CN108687978B - 加工方法 - Google Patents
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- CN108687978B CN108687978B CN201810261942.3A CN201810261942A CN108687978B CN 108687978 B CN108687978 B CN 108687978B CN 201810261942 A CN201810261942 A CN 201810261942A CN 108687978 B CN108687978 B CN 108687978B
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- 238000003672 processing method Methods 0.000 title claims abstract description 20
- 238000012545 processing Methods 0.000 claims abstract description 57
- 239000002173 cutting fluid Substances 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 150000007524 organic acids Chemical class 0.000 claims abstract description 17
- 239000007800 oxidant agent Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 238000003754 machining Methods 0.000 description 24
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 10
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- FFEARJCKVFRZRR-UHFFFAOYSA-N L-Methionine Natural products CSCCC(N)C(O)=O FFEARJCKVFRZRR-UHFFFAOYSA-N 0.000 description 7
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 7
- 229930195722 L-methionine Natural products 0.000 description 7
- 125000003277 amino group Chemical group 0.000 description 7
- 229960004452 methionine Drugs 0.000 description 7
- 125000001424 substituent group Chemical group 0.000 description 7
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 7
- PWKSKIMOESPYIA-UHFFFAOYSA-N 2-acetamido-3-sulfanylpropanoic acid Chemical compound CC(=O)NC(CS)C(O)=O PWKSKIMOESPYIA-UHFFFAOYSA-N 0.000 description 6
- 125000003368 amide group Chemical group 0.000 description 6
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 description 6
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 125000000565 sulfonamide group Chemical group 0.000 description 6
- 239000004471 Glycine Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 5
- 125000001399 1,2,3-triazolyl group Chemical class N1N=NC(=C1)* 0.000 description 4
- RHGKLRLOHDJJDR-BYPYZUCNSA-N L-citrulline Chemical compound NC(=O)NCCC[C@H]([NH3+])C([O-])=O RHGKLRLOHDJJDR-BYPYZUCNSA-N 0.000 description 4
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 4
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 4
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 4
- 229960002449 glycine Drugs 0.000 description 4
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ODKSFYDXXFIFQN-BYPYZUCNSA-N L-arginine Chemical compound OC(=O)[C@@H](N)CCCN=C(N)N ODKSFYDXXFIFQN-BYPYZUCNSA-N 0.000 description 3
- 229930064664 L-arginine Natural products 0.000 description 3
- 235000014852 L-arginine Nutrition 0.000 description 3
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 3
- 229930182816 L-glutamine Natural products 0.000 description 3
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 3
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 3
- 239000004472 Lysine Substances 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 108010077895 Sarcosine Proteins 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- RJURFGZVJUQBHK-UHFFFAOYSA-N actinomycin D Chemical compound CC1OC(=O)C(C(C)C)N(C)C(=O)CN(C)C(=O)C2CCCN2C(=O)C(C(C)C)NC(=O)C1NC(=O)C1=C(N)C(=O)C(C)=C2OC(C(C)=CC=C3C(=O)NC4C(=O)NC(C(N5CCCC5C(=O)N(C)CC(=O)N(C)C(C(C)C)C(=O)OC4C)=O)C(C)C)=C3N=C21 RJURFGZVJUQBHK-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 150000001735 carboxylic acids Chemical class 0.000 description 3
- 229960002743 glutamine Drugs 0.000 description 3
- 229960003646 lysine Drugs 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229960004441 tyrosine Drugs 0.000 description 3
