JP2017531320A - 張力を用いる画像センサの曲げ - Google Patents
張力を用いる画像センサの曲げ Download PDFInfo
- Publication number
- JP2017531320A JP2017531320A JP2017515154A JP2017515154A JP2017531320A JP 2017531320 A JP2017531320 A JP 2017531320A JP 2017515154 A JP2017515154 A JP 2017515154A JP 2017515154 A JP2017515154 A JP 2017515154A JP 2017531320 A JP2017531320 A JP 2017531320A
- Authority
- JP
- Japan
- Prior art keywords
- sensor chip
- image sensor
- substrate
- curved
- imaging sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005452 bending Methods 0.000 title claims abstract description 130
- 239000000758 substrate Substances 0.000 claims abstract description 291
- 230000003287 optical effect Effects 0.000 claims abstract description 85
- 238000003384 imaging method Methods 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 43
- 230000004044 response Effects 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 52
- 230000008569 process Effects 0.000 description 17
- 239000012530 fluid Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 230000007935 neutral effect Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 101000822695 Clostridium perfringens (strain 13 / Type A) Small, acid-soluble spore protein C1 Proteins 0.000 description 1
- 101000655262 Clostridium perfringens (strain 13 / Type A) Small, acid-soluble spore protein C2 Proteins 0.000 description 1
- 101000655256 Paraclostridium bifermentans Small, acid-soluble spore protein alpha Proteins 0.000 description 1
- 101000655264 Paraclostridium bifermentans Small, acid-soluble spore protein beta Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Facsimile Heads (AREA)
- Wire Bonding (AREA)
Abstract
Description
一般的に、光学系は、レンズ、ミラー、及び/又は電荷結合素子(CCDs)若しくは光エネルギを電気信号に変換し得る他のデバイスのような、1つ若しくはそれよりも多くの光検知(light sensing)デバイスを含んでよい。複数のCCDsが、例えば、シリコン、ゲルマニウム、又は他の半導体材料であってよい、基板上に加工される(fabricated)アレイ(例えば、画素化アレイ)において構成されてよい。基板上に加工される、多数の構成のうちのいずれかにおけるCCDsのアレイ又は他の光検知実体のような、感光デバイスを、ここでは「画像センサチップ」(“image sensor chip”)と呼ぶ。しかしながら、この名称は、必ずしも画像を検知するように構成される必要がなく、むしろあらゆる(可視的な又は可視的でない)光信号を検知するように構成されてよい、光センサを指すことがあることが留意されなければならない。
図1は、様々な実施態様に従った画像センサチップ100の頂面図である。画像センサチップ100は、半導体基板102を含み、感光部分104が半導体基板102の上に組み立てられる。CCDアレイであってよい感光部分104は、複数の感光要素106を含む。各々のそのような感光要素106は、例えば、部分的に、感光部分104によって生成される、画像の画素(ピクセル)に対応してよい。感光部分104をアクティブ領域は光エネルギを電気エネルギ又は電気信号に変換し得る「アクティブ領域」(“active region”)と呼ぶことがある。その他のことが記されない限り、「光」(“light”)という用語は、スペクトルのいずれかの部分における電磁エネルギを指す。よって、例えば、光又は光エネルギは、電磁スペクトルの可視部分、赤外(IR)部分、近赤外(NIR)部分、及び紫外(UV)部分を含む。
A:撮像センサチップの第1の表面の上に曲げ基板を配置すること、及び撮像センサチップ(画像センサチップ)に力を加えて湾曲した撮像センサチップをもたらすよう曲げ基板を曲げることを含み、撮像センサチップの第1の表面は、受光する光に応答して電気信号を生成する光センサを含む、方法。
Claims (15)
- 撮像センサチップの第1の表面の上に曲げ基板を配置すること、及び
前記撮像センサチップに力を加えて湾曲した撮像センサチップをもたらすよう前記曲げ基板を曲げることを含み、
前記撮像センサチップの前記第1の表面は、受光する光に応答して電気信号を生成する光センサを含む、
方法。 - 前記湾曲した撮像センサチップの第2の表面を背面基板に付着させること、及び
前記撮像センサチップの前記第1の表面から前記曲げ基板を除去することを含み、
前記第2の表面は、前記第1の表面の反対側にある、
