JP2018026518A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

Info

Publication number
JP2018026518A
JP2018026518A JP2017016330A JP2017016330A JP2018026518A JP 2018026518 A JP2018026518 A JP 2018026518A JP 2017016330 A JP2017016330 A JP 2017016330A JP 2017016330 A JP2017016330 A JP 2017016330A JP 2018026518 A JP2018026518 A JP 2018026518A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
contact
region
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017016330A
Other languages
English (en)
Japanese (ja)
Inventor
哲章 内海
Tetsuaki Uchiumi
哲章 内海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Toshiba Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Priority to TW106122186A priority Critical patent/TWI647816B/zh
Priority to TW111131898A priority patent/TW202315055A/zh
Priority to TW107134997A priority patent/TWI778143B/zh
Priority to CN202110494881.7A priority patent/CN113241348B/zh
Priority to CN201710541259.0A priority patent/CN107731826B/zh
Priority to US15/646,780 priority patent/US10276585B2/en
Publication of JP2018026518A publication Critical patent/JP2018026518A/ja
Priority to US16/397,052 priority patent/US10672782B2/en
Priority to US16/857,647 priority patent/US11081492B2/en
Priority to US17/376,856 priority patent/US11903210B2/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2017016330A 2016-08-12 2017-01-31 半導体記憶装置 Pending JP2018026518A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
TW106122186A TWI647816B (zh) 2016-08-12 2017-07-03 Semiconductor memory device
TW111131898A TW202315055A (zh) 2016-08-12 2017-07-03 半導體記憶裝置
TW107134997A TWI778143B (zh) 2016-08-12 2017-07-03 半導體記憶裝置
CN202110494881.7A CN113241348B (zh) 2016-08-12 2017-07-05 半导体存储装置
CN201710541259.0A CN107731826B (zh) 2016-08-12 2017-07-05 半导体存储装置
US15/646,780 US10276585B2 (en) 2016-08-12 2017-07-11 Semiconductor memory device
US16/397,052 US10672782B2 (en) 2016-08-12 2019-04-29 Semiconductor memory device
US16/857,647 US11081492B2 (en) 2016-08-12 2020-04-24 Semiconductor memory device
US17/376,856 US11903210B2 (en) 2016-08-12 2021-07-15 Semiconductor memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662374034P 2016-08-12 2016-08-12
US62/374,034 2016-08-12

Publications (1)

Publication Number Publication Date
JP2018026518A true JP2018026518A (ja) 2018-02-15

Family

ID=61194687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017016330A Pending JP2018026518A (ja) 2016-08-12 2017-01-31 半導体記憶装置

Country Status (3)