- 125000001376 1,2,4-triazolyl group Chemical group N1N=C(N=C1)* 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- CKLJMWTZIZZHCS-UHFFFAOYSA-N D-OH-Asp Natural products OC(=O)C(N)CC(O)=O CKLJMWTZIZZHCS-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CKLJMWTZIZZHCS-UWTATZPHSA-N L-Aspartic acid Natural products OC(=O)[C@H](N)CC(O)=O CKLJMWTZIZZHCS-UWTATZPHSA-N 0.000 description 2
- AHLPHDHHMVZTML-BYPYZUCNSA-N L-Ornithine Chemical compound NCCC[C@H](N)C(O)=O AHLPHDHHMVZTML-BYPYZUCNSA-N 0.000 description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 2
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 2
- FSBIGDSBMBYOPN-VKHMYHEASA-N L-canavanine Chemical compound OC(=O)[C@@H](N)CCONC(N)=N FSBIGDSBMBYOPN-VKHMYHEASA-N 0.000 description 2
- LEVWYRKDKASIDU-IMJSIDKUSA-N L-cystine Chemical compound [O-]C(=O)[C@@H]([NH3+])CSSC[C@H]([NH3+])C([O-])=O LEVWYRKDKASIDU-IMJSIDKUSA-N 0.000 description 2
- 239000004158 L-cystine Substances 0.000 description 2
- 235000019393 L-cystine Nutrition 0.000 description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 2
- UKAUYVFTDYCKQA-VKHMYHEASA-N L-homoserine Chemical compound OC(=O)[C@@H](N)CCO UKAUYVFTDYCKQA-VKHMYHEASA-N 0.000 description 2
- 229930182821 L-proline Natural products 0.000 description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 2
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 2
- 239000004473 Threonine Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 229960005261 aspartic acid Drugs 0.000 description 2
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229960002173 citrulline Drugs 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229960003067 cystine Drugs 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- YSMODUONRAFBET-UHNVWZDZSA-N erythro-5-hydroxy-L-lysine Chemical compound NC[C@H](O)CC[C@H](N)C(O)=O YSMODUONRAFBET-UHNVWZDZSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 2
- YMAWOPBAYDPSLA-UHFFFAOYSA-N glycylglycine Chemical compound [NH3+]CC(=O)NCC([O-])=O YMAWOPBAYDPSLA-UHFFFAOYSA-N 0.000 description 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 229960002885 histidine Drugs 0.000 description 2
- 229960003136 leucine Drugs 0.000 description 2
- 235000018977 lysine Nutrition 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229960002429 proline Drugs 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229960001153 serine Drugs 0.000 description 2
- IFGCUJZIWBUILZ-UHFFFAOYSA-N sodium 2-[[2-[[hydroxy-(3,4,5-trihydroxy-6-methyloxan-2-yl)oxyphosphoryl]amino]-4-methylpentanoyl]amino]-3-(1H-indol-3-yl)propanoic acid Chemical compound [Na+].C=1NC2=CC=CC=C2C=1CC(C(O)=O)NC(=O)C(CC(C)C)NP(O)(=O)OC1OC(C)C(O)C(O)C1O IFGCUJZIWBUILZ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- 125000003831 tetrazolyl group Chemical group 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- 229960002898 threonine Drugs 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- AINPCLWBWFSAQV-BYPYZUCNSA-N (2s)-2-(2-carboxyethylamino)butanedioic acid Chemical compound OC(=O)CCN[C@H](C(O)=O)CC(O)=O AINPCLWBWFSAQV-BYPYZUCNSA-N 0.000 description 1
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 description 1
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 1
- YGPSJZOEDVAXAB-UHFFFAOYSA-N (R)-Kynurenine Natural products OC(=O)C(N)CC(=O)C1=CC=CC=C1N YGPSJZOEDVAXAB-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- AGNGYMCLFWQVGX-AGFFZDDWSA-N (e)-1-[(2s)-2-amino-2-carboxyethoxy]-2-diazonioethenolate Chemical compound OC(=O)[C@@H](N)CO\C([O-])=C\[N+]#N AGNGYMCLFWQVGX-AGFFZDDWSA-N 0.000 description 1