請求項1に記載の方法。 - 前記撮像センサチップの前記第1の表面から前記曲げ基板を除去することは、前記撮像センサチップの前記第1の表面から前記曲げ基板を熱分離することを含む、請求項2に記載の方法。
- 前記背面基板は、前記撮像センサチップの前記第1の表面の逆焦点距離と少なくとも略等しい曲率半径を有する少なくとも1つの湾曲した表面を含む、請求項2に記載の方法。
- 前記撮像センサチップの前記第1の表面の上に前記曲げ基板を配置することは、接着剤を用いて前記曲げ基板を前記撮像センサチップの前記第1の表面に付着させることを含む、請求項1に記載の方法。
- 前記撮像センサチップの前記第1の表面の上に前記曲げ基板を配置することは、堆積プロセスを用いて前記撮像センサチップの前記第1の表面の上に前記曲げ基板を形成することを含む、請求項1に記載の方法。
- 前記撮像センサチップの前記第1の表面の上に前記曲げ基板を配置する前に、曲げ基板にノッチ又は溝を形成することを更に含む、請求項1に記載の方法。
- 前記曲げ基板を曲げることは、前記曲げ基板に加圧ガス又は液体を適用することを含む、請求項1に記載の方法。
- 前記湾曲した撮像センサチップの前記第1の表面は、凹面である、請求項1に記載の方法。
- 第1の側面と、反対側の第2の側面とを有し、前記第1の側面は、受光する光に応答して電気信号を生成する光センサを含む、湾曲した撮像センサチップと、
該湾曲した撮像センサチップの前記第1の側面を覆う曲げ基板とを含む、
装置。 - 前記湾曲した撮像センサチップの前記第2の側面を覆う背面基板を更に含む、請求項10に記載の装置。
- 前記曲げ基板は、接着剤によって前記湾曲した撮像センサチップの前記第1の側面に結合される、請求項10に記載の装置。
- 前記湾曲した撮像センサチップは、前記湾曲した撮像センサチップの前記第1の側面の逆焦点距離と少なくとも略等しい曲率半径を有する、請求項10に記載の装置。
- 第1の側面と、反対側の第2の側面とを有し、前記第1の側面は、受光する光に応答して電気信号を生成する光センサを含む、湾曲した撮像センサチップと、
該湾曲した撮像センサチップの前記第1の側面を覆う基板と、
前記湾曲した撮像センサチップの前記第2の側面を覆う背面基板とを含む、
システム。 - 前記湾曲した撮像センサチップの剛性は、前記曲げ基板の剛性よりも実質的に大きい、請求項14に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/491,928 US10373995B2 (en) | 2014-09-19 | 2014-09-19 | Image sensor bending using tension |
US14/491,928 | 2014-09-19 | ||
PCT/US2015/049276 WO2016044039A1 (en) | 2014-09-19 | 2015-09-10 | Image sensor bending using tension |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017531320A true JP2017531320A (ja) | 2017-10-19 |
JP6726662B2 JP6726662B2 (ja) | 2020-07-22 |
Family
ID=54199295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017515154A Active JP6726662B2 (ja) | 2014-09-19 | 2015-09-10 | 張力を用いる画像センサの曲げ |
Country Status (11)
Country | Link |
---|---|
US (1) | US10373995B2 (ja) |
EP (1) | EP3195591B1 (ja) |
JP (1) | JP6726662B2 (ja) |
KR (1) | KR102466067B1 (ja) |
CN (1) | CN106716639B (ja) |
AU (1) | AU2015318205B2 (ja) |
BR (1) | BR112017003625B1 (ja) |
CA (1) | CA2959749C (ja) |
MX (1) | MX2017003532A (ja) |
RU (1) | RU2700283C2 (ja) |
WO (1) | WO2016044039A1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10373995B2 (en) | 2014-09-19 | 2019-08-06 | Microsoft Technology Licensing, Llc | Image sensor bending using tension |
US9570488B2 (en) | 2014-09-19 | 2017-02-14 | Microsoft Technology Licensing, Llc | Image sensor bending by induced substrate swelling |
CN104486555B (zh) * | 2014-10-28 | 2019-02-12 | 北京智谷睿拓技术服务有限公司 | 图像采集控制方法和装置 |
US11128786B2 (en) * | 2014-11-21 | 2021-09-21 | Apple Inc. | Bending a circuit-bearing die |
JP6463159B2 (ja) * | 2015-02-05 | 2019-01-30 | キヤノン株式会社 | 撮像装置およびその制御方法、プログラム、並びに記憶媒体 |
US9870927B2 (en) | 2015-04-02 | 2018-01-16 | Microsoft Technology Licensing, Llc | Free-edge semiconductor chip bending |
US10304900B2 (en) | 2015-04-02 | 2019-05-28 | Microsoft Technology Licensing, Llc | Bending semiconductor chip in molds having radially varying curvature |
US9893058B2 (en) * | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
