TWI733994B - 加工方法 - Google Patents
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- TWI733994B TWI733994B TW107107579A TW107107579A TWI733994B TW I733994 B TWI733994 B TW I733994B TW 107107579 A TW107107579 A TW 107107579A TW 107107579 A TW107107579 A TW 107107579A TW I733994 B TWI733994 B TW I733994B
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- 238000003672 processing method Methods 0.000 title claims abstract description 20
- 238000001312 dry etching Methods 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002173 cutting fluid Substances 0.000 claims abstract description 21
- 150000007524 organic acids Chemical class 0.000 claims abstract description 16
- 239000007800 oxidant agent Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 10
- 230000000873 masking effect Effects 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 8
- 125000001424 substituent group Chemical group 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 5
- -1 L-ortholine Chemical compound 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 description 5
- 229940124530 sulfonamide Drugs 0.000 description 5
- 150000003456 sulfonamides Chemical class 0.000 description 5
- 150000003536 tetrazoles Chemical class 0.000 description 5
- 125000001399 1,2,3-triazolyl group Chemical class N1N=NC(=C1)* 0.000 description 4
- 239000004471 Glycine Substances 0.000 description 4
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical group NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- CVSVTCORWBXHQV-UHFFFAOYSA-N creatine Chemical compound NC(=[NH2+])N(C)CC([O-])=O CVSVTCORWBXHQV-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RJURFGZVJUQBHK-UHFFFAOYSA-N actinomycin D Chemical compound CC1OC(=O)C(C(C)C)N(C)C(=O)CN(C)C(=O)C2CCCN2C(=O)C(C(C)C)NC(=O)C1NC(=O)C1=C(N)C(=O)C(C)=C2OC(C(C)=CC=C3C(=O)NC4C(=O)NC(C(N5CCCC5C(=O)N(C)CC(=O)N(C)C(C(C)C)C(=O)OC4C)=O)C(C)C)=C3N=C21 RJURFGZVJUQBHK-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 229960005261 aspartic acid Drugs 0.000 description 3
- 150000001735 carboxylic acids Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CCVYRRGZDBSHFU-UHFFFAOYSA-N (2-hydroxyphenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1O CCVYRRGZDBSHFU-UHFFFAOYSA-N 0.000 description 2
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- 108010064733 Angiotensins Proteins 0.000 description 2
- 102000015427 Angiotensins Human genes 0.000 description 2
- 108010087765 Antipain Proteins 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- CKLJMWTZIZZHCS-UHFFFAOYSA-N D-OH-Asp Natural products OC(=O)C(N)CC(O)=O CKLJMWTZIZZHCS-UHFFFAOYSA-N 0.000 description 2
- QNAYBMKLOCPYGJ-UHFFFAOYSA-N D-alpha-Ala Natural products CC([NH3+])C([O-])=O QNAYBMKLOCPYGJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QNAYBMKLOCPYGJ-UWTATZPHSA-N L-Alanine Natural products C[C@@H](N)C(O)=O QNAYBMKLOCPYGJ-UWTATZPHSA-N 0.000 description 2
- CKLJMWTZIZZHCS-UWTATZPHSA-N L-Aspartic acid Natural products OC(=O)[C@H](N)CC(O)=O CKLJMWTZIZZHCS-UWTATZPHSA-N 0.000 description 2
- AHLPHDHHMVZTML-BYPYZUCNSA-N L-Ornithine Chemical compound NCCC[C@H](N)C(O)=O AHLPHDHHMVZTML-BYPYZUCNSA-N 0.000 description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 2
- RHGKLRLOHDJJDR-BYPYZUCNSA-N L-citrulline Chemical compound NC(=O)NCCC[C@H]([NH3+])C([O-])=O RHGKLRLOHDJJDR-BYPYZUCNSA-N 0.000 description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 2