- UKAUYVFTDYCKQA-UHFFFAOYSA-N -2-Amino-4-hydroxybutanoic acid Natural products OC(=O)C(N)CCO UKAUYVFTDYCKQA-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 description 1
- QDGAVODICPCDMU-UHFFFAOYSA-N 2-amino-3-[3-[bis(2-chloroethyl)amino]phenyl]propanoic acid Chemical compound OC(=O)C(N)CC1=CC=CC(N(CCCl)CCCl)=C1 QDGAVODICPCDMU-UHFFFAOYSA-N 0.000 description 1
- 125000006290 2-hydroxybenzyl group Chemical group [H]OC1=C(C([H])=C([H])C([H])=C1[H])C([H])([H])* 0.000 description 1
- NYPYHUZRZVSYKL-ZETCQYMHSA-N 3,5-diiodo-L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC(I)=C(O)C(I)=C1 NYPYHUZRZVSYKL-ZETCQYMHSA-N 0.000 description 1
- UWRBFYBQPCJRRL-UHFFFAOYSA-N 3-[bis(carboxymethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CC(O)=O)CC(O)=O UWRBFYBQPCJRRL-UHFFFAOYSA-N 0.000 description 1
- LHJHVQBQEUCDEX-UHFFFAOYSA-N 3-amino-3-methyliminopropanoic acid Chemical compound CN=C(N)CC(O)=O LHJHVQBQEUCDEX-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N Acetoacetic acid Natural products CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 1
- 102000005862 Angiotensin II Human genes 0.000 description 1
- 101800000734 Angiotensin-1 Proteins 0.000 description 1
- 102400000344 Angiotensin-1 Human genes 0.000 description 1
- 101800000733 Angiotensin-2 Proteins 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical class [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 1
- QNAYBMKLOCPYGJ-UHFFFAOYSA-N D-alpha-Ala Natural products CC([NH3+])C([O-])=O QNAYBMKLOCPYGJ-UHFFFAOYSA-N 0.000 description 1
- ILRYLPWNYFXEMH-UHFFFAOYSA-N D-cystathionine Natural products OC(=O)C(N)CCSCC(N)C(O)=O ILRYLPWNYFXEMH-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical class [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- 108010008488 Glycylglycine Proteins 0.000 description 1
- XSISQURPIRTMAY-UHFFFAOYSA-N Hydroxyethyl glycine Chemical compound NCC(=O)OCCO XSISQURPIRTMAY-UHFFFAOYSA-N 0.000 description 1
- PMMYEEVYMWASQN-DMTCNVIQSA-N Hydroxyproline Chemical compound O[C@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-DMTCNVIQSA-N 0.000 description 1
- CZGUSIXMZVURDU-JZXHSEFVSA-N Ile(5)-angiotensin II Chemical compound C([C@@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC=1C=CC=CC=1)C([O-])=O)NC(=O)[C@@H](NC(=O)[C@H](CCCNC(N)=[NH2+])NC(=O)[C@@H]([NH3+])CC([O-])=O)C(C)C)C1=CC=C(O)C=C1 CZGUSIXMZVURDU-JZXHSEFVSA-N 0.000 description 1
- SNDPXSYFESPGGJ-BYPYZUCNSA-N L-2-aminopentanoic acid Chemical compound CCC[C@H](N)C(O)=O SNDPXSYFESPGGJ-BYPYZUCNSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-UWTATZPHSA-N L-Alanine Natural products C[C@@H](N)C(O)=O QNAYBMKLOCPYGJ-UWTATZPHSA-N 0.000 description 1
- WTDRDQBEARUVNC-LURJTMIESA-N L-DOPA Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-LURJTMIESA-N 0.000 description 1
- 235000019766 L-Lysine Nutrition 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- AGPKZVBTJJNPAG-UHNVWZDZSA-N L-allo-Isoleucine Chemical compound CC[C@@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-UHNVWZDZSA-N 0.000 description 1
- AYFVYJQAPQTCCC-HRFVKAFMSA-N L-allothreonine Chemical compound C[C@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-HRFVKAFMSA-N 0.000 description 1
- QWCKQJZIFLGMSD-VKHMYHEASA-N L-alpha-aminobutyric acid Chemical compound CC[C@H](N)C(O)=O QWCKQJZIFLGMSD-VKHMYHEASA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- ILRYLPWNYFXEMH-WHFBIAKZSA-N L-cystathionine Chemical compound [O-]C(=O)[C@@H]([NH3+])CCSC[C@H]([NH3+])C([O-])=O ILRYLPWNYFXEMH-WHFBIAKZSA-N 0.000 description 1
