CN205248275U - 前侧图像传感器 - Google Patents

前侧图像传感器 Download PDF

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CN205248275U
CN205248275U CN201520728928.1U CN201520728928U CN205248275U CN 205248275 U CN205248275 U CN 205248275U CN 201520728928 U CN201520728928 U CN 201520728928U CN 205248275 U CN205248275 U CN 205248275U
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D·迪塔特
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Abstract

本实用新型涉及一种前侧图像传感器，包括在半导体材料中的衬底(22-1)；在半导体材料中的有源层(10)；形成在有源层中的光电二极管(14，18)的阵列；以及在衬底(22-1)和有源层(10)之间的绝缘层(22-2)。

Description

前侧图像传感器
技术领域
本公开涉及在CMOS技术中制造的所谓的“前侧”图像传感器阵列。
背景技术
图1是前侧CMOS图像传感器的像素的剖视图。在该附图和下文中，示出了不同像素元件具有选择用于使得附图可理解并且并未按照比例绘制的尺寸。P型导电区域的掺杂水平采用灰色阴影示出，灰色阴影在掺杂水平高时更深。
图像传感器形成在有源层10中，通常为P型导电类型，具有标为P-的掺杂水平。层10形成在通常为P型导电类型的衬底12上。层10可以具有在3和6微米之间的厚度，而衬底可以具有780微米的厚度。
靠近层10上表面的、N型导电类型的埋设层14与层10形成了光电二极管。如所示，层10在区域14之上的部分可以具有比层10更高的掺杂水平以提供对顶界面的钝化。层10的上表面承载了用于控制像素的各种元件，尤其是传输门TG。这些元件和其他金属迹线嵌入在钝化层16中。
像素可以由沟槽隔离体18与其相邻像素横向隔离，沟槽隔离体18通常包括半导体氧化物，其贯穿有源层10的整个厚度延伸。备选地，可以通过相对于层10的过掺杂(P型)而实现像素之间的绝缘，但是该绝缘已知从电学和光学观点看均不太有效。沟槽隔离体18之间的间距限定了像素的尺寸。
在颜色传感器的情形中，彩色滤光器19与像素一致形成在层16上。滤光器19通常承载了单个准直透镜20。
在工作中，在集成阶段期间，在有源层、也即光电二极管的区域10中所吸收的光子产生了存储在光电二极管区域14中的电子。在集成阶段结束时，存储的电荷正比于在整个集成阶段的历时期间由光电二极管接收的光量。在集成阶段之后，存储的电荷通过传输门TG传输至控制元件。
该像素结构的循环问题是不存在光时在光电二极管中载流子的产生，引起了所谓的暗电流。暗电流对于所有像素、或者在相同像素的两个集成阶段之间并不相同。该现象在所捕获的图像中产生了可视的噪声，这在低光照条件下特别显著。
暗电流的起源并非已知。识别的来源是在半导体以及有源层区域10和围绕其的绝缘材料之间的各种界面中存在缺陷或杂质。半导体材料和绝缘材料结构上并不相等，导致在界面处的“结构”缺陷。所有这些缺陷均是电活性的。
界面缺陷可以通过退化硅-绝缘体界面的半导体一侧而中和。该退化可以通过过掺杂半导体侧面而产生，以使其具有与金属相同的特性，其中自然地平衡了产生-复合现象。难以实现完美的退化，由此仍存在缺陷，但是数量较小。
在P型有源区域10的情形中，由界面缺陷产生的电子扩散至存储区域，也即区域14。这些电子参与构成了光电二极管的暗电流。为了限制该现象，中和了可以存在不良表面态的界面，诸如沟槽隔离体18与层10之间的界面。如所示，具有比有源层10更高掺杂水平的P型层可以为沟槽隔离体18加衬。掺杂水平可以与衬底相同均为P+。因此，所产生的可以扩散至区域14的电子数目较少。
尽管采取了这些措施，在前侧图像传感器中仍然存在暗电流。
实用新型内容
本公开的目的是提供一种前侧图像传感器，以至少部分解决现有技术中的上述问题。
在实施例中，前侧图像传感器包括在半导体材料中的衬底；在半导体材料中的有源层；形成在有源层中的光电二极管的阵列；以及在衬底与有源层之间的绝缘层。
绝缘层可以是具有被选择为在可见范围内反射光子的厚度的氧化硅层。