- UKAUYVFTDYCKQA-VKHMYHEASA-N L-homoserine Chemical compound OC(=O)[C@@H](N)CCO UKAUYVFTDYCKQA-VKHMYHEASA-N 0.000 description 2
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 2
- 229930182821 L-proline Natural products 0.000 description 2
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 2
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 2
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 2
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 229960003767 alanine Drugs 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- SDNYTAYICBFYFH-TUFLPTIASA-N antipain Chemical compound NC(N)=NCCC[C@@H](C=O)NC(=O)[C@H](C(C)C)NC(=O)[C@H](CCCN=C(N)N)NC(=O)N[C@H](C(O)=O)CC1=CC=CC=C1 SDNYTAYICBFYFH-TUFLPTIASA-N 0.000 description 2
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 description 2
- 239000004202 carbamide Chemical group 0.000 description 2
- 235000013877 carbamide Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229960003624 creatine Drugs 0.000 description 2
- 239000006046 creatine Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 229960002885 histidine Drugs 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229960002429 proline Drugs 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- WPLOVIFNBMNBPD-ATHMIXSHSA-N subtilin Chemical compound CC1SCC(NC2=O)C(=O)NC(CC(N)=O)C(=O)NC(C(=O)NC(CCCCN)C(=O)NC(C(C)CC)C(=O)NC(=C)C(=O)NC(CCCCN)C(O)=O)CSC(C)C2NC(=O)C(CC(C)C)NC(=O)C1NC(=O)C(CCC(N)=O)NC(=O)C(CC(C)C)NC(=O)C(NC(=O)C1NC(=O)C(=C/C)/NC(=O)C(CCC(N)=O)NC(=O)C(CC(C)C)NC(=O)C(C)NC(=O)CNC(=O)C(NC(=O)C(NC(=O)C2NC(=O)CNC(=O)C3CCCN3C(=O)C(NC(=O)C3NC(=O)C(CC(C)C)NC(=O)C(=C)NC(=O)C(CCC(O)=O)NC(=O)C(NC(=O)C(CCCCN)NC(=O)C(N)CC=4C5=CC=CC=C5NC=4)CSC3)C(C)SC2)C(C)C)C(C)SC1)CC1=CC=CC=C1 WPLOVIFNBMNBPD-ATHMIXSHSA-N 0.000 description 2
- 125000000565 sulfonamide group Chemical group 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 150000003852 triazoles Chemical group 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 description 1
- CUKWUWBLQQDQAC-VEQWQPCFSA-N (3s)-3-amino-4-[[(2s)-1-[[(2s)-1-[[(2s)-1-[[(2s,3s)-1-[[(2s)-1-[(2s)-2-[[(1s)-1-carboxyethyl]carbamoyl]pyrrolidin-1-yl]-3-(1h-imidazol-5-yl)-1-oxopropan-2-yl]amino]-3-methyl-1-oxopentan-2-yl]amino]-3-(4-hydroxyphenyl)-1-oxopropan-2-yl]amino]-3-methyl-1-ox Chemical compound C([C@@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](C)C(O)=O)NC(=O)[C@@H](NC(=O)[C@H](CCCN=C(N)N)NC(=O)[C@@H](N)CC(O)=O)C(C)C)C1=CC=C(O)C=C1 CUKWUWBLQQDQAC-VEQWQPCFSA-N 0.000 description 1
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 1
- YGPSJZOEDVAXAB-UHFFFAOYSA-N (R)-Kynurenine Natural products OC(=O)C(N)CC(=O)C1=CC=CC=C1N YGPSJZOEDVAXAB-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- UKAUYVFTDYCKQA-UHFFFAOYSA-N -2-Amino-4-hydroxybutanoic acid Natural products OC(=O)C(N)CCO UKAUYVFTDYCKQA-UHFFFAOYSA-N 0.000 description 1
- 125000001376 1,2,4-triazolyl group Chemical group N1N=C(N=C1)* 0.000 description 1
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- GRUVVLWKPGIYEG-UHFFFAOYSA-N 2-[2-[carboxymethyl-[(2-hydroxyphenyl)methyl]amino]ethyl-[(2-hydroxyphenyl)methyl]amino]acetic acid Chemical compound C=1C=CC=C(O)C=1CN(CC(=O)O)CCN(CC(O)=O)CC1=CC=CC=C1O GRUVVLWKPGIYEG-UHFFFAOYSA-N 0.000 description 1