EP3418706B1 (en) * | 2016-02-15 | 2024-06-19 | Kyocera Corporation | Pressure sensor |
US10062727B2 (en) | 2016-09-09 | 2018-08-28 | Microsoft Technology Licensing, Llc | Strain relieving die for curved image sensors |
FR3061990B1 (fr) * | 2017-01-18 | 2019-04-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation collective de circuits electroniques courbes |
EP3422394B1 (en) * | 2017-06-29 | 2021-09-01 | Infineon Technologies AG | Method for processing a semiconductor substrate |
KR102468262B1 (ko) * | 2017-06-30 | 2022-11-18 | 에스케이하이닉스 주식회사 | 커브드 이미지 센서 |
EP3435558B1 (en) * | 2017-07-24 | 2021-02-17 | Deutsche Telekom AG | Local communication network, transceiver node, and method |
CN107300756B (zh) * | 2017-08-23 | 2019-12-10 | 浙江舜宇光学有限公司 | 摄像镜头 |
WO2019037466A1 (zh) * | 2017-08-23 | 2019-02-28 | 浙江舜宇光学有限公司 | 摄像镜头 |
KR102336174B1 (ko) | 2017-08-29 | 2021-12-07 | 삼성전자주식회사 | 전방위 이미지 센서 및 그 제조 방법 |
FR3073322B1 (fr) * | 2017-11-07 | 2021-12-03 | Commissariat Energie Atomique | Procede de realisation d'au moins un circuit electronique courbe |
CN107959781B (zh) * | 2017-12-11 | 2020-07-31 | 信利光电股份有限公司 | 一种摄像模组及其调整控制方法 |
US11848349B1 (en) * | 2018-06-21 | 2023-12-19 | Hrl Laboratories, Llc | Curved semiconductor and method of forming the same |
CN113132585B (zh) * | 2020-01-10 | 2022-09-09 | 宁波舜宇光电信息有限公司 | 感光芯片组件、移动终端、摄像模组及其制备方法 |
CN115398625A (zh) * | 2020-04-02 | 2022-11-25 | Hrl实验室有限责任公司 | 具有架构基板的弯曲的成像传感器封装 |
CN111491085B (zh) * | 2020-04-21 | 2021-11-05 | Oppo广东移动通信有限公司 | 图像传感器、摄像装置及电子设备 |
CN113726985B (zh) * | 2020-05-21 | 2022-09-06 | 宁波舜宇光电信息有限公司 | 感光芯片组件、摄像模组及终端设备 |
CN112532942B (zh) * | 2020-11-30 | 2021-08-10 | 黑龙江合师惠教育科技有限公司 | 一种图像传感器装置及其制造方法、摄像头以及教育行为分析监控设备 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6285400B1 (en) * | 1996-09-26 | 2001-09-04 | Nec Corporation | Solid state image pick-up device equipped with charge coupled device having incident surface alignable with focal plane |
JP2005045151A (ja) * | 2003-07-25 | 2005-02-17 | Mitsubishi Electric Corp | 撮像装置ならびにその製造方法および製造装置 |
JP2005191218A (ja) * | 2003-12-25 | 2005-07-14 | Mitsubishi Electric Corp | 固体撮像装置の製造方法 |
JP2007234900A (ja) * | 2006-03-01 | 2007-09-13 | Sanyo Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2009105459A (ja) * | 2009-02-12 | 2009-05-14 | Seiko Epson Corp | 光デバイス、光モジュール及び電子機器 |
JP2012114189A (ja) * | 2010-11-24 | 2012-06-14 | Sony Corp | 固体撮像装置とその製造方法、並びに電子機器 |
US20120279060A1 (en) * | 2011-05-06 | 2012-11-08 | National Tsing-Hua University | Methods and apparatuses for non-planar chip assembly |
US20140049683A1 (en) * | 2012-08-20 | 2014-02-20 | Microsoft Corporation | Dynamically Curved Sensor for Optical Zoom Lens |
JP2014527279A (ja) * | 2011-05-06 | 2014-10-09 | イリディウム メディカル テクノロジー カンパニー リミテッド | 非平面チップの組立品 |
