CN108695246B - 加工方法 - Google Patents
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- CN108695246B CN108695246B CN201810257275.1A CN201810257275A CN108695246B CN 108695246 B CN108695246 B CN 108695246B CN 201810257275 A CN201810257275 A CN 201810257275A CN 108695246 B CN108695246 B CN 108695246B
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Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
提供一种加工方法,对与切断预定线重叠地形成有包含金属的层叠体的板状被加工物加工时,能够维持加工品质并提高加工速度。其对与切断预定线重叠地形成有包含金属的层叠体的板状被加工物进行加工,包括:第一保持步骤,用第一保持工作台对被加工物的层叠体侧进行保持;干法蚀刻步骤,隔着设置于除切断预定线外的区域的掩模材料对被加工物实施干法蚀刻,沿着切断预定线残留层叠体地形成蚀刻槽;第二保持步骤,用第二保持工作台对被加工物的层叠体侧或其相反侧进行保持;切削步骤,用切削刀具对蚀刻槽的底部进行切削,将被加工物与层叠体一起沿着切断预定线切断,在切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削。
Description
技术领域
本发明涉及用于对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工的加工方法。
背景技术
在以移动电话、个人计算机为代表的电子设备中,具备电子电路等器件的器件芯片成为了必要的构成要素。器件芯片例如如下得到:利用两条以上的切断预定线(间隔道)对由硅等半导体材料形成的晶片的表面进行划分,在各区域形成器件后,沿着该切断预定线将晶片切断,由此得到器件芯片。
近年来,大多在上述那样的晶片的切断预定线上形成被称为TEG(Test ElementsGroup,测试元件组)的评价用元件(参见例如专利文献1、2等),用于评价器件的电特性。通过在切断预定线上形成TEG,能够最大限度地确保器件芯片的取得数,并且能够与晶片的切断同时除去评价后不需要的TEG。
现有技术文献
专利文献
专利文献1:日本特开平6-349926号公报
专利文献2:日本特开2005-21940号公报
发明内容
发明所要解决的课题
但是,若要利用磨粒分散于结合材料中而成的切削刀具对TEG之类的包含金属的层叠体进行切削、除去,则层叠体所含的金属在切削时伸长,容易产生被称为毛刺的突起。并且,若利用切削刀具进行的加工的速度提高,则放热量增加,毛刺也变大。因此,在该方法中,为了不使加工品质降低,需要将加工速度抑制得较低。
本发明是鉴于上述问题而完成的,其目的在于提供一种加工方法,该加工方法在对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工时,能够在维持加工品质的同时提高加工速度。
用于解决课题的手段
