BR112017003625A2 - dobra de sensor de imagem utilizando tensão - Google Patents
dobra de sensor de imagem utilizando tensãoInfo
- Publication number
- BR112017003625A2 BR112017003625A2 BR112017003625A BR112017003625A BR112017003625A2 BR 112017003625 A2 BR112017003625 A2 BR 112017003625A2 BR 112017003625 A BR112017003625 A BR 112017003625A BR 112017003625 A BR112017003625 A BR 112017003625A BR 112017003625 A2 BR112017003625 A2 BR 112017003625A2
- Authority
- BR
- Brazil
- Prior art keywords
- sensor chip
- image sensor
- substrate
- imaging sensor
- bending
- Prior art date
Links
- 238000005452 bending Methods 0.000 title abstract 3
- 238000003384 imaging method Methods 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Wire Bonding (AREA)
- Facsimile Heads (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Light Receiving Elements (AREA)
Abstract
a presente invenção refere-se a técnicas para fabricação de um chip de sensor de imagem possuindo uma superfície curva que incluem a colocação de um substrato de dobra em uma primeira superfície de um chip e sensor de criação de imagem. a primeira superfície do chip de sensor de criação de imagem inclui sensores de luz para gerar sinais elétricos em resposta ao recebimento da luz. a fabricação também inclui a dobra do substrato de dobra de modo a imprimir forças ao chip de sensor de imagem para produzir um chip de sensor de criação de imagem curva. uma segunda superfície do chip de sensor de criação de imagem curva pode ser aderido a um substrato posterior. a segunda superfície é oposta à primeira superfície. o substrato de dobra pode ser removido da primeira superfície do chip de sensor de criação de imagem.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/491,928 | 2014-09-19 | ||
US14/491,928 US10373995B2 (en) | 2014-09-19 | 2014-09-19 | Image sensor bending using tension |
PCT/US2015/049276 WO2016044039A1 (en) | 2014-09-19 | 2015-09-10 | Image sensor bending using tension |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112017003625A2 true BR112017003625A2 (pt) | 2017-12-05 |
BR112017003625B1 BR112017003625B1 (pt) | 2023-11-14 |
Family
ID=54199295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112017003625-8A BR112017003625B1 (pt) | 2014-09-19 | 2015-09-10 | Método e aparelho de dobra de sensor de imagem utilizando tensão |
Country Status (11)
Country | Link |
---|---|
US (1) | US10373995B2 (pt) |
EP (1) | EP3195591B1 (pt) |
JP (1) | JP6726662B2 (pt) |
KR (1) | KR102466067B1 (pt) |
CN (1) | CN106716639B (pt) |
AU (1) | AU2015318205B2 (pt) |
BR (1) | BR112017003625B1 (pt) |
CA (1) | CA2959749C (pt) |
MX (1) | MX2017003532A (pt) |
RU (1) | RU2700283C2 (pt) |
WO (1) | WO2016044039A1 (pt) |
Families Citing this family (25)
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US10373995B2 (en) | 2014-09-19 | 2019-08-06 | Microsoft Technology Licensing, Llc | Image sensor bending using tension |
US9570488B2 (en) | 2014-09-19 | 2017-02-14 | Microsoft Technology Licensing, Llc | Image sensor bending by induced substrate swelling |
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US11128786B2 (en) * | 2014-11-21 | 2021-09-21 | Apple Inc. | Bending a circuit-bearing die |
JP6463159B2 (ja) * | 2015-02-05 | 2019-01-30 | キヤノン株式会社 | 撮像装置およびその制御方法、プログラム、並びに記憶媒体 |
US9870927B2 (en) | 2015-04-02 | 2018-01-16 | Microsoft Technology Licensing, Llc | Free-edge semiconductor chip bending |
US10304900B2 (en) | 2015-04-02 | 2019-05-28 | Microsoft Technology Licensing, Llc | Bending semiconductor chip in molds having radially varying curvature |
US9893058B2 (en) * | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
WO2017141460A1 (ja) * | 2016-02-15 | 2017-08-24 | 京セラ株式会社 | 圧力センサ |
US10062727B2 (en) | 2016-09-09 | 2018-08-28 | Microsoft Technology Licensing, Llc | Strain relieving die for curved image sensors |
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EP3422394B1 (en) * | 2017-06-29 | 2021-09-01 | Infineon Technologies AG | Method for processing a semiconductor substrate |
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CN107959781B (zh) * | 2017-12-11 | 2020-07-31 | 信利光电股份有限公司 | 一种摄像模组及其调整控制方法 |
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CN113132585B (zh) * | 2020-01-10 | 2022-09-09 | 宁波舜宇光电信息有限公司 | 感光芯片组件、移动终端、摄像模组及其制备方法 |
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2014
- 2014-09-19 US US14/491,928 patent/US10373995B2/en active Active
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2015
- 2015-09-10 KR KR1020177010523A patent/KR102466067B1/ko active IP Right Grant
- 2015-09-10 AU AU2015318205A patent/AU2015318205B2/en active Active
- 2015-09-10 BR BR112017003625-8A patent/BR112017003625B1/pt active IP Right Grant
- 2015-09-10 JP JP2017515154A patent/JP6726662B2/ja active Active
- 2015-09-10 CA CA2959749A patent/CA2959749C/en active Active
- 2015-09-10 WO PCT/US2015/049276 patent/WO2016044039A1/en active Application Filing
- 2015-09-10 CN CN201580050443.4A patent/CN106716639B/zh active Active
- 2015-09-10 MX MX2017003532A patent/MX2017003532A/es active IP Right Grant
- 2015-09-10 RU RU2017108537A patent/RU2700283C2/ru active
- 2015-09-10 EP EP15770997.3A patent/EP3195591B1/en active Active
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KR20170056690A (ko) | 2017-05-23 |
EP3195591A1 (en) | 2017-07-26 |
MX2017003532A (es) | 2017-06-21 |
US20160086994A1 (en) | 2016-03-24 |
JP2017531320A (ja) | 2017-10-19 |
KR102466067B1 (ko) | 2022-11-10 |
RU2700283C2 (ru) | 2019-09-16 |
CA2959749C (en) | 2023-01-24 |
WO2016044039A1 (en) | 2016-03-24 |
BR112017003625B1 (pt) | 2023-11-14 |
AU2015318205A1 (en) | 2017-03-16 |
CN106716639B (zh) | 2020-02-28 |
CN106716639A (zh) | 2017-05-24 |
AU2015318205B2 (en) | 2019-04-11 |
CA2959749A1 (en) | 2016-03-24 |
US10373995B2 (en) | 2019-08-06 |
RU2017108537A (ru) | 2018-09-17 |
EP3195591B1 (en) | 2020-01-08 |
RU2017108537A3 (pt) | 2019-03-19 |
JP6726662B2 (ja) | 2020-07-22 |
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