JP2018037434A - 半導体装置およびその製造方法 - Google Patents
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Abstract
Description
(実施の形態1)
図1に示されるように、本実施の形態の半導体装置は、出力パワー素子部OPと、インターフェース・ロジック回路ILと、モニター回路MCと、保護回路PRCと、駆動用ロジック回路DLCと、電源PSと、複数のパッドPDとを主に有している。
次に、本実施の形態の作用効果について、図11〜図13に示す比較例と対比して説明する。
図14に示されるように、本実施の形態の構成は、実施の形態1の構成と比較して、パワー素子部における側壁導電層SWCの構成において異なっている。具体的には、本実施の形態の側壁導電層SWCは、ビアホールVH1の底壁面の全体を覆っている。側壁導電層SWCは、ビアホールVH1の底壁面に位置する第1バリアメタル層BM2の全体を覆っている。
(実施の形態3)
図16に示されるように、本実施の形態の構成は、実施の形態1の構成と比較して、パワー素子部におけるビアホールVH1内に、他の側壁導電層SWC2(第4導電膜)が形成されている点において異なっている。具体的には、本実施の形態の他の側壁導電層SWC2は、サイドウォールスペーサ形状を有し、かつ側壁導電層SWCの側部に接している。
なお図19に示されるように、他の側壁導電層SWC2が、ビアホールVH1の底壁面の全体を覆っていてもよい。つまり他の側壁導電層SWC2は、ビアホールVH1の底壁面に位置する第2バリアメタル層BM2の全体を覆っている。
上述した実施の形態1〜3の構成の各々において、第2の金属配線層M2にエアギャップが形成されていてもよい。図20は、実施の形態1における第2の金属配線層M2にエアギャップAGが形成された状態を示す図である。図21は、実施の形態2における第2の金属配線層M2にエアギャップAGが形成された状態を示す図である。図22は、実施の形態3における第2の金属配線層M2にエアギャップAGが形成された状態を示す図である。図20〜図22に示されるように、エアギャップAGはビアホールVH1の真上に形成されている。
Claims (13)
- 第1貫通孔および第2貫通孔を有する絶縁膜と、
前記第1貫通孔の側壁面に沿う第1側壁部分を有し、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる1種以上を含む第1導電膜と、
前記第1貫通孔を埋め込み、かつアルミニウムを含む第2導電膜と、
前記第2貫通孔を埋め込み、かつ第3導電膜とを備えた、半導体装置。 - 前記第1貫通孔の底壁面の一部は前記第1導電膜から露出している、請求項1に記載の半導体装置。
- 前記第1導電膜は、前記第1貫通孔の底壁面の全体を覆う、請求項1に記載の半導体装置。
- 前記第1導電膜の最も薄い部分の厚みは、前記第1貫通孔の深さの1/2以下である、請求項3に記載の半導体装置。
- 前記第1導電膜の前記第1側壁部分の側部に接する第2の側壁部分を有する第4導電膜をさらに備えた、請求項1に記載の半導体装置。
- 前記第1貫通孔がパワー素子の真上領域に配置されている、請求項1に記載の半導体装置。
- 前記第2貫通孔がロジック素子の真上領域に配置されている、請求項6に記載の半導体装置。
- 第1貫通孔および第2貫通孔を有する絶縁膜を形成する工程と、
前記第1貫通孔の側壁面に沿う側壁部分を有し、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる1種以上を含む第1導電膜を形成する工程と、
前記第1貫通孔を埋め込み、かつアルミニウムを含む第2導電膜を形成する工程と、
前記第2貫通孔を埋め込み、かつタングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる1種以上を含む第3導電膜を形成する工程とを備えた、半導体装置の製造方法。 - 前記第1貫通孔および前記第2貫通孔の各々の壁面に沿うように、タングステン、チタン、窒化チタン、タンタルおよびモリブデンよりなる群から選ばれる1種以上を含む被覆導電膜を形成し、前記被覆導電膜を全面エッチバックすることにより前記第1導電膜と前記第3導電膜とを形成する、請求項8に記載の半導体装置の製造方法。
- 前記被覆導電膜のエッチバックは前記第1貫通孔の底壁面が前記被覆導電膜から少なくとも露出するまで行われる、請求項9に記載の半導体装置の製造方法。
- 前記被覆導電膜のエッチバックは前記第1貫通孔の底壁面が前記被覆導電膜から露出する前に終了する、請求項9に記載の半導体装置の製造方法。
- 前記被覆導電膜のエッチバックは前記第1導電膜の最も薄い部分の厚みが前記第1貫通孔の深さの1/2以下になるまで行われる、請求項11に記載の半導体装置の製造方法。
- 前記第1貫通孔の幅が前記第2貫通孔の幅より大きくなるように前記第1貫通孔と前記第2貫通孔とが形成される、請求項9に記載の半導体装置の製造方法。
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JP2016166580A JP6692258B2 (ja) | 2016-08-29 | 2016-08-29 | 半導体装置およびその製造方法 |
US15/640,042 US20180061769A1 (en) | 2016-08-29 | 2017-06-30 | Semiconductor device and method of manufacturing the same |
CN201710668355.1A CN107799500B (zh) | 2016-08-29 | 2017-08-08 | 半导体装置以及制造该半导体装置的方法 |
TW106127520A TWI741005B (zh) | 2016-08-29 | 2017-08-15 | 半導體裝置及其製造方法 |
KR1020170108428A KR20180025231A (ko) | 2016-08-29 | 2017-08-28 | 반도체 장치 및 그 제조 방법 |
US16/668,802 US11594489B2 (en) | 2016-08-29 | 2019-10-30 | Semiconductor device and method of manufacturing the same |
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2016
- 2016-08-29 JP JP2016166580A patent/JP6692258B2/ja active Active
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2017
- 2017-06-30 US US15/640,042 patent/US20180061769A1/en not_active Abandoned
- 2017-08-08 CN CN201710668355.1A patent/CN107799500B/zh active Active
- 2017-08-15 TW TW106127520A patent/TWI741005B/zh active
- 2017-08-28 KR KR1020170108428A patent/KR20180025231A/ko unknown
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US11594489B2 (en) | 2023-02-28 |
TW201820578A (zh) | 2018-06-01 |
CN107799500B (zh) | 2023-08-18 |
TWI741005B (zh) | 2021-10-01 |
KR20180025231A (ko) | 2018-03-08 |
CN107799500A (zh) | 2018-03-13 |
US20200066646A1 (en) | 2020-02-27 |
US20180061769A1 (en) | 2018-03-01 |
JP6692258B2 (ja) | 2020-05-13 |
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