根据本发明的一个方式,提供一种加工方法,该加工方法对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工,该加工方法具备下述步骤:第一保持步骤,利用第一保持工作台对被加工物的该层叠体侧进行保持;干法蚀刻步骤,在实施该第一保持步骤后,隔着设置于除该切断预定线外的区域的掩模材料对被加工物实施干法蚀刻,由此沿着该切断预定线以残留该层叠体的方式形成蚀刻槽;第二保持步骤,在实施该干法蚀刻步骤后,利用第二保持工作台对被加工物的该层叠体侧或该层叠体的相反侧进行保持;和切削步骤,在实施该第二保持步骤后,利用切削刀具对该蚀刻槽的底部进行切削,将被加工物与该层叠体一起沿着该切断预定线切断,在该切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削。
在本发明的一个方式中,优选在该切削步骤中使用厚度比该蚀刻槽的宽度薄的该切削刀具。
发明效果
在本发明的一个方式的加工方法中,利用切削刀具对包含金属的层叠体进行切断时,供给包含有机酸和氧化剂的切削液,因此能够一边利用有机酸和氧化剂对金属进行改性而使其延展性降低,一边执行切断。由此,即便提高加工的速度,也能抑制毛刺的产生。即,在维持加工品质的同时提高加工速度。
另外,在本发明的一个方式的加工方法中,隔着设置于除切断预定线外的区域的掩模材料实施干法蚀刻,由此能够沿着全部切断预定线一次性地对被加工物进行加工而形成蚀刻槽,因而在对切断预定线的数量多的被加工物进行加工等情况下,能够在维持加工品质的同时缩短平均每一条切断预定线的加工所需要的时间。即,在维持加工品质的同时提高加工速度。
附图说明
图1的(A)是示意性地示出被加工物的结构例的立体图,图1的(B)是示意性地示出在被加工物上粘贴有划片带等的状态的立体图。
图2的(A)是用于说明掩模材料形成步骤的局部截面侧视图,图2的(B)是示意性地示出干法蚀刻装置的图。
图3的(A)是示意性地示出在干法蚀刻步骤中在被加工物上形成有蚀刻槽的状态的局部截面侧视图,图3的(B)是用于说明第二保持步骤的局部截面侧视图。
图4是用于说明切削步骤的局部截面侧视图。
图5是示出用于供给切削液的其它方式的喷嘴的侧视图。
具体实施方式
参照附图,对本发明的一个方式的实施方式进行说明。本实施方式的加工方法是用于对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工的加工方法,该加工方法包括掩模材料形成步骤(参照图2的(A))、第一保持步骤(参照图2的(B))、干法蚀刻步骤(参照图3的(A))、第二保持步骤(参照图3的(B))以及切削步骤(参照图4)。
在掩模材料形成步骤中,在被加工物的层叠体的相反侧形成掩模材料。该掩模材料形成于除切断预定线外的区域。在第一保持步骤中,以掩模材料露出的方式,利用干法蚀刻装置的静电卡盘(第一保持工作台)对被加工物的层叠体侧进行保持。在干法蚀刻步骤中,隔着掩模材料对被加工物实施干法蚀刻,沿着切断预定线以残留层叠体的方式形成蚀刻槽。
在第二保持步骤中,利用切削装置的卡盘工作台(第二保持工作台)对被加工物的层叠体侧进行保持。在切削步骤中,一边供给包含有机酸和氧化剂的切削液,一边利用切削刀具对蚀刻槽的底部进行切削,将被加工物与层叠体一起沿着切断预定线切断。下面,对本实施方式的加工方法进行详细说明。
图1的(A)是示意性地示出利用本实施方式的加工方法进行加工的被加工物11的结构例的立体图。如图1的(A)所示,本实施方式的被加工物11是使用硅(Si)等半导体材料呈圆盘状地形成的晶片,其表面11a侧被分成中央的器件区域、和包围器件区域的外周剩余区域。
器件区域被呈格子状排列的切断预定线(间隔道)13进一步划分成两个以上的区域,在各区域形成有IC(Integrated Circuit,集成电路)等器件15。另外,在被加工物11的背面11b侧设置有包含金属的层叠体17。该层叠体17例如为由钛(Ti)、镍(Ni)、金(Au)等形成的厚度为几μm左右的多层金属膜,其作为电极等发挥功能。该层叠体17也形成于与切断预定线13重叠的区域。