Country Link
JP (1) JP2018026518A (zh)
CN (2) CN113241348B (zh)
TW (3) TWI647816B (zh)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019087747A (ja) * 2017-11-07 2019-06-06 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ３次元半導体メモリ装置
JP2019161059A (ja) * 2018-03-14 2019-09-19 東芝メモリ株式会社 半導体記憶装置
CN111613620A (zh) * 2019-02-26 2020-09-01 东芝存储器株式会社 半导体存储装置
US10832776B2 (en) 2018-10-19 2020-11-10 Toshiba Memory Corporation Semiconductor device and semiconductor memory device
KR20200133796A (ko) * 2018-06-29 2020-11-30 양쯔 메모리 테크놀로지스 씨오., 엘티디. 인터포저를 이용하여 장치 칩이 적층된 3차원 메모리 장치
JP2020205302A (ja) * 2019-06-14 2020-12-24 キオクシア株式会社 半導体記憶装置
US10950615B2 (en) 2018-06-18 2021-03-16 Toshiba Memory Corporation Semiconductor memory device and manufacturing method thereof
US11121227B2 (en) 2019-09-25 2021-09-14 Kioxia Corporation Semiconductor memory device
JP2021177573A (ja) * 2018-06-28 2021-11-11 長江存儲科技有限責任公司Yangtze Memory Technologies Co., Ltd. ３次元（３ｄ）メモリデバイス
JP2022534478A (ja) * 2019-05-24 2022-08-01 マイクロン テクノロジー，インク． 交互の材料のスタックを通って延伸する導電性ポストを有する集積アセンブリ
WO2022168197A1 (ja) * 2021-02-03 2022-08-11 キオクシア株式会社 半導体記憶装置
US11450683B2 (en) 2019-09-13 2022-09-20 Kioxia Corporation Semiconductor memory device
US11488675B2 (en) 2020-11-13 2022-11-01 Kioxia Corporation Semiconductor memory device
US11508432B2 (en) 2020-03-17 2022-11-22 Kioxia Corporation Semiconductor storage device including identifying patterns at positions corresponding to memory blocks
US11515300B2 (en) 2020-03-12 2022-11-29 Kioxia Corporation Semiconductor memory device
US11527544B2 (en) 2020-05-25 2022-12-13 SK Hynix Inc. Three-dimensional memory device and manufacturing method thereof
US11587868B2 (en) 2021-02-17 2023-02-21 Kioxia Corporation Semiconductor memory device
US11647631B2 (en) 2020-03-09 2023-05-09 Kioxia Corporation Semiconductor memory device
US11710727B2 (en) 2019-09-18 2023-07-25 Kioxia Corporation Semiconductor storage device
US11728267B2 (en) 2020-05-01 2023-08-15 Kioxia Corporation Semiconductor memory device
US11792985B2 (en) 2020-09-16 2023-10-17 Kioxia Corporation Semiconductor storage device
US11810620B2 (en) 2021-02-02 2023-11-07 Kioxia Corporation Semiconductor storage device
US11839077B2 (en) 2020-09-04 2023-12-05 Kioxia Corporation Semiconductor storage device
US11864389B2 (en) 2020-09-17 2024-01-02 Kioxia Corporation Semiconductor memory device
US11882700B2 (en) 2020-09-01 2024-01-23 Kioxia Corporation Semiconductor storage device
US11887926B2 (en) 2020-08-31 2024-01-30 Kioxia Corporation Semiconductor storage device with insulating layers for etching stop
US11910609B2 (en) 2020-08-20 2024-02-20 Kioxia Corporation Semiconductor memory device
US11917829B2 (en) 2021-02-10 2024-02-27 Kioxia Corporation Semiconductor memory device
US11996376B2 (en) 2020-08-20 2024-05-28 Kioxia Corporation Semiconductor storage device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020047819A (ja) * 2018-09-20 2020-03-26 キオクシア株式会社 半導体記憶装置
CN109768049B (zh) * 2019-01-24 2020-06-05 长江存储科技有限责任公司 一种3d nand存储器件及其制造方法
KR102634614B1 (ko) * 2019-07-12 2024-02-08 에스케이하이닉스 주식회사 수직형 메모리 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH104125A (ja) * 1996-06-14 1998-01-06 Toshiba Microelectron Corp 半導体メモリ装置及びその製造方法
JP2010034109A (ja) * 2008-07-25 2010-02-12 Toshiba Corp 不揮発性半導体記憶装置
JP2010093269A (ja) * 2008-10-09 2010-04-22 Samsung Electronics Co Ltd 垂直型半導体装置及びその形成方法
JP2011142276A (ja) * 2010-01-08 2011-07-21 Toshiba Corp 不揮発性半導体記憶装置、及びその製造方法
JP2011204829A (ja) * 2010-03-25 2011-10-13 Toshiba Corp 半導体記憶装置
JP2012119478A (ja) * 2010-11-30 2012-06-21 Toshiba Corp 半導体記憶装置及びその製造方法
JP2015526910A (ja) * 2012-08-30 2015-09-10 マイクロン テクノロジー， インク． コントロールゲートに挿通する接続部を有するメモリアレイ
JP2016062901A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体記憶装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100904771B1 (ko) * 2003-06-24 2009-06-26 이상윤 3차원 집적회로 구조 및 제작 방법
US6531357B2 (en) * 2000-08-17 2003-03-11 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
CN100449736C (zh) * 2006-07-10 2009-01-07 中芯国际集成电路制造(上海)有限公司 存储器件分离栅极的制造方法
JP2008192857A (ja) * 2007-02-05 2008-08-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2009238874A (ja) * 2008-03-26 2009-10-15 Toshiba Corp 半導体メモリ及びその製造方法
JP5330017B2 (ja) * 2009-02-17 2013-10-30 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
US20120208347A1 (en) * 2011-02-11 2012-08-16 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory devices and methods of fabricating the same
KR20130005430A (ko) * 2011-07-06 2013-01-16 에스케이하이닉스 주식회사 불휘발성 메모리 소자 및 그 제조방법
JP2014053447A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 不揮発性半導体記憶装置
US9368489B1 (en) * 2013-02-28 2016-06-14 International Business Machines Corporation Interconnect circuits at three-dimensional (3-D) bonding interfaces of a processor array
JP2014179484A (ja) * 2013-03-15 2014-09-25 Toshiba Corp 半導体記憶装置
US9449983B2 (en) * 2013-12-19 2016-09-20 Sandisk Technologies Llc Three dimensional NAND device with channel located on three sides of lower select gate and method of making thereof
KR20150134934A (ko) * 2014-05-23 2015-12-02 에스케이하이닉스 주식회사 3차원 불휘발성 메모리 장치와, 이를 포함하는 반도체 시스템과, 그 제조방법
TWI569374B (zh) * 2014-05-23 2017-02-01 旺宏電子股份有限公司 積體電路及其操作方法與製造方法
TWI566365B (zh) * 2014-07-07 2017-01-11 旺宏電子股份有限公司 接觸結構及形成方法以及應用其之回路
US9401309B2 (en) * 2014-08-26 2016-07-26 Sandisk Technologies Llc Multiheight contact via structures for a multilevel interconnect structure

