JP2017515302A5 - - Google Patents
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- JP2017515302A5 JP2017515302A5 JP2016558618A JP2016558618A JP2017515302A5 JP 2017515302 A5 JP2017515302 A5 JP 2017515302A5 JP 2016558618 A JP2016558618 A JP 2016558618A JP 2016558618 A JP2016558618 A JP 2016558618A JP 2017515302 A5 JP2017515302 A5 JP 2017515302A5
- Authority
- JP
- Japan
- Prior art keywords
- silica abrasive
- composition
- acid
- average particle
- nanometers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 76
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 21
- 239000008119 colloidal silica Substances 0.000 claims description 14
- 229910052742 iron Inorganic materials 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000003381 stabilizer Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims 31
- 239000000203 mixture Substances 0.000 claims 27
- 238000000034 method Methods 0.000 claims 8
- -1 aminosilane compound Chemical class 0.000 claims 7
- 238000005498 polishing Methods 0.000 claims 7
- 239000007788 liquid Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 150000001412 amines Chemical class 0.000 claims 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 5
- 229910052721 tungsten Inorganic materials 0.000 claims 5
- 239000010937 tungsten Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 239000011164 primary particle Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- 239000003112 inhibitor Substances 0.000 claims 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims 2
- 150000001450 anions Chemical class 0.000 claims 2
- TXXHDPDFNKHHGW-UHFFFAOYSA-N muconic acid Chemical compound OC(=O)C=CC=CC(O)=O TXXHDPDFNKHHGW-UHFFFAOYSA-N 0.000 claims 2
- 230000007935 neutral effect Effects 0.000 claims 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims 2
- 150000004714 phosphonium salts Chemical class 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims 2
- XVOUMQNXTGKGMA-OWOJBTEDSA-N (E)-glutaconic acid Chemical compound OC(=O)C\C=C\C(O)=O XVOUMQNXTGKGMA-OWOJBTEDSA-N 0.000 claims 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims 1
- TXXHDPDFNKHHGW-CCAGOZQPSA-N Muconic acid Natural products OC(=O)\C=C/C=C\C(O)=O TXXHDPDFNKHHGW-CCAGOZQPSA-N 0.000 claims 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 1
- VYTBPJNGNGMRFH-UHFFFAOYSA-N acetic acid;azane Chemical compound N.N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O VYTBPJNGNGMRFH-UHFFFAOYSA-N 0.000 claims 1
- 239000001361 adipic acid Substances 0.000 claims 1
- 235000011037 adipic acid Nutrition 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims 1
- 235000003704 aspartic acid Nutrition 0.000 claims 1
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 claims 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 1
- 239000004202 carbamide Substances 0.000 claims 1
- 235000015165 citric acid Nutrition 0.000 claims 1
- 125000006264 diethylaminomethyl group Chemical group [H]C([H])([H])C([H])([H])N(C([H])([H])*)C([H])([H])C([H])([H])[H] 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910021485 fumed silica Inorganic materials 0.000 claims 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims 1
- 239000011976 maleic acid Substances 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- 238000007790 scraping Methods 0.000 claims 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims 1
- 125000005369 trialkoxysilyl group Chemical group 0.000 claims 1
- 239000003054 catalyst Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/222,716 | 2014-03-24 | ||
| US14/222,716 US9127187B1 (en) | 2014-03-24 | 2014-03-24 | Mixed abrasive tungsten CMP composition |
| PCT/US2015/021671 WO2015148294A1 (en) | 2014-03-24 | 2015-03-20 | Mixed abrasive tungsten cmp composition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017515302A JP2017515302A (ja) | 2017-06-08 |
| JP2017515302A5 true JP2017515302A5 (cg-RX-API-DMAC7.html) | 2018-04-26 |
| JP6557251B2 JP6557251B2 (ja) | 2019-08-07 |
Family
ID=54012470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016558618A Active JP6557251B2 (ja) | 2014-03-24 | 2015-03-20 | 混合研磨剤タングステンｃｍｐ組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9127187B1 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3122836B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6557251B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102408747B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN106414650B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI561619B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2015148294A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| US10077381B2 (en) * | 2015-07-20 | 2018-09-18 | Kctech Co., Ltd. | Polishing slurry composition |