JP2015053322A (ja) * | 2013-09-05 | 2015-03-19 | 富士電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69320113T2 (de) | 1992-05-22 | 1999-03-11 | Matsushita Electronics Corp | Festkörper-Bildsensor und Verfahren zu seiner Herstellung |
US5349443A (en) | 1992-11-25 | 1994-09-20 | Polaroid Corporation | Flexible transducers for photon tunneling microscopes and methods for making and using same |
JP2899600B2 (ja) | 1994-01-25 | 1999-06-02 | キヤノン販売 株式会社 | 成膜方法 |
JPH1174164A (ja) | 1997-08-27 | 1999-03-16 | Canon Inc | 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 |
US6255025B1 (en) | 1998-07-13 | 2001-07-03 | Fuji Xerox Co., Ltd. | Filter and process for producing same |
US6312959B1 (en) | 1999-03-30 | 2001-11-06 | U.T. Battelle, Llc | Method using photo-induced and thermal bending of MEMS sensors |
US6706448B1 (en) | 1999-08-30 | 2004-03-16 | Georgia Tech Research Corp. | Method and apparatus for lithiating alloys |
JP4604307B2 (ja) | 2000-01-27 | 2011-01-05 | ソニー株式会社 | 撮像装置とその製造方法及びカメラシステム |
DE10004891C2 (de) | 2000-02-04 | 2002-10-31 | Astrium Gmbh | Fokalfläche und Detektor für optoelektronische Bildaufnahmesysteme, Herstellungsverfahren und optoelektronisches Bildaufnahmesystem |
US9314339B2 (en) | 2000-03-27 | 2016-04-19 | Formae, Inc. | Implants for replacing cartilage, with negatively-charged hydrogel surfaces and flexible matrix reinforcement |
TWI313059B (ja) | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
DE10122324A1 (de) * | 2001-05-08 | 2002-11-14 | Philips Corp Intellectual Pty | Flexible integrierte monolithische Schaltung |
US6791072B1 (en) | 2002-05-22 | 2004-09-14 | National Semiconductor Corporation | Method and apparatus for forming curved image sensor module |
US6881491B2 (en) | 2003-05-16 | 2005-04-19 | Alcoa Inc. | Protective fluoride coatings for aluminum alloy articles |
JP2005278133A (ja) | 2003-07-03 | 2005-10-06 | Fuji Photo Film Co Ltd | 固体撮像装置および光学機器 |
US20050035514A1 (en) | 2003-08-11 | 2005-02-17 | Supercritical Systems, Inc. | Vacuum chuck apparatus and method for holding a wafer during high pressure processing |
US7476955B2 (en) * | 2004-01-06 | 2009-01-13 | Micron Technology, Inc. | Die package having an adhesive flow restriction area |
US7397066B2 (en) | 2004-08-19 | 2008-07-08 | Micron Technology, Inc. | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
US7432596B1 (en) | 2004-10-12 | 2008-10-07 | Energy Innovations, Inc. | Apparatus and method for bonding silicon wafer to conductive substrate |
US7190039B2 (en) | 2005-02-18 | 2007-03-13 | Micron Technology, Inc. | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US7683303B2 (en) | 2006-01-17 | 2010-03-23 | Sri International | Nanoscale volumetric imaging device having at least one microscale device for electrically coupling at least one addressable array to a data processing means |
US7507944B1 (en) | 2006-06-27 | 2009-03-24 | Cypress Semiconductor Corporation | Non-planar packaging of image sensor |
