SG10201802544PA - Method of processing workpiece - Google Patents

Method of processing workpiece

Info

Publication number
SG10201802544PA
SG10201802544PA SG10201802544PA SG10201802544PA SG10201802544PA SG 10201802544P A SG10201802544P A SG 10201802544PA SG 10201802544P A SG10201802544P A SG 10201802544PA SG 10201802544P A SG10201802544P A SG 10201802544PA SG 10201802544P A SG10201802544P A SG 10201802544PA
Authority
SG
Singapore
Prior art keywords
workpiece
layered body
cutting
dicing lines
etched grooves
Prior art date
Application number
SG10201802544PA
Inventor
Takenouchi Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201802544PA publication Critical patent/SG10201802544PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

METHOD OF PROCESSING WORKPIECE A method of processing a plate-shaped workpiece that includes a layered body containing metal which is formed in superposed relation to projected dicing lines includes the steps of holding a layered body side of the workpiece on a first holding table, thereafter, performing dry etching on the workpiece through a mask disposed in areas that are exclusive of the projected dicing lines thereby to form etched grooves in the workpiece along the projected dicing lines in a manner to leave the layered body unremoved, thereafter, holding the layered body side of the workpiece or a side of the workpiece which is opposite the layered body side thereof on a second holding table, and thereafter, cutting bottoms of the etched grooves with a cutting blade to sever the workpiece and the layered body along the projected dicing lines. The step of cutting the bottoms of the etched grooves includes the step of cutting the bottoms of the etched grooves while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece. (Figure 3A)
SG10201802544PA 2017-04-04 2018-03-27 Method of processing workpiece SG10201802544PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017074251A JP6824581B2 (en) 2017-04-04 2017-04-04 Processing method

Publications (1)

Publication Number Publication Date
SG10201802544PA true SG10201802544PA (en) 2018-11-29

Family

ID=63525616

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201802544PA SG10201802544PA (en) 2017-04-04 2018-03-27 Method of processing workpiece

Country Status (7)

Country Link
US (1) US20180286690A1 (en)
JP (1) JP6824581B2 (en)
KR (1) KR102475490B1 (en)
CN (1) CN108695246B (en)
DE (1) DE102018205026A1 (en)
SG (1) SG10201802544PA (en)
TW (1) TWI733994B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7442927B2 (en) * 2019-08-06 2024-03-05 株式会社ディスコ Chip manufacturing method
CN113990748B (en) * 2021-12-28 2022-08-30 江苏长晶浦联功率半导体有限公司 Wafer cutting protection method and wafer with cutting protection ring

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6349926A (en) 1986-08-20 1988-03-02 Nec Corp Parallel execution system for plural sort processing
JPH06349926A (en) 1993-06-12 1994-12-22 Hitachi Ltd Semiconductor device
US5461008A (en) * 1994-05-26 1995-10-24 Delco Electronics Corporatinon Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers
JPH0832110A (en) * 1994-07-19 1996-02-02 Oki Electric Ind Co Ltd Edge emission type led, manufacture of edge emission type light emitting element, and method for measuring light emitting characteristic of edge emission type light emitting element
US5904548A (en) * 1996-11-21 1999-05-18 Texas Instruments Incorporated Trench scribe line for decreased chip spacing
JP2001338927A (en) * 2000-05-29 2001-12-07 Sony Corp Method of manufacturing semiconductor device
JP2002231658A (en) * 2001-01-30 2002-08-16 Takemoto Denki Seisakusho:Kk Method for cutting semiconductor wafer
US7087452B2 (en) * 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP4231349B2 (en) 2003-07-02 2009-02-25 株式会社ディスコ Laser processing method and laser processing apparatus
JP2005142399A (en) * 2003-11-07 2005-06-02 Tokyo Seimitsu Co Ltd Dicing method
JP4751634B2 (en) * 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US20080191318A1 (en) * 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
JP5197586B2 (en) * 2007-05-25 2013-05-15 浜松ホトニクス株式会社 Cutting method
JP2009016420A (en) 2007-07-02 2009-01-22 Renesas Technology Corp Method of manufacturing semiconductor device
JP5605033B2 (en) * 2010-07-09 2014-10-15 豊田合成株式会社 Light emitting diode manufacturing method, cutting method, and light emitting diode
IT1402530B1 (en) * 2010-10-25 2013-09-13 St Microelectronics Srl INTEGRATED CIRCUITS WITH RE-METALLIZATION AND RELATED PRODUCTION METHOD.
JP5473879B2 (en) 2010-12-06 2014-04-16 パナソニック株式会社 Semiconductor wafer dicing line processing method and semiconductor chip manufacturing method
US8952413B2 (en) * 2012-03-08 2015-02-10 Micron Technology, Inc. Etched trenches in bond materials for die singulation, and associated systems and methods
US8652940B2 (en) * 2012-04-10 2014-02-18 Applied Materials, Inc. Wafer dicing used hybrid multi-step laser scribing process with plasma etch
US9368404B2 (en) * 2012-09-28 2016-06-14 Plasma-Therm Llc Method for dicing a substrate with back metal
JP2014120494A (en) * 2012-12-13 2014-06-30 Disco Abrasive Syst Ltd Wafer processing method
JP6219565B2 (en) * 2012-12-26 2017-10-25 株式会社ディスコ Wafer processing method
JP5637330B1 (en) * 2013-07-01 2014-12-10 富士ゼロックス株式会社 Semiconductor piece manufacturing method, circuit board including semiconductor piece, and image forming apparatus
US9224650B2 (en) 2013-09-19 2015-12-29 Applied Materials, Inc. Wafer dicing from wafer backside and front side
JP2015095508A (en) 2013-11-11 2015-05-18 株式会社ディスコ Method for processing wafer
CN104766793B (en) * 2014-01-03 2017-10-31 北大方正集团有限公司 A kind of acid tank back side silicon caustic solution
JP6262006B2 (en) * 2014-02-10 2018-01-17 株式会社ディスコ Wafer processing method and processing apparatus
JP6385085B2 (en) * 2014-03-14 2018-09-05 株式会社ディスコ Tool cutting method
JP6274926B2 (en) * 2014-03-17 2018-02-07 株式会社ディスコ Cutting method
JP6377449B2 (en) 2014-08-12 2018-08-22 株式会社ディスコ Wafer division method
JP6426407B2 (en) * 2014-09-03 2018-11-21 株式会社ディスコ Wafer processing method
JP6305355B2 (en) * 2015-01-28 2018-04-04 株式会社東芝 Device manufacturing method
JP6576735B2 (en) * 2015-08-19 2019-09-18 株式会社ディスコ Wafer division method
JP6521815B2 (en) * 2015-09-25 2019-05-29 株式会社ディスコ Processing method of workpiece

Also Published As

Publication number Publication date
US20180286690A1 (en) 2018-10-04
TW201838754A (en) 2018-11-01
KR102475490B1 (en) 2022-12-07
DE102018205026A1 (en) 2018-10-04
CN108695246B (en) 2023-08-15
CN108695246A (en) 2018-10-23
JP6824581B2 (en) 2021-02-03
JP2018181904A (en) 2018-11-15
KR20180112688A (en) 2018-10-12
TWI733994B (en) 2021-07-21

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