- XVOYSCVBGLVSOL-UHFFFAOYSA-N L-cysteine sulfonic acid Natural products OC(=O)C(N)CS(O)(=O)=O XVOYSCVBGLVSOL-UHFFFAOYSA-N 0.000 description 1
- SSISHJJTAXXQAX-ZETCQYMHSA-N L-ergothioneine Chemical compound C[N+](C)(C)[C@H](C([O-])=O)CC1=CNC(=S)N1 SSISHJJTAXXQAX-ZETCQYMHSA-N 0.000 description 1
- GGLZPLKKBSSKCX-YFKPBYRVSA-N L-ethionine Chemical compound CCSCC[C@H](N)C(O)=O GGLZPLKKBSSKCX-YFKPBYRVSA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- 229930182844 L-isoleucine Natural products 0.000 description 1
- YGPSJZOEDVAXAB-QMMMGPOBSA-N L-kynurenine Chemical compound OC(=O)[C@@H](N)CC(=O)C1=CC=CC=C1N YGPSJZOEDVAXAB-QMMMGPOBSA-N 0.000 description 1
- DWPCPZJAHOETAG-IMJSIDKUSA-N L-lanthionine Chemical compound OC(=O)[C@@H](N)CSC[C@H](N)C(O)=O DWPCPZJAHOETAG-IMJSIDKUSA-N 0.000 description 1
- 239000004395 L-leucine Substances 0.000 description 1
- 235000019454 L-leucine Nutrition 0.000 description 1
- SNDPXSYFESPGGJ-UHFFFAOYSA-N L-norVal-OH Natural products CCCC(N)C(O)=O SNDPXSYFESPGGJ-UHFFFAOYSA-N 0.000 description 1
- LRQKBLKVPFOOQJ-YFKPBYRVSA-N L-norleucine Chemical compound CCCC[C@H]([NH3+])C([O-])=O LRQKBLKVPFOOQJ-YFKPBYRVSA-N 0.000 description 1
- XUIIKFGFIJCVMT-LBPRGKRZSA-N L-thyroxine Chemical compound IC1=CC(C[C@H]([NH3+])C([O-])=O)=CC(I)=C1OC1=CC(I)=C(O)C(I)=C1 XUIIKFGFIJCVMT-LBPRGKRZSA-N 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- JDHILDINMRGULE-LURJTMIESA-N N(pros)-methyl-L-histidine Chemical compound CN1C=NC=C1C[C@H](N)C(O)=O JDHILDINMRGULE-LURJTMIESA-N 0.000 description 1
- BRMWTNUJHUMWMS-LURJTMIESA-N N(tele)-methyl-L-histidine Chemical compound CN1C=NC(C[C@H](N)C(O)=O)=C1 BRMWTNUJHUMWMS-LURJTMIESA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- JYXGIOKAKDAARW-UHFFFAOYSA-N N-(2-hydroxyethyl)iminodiacetic acid Chemical compound OCCN(CC(O)=O)CC(O)=O JYXGIOKAKDAARW-UHFFFAOYSA-N 0.000 description 1
- FOUZISDNESEYLX-UHFFFAOYSA-N N-hydroxyethyl glycine Natural products OCCNCC(O)=O FOUZISDNESEYLX-UHFFFAOYSA-N 0.000 description 1
- FSBIGDSBMBYOPN-UHFFFAOYSA-N O-guanidino-DL-homoserine Natural products OC(=O)C(N)CCON=C(N)N FSBIGDSBMBYOPN-UHFFFAOYSA-N 0.000 description 1
- AHLPHDHHMVZTML-UHFFFAOYSA-N Orn-delta-NH2 Natural products NCCCC(N)C(O)=O AHLPHDHHMVZTML-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- GBFLZEXEOZUWRN-VKHMYHEASA-N S-carboxymethyl-L-cysteine Chemical compound OC(=O)[C@@H](N)CSCC(O)=O GBFLZEXEOZUWRN-VKHMYHEASA-N 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- AYFVYJQAPQTCCC-UHFFFAOYSA-N Threonine Natural products CC(O)C(N)C(O)=O AYFVYJQAPQTCCC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XYDQMRVDDPZFMM-UHFFFAOYSA-N [Ag+2] Chemical class [Ag+2] XYDQMRVDDPZFMM-UHFFFAOYSA-N 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229940091181 aconitic acid Drugs 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229960003767 alanine Drugs 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229940024606 amino acid Drugs 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- ORWYRWWVDCYOMK-HBZPZAIKSA-N angiotensin I Chemical compound C([C@@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N[C@@H](CC(C)C)C(O)=O)NC(=O)[C@@H](NC(=O)[C@H](CCCN=C(N)N)NC(=O)[C@@H](N)CC(O)=O)C(C)C)C1=CC=C(O)C=C1 ORWYRWWVDCYOMK-HBZPZAIKSA-N 0.000 description 1
- 229950006323 angiotensin ii Drugs 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 235000009697 arginine Nutrition 0.000 description 1
- 229960003121 arginine Drugs 0.000 description 1
- -1 aromatic ring compound Chemical class 0.000 description 1
- 229960001230 asparagine Drugs 0.000 description 1