传感器可以进一步包括在绝缘层和有源层之间的与有源层相同导电类型的中间层，具有比有源层更高的掺杂水平。
在工作中，衬底可以偏置在比有源层更低的电压处。
衬底和绝缘层可以是SOI衬底的整体部分。
传感器可以进一步包括在有源层上的钝化层；在钝化层上的彩色滤光器的阵列；以及在滤光器阵列上的准直透镜的阵列。
一种制造前侧图像传感器的方法可以包括以下步骤：在SOI衬底上形成有源层；在有源层中形成光电二极管；以及在有源层上形成彩色滤光器和准直透镜的阵列。
方法可以进一步包括步骤，在绝缘层上形成中间层，具有与有源层相同的导电类型并且具有比有源层更高的掺杂水平。
在本公开的实施方式中，使用的绝缘层大大减小了衬底对暗电流的影响。
附图说明
从仅为了示例目的提供并且呈现在附图中的对特定实施例的以下描述说明将使得各个实施例的其他潜在优点和特征变得更加明确，其中：
图1如前所述是前侧CMOS图像传感器的像素的示意性剖视图；
图2是根据本实用新型的减小的暗电流像素的实施例的剖视图；以及
图3是根据本实用新型的低暗电流像素的另一实施例的剖视图。
具体实施方式
本发明人已经研究了如下假设，有助于在前侧图像传感器中形成暗电流的电子来源也可以是衬底。
的确，尽管衬底是P掺杂的，也即多数载流子是正性的，根据关系NpNn＝ni2，电子总是保留，其中Np和Nn分别是正性载流子和负性载流子的数目，并且ni是在给定温度下半导体材料的本征浓度。这些负性载流子或电子在某些条件下可以从衬底迁移至有源层，即使有源层的P掺杂水平低于衬底。
根据该假设，可以通过将有源层与衬底电隔离而消除衬底对暗电流的贡献。
衬底和有源区域之间的绝缘可以通过在绝缘体上硅(SOI)衬底上形成图像传感器而实施。
图2示出了得到的图像传感器的像素。该像素可以在除了衬底是SOI衬底之外的所有方面等同于图1，SOI衬底包括由氧化硅层22-2覆盖的在P型硅中的体区域22-1。
氧化物层22-2可以具有在10和200nm之间的厚度。通过将厚度范围约束至100－200nm，该层随后用作对具有在可见光谱附近的波长的光子的反射镜。因此反射至有源层的入射光子有助于对光电二极管充电。这导致了像素灵敏度的增大。
图3示出了图2的像素的备选实施例。层22-2用作电容器的电介质。衬底22-1被偏置在比通常接地的有源区域10的电压低的电压V1处。则所施加的电压V1是负性的。在该情形中，有源区域10和氧化物之间的界面通过在来自有源区域10的多数载流子的界面处的累积而响应于电压V1。由在有源区域10和氧化物之间界面处的正电荷累积而诱导产生的电压将在下文中标为V2，并且电容器两端的电压差因此为V2－V1。
施加的电压V1可以取决于层22-2的厚度，因此实际上取决于电容器的数值。通常，差分V2－V1对于20nm的厚度可以范围在0.2和0.4伏之间，并且对于150nm厚度可以范围在1.5和3伏之间。
图2的层24以及图3的电容器配置可以是可选的。这些元件可以用于改进单独通过绝缘层22-2而并未施加偏置电压V1所获得的结果。发明人已经观察到，不采用这些选项而使用的绝缘层22-2已经大大减小了衬底对暗电流的影响。
可以在以上详述说明书的教导下对实施例做出这些和其他改变。通常，在以下权利要求中，所使用的术语不应构造为将权利要求限定于说明书和权利要求中所公开的具体实施例，而是应该构造为包括所有可能实施例以及权利要求等价形式的全部范围。因此，权利要求并未由本公开所限定。

Claims (6)

1.一种前侧图像传感器，其特征在于，包括：
衬底，在半导体材料中；
有源层，在半导体材料中；
光电二极管的阵列，形成在所述有源层中；以及
绝缘层，在所述衬底和所述有源层之间。
2.根据权利要求1所述的传感器，其特征在于，所述绝缘层是具有被选择为在可见范围内反射光子的厚度的氧化硅层。
3.根据权利要求1所述的传感器，其特征在于，进一步包括，在所述绝缘层和所述有源层之间的、与所述有源层具有相同导电类型的中间层，所述中间层具有比所述有源层更高的掺杂水平。
4.根据权利要求1所述的传感器，其特征在于，在工作中，所述衬底被偏置在低于所述有源层电压的电压处。
5.根据权利要求1所述的传感器，其特征在于，所述衬底和所述绝缘层是SOI衬底的整体部分。
6.根据权利要求1所述的传感器，其特征在于，包括：
钝化层，在所述有源层上；
彩色滤光器的阵列，在所述钝化层上；以及
准直透镜的阵列，在所述滤光器阵列上。
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