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH104125A (ja) * 1996-06-14 1998-01-06 Toshiba Microelectron Corp 半導体メモリ装置及びその製造方法
JP2010034109A (ja) * 2008-07-25 2010-02-12 Toshiba Corp 不揮発性半導体記憶装置
JP2010093269A (ja) * 2008-10-09 2010-04-22 Samsung Electronics Co Ltd 垂直型半導体装置及びその形成方法
JP2011142276A (ja) * 2010-01-08 2011-07-21 Toshiba Corp 不揮発性半導体記憶装置、及びその製造方法
JP2011204829A (ja) * 2010-03-25 2011-10-13 Toshiba Corp 半導体記憶装置
JP2012119478A (ja) * 2010-11-30 2012-06-21 Toshiba Corp 半導体記憶装置及びその製造方法
JP2015526910A (ja) * 2012-08-30 2015-09-10 マイクロン テクノロジー， インク． コントロールゲートに挿通する接続部を有するメモリアレイ
JP2016062901A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体記憶装置及びその製造方法

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7300258B2 (ja) 2017-11-07 2023-06-29 三星電子株式会社 ３次元半導体メモリ装置
JP2019087747A (ja) * 2017-11-07 2019-06-06 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ３次元半導体メモリ装置
US11282858B2 (en) 2018-03-14 2022-03-22 Kioxia Corporation Semiconductor memory device
JP2019161059A (ja) * 2018-03-14 2019-09-19 東芝メモリ株式会社 半導体記憶装置
US11818890B2 (en) 2018-03-14 2023-11-14 Kioxia Corporation Semiconductor memory device
US10950615B2 (en) 2018-06-18 2021-03-16 Toshiba Memory Corporation Semiconductor memory device and manufacturing method thereof
US11758731B2 (en) 2018-06-28 2023-09-12 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device having a shielding layer and method for forming the same
US11758729B2 (en) 2018-06-28 2023-09-12 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device having a shielding layer and method for forming the same
JP7352601B2 (ja) 2018-06-28 2023-09-28 長江存儲科技有限責任公司 ３次元（３ｄ）メモリデバイス
JP2021177573A (ja) * 2018-06-28 2021-11-11 長江存儲科技有限責任公司Yangtze Memory Technologies Co., Ltd. ３次元（３ｄ）メモリデバイス
JP2021528860A (ja) * 2018-06-29 2021-10-21 長江存儲科技有限責任公司Ｙａｎｇｔｚｅ Ｍｅｍｏｒｙ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． インターポーザを使用するスタックデバイスチップを備えた３次元メモリデバイス
KR102514903B1 (ko) * 2018-06-29 2023-03-27 양쯔 메모리 테크놀로지스 씨오., 엘티디. 인터포저를 이용하여 장치 칩이 적층된 3차원 메모리 장치
KR20200133796A (ko) * 2018-06-29 2020-11-30 양쯔 메모리 테크놀로지스 씨오., 엘티디. 인터포저를 이용하여 장치 칩이 적층된 3차원 메모리 장치
JP7145984B2 (ja) 2018-06-29 2022-10-03 長江存儲科技有限責任公司 ３次元メモリデバイスおよび３次元メモリデバイスを形成する方法
US10832776B2 (en) 2018-10-19 2020-11-10 Toshiba Memory Corporation Semiconductor device and semiconductor memory device
CN111613620B (zh) * 2019-02-26 2023-09-15 铠侠股份有限公司 半导体存储装置
CN111613620A (zh) * 2019-02-26 2020-09-01 东芝存储器株式会社 半导体存储装置
JP2022534478A (ja) * 2019-05-24 2022-08-01 マイクロン テクノロジー，インク． 交互の材料のスタックを通って延伸する導電性ポストを有する集積アセンブリ
US11800706B2 (en) 2019-05-24 2023-10-24 Micron Technology, Inc. Integrated assemblies having conductive posts extending through stacks of alternating materials
JP7414411B2 (ja) 2019-06-14 2024-01-16 キオクシア株式会社 半導体記憶装置
JP2020205302A (ja) * 2019-06-14 2020-12-24 キオクシア株式会社 半導体記憶装置
US11925024B2 (en) 2019-09-13 2024-03-05 Kioxia Corporation Semiconductor memory device
US11450683B2 (en) 2019-09-13 2022-09-20 Kioxia Corporation Semiconductor memory device
US11710727B2 (en) 2019-09-18 2023-07-25 Kioxia Corporation Semiconductor storage device
US11769808B2 (en) 2019-09-25 2023-09-26 Kioxia Corporation Semiconductor memory device
US11121227B2 (en) 2019-09-25 2021-09-14 Kioxia Corporation Semiconductor memory device
US11647631B2 (en) 2020-03-09 2023-05-09 Kioxia Corporation Semiconductor memory device
US11515300B2 (en) 2020-03-12 2022-11-29 Kioxia Corporation Semiconductor memory device
US11508432B2 (en) 2020-03-17 2022-11-22 Kioxia Corporation Semiconductor storage device including identifying patterns at positions corresponding to memory blocks
US11728267B2 (en) 2020-05-01 2023-08-15 Kioxia Corporation Semiconductor memory device
US11527544B2 (en) 2020-05-25 2022-12-13 SK Hynix Inc. Three-dimensional memory device and manufacturing method thereof
US11996376B2 (en) 2020-08-20 2024-05-28 Kioxia Corporation Semiconductor storage device
US11910609B2 (en) 2020-08-20 2024-02-20 Kioxia Corporation Semiconductor memory device
US11887926B2 (en) 2020-08-31 2024-01-30 Kioxia Corporation Semiconductor storage device with insulating layers for etching stop
US11882700B2 (en) 2020-09-01 2024-01-23 Kioxia Corporation Semiconductor storage device
US11839077B2 (en) 2020-09-04 2023-12-05 Kioxia Corporation Semiconductor storage device
US11792985B2 (en) 2020-09-16 2023-10-17 Kioxia Corporation Semiconductor storage device
US11864389B2 (en) 2020-09-17 2024-01-02 Kioxia Corporation Semiconductor memory device
US11488675B2 (en) 2020-11-13 2022-11-01 Kioxia Corporation Semiconductor memory device
US11756634B2 (en) 2020-11-13 2023-09-12 Kioxia Corporation Semiconductor memory device
US11810620B2 (en) 2021-02-02 2023-11-07 Kioxia Corporation Semiconductor storage device
WO2022168197A1 (ja) * 2021-02-03 2022-08-11 キオクシア株式会社 半導体記憶装置
US11917829B2 (en) 2021-02-10 2024-02-27 Kioxia Corporation Semiconductor memory device
US11587868B2 (en) 2021-02-17 2023-02-21 Kioxia Corporation Semiconductor memory device