- RNMCCPMYXUKHAZ-UHFFFAOYSA-N 2-[3,3-diamino-1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound NC1(N)CCCC(CC(O)=O)(CC(O)=O)C1(CC(O)=O)CC(O)=O RNMCCPMYXUKHAZ-UHFFFAOYSA-N 0.000 description 1
- PWKSKIMOESPYIA-UHFFFAOYSA-N 2-acetamido-3-sulfanylpropanoic acid Chemical compound CC(=O)NC(CS)C(O)=O PWKSKIMOESPYIA-UHFFFAOYSA-N 0.000 description 1
- QDGAVODICPCDMU-UHFFFAOYSA-N 2-amino-3-[3-[bis(2-chloroethyl)amino]phenyl]propanoic acid Chemical compound OC(=O)C(N)CC1=CC=CC(N(CCCl)CCCl)=C1 QDGAVODICPCDMU-UHFFFAOYSA-N 0.000 description 1
- NYPYHUZRZVSYKL-ZETCQYMHSA-N 3,5-diiodo-L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC(I)=C(O)C(I)=C1 NYPYHUZRZVSYKL-ZETCQYMHSA-N 0.000 description 1
- UWRBFYBQPCJRRL-UHFFFAOYSA-N 3-[bis(carboxymethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CC(O)=O)CC(O)=O UWRBFYBQPCJRRL-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 102000005862 Angiotensin II Human genes 0.000 description 1
- 101800000734 Angiotensin-1 Proteins 0.000 description 1
- 102400000344 Angiotensin-1 Human genes 0.000 description 1
- 101800000733 Angiotensin-2 Proteins 0.000 description 1
- 101710126338 Apamin Proteins 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical group NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- ILRYLPWNYFXEMH-UHFFFAOYSA-N D-cystathionine Natural products OC(=O)C(N)CCSCC(N)C(O)=O ILRYLPWNYFXEMH-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical class [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- XSISQURPIRTMAY-UHFFFAOYSA-N Hydroxyethyl glycine Chemical compound NCC(=O)OCCO XSISQURPIRTMAY-UHFFFAOYSA-N 0.000 description 1
- PMMYEEVYMWASQN-DMTCNVIQSA-N Hydroxyproline Chemical compound O[C@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-DMTCNVIQSA-N 0.000 description 1
- WTDRDQBEARUVNC-LURJTMIESA-N L-DOPA Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-LURJTMIESA-N 0.000 description 1
- FFEARJCKVFRZRR-UHFFFAOYSA-N L-Methionine Natural products CSCCC(N)C(O)=O FFEARJCKVFRZRR-UHFFFAOYSA-N 0.000 description 1
- AGPKZVBTJJNPAG-UHNVWZDZSA-N L-allo-Isoleucine Chemical compound CC[C@@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-UHNVWZDZSA-N 0.000 description 1
- AYFVYJQAPQTCCC-HRFVKAFMSA-N L-allothreonine Chemical compound C[C@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-HRFVKAFMSA-N 0.000 description 1
- QWCKQJZIFLGMSD-VKHMYHEASA-N L-alpha-aminobutyric acid Chemical compound CC[C@H](N)C(O)=O QWCKQJZIFLGMSD-VKHMYHEASA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-N L-arginine Chemical compound OC(=O)[C@@H](N)CCCN=C(N)N ODKSFYDXXFIFQN-BYPYZUCNSA-N 0.000 description 1
- 229930064664 L-arginine Natural products 0.000 description 1
- 235000014852 L-arginine Nutrition 0.000 description 1
- ILRYLPWNYFXEMH-WHFBIAKZSA-N L-cystathionine Chemical compound [O-]C(=O)[C@@H]([NH3+])CCSC[C@H]([NH3+])C([O-])=O ILRYLPWNYFXEMH-WHFBIAKZSA-N 0.000 description 1
- LEVWYRKDKASIDU-IMJSIDKUSA-N L-cystine Chemical compound [O-]C(=O)[C@@H]([NH3+])CSSC[C@H]([NH3+])C([O-])=O LEVWYRKDKASIDU-IMJSIDKUSA-N 0.000 description 1
- 239000004158 L-cystine Substances 0.000 description 1
- 235000019393 L-cystine Nutrition 0.000 description 1
- SSISHJJTAXXQAX-ZETCQYMHSA-N L-ergothioneine Chemical compound C[N+](C)(C)[C@H](C([O-])=O)CC1=CNC(=S)N1 SSISHJJTAXXQAX-ZETCQYMHSA-N 0.000 description 1