JP2008092532A (ja) | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 撮像装置とその製造方法および携帯電話装置 |
KR20090078819A (ko) * | 2006-10-10 | 2009-07-20 | 티아이알 테크놀로지 엘피 | 인쇄 회로 기판, 인쇄 회로 기판의 준비 방법, 및 인쇄 회로 기판의 조립 방법 |
US7733397B2 (en) | 2006-12-22 | 2010-06-08 | Palo Alto Research Center Incorporated | Sensor surface with 3D curvature formed by electronics on a continuous 2D flexible substrate |
US7742090B2 (en) | 2006-12-22 | 2010-06-22 | Palo Alto Research Center Incorporated | Flexible segmented image sensor |
JP2009049499A (ja) | 2007-08-14 | 2009-03-05 | Fujifilm Corp | 半導体チップの実装方法及び半導体装置 |
KR101378418B1 (ko) | 2007-11-01 | 2014-03-27 | 삼성전자주식회사 | 이미지센서 모듈 및 그 제조방법 |
US8077235B2 (en) | 2008-01-22 | 2011-12-13 | Palo Alto Research Center Incorporated | Addressing of a three-dimensional, curved sensor or display back plane |
US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US9119533B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US8372726B2 (en) * | 2008-10-07 | 2013-02-12 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
KR101567067B1 (ko) | 2008-12-02 | 2015-11-06 | 엘지이노텍 주식회사 | 카메라모듈 |
US8836805B2 (en) | 2012-07-17 | 2014-09-16 | Gary Edwin Sutton | Curved sensor system |
US8654215B2 (en) | 2009-02-23 | 2014-02-18 | Gary Edwin Sutton | Mobile communicator with curved sensor camera |
US8248499B2 (en) | 2009-02-23 | 2012-08-21 | Gary Edwin Sutton | Curvilinear sensor system |
US20120159996A1 (en) | 2010-12-28 | 2012-06-28 | Gary Edwin Sutton | Curved sensor formed from silicon fibers |
JP5615799B2 (ja) | 2009-02-27 | 2014-10-29 | Hoya株式会社 | レンズ用鋳型の製造方法および眼鏡レンズの製造方法 |
GB0915473D0 (en) | 2009-09-07 | 2009-10-07 | St Microelectronics Res & Dev | Improvements in or relating to CMOS sensors |
WO2011059766A1 (en) | 2009-10-29 | 2011-05-19 | The Board Of Trustees Of The Leland Stanford Junior University | Devices, systems and methods for advanced rechargeable batteries |
EP2388987A1 (en) | 2010-05-19 | 2011-11-23 | Thomson Licensing | Camera with volumetric sensor chip |
US9442285B2 (en) | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
WO2012103073A2 (en) | 2011-01-24 | 2012-08-02 | President And Fellows Of Harvard College | Non-differential elastomer curvature sensor |
JP5720304B2 (ja) | 2011-02-28 | 2015-05-20 | ソニー株式会社 | 固体撮像装置及び電子機器 |
US8878116B2 (en) * | 2011-02-28 | 2014-11-04 | Sony Corporation | Method of manufacturing solid-state imaging element, solid-state imaging element and electronic apparatus |
KR101861765B1 (ko) * | 2011-03-03 | 2018-05-29 | 삼성전자주식회사 | 마이크로 렌즈를 포함하는 깊이 픽셀 및 상기 깊이 픽셀을 포함하는 깊이 센서 |
CN202549843U (zh) | 2011-04-26 | 2012-11-21 | 格科微电子(上海)有限公司 | 凹面cmos图像传感器、凹面cmos图像传感元件及摄像头 |
JP2012249003A (ja) | 2011-05-26 | 2012-12-13 | Toshiba Corp | 固体撮像装置、固体撮像装置の製造方法およびカメラモジュール |
US20150120661A1 (en) | 2012-04-04 | 2015-04-30 | Scribble Technologies Inc. | System and Method for Generating Digital Content |
