DK3340303T3 - Optoelektronisk 3d-billeddannelsesmodul - Google Patents

Optoelektronisk 3d-billeddannelsesmodul Download PDF

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Publication number
DK3340303T3
DK3340303T3 DK17207777.8T DK17207777T DK3340303T3 DK 3340303 T3 DK3340303 T3 DK 3340303T3 DK 17207777 T DK17207777 T DK 17207777T DK 3340303 T3 DK3340303 T3 DK 3340303T3
Authority
DK
Denmark
Prior art keywords
image module
option electronic
option
electronic
module
Prior art date
Application number
DK17207777.8T
Other languages
English (en)
Inventor
Didier Gambart
Original Assignee
3D Plus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3D Plus filed Critical 3D Plus
Application granted granted Critical
Publication of DK3340303T3 publication Critical patent/DK3340303T3/da

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0219—Electrical interface; User interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0252—Constructional arrangements for compensating for fluctuations caused by, e.g. temperature, or using cooling or temperature stabilization of parts of the device; Controlling the atmosphere inside a photometer; Purge systems, cleaning devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0271—Housings; Attachments or accessories for photometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Human Computer Interaction (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Camera Bodies And Camera Details Or Accessories (AREA)
  • Studio Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DK17207777.8T 2016-12-20 2017-12-15 Optoelektronisk 3d-billeddannelsesmodul DK3340303T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1662823A FR3060851B1 (fr) 2016-12-20 2016-12-20 Module optoelectronique 3d d'imagerie

Publications (1)

Publication Number Publication Date
DK3340303T3 true DK3340303T3 (da) 2019-12-16

Family

ID=58779095

Family Applications (1)

Application Number Title Priority Date Filing Date
DK17207777.8T DK3340303T3 (da) 2016-12-20 2017-12-15 Optoelektronisk 3d-billeddannelsesmodul

Country Status (10)

Country Link
US (1) US10466097B2 (da)
EP (1) EP3340303B1 (da)
JP (1) JP7007888B2 (da)
CN (1) CN108231914B (da)
CA (1) CA2989486A1 (da)
DK (1) DK3340303T3 (da)
ES (1) ES2755886T3 (da)
FR (1) FR3060851B1 (da)
HK (1) HK1256224A1 (da)
TW (1) TWI758379B (da)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10832993B1 (en) * 2019-05-09 2020-11-10 Texas Instruments Incorporated Packaged multichip device with stacked die having a metal die attach
AT522995B1 (de) * 2019-10-07 2021-05-15 Vexcel Imaging Gmbh Sensoranordnung
CN113347325B (zh) * 2020-03-02 2023-04-18 浙江宇视科技有限公司 一种成像模组及其制备方法
FR3136110A1 (fr) 2022-05-25 2023-12-01 3D Plus Pièce de drainage thermique d’un module électronique 3D

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251717A (ja) * 1992-03-04 1993-09-28 Hitachi Ltd 半導体パッケージおよび半導体モジュール
JPH1084509A (ja) * 1996-09-06 1998-03-31 Matsushita Electron Corp 撮像装置およびその製造方法
JP4129071B2 (ja) * 1998-03-20 2008-07-30 富士通株式会社 半導体部品および半導体実装装置
JP3407218B2 (ja) 1998-12-09 2003-05-19 富士電機株式会社 半導体光センサデバイス
JP2001188155A (ja) * 1999-12-28 2001-07-10 Kuurii Components Kk 撮像素子の固定手段
WO2001091193A2 (en) * 2000-05-23 2001-11-29 Atmel Corporation Integrated ic chip package for electronic image sensor die
JP4185236B2 (ja) 2000-06-19 2008-11-26 イーストマン コダック カンパニー 固体撮像素子および撮像装置
US7078791B1 (en) * 2001-05-09 2006-07-18 Ess Technology, Inc. Chip on board package for imager
JP4223851B2 (ja) * 2003-03-31 2009-02-12 ミツミ電機株式会社 小型カメラモジュール
JP4510403B2 (ja) * 2003-05-08 2010-07-21 富士フイルム株式会社 カメラモジュール及びカメラモジュールの製造方法
US6860652B2 (en) * 2003-05-23 2005-03-01 Intel Corporation Package for housing an optoelectronic assembly
KR101172527B1 (ko) * 2005-03-31 2012-08-10 스태츠 칩팩, 엘티디. 상부면 및 하부면에서 노출된 기판 표면들을 갖는 반도체적층 패키지 어셈블리
KR100790996B1 (ko) * 2006-08-30 2008-01-03 삼성전자주식회사 이미지 센서 패키지, 그 제조 방법 및 이를 포함하는이미지 센서 모듈
US7928358B2 (en) * 2007-02-08 2011-04-19 Olympus Imaging Corp. Imaging device module and portable electronic apparatus utilizing the same
US8723283B2 (en) * 2011-02-10 2014-05-13 Electronics And Telecommunications Research Institute Optical module
US8890047B2 (en) 2011-09-21 2014-11-18 Aptina Imaging Corporation Stacked-chip imaging systems
FR2985367A1 (fr) * 2011-12-29 2013-07-05 3D Plus Procede de fabrication collective de modules electroniques 3d ne comportant que des pcbs valides
EP2663070A1 (de) * 2012-05-10 2013-11-13 Basler AG Bildsensor-Baugruppe für eine Kamera, sowie Verfahren und Biegewerkzeug zu dessen Herstellung
US8759930B2 (en) * 2012-09-10 2014-06-24 Optiz, Inc. Low profile image sensor package
TW201421987A (zh) * 2012-11-19 2014-06-01 Hon Hai Prec Ind Co Ltd 影像感測器模組及取像模組
JP5904957B2 (ja) * 2013-02-28 2016-04-20 キヤノン株式会社 電子部品および電子機器。
KR101785879B1 (ko) * 2014-07-23 2017-10-16 헵타곤 마이크로 옵틱스 피티이. 리미티드 수직 정렬 피처들을 포함하는 광 방출기 및 광 검출기 모듈들

Also Published As

Publication number Publication date
CN108231914A (zh) 2018-06-29
US10466097B2 (en) 2019-11-05
HK1256224A1 (zh) 2019-09-20
ES2755886T3 (es) 2020-04-24
FR3060851B1 (fr) 2018-12-07
JP2018117344A (ja) 2018-07-26
TW201837438A (zh) 2018-10-16
EP3340303B1 (fr) 2019-09-11
US20180172504A1 (en) 2018-06-21
JP7007888B2 (ja) 2022-02-10
TWI758379B (zh) 2022-03-21
CA2989486A1 (en) 2018-06-20
EP3340303A1 (fr) 2018-06-27
CN108231914B (zh) 2023-01-31
FR3060851A1 (fr) 2018-06-22

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