- GGLZPLKKBSSKCX-YFKPBYRVSA-N L-ethionine Chemical compound CCSCC[C@H](N)C(O)=O GGLZPLKKBSSKCX-YFKPBYRVSA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- 229930182816 L-glutamine Natural products 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- 229930182844 L-isoleucine Natural products 0.000 description 1
- YGPSJZOEDVAXAB-QMMMGPOBSA-N L-kynurenine Chemical compound OC(=O)[C@@H](N)CC(=O)C1=CC=CC=C1N YGPSJZOEDVAXAB-QMMMGPOBSA-N 0.000 description 1
- DWPCPZJAHOETAG-IMJSIDKUSA-N L-lanthionine Chemical compound OC(=O)[C@@H](N)CSC[C@H](N)C(O)=O DWPCPZJAHOETAG-IMJSIDKUSA-N 0.000 description 1
- 239000004395 L-leucine Substances 0.000 description 1
- 235000019454 L-leucine Nutrition 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- 229930195722 L-methionine Natural products 0.000 description 1
- XUIIKFGFIJCVMT-LBPRGKRZSA-N L-thyroxine Chemical compound IC1=CC(C[C@H]([NH3+])C([O-])=O)=CC(I)=C1OC1=CC(I)=C(O)C(I)=C1 XUIIKFGFIJCVMT-LBPRGKRZSA-N 0.000 description 1
- 108010036176 Melitten Proteins 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- JDHILDINMRGULE-LURJTMIESA-N N(pros)-methyl-L-histidine Chemical compound CN1C=NC=C1C[C@H](N)C(O)=O JDHILDINMRGULE-LURJTMIESA-N 0.000 description 1
- BRMWTNUJHUMWMS-LURJTMIESA-N N(tele)-methyl-L-histidine Chemical compound CN1C=NC(C[C@H](N)C(O)=O)=C1 BRMWTNUJHUMWMS-LURJTMIESA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- FOUZISDNESEYLX-UHFFFAOYSA-N N-hydroxyethyl glycine Natural products OCCNCC(O)=O FOUZISDNESEYLX-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- AHLPHDHHMVZTML-UHFFFAOYSA-N Orn-delta-NH2 Natural products NCCCC(N)C(O)=O AHLPHDHHMVZTML-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- GBFLZEXEOZUWRN-VKHMYHEASA-N S-carboxymethyl-L-cysteine Chemical compound OC(=O)[C@@H](N)CSCC(O)=O GBFLZEXEOZUWRN-VKHMYHEASA-N 0.000 description 1
- 108010077895 Sarcosine Proteins 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000004473 Threonine Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XYDQMRVDDPZFMM-UHFFFAOYSA-N [Ag+2] Chemical class [Ag+2] XYDQMRVDDPZFMM-UHFFFAOYSA-N 0.000 description 1
- VYTBPJNGNGMRFH-UHFFFAOYSA-N acetic acid;azane Chemical compound N.N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O VYTBPJNGNGMRFH-UHFFFAOYSA-N 0.000 description 1
- 229940091181 aconitic acid Drugs 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229940024606 amino acid Drugs 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 description 1
- ORWYRWWVDCYOMK-HBZPZAIKSA-N angiotensin I Chemical compound C([C@@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N[C@@H](CC(C)C)C(O)=O)NC(=O)[C@@H](NC(=O)[C@H](CCCN=C(N)N)NC(=O)[C@@H](N)CC(O)=O)C(C)C)C1=CC=C(O)C=C1 ORWYRWWVDCYOMK-HBZPZAIKSA-N 0.000 description 1
- 229950006323 angiotensin ii Drugs 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229940000635 beta-alanine Drugs 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 1
- OWIUPIRUAQMTTK-UHFFFAOYSA-N carbazic acid Chemical compound NNC(O)=O OWIUPIRUAQMTTK-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910001919 chlorite Inorganic materials 0.000 description 1
- 229910052619 chlorite group Inorganic materials 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229940106681 chloroacetic acid Drugs 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 229940018557 citraconic acid Drugs 0.000 description 1