Also Published As

Publication number Publication date
TW202315055A (zh) 2023-04-01
CN113241348B (zh) 2024-03-19
CN113241348A (zh) 2021-08-10
TWI778143B (zh) 2022-09-21
CN107731826A (zh) 2018-02-23
CN107731826B (zh) 2021-05-25
TW201806129A (zh) 2018-02-16
TW201904023A (zh) 2019-01-16
TWI647816B (zh) 2019-01-11

Similar Documents

Publication Publication Date Title
TWI778143B (zh) 半導體記憶裝置
US11903210B2 (en) Semiconductor memory device
US11270980B2 (en) Memory device
US9761606B1 (en) Stacked non-volatile semiconductor memory device with buried source line and method of manufacture
KR101336355B1 (ko) 반도체장치
US8896051B2 (en) Semiconductor device and method for manufacturing the same
US20140027838A1 (en) Semiconductor device and method for manufacturing the same
TW201803088A (zh) 半導體裝置及其製造方法
US10475806B2 (en) Semiconductor memory device including stacked body with conductivity and insulating members and method for manufacturing the same
TW201603229A (zh) 接觸結構及形成方法以及應用其之回路
US9362168B2 (en) Non-volatile memory device and method for manufacturing same
JP2011066038A (ja) 半導体記憶装置
JP2011054658A (ja) 不揮発性半導体記憶装置
JP2014056898A (ja) 不揮発性記憶装置
JP2013187506A (ja) 不揮発性半導体記憶装置
TWI832170B (zh) 半導體裝置
TWI818229B (zh) 半導體裝置及其製造方法
US20210296239A1 (en) Semiconductor storage device
TW202224161A (zh) 半導體裝置及其製造方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20170620

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20180905

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190314

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200123

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200128

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20200812