需要说明的是,在本实施方式中,将由硅等半导体材料形成的圆盘状的晶片作为被加工物11,但对于被加工物11的材质、形状、结构、尺寸等没有限制。同样地,对于器件15或层叠体17的种类、数量、形状、结构、尺寸、配置等也没有限制。例如,也可以使用沿着切断预定线13形成有作为电极发挥功能的层叠体17的封装基板等来作为被加工物11。
图1的(B)是示意性地示出在被加工物11上粘贴有划片带21等的状态的立体图。如图1的(B)所示,在实施本实施方式的加工方法前,将直径大于被加工物11的划片带21粘贴到被加工物11的背面11b侧(层叠体17)。另外,将环状的框架23固定于划片带21的外周部分。
由此,被加工物11借助划片带21而被支承于环状的框架23。需要说明的是,在本实施方式中,以对借助划片带21而被支承于环状的框架23的状态的被加工物11进行加工为例进行说明,但也可以不使用划片带21、框架23而对被加工物11进行加工。
在本实施方式的加工方法中,首先,进行掩模材料形成步骤,形成覆盖被加工物11的表面11a侧(与层叠体17相反一侧)的干法蚀刻用的掩模材料。图2的(A)是用于说明掩模材料形成步骤的局部截面侧视图,其示意性地示出了在被加工物11的表面11a侧形成有掩模材料25的状态。
该掩模材料25例如通过光刻等方法形成,至少对之后的干法蚀刻具有某种程度的耐性。另外,如图2的(A)所示,掩模材料25以切断预定线13(切削槽19a)露出的方式形成。即,掩模材料25设置于除切断预定线13(切削槽19a)外的区域。
在掩模材料形成步骤之后,进行第一保持步骤,利用干法蚀刻装置(等离子体蚀刻装置)的静电卡盘(第一保持工作台)对被加工物11进行保持。图2的(B)是示意性地示出干法蚀刻装置(等离子体蚀刻装置)22的图。干法蚀刻装置22具备内部形成有处理用的空间的真空腔室24。在真空腔室24的侧壁形成有用于搬入、搬出被加工物11的开口24a。
在开口24a的外部设置有用于开闭开口24a的门26。门26与开闭机构(未图示)连结,门26通过该开闭机构进行开闭。打开门26、使开口24a露出,由此能够通过开口24a而将被加工物11搬入至真空腔室24的内部的空间;或者能够将被加工物11从真空腔室24的内部的空间搬出。
在真空腔室24的底壁形成有排气口24b。该排气口24b与真空泵等排气单元28连接。在真空腔室24的空间内配置有下部电极30。下部电极30使用导电性的材料呈圆盘状地形成,在真空腔室24的外部与高频电源32连接。
在下部电极30的上表面配置有静电卡盘34。静电卡盘34例如具备相互绝缘的两个以上的电极36a、36b,通过在各电极36a、36b与被加工物11之间产生的电力来对被加工物11进行吸附、保持。需要说明的是,本实施方式的静电卡盘34构成为能够将直流电源38a的正极与电极36a连接,将直流电源38b的负极与电极36b连接。
在真空腔室24的顶壁隔着绝缘材料安装有上部电极40,该上部电极40使用导电性的材料呈圆盘状地形成。在上部电极40的下表面侧形成有两个以上的气体喷出孔40a,该气体喷出孔40a经由设置于上部电极40的上表面侧的气体供给孔40b等而与气体供给源42连接。由此,能够将干法蚀刻用的原料气体供给到真空腔室24的空间内。该上部电极40也在真空腔室24的外部与高频电源44连接。
在第一保持步骤中,首先,利用开闭机构使门26下降。接着,通过开口24a将被加工物11搬入至真空腔室24的空间内,载置于静电卡盘34。具体而言,使粘贴于被加工物11的背面11b侧(层叠体17)的划片带21与静电卡盘34的上表面接触。之后,若使静电卡盘34工作,则被加工物11以表面11a侧的掩模材料25向上方露出的状态被吸附、保持于静电卡盘34。