- 229960002173 citrulline Drugs 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- WOWBFOBYOAGEEA-UHFFFAOYSA-N diafenthiuron Chemical compound CC(C)C1=C(NC(=S)NC(C)(C)C)C(C(C)C)=CC(OC=2C=CC=CC=2)=C1 WOWBFOBYOAGEEA-UHFFFAOYSA-N 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229940093497 ergothioneine Drugs 0.000 description 1
- YSMODUONRAFBET-UHNVWZDZSA-N erythro-5-hydroxy-L-lysine Chemical compound NC[C@H](O)CC[C@H](N)C(O)=O YSMODUONRAFBET-UHNVWZDZSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 1
- 229960002989 glutamic acid Drugs 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229960002591 hydroxyproline Drugs 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- 229960003136 leucine Drugs 0.000 description 1
- 229950008325 levothyroxine Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- VDXZNPDIRNWWCW-JFTDCZMZSA-N melittin Chemical compound NCC(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](C)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H]([C@@H](C)O)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N1CCC[C@H]1C(=O)N[C@@H](C)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCC(N)=O)C(N)=O)CC1=CNC2=CC=CC=C12 VDXZNPDIRNWWCW-JFTDCZMZSA-N 0.000 description 1
- HNEGQIOMVPPMNR-NSCUHMNNSA-N mesaconic acid Chemical compound OC(=O)C(/C)=C/C(O)=O HNEGQIOMVPPMNR-NSCUHMNNSA-N 0.000 description 1
- DWPCPZJAHOETAG-UHFFFAOYSA-N meso-lanthionine Natural products OC(=O)C(N)CSCC(N)C(O)=O DWPCPZJAHOETAG-UHFFFAOYSA-N 0.000 description 1
- 229960004452 methionine Drugs 0.000 description 1
- HNEGQIOMVPPMNR-UHFFFAOYSA-N methylfumaric acid Natural products OC(=O)C(C)=CC(O)=O HNEGQIOMVPPMNR-UHFFFAOYSA-N 0.000 description 1
- YVIIHEKJCKCXOB-STYWVVQQSA-N molport-023-276-178 Chemical compound C([C@H](NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H]1CSSC[C@H]2C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](C)C(=O)N3CCC[C@H]3C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@H](C(=O)N[C@@H](C)C(=O)N[C@H](C(N[C@@H](CSSC[C@H](N)C(=O)N[C@@H](CC(N)=O)C(=O)N2)C(=O)N[C@@H](C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N1)=O)CC(C)C)[C@@H](C)O)C(N)=O)C1=CNC=N1 YVIIHEKJCKCXOB-STYWVVQQSA-N 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 description 1
- 229960003104 ornithine Drugs 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 1
- 229940107700 pyruvic acid Drugs 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229960001153 serine Drugs 0.000 description 1
- IFGCUJZIWBUILZ-UHFFFAOYSA-N sodium 2-[[2-[[hydroxy-(3,4,5-trihydroxy-6-methyloxan-2-yl)oxyphosphoryl]amino]-4-methylpentanoyl]amino]-3-(1H-indol-3-yl)propanoic acid Chemical compound [Na+].C=1NC2=CC=CC=C2C=1CC(C(O)=O)NC(=O)C(CC(C)C)NP(O)(=O)OC1OC(C)C(O)C(O)C1O IFGCUJZIWBUILZ-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- 229960002898 threonine Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 229960004441 tyrosine Drugs 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229960004295 valine Drugs 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
[課題]提供一種加工方法,該加工方法對在切斷預定線上重疊而形成有包含金屬之積層體的板狀的被加工物進行加工之時,可維持加工的品質並且提高加工的速度。 [解決手段]對在切斷預定線上重疊而形成有金屬之積層體的板狀的被加工物進行加工的加工方法,包含以下步驟:第1保持步驟,以第1保持台保持被加工物之積層體側;乾式蝕刻步驟,隔著設置於切斷預定線以外的區域的遮罩材對被加工物施行乾式蝕刻,藉此,沿著切斷預定線以保留積層體的形式形成蝕刻溝;第2保持步驟,以第2保持台保持被加工物之積層體側或與該積層體為相反側;以及切割步驟,以切割刀切割蝕刻溝的底部,而沿著切斷預定線將被加工物與積層體一起切斷,在切割步驟中,是一邊對被加工物供給包含有機酸與氧化劑的切割液一邊進行切割。
Description