FR2989518A1 (fr) | 2012-04-13 | 2013-10-18 | St Microelectronics Crolles 2 | Procede de fabrication d'un capteur d'image a surface courbe |
FR2989519A1 (fr) | 2012-04-13 | 2013-10-18 | St Microelectronics Crolles 2 | Procede de fabrication d'un capteur d'image a surface courbe. |
US20140063794A1 (en) * | 2012-09-05 | 2014-03-06 | Foshan Innovative Lighting Co., Ltd. | Curved printed circuit boards, light modules, and methods for curving a printed circuit board |
JP6135109B2 (ja) * | 2012-12-07 | 2017-05-31 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法ならびに電子機器 |
JP2015070159A (ja) * | 2013-09-30 | 2015-04-13 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
KR101557942B1 (ko) * | 2014-01-08 | 2015-10-12 | 주식회사 루멘스 | 발광 소자 패키지 및 발광 소자 패키지의 제조 방법 |
US9551856B2 (en) | 2014-05-19 | 2017-01-24 | Google Inc. | MEMS-released curved image sensor |
US10373995B2 (en) | 2014-09-19 | 2019-08-06 | Microsoft Technology Licensing, Llc | Image sensor bending using tension |
US9570488B2 (en) | 2014-09-19 | 2017-02-14 | Microsoft Technology Licensing, Llc | Image sensor bending by induced substrate swelling |
US9349763B1 (en) | 2015-02-10 | 2016-05-24 | Omnivision Technologies, Inc. | Curved image sensor systems and methods for manufacturing the same |
US9998643B2 (en) | 2015-03-24 | 2018-06-12 | Semiconductor Components Industries, Llc | Methods of forming curved image sensors |
US9870927B2 (en) | 2015-04-02 | 2018-01-16 | Microsoft Technology Licensing, Llc | Free-edge semiconductor chip bending |
US10062727B2 (en) | 2016-09-09 | 2018-08-28 | Microsoft Technology Licensing, Llc | Strain relieving die for curved image sensors |
-
2014
- 2014-09-19 US US14/491,928 patent/US10373995B2/en active Active
-
2015
- 2015-09-10 AU AU2015318205A patent/AU2015318205B2/en active Active
- 2015-09-10 WO PCT/US2015/049276 patent/WO2016044039A1/en active Application Filing
- 2015-09-10 RU RU2017108537A patent/RU2700283C2/ru active
- 2015-09-10 BR BR112017003625-8A patent/BR112017003625B1/pt active IP Right Grant
- 2015-09-10 MX MX2017003532A patent/MX2017003532A/es active IP Right Grant
- 2015-09-10 JP JP2017515154A patent/JP6726662B2/ja active Active
- 2015-09-10 CN CN201580050443.4A patent/CN106716639B/zh active Active
- 2015-09-10 CA CA2959749A patent/CA2959749C/en active Active
- 2015-09-10 KR KR1020177010523A patent/KR102466067B1/ko active IP Right Grant
- 2015-09-10 EP EP15770997.3A patent/EP3195591B1/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6285400B1 (en) * | 1996-09-26 | 2001-09-04 | Nec Corporation | Solid state image pick-up device equipped with charge coupled device having incident surface alignable with focal plane |
JP2005045151A (ja) * | 2003-07-25 | 2005-02-17 | Mitsubishi Electric Corp | 撮像装置ならびにその製造方法および製造装置 |
JP2005191218A (ja) * | 2003-12-25 | 2005-07-14 | Mitsubishi Electric Corp | 固体撮像装置の製造方法 |