- 229950011321 azaserine Drugs 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 150000001559 benzoic acids Chemical class 0.000 description 1
- 229940000635 beta-alanine Drugs 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229940106681 chloroacetic acid Drugs 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical class OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 229940018557 citraconic acid Drugs 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- WOWBFOBYOAGEEA-UHFFFAOYSA-N diafenthiuron Chemical compound CC(C)C1=C(NC(=S)NC(C)(C)C)C(C(C)C)=CC(OC=2C=CC=CC=2)=C1 WOWBFOBYOAGEEA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 229940093497 ergothioneine Drugs 0.000 description 1
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 1
- IFQUWYZCAGRUJN-UHFFFAOYSA-N ethylenediaminediacetic acid Chemical compound OC(=O)CNCCNCC(O)=O IFQUWYZCAGRUJN-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 1
- 229960002989 glutamic acid Drugs 0.000 description 1
- 229940043257 glycylglycine Drugs 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229960002591 hydroxyproline Drugs 0.000 description 1
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical class Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- 229950008325 levothyroxine Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 108010089057 melimine Proteins 0.000 description 1
- HNEGQIOMVPPMNR-NSCUHMNNSA-N mesaconic acid Chemical compound OC(=O)C(/C)=C/C(O)=O HNEGQIOMVPPMNR-NSCUHMNNSA-N 0.000 description 1
- DWPCPZJAHOETAG-UHFFFAOYSA-N meso-lanthionine Natural products OC(=O)C(N)CSCC(N)C(O)=O DWPCPZJAHOETAG-UHFFFAOYSA-N 0.000 description 1
- HNEGQIOMVPPMNR-UHFFFAOYSA-N methylfumaric acid Natural products OC(=O)C(C)=CC(O)=O HNEGQIOMVPPMNR-UHFFFAOYSA-N 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 150000005209 naphthoic acids Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 description 1
- 229960003104 ornithine Drugs 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 150000003022 phthalic acids Chemical class 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- GJPYYNMJTJNYTO-UHFFFAOYSA-J sodium aluminium sulfate Chemical compound [Na+].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O GJPYYNMJTJNYTO-UHFFFAOYSA-J 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WPLOVIFNBMNBPD-ATHMIXSHSA-N subtilin Chemical compound CC1SCC(NC2=O)C(=O)NC(CC(N)=O)C(=O)NC(C(=O)NC(CCCCN)C(=O)NC(C(C)CC)C(=O)NC(=C)C(=O)NC(CCCCN)C(O)=O)CSC(C)C2NC(=O)C(CC(C)C)NC(=O)C1NC(=O)C(CCC(N)=O)NC(=O)C(CC(C)C)NC(=O)C(NC(=O)C1NC(=O)C(=C/C)/NC(=O)C(CCC(N)=O)NC(=O)C(CC(C)C)NC(=O)C(C)NC(=O)CNC(=O)C(NC(=O)C(NC(=O)C2NC(=O)CNC(=O)C3CCCN3C(=O)C(NC(=O)C3NC(=O)C(CC(C)C)NC(=O)C(=C)NC(=O)C(CCC(O)=O)NC(=O)C(NC(=O)C(CCCCN)NC(=O)C(N)CC=4C5=CC=CC=C5NC=4)CSC3)C(C)SC2)C(C)C)C(C)SC1)CC1=CC=CC=C1 WPLOVIFNBMNBPD-ATHMIXSHSA-N 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 235000002374 tyrosine Nutrition 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229960004295 valine Drugs 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical class [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
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Abstract
本发明提供一种加工方法,该加工方法在对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工时,能够在维持加工品质的同时提高加工速度。该加工方法对板状的被加工物进行加工,该板状的被加工物在背面侧形成有包含金属的层叠体,该加工方法包括下述步骤:保持步骤,利用保持工作台对被加工物的表面侧进行保持,使层叠体露出;切削步骤,在实施保持步骤后,利用切削刀具沿着切断预定线对被加工物进行切削,形成分割层叠体的切削槽;和激光加工步骤,在实施切削步骤后,沿着切削槽照射激光束,在切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削。
Description
技术领域
本发明涉及用于对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工的加工方法。
背景技术
在以移动电话、个人计算机为代表的电子设备中,具备电子电路等器件的器件芯片成为了必要的构成要素。器件芯片例如如下得到:利用两条以上的切断预定线(间隔道)对由硅等半导体材料形成的晶片的表面进行划分,在各区域形成器件后,沿着该切断预定线将晶片切断,由此得到器件芯片。
近年来,大多在上述那样的晶片的切断预定线上配置被称为TEG(Test ElementsGroup,测试元件组)的评价用元件(参见例如专利文献1、2等),用于评价器件的电特性。通过在切断预定线上配置TEG,能够最大限度地确保器件芯片的取得数,并且能够与晶片的切断同时除去评价后不需要的TEG。
现有技术文献
专利文献
专利文献1:日本特开平6-349926号公报
专利文献2:日本特开2005-21940号公报
发明内容
发明所要解决的课题
但是,若要利用磨粒分散于结合材料中而成的切削刀具对TEG之类的包含金属的层叠体进行切削、除去,则层叠体所含的金属在切削时伸长,容易产生被称为毛刺的突起。并且,若利用切削刀具进行的加工的速度提高,放热量增加,则毛刺也容易变大。因此,在该方法中,为了不使加工品质降低,需要将加工速度抑制得较低。
本发明是鉴于上述问题而完成的,其目的在于提供一种加工方法,该加工方法在对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工时,能够在维持加工品质的同时提高加工速度。
用于解决课题的手段
根据本发明的一个方式,提供一种加工方法,该加工方法对板状的被加工物进行加工,该板状的被加工物在背面侧形成有包含金属的层叠体,该加工方法具备下述步骤:保持步骤,利用保持工作台对被加工物的表面侧进行保持,使该层叠体露出;切削步骤,在实施该保持步骤后,利用切削刀具沿着切断预定线对被加工物进行切削,形成分割该层叠体的切削槽;和激光加工步骤,在实施该切削步骤后,沿着该切削槽照射激光束,在该切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削。
在上述本发明的一个方式中,也可以是,在该激光加工步骤中,照射对被加工物具有吸收性的波长的激光束,沿着该切断预定线在厚度方向上将被加工物切断。
另外,在上述本发明的一个方式中,也可以是,在该激光加工步骤中,照射对被加工物具有透过性的波长的激光束,在被加工物中形成沿着该切削槽的改性层,在实施该激光加工步骤后,进一步具备分割步骤,沿着该改性层对被加工物进行分割。
另外,在上述本发明的一个方式中,也可以是,在该激光加工步骤中,对被加工物的该背面照射激光束,并且在实施该激光加工步骤之前,进一步具备片材粘贴步骤,在被加工物的该表面粘贴片材。
发明效果
在本发明的一个方式的加工方法中,形成分割包含金属的层叠体的切削槽时,供给包含有机酸和氧化剂的切削液,因此能够一边利用有机酸和氧化剂对金属进行改性而使其延展性降低,一边执行切削。由此,即便提高加工的速度,也能抑制毛刺的产生。即,在维持加工品质的同时提高加工速度。
附图说明
图1的(A)是示意性地示出被加工物的结构例的立体图,图1的(B)是用于说明片材粘贴步骤的立体图。
图2的(A)是用于说明第一保持步骤的局部截面侧视图,图2的(B)是用于说明切削步骤的局部截面侧视图。
图3的(A)是用于说明第二保持步骤的局部截面侧视图,图3的(B)是用于说明激光加工步骤的局部截面侧视图。
图4是用于说明变形例的激光加工步骤的局部截面侧视图。
图5的(A)和图5的(B)是用于说明分割步骤的局部截面侧视图。
图6是示出用于供给切削液的其它方式的喷嘴的侧视图。
具体实施方式
参照附图,对本发明的一个方式的实施方式进行说明。本实施方式的加工方法是用于对板状的被加工物进行加工的加工方法,该板状的被加工物在背面侧形成有包含金属的层叠体,该加工方法包括片材粘贴步骤(参照图1的(B))、第一保持步骤(参照图2的(A))、切削步骤(参照图2的(B))、第二保持步骤(参照图3的(A))以及激光加工步骤(参照图3的(B))。
在片材粘贴步骤中,在背面侧具有层叠体的被加工物的表面粘贴片材(保护部件)。在第一保持步骤中,以层叠体露出的方式,利用切削装置的卡盘工作台(第一保持工作台)对被加工物的表面侧进行保持。在切削步骤中,一边供给包含有机酸和氧化剂的切削液,一边沿着切断预定线对被加工物进行切削,形成分割层叠体的切削槽。
在第二保持步骤中,利用激光加工装置的卡盘工作台(第二保持工作台)对被加工物的表面侧进行保持。在激光加工步骤中,从被加工物的背面侧照射激光束,沿着切断预定线将被加工物切断。下面,对本实施方式的加工方法进行详细说明。
图1的(A)是示意性地示出利用本实施方式的加工方法进行加工的被加工物11的结构例的立体图。如图1的(A)所示,本实施方式的被加工物11是使用硅(Si)等半导体材料呈圆盘状地形成的晶片,其表面11a侧被分成中央的器件区域、和包围器件区域的外周剩余区域。
器件区域被呈格子状排列的切断预定线(间隔道)13进一步划分成两个以上的区域,在各区域形成有IC(Integrated Circuit,集成电路)等器件15。另外,在被加工物11的背面11b侧设置有包含金属的层叠体17。该层叠体17例如为由钛(Ti)、镍(Ni)、金(Au)等形成的厚度为几μm左右的多层金属膜,其作为电极等发挥功能。该层叠体17也形成于与切断预定线13重叠的区域。
需要说明的是,在本实施方式中,将由硅等半导体材料形成的圆盘状的晶片作为被加工物11,但对于被加工物11的材质、形状、结构、尺寸等没有限制。同样地,对于器件15或层叠体17的种类、数量、形状、结构、尺寸、配置等也没有限制。例如,也可以使用沿着切断预定线13形成有作为电极发挥功能的层叠体17的封装基板等来作为被加工物11。
在本实施方式的加工方法中,首先,进行片材粘贴步骤,在上述被加工物11的表面11a粘贴片材(保护部件)。图1的(B)是用于说明片材粘贴步骤的立体图。如图1的(B)所示,在片材粘贴步骤中,将直径大于被加工物11的树脂制的片材(保护部件)21粘贴至被加工物11的表面侧11a。另外,将环状的框架23固定于片材21的外周部分。
由此,被加工物11借助片材21而被支承于环状的框架23。需要说明的是,在本实施方式中,以对借助片材21而被支承于环状的框架23的状态的被加工物11进行加工为例进行说明,但也可以不使用片材21、框架23而对被加工物11进行加工。该情况下,省略片材粘贴步骤。另外,也可以代替树脂制的片材21,而将与被加工物11等同的晶片或其它基板等作为保护部件粘贴至被加工物11。
在片材粘贴步骤之后,进行第一保持步骤,利用切削装置的卡盘工作台(第一保持工作台)对被加工物11进行保持。图2的(A)是用于说明第一保持步骤的局部截面侧视图。第一保持步骤例如使用图2的(A)所示的切削装置2来进行。切削装置2具备用于吸引、保持被加工物11的卡盘工作台(第一保持工作台)4。
卡盘工作台4与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴旋转。另外,在卡盘工作台4的下方设置有加工进给机构(未图示),卡盘工作台4通过该加工进给机构在加工进给方向(第一水平方向)上移动。
卡盘工作台4的上表面的一部分成为用于吸引、保持被加工物11(片材21)的保持面4a。保持面4a通过形成于卡盘工作台4的内部的吸引路(未图示)等与吸引源(未图示)连接。通过使吸引源的负压作用于保持面4a,被加工物11被吸引、保持于卡盘工作台4。在该卡盘工作台4的周围设置有用于固定环状的框架23的两个以上的夹具6。
在第一保持步骤中,首先,使粘贴于被加工物11的表面11a侧的片材21与卡盘工作台4的保持面4a接触,并作用吸引源的负压。并且,利用夹具6固定框架23。由此,被加工物11以背面11b侧的层叠体17向上方露出的状态被保持。
在第一保持步骤之后,进行切削步骤,形成分割层叠体17的切削槽。图2的(B)是用于说明切削步骤的局部截面侧视图。切削步骤继续使用切削装置2来进行。如图2的(B)所示,切削装置2进一步具备配置于卡盘工作台4的上方的切削单元8。
切削单元8具备与加工进给方向大致垂直的作为旋转轴的主轴(未图示)。在主轴的一端侧安装有磨粒分散于结合材料中而成的环状的切削刀具10。在主轴的另一端侧连结有电动机等旋转驱动源(未图示),安装于主轴的一端侧的切削刀具10通过从该旋转驱动源传递的力而旋转。