發明領域 本發明是有關於一種加工方法,是用於對在切斷預定線上重疊而形成有包含金屬的積層體之板狀的被加工物進行加工。
發明背景 在以行動電話及個人電腦為代表的電子機器中,具備有電子電路等的器件之器件晶片已成為必要的構成要素。器件晶片是藉由例如以複數條切斷預定線(切割道)將晶圓的正面加以區劃,並在各區域形成器件後,沿著此切斷預定線將晶圓切斷而獲得,其中該晶圓是以矽等半導體材料所形成。
近年來,在如上述的晶圓的切斷預定線上,大多形成有稱為TEG (測試元件群, Test Elements Group)的評價用元件,該評價用元件是用於評價器件的電氣特性(參照例如專利文獻1、2等)。藉由將TEG形成於切斷預定線上,可以將器件晶片的獲取數量確保在最大限度,並且可以和晶圓的切斷同時地去除評價後的不需要之TEG。 先前技術文獻 專利文獻
專利文獻1:日本專利特開平6-349926號公報 專利文獻2:日本專利特開2005-21940號公報
發明概要 發明欲解決之課題 然而,若欲以切割刀對TEG之類的包含金屬之積層體進行切割、去除時,在切割包含於積層體的金屬之時會變得容易產生延伸、稱為毛邊的突起,其中該切割刀是將磨粒分散於結合材而構成。並且,若由切割刀進行的加工的速度變高時,會使發熱量增加並使毛邊也變大。因此,在此方法中,必須將加工的速度抑制得較低,以免降低加工之品質。
本發明是有鑒於所述問題點而作成的發明,其目的在於提供一種加工方法,該加工方法對在切斷預定線上重疊而形成有包含金屬的積層體的板狀的被加工物進行加工之時,可維持加工的品質並且提高加工的速度。 用以解決課題之手段
根據本發明之一態樣,可提供一種加工方法,是對在切斷預定線上重疊而形成有包含金屬之積層體的板狀的被加工物進行加工,該加工方法具備以下步驟: 第1保持步驟,以第1保持台保持被加工物之該積層體側; 乾式蝕刻步驟,在實施該第1保持步驟後,隔著設置於該切斷預定線以外的區域之遮罩材對被加工物施行乾式蝕刻,藉此,沿著該切斷預定線以保留該積層體的形式形成蝕刻溝; 第2保持步驟,在實施該乾式蝕刻步驟後,以第2保持台保持被加工物之該積層體側或與該積層體為相反側;以及 切割步驟,在實施該第2保持步驟後,以切割刀切割該蝕刻溝的底部,而沿著該切斷預定線將被加工物與該積層體一起切斷, 在該切割步驟中,是一邊對被加工物供給包含有機酸及氧化劑的切割液一邊進行切割。
較理想的是,於本發明之一態樣中,在該切割步驟中所使用的是厚度比該蝕刻溝的寬度更薄的該切割刀。 發明效果
在本發明之一態樣的加工方法中,因為是在以切割刀將包含金屬之積層體切斷之時,供給包含有機酸與氧化劑的切割液,所以可以一邊利用有機酸與氧化劑將金屬改質而降低其延展性一邊進行切斷。藉此,即使提高加工的速度仍然可以抑制毛邊的產生。亦即,可維持加工的品質並且提高加工的速度。
又,在本發明之一態樣的加工方法中,由於是藉由隔著設置於切斷預定線以外的區域的遮罩材來施行乾式蝕刻,而可以一次就沿著全部的切斷預定線來對被加工物進行加工並形成蝕刻溝,所以在對切斷預定線的數量較多的被加工物進行加工的情況等之下,可以維持加工之品質同時縮短在每一條切斷預定線的加工上所需要的時間。亦即,可維持加工的品質並且提高加工的速度。
用以實施發明之形態 參照附圖,說明本發明的一個態樣的實施形態。本實施形態的加工方法是用於對在切斷預定線上重疊而形成有包含金屬的積層體的板狀的被加工物進行加工之方法,該加工方法包含:遮罩材形成步驟(參照圖2(A))、第1保持步驟(參照圖2(B))、乾式蝕刻步驟(參照圖3(A))、第2保持步驟(參照圖3(B))、以及切割步驟(參照圖4)。
在遮罩材形成步驟中,是將遮罩材形成在被加工物之與積層體為相反側上。此遮罩材是形成在切斷預定線以外的區域。在第1保持步驟中,是以乾式蝕刻裝置的靜電夾頭(第1保持台)保持被加工物的積層體側,以使遮罩材露出。在乾式蝕刻步驟中,是隔著遮罩材對被加工物施行乾式蝕刻,而沿著切斷預定線以保留積層體的形式形成蝕刻溝。
在第2保持步驟中,是以切割裝置的工作夾台(第2保持台)保持被加工物的積層體側。在切割步驟中,是一邊供給包含有機酸及氧化劑的切割液一邊以切割刀切割蝕刻溝的底部,而沿著切斷預定線將被加工物與積層體一起切斷。以下,詳細說明本實施形態的加工方法。
圖1(A)是示意地顯示以本實施形態之加工方法所加工之被加工物11的構成例之立體圖。如圖1(A)所示,本實施形態的被加工物11是採用矽(Si)等半導體材料來形成為圓盤狀的晶圓,並將其正面11a側區分成中央的器件區域、與包圍器件區域的外周剩餘區域。
器件區域是以排列成格子狀之切斷預定線(切割道,Street)13進一步區劃為複數個區域,且於各區域中形成有IC(積體電路,Integrated Circuit)等器件15。又,於被加工物11的背面11b側設有包含金屬之積層體17。此積層體17是以例如鈦(Ti)、鎳(Ni)、金(Au)等所形成之厚度為數μm左右的多層金屬膜,並作為電極等而發揮功能。此積層體17也形成在與切斷預定線13重疊的區域。
再者,在本實施形態中,雖然是以矽等半導體材料所形成之圓盤狀的晶圓作為被加工物11,但是對被加工物11之材質、形狀、構造、大小等並未限制。同樣地,對器件15或積層體17的種類、數量、形狀、構造、大小、配置等也未限制。例如,也可以將沿著切斷預定線13形成有作為電極而發揮功能的積層體17的封裝基板等,作為被加工物11來使用。
圖1(B)是示意地顯示已對被加工物11貼上切割膠帶21等的狀態之立體圖。如圖2(A)所示,在實施本實施形態的加工方法之前,是在被加工物11的背面11b側(積層體17)貼上直徑比被加工物11更大的切割膠帶21。又,在切割膠帶21的外周部分固定環狀的框架23。
藉此,被加工物11是透過切割膠帶21而被環狀的框架23所支撐。又,在本實施形態中,雖然是說明關於對透過切割膠帶21而被支撐於環狀的框架23的狀態之被加工物11進行加工的例子,但也可以不使用切割膠帶21或框架23而對被加工物11進行加工。
在本實施形態的加工方法中,首先是進行遮罩材形成步驟,該遮罩材形成步驟是形成覆蓋被加工物11的正面11a側(與積層體17為相反側)之乾式蝕刻用的遮罩材。圖2(A)是用於說明遮罩材形成步驟的局部截面側視圖,且示意地顯示已將遮罩材25形成於被加工物11的正面11a側之狀態。
此遮罩材25是以例如光刻法等方法所形成,且至少對之後的乾式蝕刻具有某種程度的耐受性。又,如圖2(A)所示,遮罩材25是形成為使切斷預定線13(切割溝19a)露出。亦即,遮罩材25是設置在切斷預定線13(切割溝19a)以外的區域。
於遮罩材形成步驟後是進行第1保持步驟,該第1保持步驟是以乾式蝕刻裝置(電漿蝕刻裝置)的靜電夾頭(第1保持台)保持被加工物11。圖2(B)是示意地顯示乾式蝕刻裝置(電漿蝕刻裝置)22的圖。乾式蝕刻裝置22具備有於內部形成有處理用之空間的真空腔室24。於真空腔室24的側壁,形成有用於搬入、搬出被加工物11的開口24a。
於開口24a的外部,設置有用於將開口24a開啟關閉的閘門26。於閘門26上連結有開閉機構(圖未示),藉由此開閉機構,閘門26即可進行開啟關閉。藉由打開閘門26使開口24a露出,可以通過開口24a將被加工物11搬入真空腔室24的內部之空間,或者將被加工物11從真空腔室24的內部之空間搬出。
於真空腔室24之底壁中,形成有排氣口24b。此排氣口24b是連接於真空幫浦等排氣單元28。於真空腔室24的空間內配置有下部電極30。下部電極30是使用導電性的材料來形成為圓盤狀,且在真空腔室24的外部連接於高頻電源32。
於下部電極30的上表面配置有靜電夾頭34。靜電夾頭34具備例如已互相絕緣的複數個電極36a、36b,並藉由在各電極36a、36b與被加工物11之間產生的電力來吸附、保持被加工物11。再者,本實施形態的靜電夾頭34是構成為可以將直流電源38a之正極連接到電極36a,並將直流電源38b之負極連接到電極36b。
於真空腔室24的頂壁是隔著絕緣材而安裝有上部電極40,該上部電極40是使用導電性的材料而形成為圓盤狀。於上部電極40的下表面側形成有複數個氣體噴出孔40a,且此氣體噴出孔40a是透過設置於上部電極40的上表面側的氣體供給孔40b等而連接到氣體供給源42。藉此,可將乾式蝕刻用的原料氣體供給至真空腔室24的空間內。此上部電極40也是在真空腔室24的外部連接到高頻電源44。
在第1保持步驟中,首先是藉由開閉機構使閘門26下降。接著,通過開口24a將被加工物11搬入真空腔室24的空間內,並載置於靜電夾頭34。具體而言,是使在被加工物11的背面11b側(積層體17)所貼上的切割膠帶21接觸於靜電夾頭34的上表面。之後,只要使靜電夾頭34作動,即可將被加工物11在正面11a側的遮罩材25朝上方露出的狀態下吸附、保持於靜電夾頭34上。
在第1保持步驟後是進行乾式蝕刻步驟,該乾式蝕刻步驟是隔著遮罩材25對被加工物11施行乾式蝕刻(電漿蝕刻),藉此,沿著切斷預定線13以保留積層體17的形式形成蝕刻溝。乾式蝕刻步驟是繼續使用乾式蝕刻裝置22來進行。
具體而言,首先是藉由開閉機構使閘門26上升,以將真空腔室24的空間密閉。進一步地使排氣單元28作動,以將空間內減壓。在此狀態下,若一邊從氣體供給源42以規定的流量供給乾式蝕刻用的原料氣體,一邊以高頻電源32、44將適當的高頻電力供給至下部電極30及上部電極40時,會在下部電極30與上部電極40之間產生包含自由基或離子等的電漿。
藉此,可以將未被遮罩材25覆蓋的被加工物11的正面11a側(亦即,切斷預定線13(切割溝19a))暴露於電漿中,而對被加工物11進行加工。再者,從氣體供給源42所供給的乾式蝕刻用的原料氣體,可相應於被加工物11的材質等而適當地選擇。藉由此乾式蝕刻,可形成不貫穿積層體17之所期望的深度的蝕刻溝。亦即,此蝕刻溝是沿著切斷預定線13以保留積層體17的形式形成。
圖3(A)是示意地顯示在乾式蝕刻步驟中於被加工物11上形成有蝕刻溝19a的狀態的局部截面側視圖。再者,在可以適當地去除被加工物11的條件的乾式蝕刻中,通常無法將包含金屬之積層體17大部分去除。據此,即使乾式蝕刻的時間稍微變長,也不會失去與切斷預定線13重疊的積層體17。
在此乾式蝕刻步驟中,由於可以一次沿著全部的切斷預定線13對被加工物11進行加工來形成蝕刻溝19a,所以在對切斷預定線13的數量較多的被加工物11進行加工的情況等之下,可以維持加工之品質同時縮短在每一條切斷預定線13的加工上所需要的時間。再者,於乾式蝕刻步驟後,是利用灰化(ashing)等方法將遮罩材25去除。
於乾式蝕刻步驟後是進行第2保持步驟,該第2保持步驟是以切割裝置的工作夾台(第2保持台)保持被加工物11。圖3(B)是用於說明第2保持步驟的局部截面側視圖。第2保持步驟是使用例如圖3(B)所示的切割裝置2來進行。切割裝置2具備有用於吸引、保持被加工物11之工作夾台(第2保持台)4。
工作夾台4是與馬達等的旋轉驅動源(圖未示)相連結,並繞著與鉛直方向大致平行的旋轉軸旋轉。又,在工作夾台4的下方設置有加工進給機構(未圖示),工作夾台4是藉由此加工進給機構而朝加工進給方向移動。
工作夾台4的上表面的一部分是形成為用於吸引、保持被加工物11(切割膠帶21)的保持面4a。保持面4a是透過形成在工作夾台4的內部的吸引路(圖未示)等而連接到吸引源(圖未示)。藉由吸引源的負壓作用在保持面4a,可將被加工物11吸引、保持於工作夾台4。於該工作夾台4的周圍設有用於固定環狀的框架23的複數個夾具6。
在第2保持步驟中,首先是使在被加工物11的背面11b側(積層體17)所貼上的切割膠帶21接觸於工作夾台4的保持面4a,並使吸引源的負壓作用。並一併利用夾具6來固定框架23。藉此,被加工物11是在正面11a側的積層體17朝上方露出的狀態下被工作夾台4及夾具6所保持。
於第2保持步驟後是進行切割步驟,該切割步驟是對蝕刻溝19a的底部進行切割,而沿著切斷預定線13將被加工物11與積層體17一起切斷。圖4是用於說明切割步驟的局部截面側視圖。切割步驟是繼續使用切割裝置2來進行。如圖4所示,切割裝置2更具備有配置於工作夾台4的上方的切割單元8。
切割單元8具備有主軸(圖未示),該主軸是成為相對於加工進給方向大致垂直的旋轉軸。在主軸的一端側,裝設有環狀的切割刀10,該環狀的切割刀10是將磨粒分散於結合材而構成。在主軸的另一端側,連結有馬達等的旋轉驅動源(圖未示),且裝設在主軸的一端側的切割刀10,是藉由從該旋轉驅動源所傳來的力而旋轉。再者,在本實施形態的切割步驟中,所使用的是厚度比蝕刻溝19a的寬度更薄的切割刀10。
又,主軸是被移動機構(圖未示)所支撐。切割刀10是藉由此移動機構,而在垂直於加工進給方向的分度進給方向、及鉛直方向(垂直於加工進給方向及分度進給方向的方向)上移動。於切割刀10的側邊,是將一對噴嘴12配置成包夾切割刀10。噴嘴12是構成為可以對切割刀10或被加工物11供給切割液14。
在切割步驟中,首先是使工作夾台4旋轉,並將成為對象之蝕刻溝19a(切斷預定線13)的伸長的方向對準於切割裝置2的加工進給方向。又,使工作夾台4及切割單元8相對地移動,而將切割刀10的位置於成為對象之蝕刻溝19a(切斷預定線13)的延長線上對準。然後,使切割刀10的下端移動至比積層體17的下表面更低的位置。
之後,一邊旋轉切割刀10一邊使工作夾台4朝加工進給方向移動。一併從噴嘴12對切割刀10及被加工物11供給包含有機酸及氧化劑的切割液14。藉此,可以將切割刀10沿著對象的蝕刻溝19a(切斷預定線13)切入,而將被加工物11與積層體17一起完全地切斷並形成刻口(切口)19b。
如本實施形態,藉由於切割液14中包含有機酸,可以將積層體17中的金屬改質,而抑制其延展性。又,藉由於切割液14中包含氧化劑,積層體17中的金屬的表面即變得容易氧化。其結果,可充份地降低積層體17中的金屬的延展性,而提高加工性。
作為包含於切割液14中的有機酸,可採用例如,分子內具有至少1個羧基和至少1個胺基的化合物。此時,胺基中之至少1個宜為2級或3級的胺基。又,作為有機酸而使用之化合物宜具有取代基。
可以作為有機酸而使用之胺基酸,可列舉出甘胺酸、二羥乙基甘胺酸、甘胺醯甘胺酸、羥乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別異白胺酸、L-異白胺酸、L-苯丙胺酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺酸、L-麩醯胺酸、氮絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-組胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫鹼(ergothioneine)、蜂毒明肽(apamin)、第一型血管收縮素(angiotensin I)、第二型血管收縮素(angiotensin II)及抗痛素(antipain)等。其中,尤以甘胺酸、L-丙胺酸、L-脯胺酸、L-組胺酸、L-離胺酸、以及二羥乙基甘胺酸為較佳。
又,可以作為有機酸而使用的胺基多元酸(amino polyacid),可列舉出亞胺二乙酸、氮基三乙酸、二乙三胺五乙酸、乙二胺四乙酸、羥乙基亞胺二乙酸、氮基三亞甲基膦酸(nitrilotris(methylene)phosphonic acid)、乙二胺-N,N,N',N'-四亞甲基磺酸、1,2-二胺丙烷四乙酸、二醇醚二胺四乙酸、反式環己烷二胺四乙酸、乙二胺鄰羥基苯基乙酸、乙二胺二琥珀酸(SS體)、β-丙胺酸二乙酸、N-(2-羧酸根合乙基)-L-天冬胺酸、N,N'-雙(2-羥基芐基)乙二胺N,N'-二乙酸等。