JP2007234900A (ja) * | 2006-03-01 | 2007-09-13 | Sanyo Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2009105459A (ja) * | 2009-02-12 | 2009-05-14 | Seiko Epson Corp | 光デバイス、光モジュール及び電子機器 |
JP2012114189A (ja) * | 2010-11-24 | 2012-06-14 | Sony Corp | 固体撮像装置とその製造方法、並びに電子機器 |
US20120279060A1 (en) * | 2011-05-06 | 2012-11-08 | National Tsing-Hua University | Methods and apparatuses for non-planar chip assembly |
JP2014527279A (ja) * | 2011-05-06 | 2014-10-09 | イリディウム メディカル テクノロジー カンパニー リミテッド | 非平面チップの組立品 |
US20140049683A1 (en) * | 2012-08-20 | 2014-02-20 | Microsoft Corporation | Dynamically Curved Sensor for Optical Zoom Lens |
JP2015053322A (ja) * | 2013-09-05 | 2015-03-19 | 富士電機株式会社 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3195591A1 (en) | 2017-07-26 |
RU2017108537A (ru) | 2018-09-17 |
CN106716639A (zh) | 2017-05-24 |
CN106716639B (zh) | 2020-02-28 |
AU2015318205B2 (en) | 2019-04-11 |
US20160086994A1 (en) | 2016-03-24 |
US10373995B2 (en) | 2019-08-06 |
AU2015318205A1 (en) | 2017-03-16 |
RU2017108537A3 (ja) | 2019-03-19 |
CA2959749C (en) | 2023-01-24 |
JP6726662B2 (ja) | 2020-07-22 |
RU2700283C2 (ru) | 2019-09-16 |
BR112017003625B1 (pt) | 2023-11-14 |
KR20170056690A (ko) | 2017-05-23 |
CA2959749A1 (en) | 2016-03-24 |
EP3195591B1 (en) | 2020-01-08 |
MX2017003532A (es) | 2017-06-21 |
KR102466067B1 (ko) | 2022-11-10 |
BR112017003625A2 (pt) | 2017-12-05 |
WO2016044039A1 (en) | 2016-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6726662B2 (ja) | 張力を用いる画像センサの曲げ | |
KR102444392B1 (ko) | 유도형 기판 팽창에 의한 이미지 센서 만곡 | |
US9998643B2 (en) | Methods of forming curved image sensors | |
EP3278362B1 (en) | Bending semiconductor chip in molds having radially varying curvature | |
US20090321861A1 (en) | Microelectronic imagers with stacked lens assemblies and processes for wafer-level packaging of microelectronic imagers | |
CN107431079B (zh) | 自由边缘半导体芯片弯曲 | |
US20130237002A1 (en) | Method and apparatus providing combined spacer and optical lens element | |
WO2015146332A1 (ja) | 固体撮像装置、電子機器、および固体撮像装置の製造方法 | |
JP2022516790A (ja) | ウェハレベルシム処理 | |
US20100013041A1 (en) | Microelectronic imager packages with covers having non-planar surface features | |
JP2005064060A (ja) | 固体撮像素子、固体撮像素子の製造方法及び固体撮像装置 | |
US10437005B2 (en) | Techniques for reducing distortion of optical beam shaping elements | |
TWI483028B (zh) | 晶圓級鏡頭及其製造方法 | |
TWI482700B (zh) | 鏡頭片的製作方法 | |
Ma et al. | Hemispherical image sensor development for wide FOV imaging | |
JP2014222280A (ja) | カメラモジュール、およびカメラモジュールの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180730 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191001 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200602 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200629 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6726662 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |