JP2018029180A - 撮像ユニット、撮像装置、基板、および電子機器 - Google Patents
撮像ユニット、撮像装置、基板、および電子機器 Download PDFInfo
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Abstract
【解決手段】撮像チップ100及びカバーブラス160を備える撮像ユニット10において、コア基板120は、第1絶縁層124と、第1絶縁層の弾性率とは異なる弾性率を有する第2絶縁層136と、第1絶縁層および第2絶縁層に挟まれ、第1絶縁層および第2絶縁層よりも剛性の高い芯層123と、を備える。
【選択図】図1
Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2011−59272号公報
[特許文献2] 特開2012−028496号公報
図1は、第1実施形態に係る撮像ユニット10の模式断面図である。撮像ユニット10は、撮像チップ100と、コア基板120と、環囲部材140と、光学素子の一例としてのカバーガラス160と、電子部品180とを含んで構成される。
図8は、第2実施形態に係る撮像ユニット10の模式斜視図である。撮像ユニット10は、撮像チップ100と、コア基板120と、環囲部材140と、光学素子の一例としてのカバーガラス160とを含んで構成される。図8は、図面を見易くする目的でカバーガラス160が取り外された状態を示している。被写体光束が撮像チップ100へ入射する方向をz軸方向とする。撮像チップ100の長手方向をx軸方向、短手方向をy軸方向とする。なお、コア基板120の一側面(紙面の右側側面)から伸延部151が外側へ伸延する方向をx軸プラス方向とし、x軸プラス方向と逆方向をx軸マイナス方向とする。
第2実施形態で上述したように、撮像ユニットの部品実装面にはコネクタだけでなくバイパスコンデンサが配置されている。そのため、バイパスコンデンサを部品実装面に実装する場合は、バイパスコンデンサの実装面積を確保する必要がある。第3実施形態の撮像ユニットは、バイパスコンデンサの数を減らすことで電子部品の実装面積を確保しつつ、電源も安定させることが可能となる。
Claims (23)
- 被写体を撮像する撮像チップと、
前記撮像チップを駆動させるための電子部品と、
第1弾性率を有し、前記撮像チップが配置される第1層と、前記第1弾性率とは異なる第2弾性率を有し、前記電子部品が配置される第2層と、前記第1層および前記第2層に挟まれ、前記第1層および前記第2層よりも剛性の高い第3層と、を有する基板と、
を備える撮像ユニット。 - 前記第1層は、前記撮像チップに接続される第1配線を含み、
前記第2層は、前記電子部品に接続される第2配線を含む請求項1に記載の撮像ユニット。 - 前記第1配線は、前記第3層の外縁よりも外側へ伸延した伸延部を有する、請求項2に記載の撮像ユニット。
- 前記第1弾性率は、前記第2弾性率よりも低い請求項1から請求項3のいずれか一項に記載の撮像ユニット。
- 前記電子部品は、前記撮像チップよりも小さい請求項4に記載の撮像ユニット。
- 前記電子部品は、前記撮像チップを駆動させる能動素子を含む請求項5に記載の撮像ユニット。
- 前記能動素子は、前記撮像チップに電力を供給する電源回路の少なくとも一部を構成する請求項6に記載の撮像ユニット。
- 前記第1層は、前記撮像チップで発生した熱を前記第3層に伝える伝熱部を含む請求項1から請求項7のいずれか一項に記載の撮像ユニット。
- 前記伝熱部は、貫通孔を有する請求項8に記載の撮像ユニット。
- 前記第1層および前記第2層の少なくともいずれか一方の層は、ガラスクロスに熱硬化性樹脂を含浸させて形成される請求項1から請求項9のいずれか一項に記載の撮像ユニット。
- 前記第2層および前記第3層の間に配置され、前記第1層および前記第2層よりも剛性の高い第4層を備える請求項1から請求項10のいずれか一項に記載の撮像ユニット。
- 前記第3層および前記第4層の間に配置され、前記第3層および前記第4層よりも熱伝導率の低い第5層とを備える請求項11に記載の撮像ユニット。
- 前記第3層の熱伝導率は、前記第4層の熱伝導率よりも大きい請求項12に記載の撮像ユニット。
- 前記第4層の比熱容量は、前記第3層の比熱容量よりも大きい請求項12又は請求項13に記載の撮像ユニット。
- 請求項1から請求項14のいずれか一項に記載の撮像ユニットを備える撮像装置。
- 第1弾性率を有する第1層と、
前記第1弾性率とは異なる第2弾性率を有する第2層と、
前記第1層および前記第2層の間に配置され、前記第1層および前記第2層よりも高い剛性を有する第3層と、
前記第2層および前記第3層の間に配置され、前記第1層および前記第2層よりも高い剛性を有する第4層と、を備え、
前記第3層の熱伝導率は、前記第4層の熱伝導率よりも高い基板。 - 第1弾性率を有する第1層と、
前記第1弾性率とは異なる第2弾性率を有する第2層と、
前記第1層および前記第2層の間に配置され、前記第1層および前記第2層よりも高い剛性を有する第3層と、
前記第2層および前記第3層の間に配置され、前記第1層および前記第2層よりも高い剛性を有する第4層と、を備え、
前記第4層の比熱容量は、前記第3層の比熱容量よりも高い基板。 - 前記第3層および前記第4層に挟まれ、前記第3層および前記第4層よりも低い熱伝導率を有する第5層を備える請求項16又は請求項17に記載の基板。
- 前記第1層および前記第2層の少なくともいずれか一方の層は、ガラスクロスに熱硬化性樹脂を含浸させて形成される請求項16から請求項18のいずれか一項に記載の基板。
- 前記第1層は、電子部品に接続される配線を含む請求項16から請求項19のいずれか一項に記載の基板。
- 前記第1層は、半導体素子に接続される配線を含む請求項16から請求項19のいずれか一項に記載の基板。
- 前記配線は、前記第3層の外縁よりも外側へ伸延した伸延部を有する請求項20または請求項21に記載の基板。
- 請求項16から請求項22のいずれか一項に記載の基板を備える電子機器。
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