| US9631122B1 (en) | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
| US9771496B2 (en) * | 2015-10-28 | 2017-09-26 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant and cyclodextrin |
| US9484212B1 (en) | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| EP3400266B1 (en) * | 2016-01-06 | 2022-08-24 | CMC Materials, Inc. | Method of polishing a low-k substrate |
| JP6947718B2 (ja) * | 2016-03-30 | 2021-10-13 | 株式会社フジミインコーポレーテッド | カチオン変性シリカの製造方法およびカチオン変性シリカ分散体 |
| JP6955014B2 (ja) * | 2016-09-28 | 2021-10-27 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨 |
| US20180094166A1 (en) | 2016-09-30 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp polishing composition comprising positive and negative silica particles |
| US9783702B1 (en) * | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
| US9803108B1 (en) | 2016-10-19 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous compositions of stabilized aminosilane group containing silica particles |
| CN107243783B (zh) * | 2017-08-09 | 2018-08-28 | 睿力集成电路有限公司 | 化学机械研磨方法、设备及清洗液 |
| US10600655B2 (en) | 2017-08-10 | 2020-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| TWI723284B (zh) * | 2017-09-15 | 2021-04-01 | 美商Ｃｍｃ材料股份有限公司 | 鎢化學機械拋光(cmp)之組合物 |
| KR102544609B1 (ko) * | 2017-11-30 | 2023-06-19 | 솔브레인 주식회사 | 텅스텐 막 연마 슬러리 조성물 |
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| JP7028120B2 (ja) * | 2018-09-20 | 2022-03-02 | Jsr株式会社 | 化学機械研磨用水系分散体及びその製造方法、並びに化学機械研磨方法 |
| US10569384B1 (en) * | 2018-11-06 | 2020-02-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and polishing method |
| US10464188B1 (en) * | 2018-11-06 | 2019-11-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and polishing method |
| US12227673B2 (en) * | 2018-12-04 | 2025-02-18 | Cmc Materials Llc | Composition and method for silicon nitride CMP |
| US10968366B2 (en) | 2018-12-04 | 2021-04-06 | Cmc Materials, Inc. | Composition and method for metal CMP |
| CN111378375B (zh) * | 2018-12-28 | 2022-05-13 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| JP7408386B2 (ja) * | 2018-12-28 | 2024-01-05 | ニッタ・デュポン株式会社 | 研磨スラリー、及び、研磨スラリー用濃縮物 |
| US10676647B1 (en) * | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US10604678B1 (en) * | 2019-02-08 | 2020-03-31 | Rohrn and Haas Electronic Materials CMP Holdings, Inc. | Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds |
| WO2020245904A1 (ja) | 2019-06-04 | 2020-12-10 | 昭和電工マテリアルズ株式会社 | 研磨液、分散体、研磨液の製造方法及び研磨方法 |
| US11597854B2 (en) * | 2019-07-16 | 2023-03-07 | Cmc Materials, Inc. | Method to increase barrier film removal rate in bulk tungsten slurry |
| TWI785550B (zh) * | 2020-03-31 | 2022-12-01 | 美商Ｃｍｃ材料股份有限公司 | 含新穎磨料之ｃｍｐ組合物及方法 |
| KR102637819B1 (ko) * | 2020-03-31 | 2024-02-16 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR102623640B1 (ko) * | 2020-07-22 | 2024-01-11 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR20220130544A (ko) * | 2021-03-18 | 2022-09-27 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR102745114B1 (ko) * | 2021-03-18 | 2024-12-19 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR102851125B1 (ko) * | 2021-03-31 | 2025-08-28 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR102620964B1 (ko) * | 2021-07-08 | 2024-01-03 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법 |
| KR102638622B1 (ko) * | 2021-07-22 | 2024-02-19 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법 |
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-
2014
- 2014-03-24 US US14/222,716 patent/US9127187B1/en active Active
-
2015
- 2015-03-20 KR KR1020167029078A patent/KR102408747B1/ko active Active
- 2015-03-20 JP JP2016558618A patent/JP6557251B2/ja active Active
- 2015-03-20 EP EP15769819.2A patent/EP3122836B1/en active Active
- 2015-03-20 CN CN201580027200.9A patent/CN106414650B/zh active Active
- 2015-03-20 WO PCT/US2015/021671 patent/WO2015148294A1/en not_active Ceased
- 2015-03-24 TW TW104109484A patent/TWI561619B/zh active
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