FR3027731B1 - Capteur d'image face avant a courant d'obscurite reduit sur substrat soi - Google Patents
Capteur d'image face avant a courant d'obscurite reduit sur substrat soi Download PDFInfo
- Publication number
- FR3027731B1 FR3027731B1 FR1460236A FR1460236A FR3027731B1 FR 3027731 B1 FR3027731 B1 FR 3027731B1 FR 1460236 A FR1460236 A FR 1460236A FR 1460236 A FR1460236 A FR 1460236A FR 3027731 B1 FR3027731 B1 FR 3027731B1
- Authority
- FR
- France
- Prior art keywords
- image sensor
- front panel
- soi substrate
- dark current
- sensor front
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1460236A FR3027731B1 (fr) | 2014-10-24 | 2014-10-24 | Capteur d'image face avant a courant d'obscurite reduit sur substrat soi |
US14/840,164 US9704903B2 (en) | 2014-10-24 | 2015-08-31 | Front-side imager having a reduced dark current on SOI substrate |
CN201520728928.1U CN205248275U (zh) | 2014-10-24 | 2015-09-18 | 前侧图像传感器 |
CN201510601251.XA CN105552092B (zh) | 2014-10-24 | 2015-09-18 | 在soi衬底上具有减小的暗电流的前侧成像器 |
US15/617,748 US20170271392A1 (en) | 2014-10-24 | 2017-06-08 | Front-Side Imager Having a Reduced Dark Current on a SOI Substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1460236 | 2014-10-24 | ||
FR1460236A FR3027731B1 (fr) | 2014-10-24 | 2014-10-24 | Capteur d'image face avant a courant d'obscurite reduit sur substrat soi |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3027731A1 FR3027731A1 (fr) | 2016-04-29 |
FR3027731B1 true FR3027731B1 (fr) | 2018-01-05 |
Family
ID=52102894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1460236A Expired - Fee Related FR3027731B1 (fr) | 2014-10-24 | 2014-10-24 | Capteur d'image face avant a courant d'obscurite reduit sur substrat soi |
Country Status (3)
Country | Link |
---|---|
US (2) | US9704903B2 (fr) |
CN (2) | CN105552092B (fr) |
FR (1) | FR3027731B1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3057396B1 (fr) * | 2016-10-10 | 2018-12-14 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
FR3061803B1 (fr) | 2017-01-11 | 2019-08-16 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
FR3061802B1 (fr) | 2017-01-11 | 2019-08-16 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
FR3064398B1 (fr) | 2017-03-21 | 2019-06-07 | Soitec | Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure |
KR102506837B1 (ko) * | 2017-11-20 | 2023-03-06 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
FR3083000A1 (fr) | 2018-06-21 | 2019-12-27 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
US20210140764A1 (en) * | 2019-11-07 | 2021-05-13 | Spectricity | Collimating array for an optical sensing device |
CN112291539A (zh) * | 2020-10-29 | 2021-01-29 | 维沃移动通信有限公司 | 成像装置和电子设备 |
CN116435378A (zh) * | 2023-06-12 | 2023-07-14 | 粤芯半导体技术股份有限公司 | 半导体器件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3974322B2 (ja) * | 2000-12-07 | 2007-09-12 | 株式会社日立製作所 | 光半導体集積回路装置及び光記憶再生装置 |
JP2004071817A (ja) * | 2002-08-06 | 2004-03-04 | Canon Inc | 撮像センサ |
JP2006054252A (ja) * | 2004-08-10 | 2006-02-23 | Sony Corp | 固体撮像装置 |
KR20080062045A (ko) * | 2006-12-29 | 2008-07-03 | 동부일렉트로닉스 주식회사 | 시모스 소자 및 그 제조 방법 |
KR101436504B1 (ko) * | 2008-01-25 | 2014-09-02 | 삼성전자주식회사 | 이미지 센서 |
KR101845257B1 (ko) * | 2011-02-07 | 2018-04-04 | 삼성전자주식회사 | 이미지 센서 |
CN103493202B (zh) * | 2011-05-31 | 2016-07-27 | 松下知识产权经营株式会社 | 固体摄像装置及其制造方法 |
JP2013069718A (ja) * | 2011-09-20 | 2013-04-18 | Toshiba Corp | 固体撮像装置 |
-
2014
- 2014-10-24 FR FR1460236A patent/FR3027731B1/fr not_active Expired - Fee Related
-
2015
- 2015-08-31 US US14/840,164 patent/US9704903B2/en active Active
- 2015-09-18 CN CN201510601251.XA patent/CN105552092B/zh active Active
- 2015-09-18 CN CN201520728928.1U patent/CN205248275U/zh not_active Withdrawn - After Issue
-
2017
- 2017-06-08 US US15/617,748 patent/US20170271392A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN105552092B (zh) | 2019-07-02 |
CN105552092A (zh) | 2016-05-04 |
US20160118431A1 (en) | 2016-04-28 |
US9704903B2 (en) | 2017-07-11 |
US20170271392A1 (en) | 2017-09-21 |
FR3027731A1 (fr) | 2016-04-29 |
CN205248275U (zh) | 2016-05-18 |
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Legal Events
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PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20160429 |
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PLFP | Fee payment |
Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
|
ST | Notification of lapse |
Effective date: 20210605 |