另外,主轴由移动机构(未图示)支承。切削刀具10通过该移动机构在与加工进给方向垂直的分度进给方向(第二水平方向)以及铅垂方向上移动。在切削刀具10的侧方以夹持切削刀具10的方式配置有一对喷嘴12。喷嘴12构成为能够对切削刀具10、被加工物11供给切削液14。
在切削步骤中,首先使卡盘工作台4旋转,使作为对象的切断预定线13的延伸方向与切削装置2的加工进给方向对齐。并且,使卡盘工作台4和切削单元8相对地移动,使切削刀具10的位置对齐在作为对象的切断预定线13的延长线上。然后,使切削刀具10的下端移动至低于层叠体17的下表面的位置。需要说明的是,例如,通过使用对红外线具有灵敏度的照相机等,能够从背面11b侧确认切断预定线13的位置。
然后,一边使切削刀具10旋转一边使卡盘工作台4在加工进给方向上移动。并且,从喷嘴12对切削刀具10和被加工物11供给包含有机酸和氧化剂的切削液14。由此,能够使切削刀具10沿着对象的切断预定线13切入,在被加工物11的背面11b侧形成分割层叠体17的切削槽19a。
如本实施方式那样,通过使切削液14包含有机酸,能够对层叠体17中的金属进行改性而抑制其延展性。另外,通过使切削液14包含氧化剂,层叠体17中的金属的表面容易发生氧化。其结果是,可充分降低层叠体17中的金属的延展性,提高加工性。
作为切削液14所含的有机酸,可以使用例如在分子内具有至少1个羧基和至少1个氨基的化合物。这种情况下,优选氨基中的至少1个为仲氨基或叔氨基。另外,作为有机酸使用的化合物可以具有取代基。
作为可用作有机酸的氨基酸,可以举出甘氨酸、二羟基乙基甘氨酸、双甘氨肽、羟基乙基甘氨酸、N-甲基甘氨酸、β-丙氨酸、L-丙氨酸、L-2-氨基丁酸、L-正缬氨酸、L-缬氨酸、L-亮氨酸、L-正亮氨酸、L-别异亮氨酸、L-异亮氨酸、L-苯丙氨酸、L-脯氨酸、肌氨酸、L-鸟氨酸、L-赖氨酸、牛磺酸、L-丝氨酸、L-苏氨酸、L-别苏氨酸、L-高丝氨酸、L-甲状腺素、L-酪氨酸、3,5-二碘-L-酪氨酸、β-(3,4-二羟基苯基)-L-丙氨酸、4-羟基-L-脯氨酸、L-半胱氨酸、L-甲硫氨酸、L-乙硫氨酸、L-羊毛硫氨酸、L-胱硫醚、L-胱氨酸、L-磺基丙氨酸、L-谷氨酸、L-天冬氨酸、S-(羧甲基)-L-半胱氨酸、4-氨基丁酸、L-天冬酰胺、L-谷氨酰胺、氮杂丝氨酸、L-刀豆氨酸、L-瓜氨酸、L-精氨酸、δ-羟基-L-赖氨酸、甲胍基乙酸、L-犬尿氨素、L-组氨酸、1-甲基-L-组氨酸、3-甲基-L-组氨酸、L-色氨酸、放线菌素C1、麦角硫因、蜂毒明肽、血管紧张素I、血管紧张素II和抗痛素等。其中,优选甘氨酸、L-丙氨酸、L-脯氨酸、L-组氨酸、L-赖氨酸、二羟基乙基甘氨酸。
另外,作为可用作有机酸的氨基多元酸,可以举出亚氨基二乙酸、次氮基三乙酸、二亚乙基三胺五乙酸、乙二胺四乙酸、羟基乙基亚氨基二乙酸、次氮基三亚甲基膦酸、乙二胺-N,N,N’,N’-四亚甲基磺酸、1,2-二氨基丙烷四乙酸、乙二醇醚二胺四乙酸、反式环己烷二胺四乙酸、乙二胺邻羟基苯基乙酸、乙二胺二琥珀酸(SS体)、β-丙氨酸二乙酸、N-(2-羧酸乙基)-L-天冬氨酸、N,N’-双(2-羟基苄基)乙二胺-N,N’-二乙酸等。
此外,作为可用作有机酸的羧酸,可以举出甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、苹果酸、琥珀酸、庚二酸、巯基乙酸、乙醛酸、氯乙酸、乙酰甲酸、乙酰乙酸、戊二酸等饱和羧酸;丙烯酸、甲基丙烯酸、丁烯酸、富马酸、马来酸、中康酸、柠康酸、乌头酸等不饱和羧酸;苯甲酸类、甲基苯甲酸、邻苯二甲酸类、萘甲酸类、均苯四甲酸、萘二酸等环状不饱和羧酸等。
作为切削液14所含的氧化剂,可以使用例如过氧化氢、过氧化物、硝酸盐、碘酸盐、高碘酸盐、次氯酸盐、亚氯酸盐、氯酸盐、高氯酸盐、过硫酸盐、重铬酸盐、高锰酸盐、铈酸盐、钒酸盐、臭氧水和银(II)盐、铁(III)盐及其有机络盐等。
另外,可以在切削液14中混合防蚀剂。通过混合防蚀剂,能够防止被加工物11所含的金属的腐蚀(溶出)。作为防蚀剂,优选使用例如在分子内具有3个以上氮原子且具有稠环结构的芳杂环化合物、或者在分子内具有4个以上氮原子的芳杂环化合物。此外,芳香环化合物优选包含羧基、磺基、羟基、烷氧基。具体而言,优选为四唑衍生物、1,2,3-三唑衍生物以及1,2,4-三唑衍生物。
作为可用作防蚀剂的四唑衍生物,可以举出:在形成四唑环的氮原子上不具有取代基并且在四唑的5位上导入有选自由磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基的物质。
另外,作为可用作防蚀剂的1,2,3-三唑衍生物,可以举出在形成1,2,3-三唑环的氮原子上不具有取代基并且在1,2,3-三唑的4位和/或5位上导入有选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基或芳基的物质。
另外,作为可用作防蚀剂的1,2,4-三唑衍生物,可以举出在形成1,2,4-三唑环的氮原子上不具有取代基并且在1,2,4-三唑的2位和/或5位上导入有选自由磺基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基或芳基的物质。
重复上述步骤,若沿着全部切断预定线13形成切削槽19a,则切削步骤结束。在本实施方式中,一边向被加工物11供给包含有机酸和氧化剂的切削液14一边执行切削,因此能够一边对层叠体17所含的金属进行改性而使其延展性降低,一边执行切削。由此,即便提高加工的速度,也能抑制毛刺的产生。
在切削步骤之后,进行第二保持步骤,利用激光加工装置的卡盘工作台(第二保持工作台)对被加工物11进行保持。图3的(A)是用于说明第二保持步骤的局部截面侧视图。第二保持步骤例如使用图3的(A)所示的激光加工装置22来进行。激光加工装置22具备用于吸引、保持被加工物11的卡盘工作台(第二保持工作台)24。
卡盘工作台24与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴旋转。另外,在卡盘工作台24的下方设置有移动机构(未图示),卡盘工作台24通过该移动机构在加工进给方向(第一水平方向)和分度进给方向(第二水平方向)上移动。
卡盘工作台24的上表面的一部分成为用于吸引、保持被加工物11(片材21)的保持面24a。保持面24a通过形成于卡盘工作台24的内部的吸引路(未图示)等与吸引源(未图示)连接。通过使吸引源的负压作用于保持面24a,被加工物11被吸引、保持于卡盘工作台24。在该卡盘工作台24的周围设置有用于固定环状的框架23的两个以上的夹具26。
在第二保持步骤中,首先,使粘贴于被加工物11的表面11a侧的片材21与卡盘工作台24的保持面24a接触,并作用吸引源的负压。并且,利用夹具26固定框架23。由此,被加工物11以背面11b侧的层叠体17向上方露出的状态被保持。
在第二保持步骤之后,进行激光加工步骤,从被加工物11的背面11b侧照射激光束,沿着切断预定线13将被加工物11切断。激光加工步骤继续使用激光加工装置22来进行。图3的(B)是用于说明激光加工步骤的局部截面侧视图。如图3的(B)所示,激光加工装置22进一步具备配置于卡盘工作台24的上方的激光照射单元28。
激光照射单元28将利用激光振荡器(未图示)脉冲振荡出的激光束28a照射、会聚到规定的位置。激光振荡器构成为能够脉冲振荡出能被被加工物11吸收的波长(对被加工物11具有吸收性的波长、容易被吸收的波长)的激光束28a。
在激光加工步骤中,首先使卡盘工作台24旋转,使作为对象的切削槽19a(即,切断预定线13)的延伸方向与激光加工装置22的加工进给方向对齐。并且,使卡盘工作台24移动,使激光照射单元28的位置对齐在作为对象的切削槽19a的延长线上。
然后,如图3的(B)所示,一边从激光照射单元28朝向被加工物11的背面11b侧照射激光束28a,一边使卡盘工作台24在加工进给方向上移动。此处,例如使激光束28a会聚到切削槽19a的底部、或被加工物11的表面11a、内部等。
由此,能够沿着作为对象的切削槽19a照射激光束28a,形成在厚度方向切断被加工物11的切缝(切口)19b。重复上述操作,例如,若沿着全部切削槽19a形成切缝19b,被加工物11被分割成两个以上的芯片,则激光加工步骤结束。
