Download PDFInfo
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- JP2018181904A JP2018181904A JP2017074251A JP2017074251A JP2018181904A JP 2018181904 A JP2018181904 A JP 2018181904A JP 2017074251 A JP2017074251 A JP 2017074251A JP 2017074251 A JP2017074251 A JP 2017074251A JP 2018181904 A JP2018181904 A JP 2018181904A
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- Prior art keywords
- cutting
- workpiece
- laminate
- holding
- acid
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Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
11a 表面
11b 裏面
13 切断予定ライン(ストリート)
15 デバイス
17 積層体
19a エッチング溝
19b カーフ(切り口)
21 ダイシングテープ
23 フレーム
25 マスク材
2 切削装置
4 チャックテーブル(第2保持テーブル)
4a 保持面
6 クランプ
8 切削ユニット
10 切削ブレード
12 ノズル
14 切削液
16 ノズル(シャワーノズル)
22 ドライエッチング装置(プラズマエッチング装置)
24 真空チャンバ
24a 開口
24b 排気口
26 ゲート
28 排気ユニット
30 下部電極
32 高周波電源
34 静電チャック(第1保持テーブル)
36a,36b 電極
38a,38b 直流電源
40 上部電極
40a ガス噴出孔
40b ガス供給孔
42 ガス供給源
44 高周波電源
Claims (2)
- 金属を含む積層体が切断予定ラインに重ねて形成された板状の被加工物を加工する加工方法であって、
被加工物の該積層体側を第1保持テーブルで保持する第1保持ステップと、
該第1保持ステップを実施した後、該切断予定ラインを除く領域に設けられたマスク材を介して被加工物にドライエッチングを施すことで該切断予定ラインに沿って該積層体を残すようにエッチング溝を形成するドライエッチングステップと、
該ドライエッチングステップを実施した後、被加工物の該積層体側又は該積層体とは反対側を第2保持テーブルで保持する第2保持ステップと、
該第2保持ステップを実施した後、切削ブレードで該エッチング溝の底部を切削して被加工物を該積層体とともに該切断予定ラインに沿って切断する切削ステップと、を備え、
該切削ステップでは、被加工物に有機酸と酸化剤とを含む切削液を供給しつつ切削を遂行することを特徴とする加工方法。 - 該切削ステップでは、該エッチング溝の幅より厚みの薄い該切削ブレードを使用することを特徴とする請求項1に記載の加工方法。
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JP2017074251A JP6824581B2 (ja) | 2017-04-04 | 2017-04-04 | 加工方法 |
TW107107579A TWI733994B (zh) | 2017-04-04 | 2018-03-07 | 加工方法 |
SG10201802544PA SG10201802544PA (en) | 2017-04-04 | 2018-03-27 | Method of processing workpiece |
CN201810257275.1A CN108695246B (zh) | 2017-04-04 | 2018-03-27 | 加工方法 |
US15/937,441 US20180286690A1 (en) | 2017-04-04 | 2018-03-27 | Method of processing workpiece |
KR1020180036405A KR102475490B1 (ko) | 2017-04-04 | 2018-03-29 | 가공 방법 |
DE102018205026.0A DE102018205026A1 (de) | 2017-04-04 | 2018-04-04 | Bearbeitungsverfahren für ein werkstück |
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JP2017074251A JP6824581B2 (ja) | 2017-04-04 | 2017-04-04 | 加工方法 |
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US (1) | US20180286690A1 (ja) |
JP (1) | JP6824581B2 (ja) |
KR (1) | KR102475490B1 (ja) |
CN (1) | CN108695246B (ja) |
DE (1) | DE102018205026A1 (ja) |
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Cited By (1)
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JP2021027183A (ja) * | 2019-08-06 | 2021-02-22 | 株式会社ディスコ | チップの製造方法 |
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CN113990748B (zh) * | 2021-12-28 | 2022-08-30 | 江苏长晶浦联功率半导体有限公司 | 晶圆切割保护方法及具有切割保护环的晶圆 |
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- 2018-03-27 US US15/937,441 patent/US20180286690A1/en not_active Abandoned
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CN108695246B (zh) | 2023-08-15 |
DE102018205026A1 (de) | 2018-10-04 |
TWI733994B (zh) | 2021-07-21 |
SG10201802544PA (en) | 2018-11-29 |
JP6824581B2 (ja) | 2021-02-03 |
US20180286690A1 (en) | 2018-10-04 |
TW201838754A (zh) | 2018-11-01 |
CN108695246A (zh) | 2018-10-23 |
KR20180112688A (ko) | 2018-10-12 |
KR102475490B1 (ko) | 2022-12-07 |
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