IT201600090867A1 - Dispositivo di memoria 3d - Google Patents
Dispositivo di memoria 3dInfo
- Publication number
- IT201600090867A1 IT201600090867A1 IT102016000090867A IT201600090867A IT201600090867A1 IT 201600090867 A1 IT201600090867 A1 IT 201600090867A1 IT 102016000090867 A IT102016000090867 A IT 102016000090867A IT 201600090867 A IT201600090867 A IT 201600090867A IT 201600090867 A1 IT201600090867 A1 IT 201600090867A1
- Authority
- IT
- Italy
- Prior art keywords
- memory device
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102016000090867A IT201600090867A1 (it) | 2016-09-08 | 2016-09-08 | Dispositivo di memoria 3d |
US15/698,533 US10411030B2 (en) | 2016-09-08 | 2017-09-07 | 3D memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102016000090867A IT201600090867A1 (it) | 2016-09-08 | 2016-09-08 | Dispositivo di memoria 3d |
Publications (1)
Publication Number | Publication Date |
---|---|
IT201600090867A1 true IT201600090867A1 (it) | 2018-03-08 |
Family
ID=58606380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT102016000090867A IT201600090867A1 (it) | 2016-09-08 | 2016-09-08 | Dispositivo di memoria 3d |
Country Status (2)
Country | Link |
---|---|
US (1) | US10411030B2 (it) |
IT (1) | IT201600090867A1 (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102475454B1 (ko) * | 2016-01-08 | 2022-12-08 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법 |
US10593730B1 (en) | 2018-10-10 | 2020-03-17 | Micron Technology, Inc. | Three-dimensional memory array |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130153978A1 (en) * | 2011-12-20 | 2013-06-20 | Ki Hong Lee | 3d non-volatile memory device and method of manufacturing the same |
US20160020221A1 (en) * | 2014-07-21 | 2016-01-21 | SK Hynix Inc. | Three-dimensional (3d) non-volatile memory device |
US20160118395A1 (en) * | 2014-10-24 | 2016-04-28 | SK Hynix Inc. | Semiconductor device and method of fabricating the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120130939A (ko) | 2011-05-24 | 2012-12-04 | 에스케이하이닉스 주식회사 | 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법 |
US9049880B2 (en) * | 2011-07-13 | 2015-06-09 | Badderloch Woad, Inc. | Method for harvesting cochineal wax from cochineal insects grown on an artificial medium |
JP6139370B2 (ja) * | 2013-10-17 | 2017-05-31 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR20160106977A (ko) * | 2015-03-03 | 2016-09-13 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법 |
KR20170010626A (ko) * | 2015-07-20 | 2017-02-01 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법 |
-
2016
- 2016-09-08 IT IT102016000090867A patent/IT201600090867A1/it unknown
-
2017
- 2017-09-07 US US15/698,533 patent/US10411030B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130153978A1 (en) * | 2011-12-20 | 2013-06-20 | Ki Hong Lee | 3d non-volatile memory device and method of manufacturing the same |
US20160020221A1 (en) * | 2014-07-21 | 2016-01-21 | SK Hynix Inc. | Three-dimensional (3d) non-volatile memory device |
US20160118395A1 (en) * | 2014-10-24 | 2016-04-28 | SK Hynix Inc. | Semiconductor device and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
US20180069018A1 (en) | 2018-03-08 |
US10411030B2 (en) | 2019-09-10 |
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