如上所述,在本实施方式的加工方法中,在形成分割包含金属的层叠体17的切削槽19a时,供给包含有机酸和氧化剂的切削液14,因此能够一边利用有机酸和氧化剂对金属进行改性而使其延展性降低,一边执行切削。由此,即便提高加工的速度,也能抑制毛刺的产生。即,能够在维持加工品质的同时提高加工速度。
需要说明的是,本发明不限于上述实施方式的记载,可以进行各种变更来实施。例如,在上述实施方式的激光加工步骤中,通过使用了能被被加工物11吸收的波长的激光束28a的烧蚀加工来切断被加工物11,但也可以利用其它方法对被加工物11进行加工。
图4是用于说明变形例的激光加工步骤的局部截面侧视图。如图4所示,变形例的激光加工步骤使用与上述实施方式同样的激光加工装置22来进行。其中,变形例的激光加工步骤的激光照射单元28构成为能够将透过被加工物11的波长(对被加工物11具有透过性的波长、难以被吸收的波长)的激光束28b照射、会聚到规定的位置。
在变形例的激光加工步骤中,首先使卡盘工作台24旋转,使作为对象的切削槽19a(即,切断预定线13)的延伸方向与激光加工装置22的加工进给方向对齐。并且,使卡盘工作台24移动,使激光照射单元28的位置对齐在作为对象的切削槽19a的延长线上。
另外,如图5的(B)所示,一边从激光照射单元28朝向被加工物11的背面11b侧照射激光束28b,一边使卡盘工作台24在加工进给方向上移动。此处,例如使激光束28b会聚到被加工物11的内部。
由此,能够沿着作为对象的切削槽19a照射透过被加工物11的波长的激光束28b,通过多光子吸收对被加工物11的内部进行改性。其结果是,在被加工物11的内部,沿着切削槽19a形成成为分割起点的改性层19c。
重复上述操作,若沿着全部切断预定线13形成改性层19c,则变形例的激光加工步骤结束。该改性层19c例如可以以裂纹到达被加工物11的表面11a或切削槽19a的底部的条件形成。另外,对于一条切断预定线13,也可以在深度不同的位置重叠地形成两个以上的改性层19c。
需要说明的是,在变形例的激光加工步骤之后,可以进一步进行分割步骤,沿着改性层19c对被加工物11进行分割。图5的(A)和图5的(B)是用于说明分割步骤的局部截面侧视图。分割步骤例如使用图5的(A)和图5的(B)所示的扩展装置32来进行。如图5的(A)和图5的(B)所示,扩展装置32具备用于支承被加工物11的支承结构34、和圆筒状的扩展鼓36。
支承结构34包含支承工作台38,该支承工作台38具有俯视时为圆形的开口部。在该支承工作台38的上表面载置有环状的框架23。在支承工作台38的外周部分设置有用于固定框架23的两个以上的夹具40。支承工作台38被用于使支承结构34升降的升降机构42支承。
升降机构42具备固定于下方的基台(未图示)的气缸套44、和插入气缸套44的活塞杆46。在活塞杆46的上端部固定有支承工作台38。升降机构42通过使活塞杆46上下移动而使支承结构34升降。
在支承工作台38的开口部配置有扩展鼓36。扩展鼓36的内径(直径)大于被加工物11的直径。另一方面,扩展鼓36的外径(直径)小于环状的框架23的内径(直径)、小于支承工作台38的开口部的直径。
在分割步骤中,首先,如图5的(A)所示,使支承工作台38的上表面的高度与扩展鼓36的上端的高度对齐,将框架23载置于支承工作台38的上表面后,利用夹具40固定框架23。由此,扩展鼓36的上端在被加工物11与框架23之间与片材21接触。
接着,利用升降机构42使支承结构34下降,如图5的(B)所示,使支承工作台38的上表面从扩展鼓36的上端向下方移动。其结果是,扩展鼓36相对于支承工作台38上升,片材21被扩展鼓36顶起,呈放射状被扩展。若片材21被扩展,则扩展片材21的方向的力(放射状的力)作用于被加工物11。由此,被加工物11以改性层19c为起点被分割成两个以上的芯片。
另外,在上述实施方式中,在第一保持步骤之前进行了片材粘贴步骤,但例如也可以在第二保持步骤之前(激光加工步骤之前)进行片材粘贴步骤。
另外,在上述实施方式和变形例的激光加工步骤中,从被加工物11的背面11b侧照射了激光束,但也可以从被加工物11的表面11a侧照射激光束。需要说明的是,该情况下,在第二保持步骤中被加工物11的背面11b侧被保持,因此可以在第二保持步骤之前将表面11a侧的片材21剥离,在背面11b侧粘贴其它的片材(保护部件)等。
另外,在上述切削步骤中,从夹持切削刀具10的一对喷嘴12供给了切削液14,但对于用于供给切削液14的喷嘴的方式没有特别限制。图6是示出用于供给切削液14的其它方式的喷嘴的侧视图。如图6所示,变形例的切削单元8除了具有切削刀具10和一对喷嘴12以外,还具有配置于切削刀具10的前方(或后方)的喷嘴(喷淋喷嘴)16。
通过从该喷嘴16供给切削液14,容易将切削液14供给到切削槽19a,能够更有效地对层叠体17中的金属进行改性。特别是,如图6所示,若使喷嘴16的喷射口朝向斜下方(例如,切削刀具10的加工点附近),则能够向切削槽19a供给、填充大量的切削液14,能够更有效地对层叠体17中的金属进行改性,因而是优选的。需要说明的是,图6中使用了一对喷嘴12以及喷嘴16,但也可以仅单独使用喷嘴16。
此外,上述实施方式的结构、方法等可以在不脱离本发明目的的范围内适当变更并实施。
符号说明
11 被加工物
11a 表面
11b 背面
13 切断预定线(间隔道)
15 器件
17 层叠体
19a 切削槽
19b 切缝(切口)
19c 改性层
21 片材(保护部件)
23 框架
2 切削装置
4 卡盘工作台(第一保持工作台)
4a 保持面
6 夹具
8 切削单元
10 切削刀具
12 喷嘴
14 切削液
16 喷嘴(喷淋喷嘴)
22 激光加工装置
24 卡盘工作台(第二保持工作台)
24a 保持面
26 夹具
28 激光照射单元
32 扩展装置
34 支承结构
36 扩展鼓
38 支承工作台
40 夹具
42 升降机构
44 气缸套
46 活塞杆
Claims (3)
1.一种加工方法,该加工方法对板状的被加工物进行加工,该板状的被加工物在包含切断预定线的表面侧形成有多个器件、在背面侧形成有包含金属的层叠体,该加工方法的特征在于,
该加工方法具备下述步骤:
保持步骤,利用保持工作台对被加工物的表面侧进行保持,使形成在该板状的被加工物的背面侧的该层叠体露出;
切削步骤,在实施该保持步骤后,使切削刀具的下端移动至低于该层叠体的下表面的位置,利用切削刀具沿着切断预定线对该板状的被加工物进行切削,形成分割该层叠体的切削槽;和
激光加工步骤,在实施该切削步骤后,沿着该切削槽向该板状的被加工物的背面侧照射激光束,
在该切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削,
该激光加工步骤中,沿着该切削槽照射对该板状的被加工物具有透过性的波长的激光束,在该板状的被加工物中形成沿着该切削槽的改性层,
在实施该激光加工步骤后,进一步具备分割步骤,沿着该改性层对该板状的被加工物进行分割。
2.一种加工方法,该加工方法对板状的被加工物进行加工,该板状的被加工物在包含切断预定线的表面侧形成有多个器件、在背面侧形成有包含金属的层叠体,该加工方法的特征在于,
该加工方法具备下述步骤:
保持步骤,利用保持工作台对被加工物的表面侧进行保持,使形成在该板状的被加工物的背面侧的该层叠体露出;
切削步骤,在实施该保持步骤后,使切削刀具的下端移动至低于该层叠体的下表面的位置,利用切削刀具沿着切断预定线对该板状的被加工物进行切削,形成分割该层叠体的切削槽;和
激光加工步骤,在实施该切削步骤后,沿着该切削槽向该板状的被加工物的背面侧照射激光束,
在该切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削,在该激光加工步骤中,沿着该切断预定线照射该板状的被加工物具有吸收性的波长的激光束,沿着该切断预定线在厚度方向上将该板状的被加工物切断。
3.如权利要求1或2所述的加工方法,其特征在于,
在该激光加工步骤中,对被加工物的该背面照射激光束,
在实施该激光加工步骤之前,进一步具备片材粘贴步骤,在被加工物的该表面粘贴片材。
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