MX2017003532A - Combado de sensor de imagen usando tension. - Google Patents

Combado de sensor de imagen usando tension.

Info

Publication number
MX2017003532A
MX2017003532A MX2017003532A MX2017003532A MX2017003532A MX 2017003532 A MX2017003532 A MX 2017003532A MX 2017003532 A MX2017003532 A MX 2017003532A MX 2017003532 A MX2017003532 A MX 2017003532A MX 2017003532 A MX2017003532 A MX 2017003532A
Authority
MX
Mexico
Prior art keywords
sensor chip
imaging sensor
image sensor
bending
tension
Prior art date
Application number
MX2017003532A
Other languages
English (en)
Inventor
K Guenter Brian
Original Assignee
Microsoft Technology Licensing Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsoft Technology Licensing Llc filed Critical Microsoft Technology Licensing Llc
Publication of MX2017003532A publication Critical patent/MX2017003532A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Facsimile Heads (AREA)
  • Wire Bonding (AREA)

Abstract

Las técnicas para la fabricación de un chip sensor de imagen, que tiene una superficie curva, incluyen colocar un sustrato de combado sobre una primera superficie de un chip sensor de imagen. La primera superficie del chip sensor de imagen incluye los sensores de luz para generar las señales eléctricas en respuesta a la recepción de luz. La fabricación también incluye combar el sustrato de combado con el fin de impartir las fuerzas en el chip sensor de imagen para producir un chip sensor de imagen curvado. Una segunda superficie del chip sensor de imagen curvado puede adherirse a un sustrato posterior. La segunda superficie está opuesta a la primera superficie. El sustrato de combado puede retirarse de la primera superficie del chip sensor de imagen.
MX2017003532A 2014-09-19 2015-09-10 Combado de sensor de imagen usando tension. MX2017003532A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/491,928 US10373995B2 (en) 2014-09-19 2014-09-19 Image sensor bending using tension
PCT/US2015/049276 WO2016044039A1 (en) 2014-09-19 2015-09-10 Image sensor bending using tension

Publications (1)

Publication Number Publication Date
MX2017003532A true MX2017003532A (es) 2017-06-21

Family

ID=54199295

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2017003532A MX2017003532A (es) 2014-09-19 2015-09-10 Combado de sensor de imagen usando tension.

Country Status (11)

Country Link
US (1) US10373995B2 (es)
EP (1) EP3195591B1 (es)
JP (1) JP6726662B2 (es)
KR (1) KR102466067B1 (es)
CN (1) CN106716639B (es)
AU (1) AU2015318205B2 (es)
BR (1) BR112017003625B1 (es)
CA (1) CA2959749C (es)
MX (1) MX2017003532A (es)
RU (1) RU2700283C2 (es)
WO (1) WO2016044039A1 (es)

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Also Published As

Publication number Publication date
US10373995B2 (en) 2019-08-06
WO2016044039A1 (en) 2016-03-24
EP3195591A1 (en) 2017-07-26
CA2959749C (en) 2023-01-24
JP2017531320A (ja) 2017-10-19
CA2959749A1 (en) 2016-03-24
JP6726662B2 (ja) 2020-07-22
KR20170056690A (ko) 2017-05-23
BR112017003625A2 (pt) 2017-12-05
CN106716639B (zh) 2020-02-28
US20160086994A1 (en) 2016-03-24
AU2015318205A1 (en) 2017-03-16
RU2017108537A (ru) 2018-09-17
KR102466067B1 (ko) 2022-11-10
EP3195591B1 (en) 2020-01-08
AU2015318205B2 (en) 2019-04-11
RU2700283C2 (ru) 2019-09-16
BR112017003625B1 (pt) 2023-11-14
RU2017108537A3 (es) 2019-03-19
CN106716639A (zh) 2017-05-24

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