在第一保持步骤之后,进行干法蚀刻步骤,隔着掩模材料25对被加工物11实施干法蚀刻(等离子体蚀刻),由此沿着切断预定线13以残留层叠体17的方式形成蚀刻槽。干法蚀刻步骤继续使用干法蚀刻装置22来进行。
具体而言,首先,利用开闭机构使门26上升,将真空腔室24的空间密闭。进而,使排气单元28工作,将空间内减压。在该状态下,若一边以规定的流量从气体供给源42供给干法蚀刻用的原料气体,一边利用高频电源32、44对下部电极30和上部电极40供给适当的高频电力,则在下部电极30与上部电极40之间产生包含自由基或离子等的等离子体。
由此,能够将未被掩模材料25覆盖的被加工物11的表面11a侧(即,切断预定线13(切削槽19a))暴露于等离子体而对被加工物11进行加工。需要说明的是,从气体供给源42供给的干法蚀刻用的原料气体可根据被加工物11的材质等适当选择。通过该干法蚀刻,形成不贯通层叠体17的所期望的深度的蚀刻槽。即,该蚀刻槽沿着切断预定线13以残留层叠体17的方式形成。
图3的(A)是示意性地示出在干法蚀刻步骤中在被加工物11上形成有蚀刻槽19a的状态的局部截面侧视图。需要说明的是,在能够适当除去被加工物11的条件的干法蚀刻中,通常基本上不能除去包含金属的层叠体17。由此,即便干法蚀刻的时间略长,与切断预定线13重叠的层叠体17也不会消失。
在该干法蚀刻步骤中,能够沿着全部切断预定线13一次性地对被加工物11进行加工而形成蚀刻槽19a,因而在对切断预定线13的数量多的被加工物11进行加工等情况下,能够在维持加工品质的同时缩短平均每一条切断预定线13的加工所需要的时间。需要说明的是,在干法蚀刻步骤之后,利用灰化等方法将掩模材料25除去。
在干法蚀刻步骤之后,进行第二保持步骤,利用切削装置的卡盘工作台(第二保持工作台)对被加工物11进行保持。图3的(B)是用于说明第二保持步骤的局部截面侧视图。第二保持步骤例如使用图3的(B)所示的切削装置2来进行。切削装置2具备用于吸引、保持被加工物11的卡盘工作台(第二保持工作台)4。
卡盘工作台4与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴旋转。另外,在卡盘工作台4的下方设置有加工进给机构(未图示),卡盘工作台4通过该加工进给机构在加工进给方向上移动。
卡盘工作台4的上表面的一部分成为用于吸引、保持被加工物11(划片带21)的保持面4a。保持面4a通过形成于卡盘工作台4的内部的吸引路(未图示)等与吸引源(未图示)连接。通过使吸引源的负压作用于保持面4a,被加工物11被吸引、保持于卡盘工作台4。在该卡盘工作台4的周围设置有用于固定环状的框架23的两个以上的夹具6。
在第二保持步骤中,首先,使粘贴于被加工物11的背面11b侧(层叠体17)的划片带21与卡盘工作台4的保持面4a接触,并作用吸引源的负压。并且,利用夹具6固定框架23。由此,被加工物11以表面11a侧的层叠体17向上方露出的状态被保持于卡盘工作台4和夹具6。
在第二保持步骤之后,进行切削步骤,对蚀刻槽19a的底部进行切削,将被加工物11与层叠体17一起沿着切断预定线13切断。图4是用于说明切削步骤的局部截面侧视图。切削步骤继续使用切削装置2来进行。如图4所示,切削装置2进一步具备配置于卡盘工作台4的上方的切削单元8。
切削单元8具备与加工进给方向大致垂直的作为旋转轴的主轴(未图示)。在主轴的一端侧安装有磨粒分散于结合材料中而成的环状的切削刀具10。在主轴的另一端侧连结有电动机等旋转驱动源(未图示),安装于主轴的一端侧的切削刀具10通过从该旋转驱动源传递的力而旋转。需要说明的是,在本实施方式的切削步骤中,使用厚度比蚀刻槽19a的宽度薄的切削刀具10。
另外,主轴由移动机构(未图示)支承。切削刀具10通过该移动机构在与加工进给方向垂直的分度进给方向以及铅垂方向(与加工进给方向和分度进给方向垂直的方向)上移动。在切削刀具10的侧方以夹持切削刀具10的方式配置有一对喷嘴12。喷嘴12构成为能够对切削刀具10、被加工物11供给切削液14。
在切削步骤中,首先使卡盘工作台4旋转,使作为对象的蚀刻槽19a(切断预定线13)的延伸方向与切削装置2的加工进给方向对齐。并且,使卡盘工作台4和切削单元8相对地移动,使切削刀具10的位置对齐在作为对象的蚀刻槽19a(切断预定线13)的延长线上。然后,使切削刀具10的下端移动至低于层叠体17的下表面的位置。
然后,一边使切削刀具10旋转一边使卡盘工作台4在加工进给方向上移动。并且,从喷嘴12对切削刀具10和被加工物11供给包含有机酸和氧化剂的切削液14。由此,能够使切削刀具10沿着对象的蚀刻槽19a(切断预定线13)切入,将被加工物11与层叠体17一起完全切断,形成切缝(切口)19b。
如本实施方式那样,通过使切削液14包含有机酸,能够对层叠体17中的金属进行改性而抑制其延展性。另外,通过使切削液14包含氧化剂,层叠体17中的金属的表面容易发生氧化。其结果是,可充分降低层叠体17中的金属的延展性,提高加工性。
作为切削液14所含的有机酸,可以使用例如在分子内具有至少1个羧基和至少1个氨基的化合物。这种情况下,优选氨基中的至少1个为仲氨基或叔氨基。另外,作为有机酸使用的化合物可以具有取代基。
作为可用作有机酸的氨基酸,可以举出甘氨酸、二羟基乙基甘氨酸、双甘氨肽、羟基乙基甘氨酸、N-甲基甘氨酸、β-丙氨酸、L-丙氨酸、L-2-氨基丁酸、L-正缬氨酸、L-缬氨酸、L-亮氨酸、L-正亮氨酸、L-别异亮氨酸、L-异亮氨酸、L-苯丙氨酸、L-脯氨酸、肌氨酸、L-鸟氨酸、L-赖氨酸、牛磺酸、L-丝氨酸、L-苏氨酸、L-别苏氨酸、L-高丝氨酸、L-甲状腺素、L-酪氨酸、3,5-二碘-L-酪氨酸、β-(3,4-二羟基苯基)-L-丙氨酸、4-羟基-L-脯氨酸、L-半胱氨酸、L-甲硫氨酸、L-乙硫氨酸、L-羊毛硫氨酸、L-胱硫醚、L-胱氨酸、L-磺基丙氨酸、L-谷氨酸、L-天冬氨酸、S-(羧甲基)-L-半胱氨酸、4-氨基丁酸、L-天冬酰胺、L-谷氨酰胺、氮杂丝氨酸、L-刀豆氨酸、L-瓜氨酸、L-精氨酸、δ-羟基-L-赖氨酸、甲胍基乙酸、L-犬尿氨素、L-组氨酸、1-甲基-L-组氨酸、3-甲基-L-组氨酸、L-色氨酸、放线菌素C1、麦角硫因、蜂毒明肽、血管紧张素I、血管紧张素II和抗痛素等。其中,优选甘氨酸、L-丙氨酸、L-脯氨酸、L-组氨酸、L-赖氨酸、二羟基乙基甘氨酸。
另外,作为可用作有机酸的氨基多元酸,可以举出亚氨基二乙酸、次氮基三乙酸、二亚乙基三胺五乙酸、乙二胺四乙酸、羟基乙基亚氨基二乙酸、次氮基三亚甲基膦酸、乙二胺-N,N,N’,N’-四亚甲基磺酸、1,2-二氨基丙烷四乙酸、乙二醇醚二胺四乙酸、反式环己烷二胺四乙酸、乙二胺邻羟基苯基乙酸、乙二胺二琥珀酸(SS体)、β-丙氨酸二乙酸、N-(2-羧酸乙基)-L-天冬氨酸、N,N’-双(2-羟基苄基)乙二胺-N,N’-二乙酸等。
此外,作为可用作有机酸的羧酸,可以举出甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、苹果酸、琥珀酸、庚二酸、巯基乙酸、乙醛酸、氯乙酸、乙酰甲酸、乙酰乙酸、戊二酸等饱和羧酸;丙烯酸、甲基丙烯酸、丁烯酸、富马酸、马来酸、中康酸、柠康酸、乌头酸等不饱和羧酸;苯甲酸类、甲基苯甲酸、邻苯二甲酸类、萘甲酸类、均苯四甲酸、萘二酸等环状不饱和羧酸等。
作为切削液14所含的氧化剂,可以使用例如过氧化氢、过氧化物、硝酸盐、碘酸盐、高碘酸盐、次氯酸盐、亚氯酸盐、氯酸盐、高氯酸盐、过硫酸盐、重铬酸盐、高锰酸盐、铈酸盐、钒酸盐、臭氧水和银(II)盐、铁(III)盐及其有机络盐等。
另外,可以在切削液14中混合防蚀剂。通过混合防蚀剂,能够防止被加工物11所含的金属的腐蚀(溶出)。作为防蚀剂,优选使用例如在分子内具有3个以上氮原子且具有稠环结构的芳杂环化合物、或者在分子内具有4个以上氮原子的芳杂环化合物。此外,芳香环化合物优选包含羧基、磺基、羟基、烷氧基。具体而言,优选为四唑衍生物、1,2,3-三唑衍生物以及1,2,4-三唑衍生物。
作为可用作防蚀剂的四唑衍生物,可以举出:在形成四唑环的氮原子上不具有取代基并且在四唑的5位上导入有选自由磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基的物质。
另外,作为可用作防蚀剂的1,2,3-三唑衍生物,可以举出在形成1,2,3-三唑环的氮原子上不具有取代基并且在1,2,3-三唑的4位和/或5位上导入有选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基或芳基的物质。
另外,作为可用作防蚀剂的1,2,4-三唑衍生物,可以举出在形成1,2,4-三唑环的氮原子上不具有取代基并且在1,2,4-三唑的2位和/或5位上导入有选自由磺基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基或芳基的物质。
重复上述步骤,若沿着全部蚀刻槽19a(切断预定线13)形成切缝19b,则切削步骤结束。在本实施方式中,一边向被加工物11供给包含有机酸和氧化剂的切削液14一边执行切削,因此能够一边对层叠体17所含的金属进行改性而使其延展性降低,一边执行切削。由此,即便提高加工的速度,也能抑制毛刺的产生。
另外,在本实施方式中,使用了厚度比蚀刻槽19a的宽度薄的切削刀具10,因此在蚀刻槽19a与切削刀具10之间容易存积切削液14。其结果是,能够将足够量的切削液14供给到层叠体17,能够进一步提高被加工物11的加工性。
如上所述,在本实施方式的加工方法中,在利用切削刀具10对包含金属的层叠体17进行切断时,供给包含有机酸和氧化剂的切削液14,因此能够一边利用有机酸和氧化剂对金属进行改性而使其延展性降低,一边执行切断。由此,即便提高加工的速度,也能抑制毛刺的产生。即,能够在维持加工品质的同时提高加工速度。
另外,在本实施方式的加工方法中,隔着设置于除切断预定线13外的区域的掩模材料25实施干法蚀刻,由此能够沿着全部切断预定线13一次性地对被加工物11进行加工而形成蚀刻槽19a,因而在对切断预定线13的数量多的被加工物11进行加工等情况下,能够在维持加工品质的同时缩短平均每一条切断预定线13的加工所需要的时间。即,在维持加工品质的同时提高加工速度。
需要说明的是,本发明不限于上述实施方式的记载,可以进行各种变更来实施。例如,在上述实施方式中,对在背面11b侧形成有包含金属的层叠体17的被加工物11进行了加工,但也可以对在表面侧形成有包含金属的层叠体的被加工物进行加工。需要说明的是,作为这样的被加工物,可以举出例如下述晶片等,其在表面侧的与切断预定线重叠的位置上具备包含被称为TEG(Test Elements Group,测试元件组)等评价用元件的层叠体。
另外,在上述实施方式中,使切削刀具10从被加工物11的表面11a侧切入,但也可以使切削刀具10从被加工物11的背面11b侧切入。其中,该情况下,需要在剥离划片带21后利用卡盘工作台4对被加工物11的表面11a侧进行保持,使被加工物11的背面11b侧向上方露出。
另外,在上述切削步骤中,从夹持切削刀具10的一对喷嘴12供给了切削液14,但对于用于供给切削液14的喷嘴的方式没有特别限制。图5是示出用于供给切削液14的其它方式的喷嘴的侧视图。如图5所示,变形例的切削单元8除了具有切削刀具10和一对喷嘴12以外,还具有配置于切削刀具10的前方(或后方)的喷嘴(喷淋喷嘴)16。
通过从该喷嘴16供给切削液14,容易将切削液14供给到切缝(切口)19b,能够更有效地对层叠体17中的金属进行改性。特别是,如图5所示,若使喷嘴16的喷射口朝向斜下方(例如,切削刀具10的加工点附近),则能够向切缝19b供给、填充大量的切削液14,能够更有效地对层叠体17中的金属进行改性,因而是优选的。需要说明的是,图5中使用了一对喷嘴12以及喷嘴16,但也可以仅单独使用喷嘴16。
此外,上述实施方式的结构、方法等可以在不脱离本发明目的的范围内适当变更并实施。
符号说明
11 被加工物
11a 表面
11b 背面
13 切断预定线(间隔道)
15 器件
17 层叠体
19a 蚀刻槽
19b 切缝(切口)
21 划片带
23 框架
25 掩模材料
2 切削装置
4 卡盘工作台(第二保持工作台)
4a 保持面
6 夹具
8 切削单元
10 切削刀具
12 喷嘴
14 切削液
16 喷嘴(喷淋喷嘴)
22 干法蚀刻装置(等离子体蚀刻装置)
24 真空腔室
24a 开口
24b 排气口
26 门
28 排气单元
30 下部电极
32 高频电源
34 静电卡盘(第一保持工作台)
36a、36b 电极
38a、38b 直流电源
40 上部电极
40a 气体喷出孔
40b 气体供给孔
42 气体供给源
44 高频电源
Claims (2)
1.一种加工方法,该加工方法对包含晶片以及与切断预定线重叠地形成的包含金属的层叠体的板状的被加工物进行加工,其特征在于,
该加工方法具备下述步骤:
第一保持步骤,利用第一保持工作台对被加工物的该层叠体侧进行保持;
干法蚀刻步骤,在实施该第一保持步骤后,隔着设置于除该切断预定线外的区域的掩模材料对被加工物实施干法蚀刻,由此沿着该切断预定线以残留该层叠体的方式形成蚀刻槽,该蚀刻槽贯通该晶片的表面和背面,使该层叠体在该蚀刻槽的侧壁间的底部露出;
第二保持步骤,在实施该干法蚀刻步骤后,利用第二保持工作台对被加工物的该层叠体侧进行保持;和
切削步骤,在实施该第二保持步骤后,利用切削刀具对该蚀刻槽的底部进行切削,将被加工物与该层叠体一起沿着该切断预定线切断,
在该切削步骤中,一边对在该蚀刻槽的侧壁间的底部露出的该层叠体供给包含有机酸和氧化剂的切削液,一边执行切削,
从构成为喷射口朝向所述切削刀具的加工点的喷嘴以朝向所述切削刀具的加工点的状态供给所述切削液。
2.如权利要求1所述的加工方法,其特征在于,
在该切削步骤中,使用厚度比该蚀刻槽的宽度薄的该切削刀具。
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TWI733994B (zh) | 2021-07-21 |
KR102475490B1 (ko) | 2022-12-07 |
KR20180112688A (ko) | 2018-10-12 |
TW201838754A (zh) | 2018-11-01 |
CN108695246A (zh) | 2018-10-23 |
DE102018205026A1 (de) | 2018-10-04 |
US20180286690A1 (en) | 2018-10-04 |
JP2018181904A (ja) | 2018-11-15 |
SG10201802544PA (en) | 2018-11-29 |
JP6824581B2 (ja) | 2021-02-03 |
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