此外,可以作為有機酸而使用之羧酸,可列舉出甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、蘋果酸、琥珀酸、庚二酸、氫硫乙酸、乙醛酸、氯乙酸、丙酮酸、乙醯乙酸、戊二酸等之飽和羧酸,或丙烯酸、甲基丙烯酸、巴豆酸、反丁烯二酸、順丁烯二酸、中康酸、檸康酸、烏頭酸等之不飽和羧酸、安息香酸類、甲苯甲酸、鄰苯二甲酸類、萘甲酸類、焦蜜石酸、以及萘二甲酸等之環狀不飽和羧酸等。
作為包含於切割液14中的氧化劑,可以使用例如,過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水及銀(II)鹽、鐵(III)鹽、或其有機錯鹽等。
又,亦可在切割液14中混合防蝕劑。藉由混合防蝕劑,可防止被加工物11中所含有之金屬腐蝕(溶出)。作為防蝕劑,較理想的是使用例如,分子內具有3個以上的氮原子,且具有稠環構造之芳香雜環化合物、或分子內具有4個以上的氮原子之芳香雜環化合物。此外,芳環化合物宜包含羧基、磺酸基、羥基、烷氧基。具體而言,宜為四唑衍生物、1,2,3-三唑衍生物、以及1,2,4-三唑衍生物。
可以作為防蝕劑而使用的四唑衍生物,可列舉出在形成四唑環之氮原子上不具有取代基,且在四唑的第5位置上導入以下的基之四唑衍生物:選自於由磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代之烷基。
又,可以作為防蝕劑而使用的1,2,3-三唑衍生物,可列舉出在形成1,2,3-三唑環之氮原子上不具有取代基,且在1,2,3-三唑的第4位置及/或第5位置上導入以下的基之三唑衍生物:選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
又,可以作為防蝕劑而使用的1,2,4-三唑衍生物,可列舉出在形成1,2,4-三唑環之氮原子上不具有取代基,且在1,2,4-三唑的第2位置及/或第5位置上導入以下的基之三唑衍生物:選自於由磺酸基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
當重複上述工序,而沿著全部的蝕刻溝19a(切斷預定線13)都形成刻口19b時,切割步驟即結束。在本實施形態中,因為是一邊對被加工物11供給包含有機酸及氧化劑的切割液14一邊進行切割,所以可一邊將包含於積層體17的金屬改質以降低其延展性,一邊進行切割。藉此,即使提高加工的速度仍然可以抑制毛邊的產生。
又,在本實施例中,因為所使用的是厚度比蝕刻溝19a的寬度更薄的切割刀10,所以容易使切割液14積留在蝕刻溝19a與切割刀10之間。其結果,成為可以將充分之量的切割液14供給至積層體17,而可以更加提高被加工物11的加工性。
如以上,在本實施形態的加工方法中,因為是在以切割刀10將包含金屬之積層體17切斷之時,供給包含有機酸與氧化劑的切割液14,所以可以一邊利用有機酸與氧化劑將金屬改質而降低其延展性一邊進行切割。藉此,即使提高加工的速度仍然可以抑制毛邊的產生。亦即,可維持加工的品質並且提高加工的速度。
又,在本實施形態的加工方法中,由於是藉由隔著設置於切斷預定線13以外的區域的遮罩材25來施行乾式蝕刻,而可以一次就沿著全部的切斷預定線13來對被加工物11進行加工並形成蝕刻溝19a,所以在對切斷預定線13的數量較多的被加工物11進行加工的情況等之下,可以維持加工之品質同時縮短在每一條切斷預定線13的加工上所需要的時間。亦即,可維持加工的品質並且提高加工的速度。
再者,本發明並不因上述實施形態之記載而受到限制,並可作各種變更而實施。例如,在上述實施形態中,雖然是對在背面11b側形成有包含金屬之積層體17的被加工物11進行加工,但也可以對在正面側形成有包含金屬之積層體的被加工物進行加工。再者,作為這種被加工物,可以列舉出例如在與正面側的切斷預定線重疊的位置上具備有積層體之晶圓等,且該積層體包含稱為TEG(測試元件群, Test Elements Group)的評價用的元件。
又,在上述實施形態中,雖然是使切割刀10從被加工物11的正面11a側切入,但是也可以使切割刀10從被加工物11的背面11b側切入。只是,在這種情況下必須在將切割膠帶21剝離後再以工作夾台4保持被加工物11的正面11a側,而使被加工物11的背面11b側朝上方露出。
又,在上述之切割步驟中,雖然是從包夾切割刀10的一對噴嘴12來供給切割液14,但對於用於供給切割液14之噴嘴的態樣並無特別的限制。圖5是顯示用於供給切割液14的另外的態樣的噴嘴的側視圖。如圖5所示,變形例的切割單元8,是除了切割刀10及一對噴嘴12以外,還具有配置在切割刀10的前方(或者後方)的噴嘴(噴淋噴嘴)16。
藉由從此噴嘴16供給切割液14,變得容易對刻口(切口)19b供給切割液14,而形成為可以更有效地將積層體17中的金屬改質。特別是如圖5所示,當將噴嘴16的噴射口朝向斜下方(例如切割刀10的加工點附近)時,會對刻口19b供給、充填大量的切割液14,而可以更效地將積層體17中的金屬改質,因而較理想。又,在圖5中,雖然是將噴嘴16與一對噴嘴12一起使用,但亦可僅單獨使用噴嘴16。
另外,上述實施形態之構造、方法等,只要在不脫離本發明之目的之範圍內,均可適當變更而實施。
11‧‧‧被加工物11a‧‧‧正面11b‧‧‧背面13‧‧‧切斷預定線(切割道)15‧‧‧器件17‧‧‧積層體19a‧‧‧蝕刻溝19b‧‧‧刻口(切口)21‧‧‧切割膠帶23‧‧‧框架2‧‧‧切割裝置4‧‧‧工作夾台(第2保持台)4a‧‧‧保持面6‧‧‧夾具8‧‧‧切割單元10‧‧‧切割刀12‧‧‧噴嘴14‧‧‧切割液16‧‧‧噴嘴(噴淋噴嘴)22‧‧‧乾式蝕刻裝置(電漿蝕刻裝置)24‧‧‧真空腔室24a‧‧‧開口24b‧‧‧排氣口25‧‧‧遮罩材26‧‧‧閘門28‧‧‧排氣單元30‧‧‧下部電極32、44‧‧‧高頻電源34‧‧‧靜電夾頭(第1保持台)36a、36b‧‧‧電極38a、38b‧‧‧直流電源40‧‧‧上部電極40a‧‧‧氣體噴出孔40b‧‧‧氣體供給孔42‧‧‧氣體供給源
圖1(A)是示意地顯示被加工物的構成例之立體圖,圖1(B)是示意地顯示已對被加工物貼上切割膠帶等的狀態之立體圖。 圖2(A)是用於說明遮罩材形成步驟之局部截面側視圖,圖2(B)是示意地顯示乾式蝕刻裝置的圖。 圖3(A)是示意地顯示在乾式蝕刻步驟中於被加工物上形成有蝕刻溝的狀態的局部截面側視圖,圖3(B)是用於說明第2保持步驟的局部截面側視圖。 圖4是用於說明切割步驟的局部截面側視圖。 圖5是顯示用於供給切割液的另外的態樣之噴嘴的側視圖。
2‧‧‧切割裝置
4‧‧‧工作夾台(第2保持台)
4a‧‧‧保持面
6‧‧‧夾具
11‧‧‧被加工物
11a‧‧‧正面
11b‧‧‧背面
13‧‧‧切斷預定線(切割道)
15‧‧‧器件
17‧‧‧積層體
19a‧‧‧蝕刻溝
21‧‧‧切割膠帶
23‧‧‧框架
25‧‧‧遮罩材
Claims (2)
- 一種加工方法,是對在切斷預定線上重疊而形成有包含金屬之積層體的板狀的被加工物進行加工,該加工方法之特徵在於: 具備以下步驟: 第1保持步驟,以第1保持台保持被加工物之該積層體側; 乾式蝕刻步驟,在實施該第1保持步驟後,隔著設置於該切斷預定線以外的區域之遮罩材對被加工物施行乾式蝕刻,藉此,沿著該切斷預定線以保留該積層體的形式形成蝕刻溝; 第2保持步驟,在實施該乾式蝕刻步驟後,以第2保持台保持被加工物之該積層體側或與該積層體為相反側;以及 切割步驟,在實施該第2保持步驟後,以切割刀切割該蝕刻溝的底部,而沿著該切斷預定線將被加工物與該積層體一起切斷, 在該切割步驟中,是一邊對被加工物供給包含有機酸及氧化劑的切割液一邊進行切割。
- 如請求項1之加工方法,其中在該切割步驟中所使用的是厚度比該蝕刻溝的寬度更薄的該切割刀。
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