JP6889156B2 - カチオン性界面活性剤を含むタングステン処理スラリー - Google Patents
カチオン性界面活性剤を含むタングステン処理スラリー Download PDFInfo
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- JP6889156B2 JP6889156B2 JP2018521267A JP2018521267A JP6889156B2 JP 6889156 B2 JP6889156 B2 JP 6889156B2 JP 2018521267 A JP2018521267 A JP 2018521267A JP 2018521267 A JP2018521267 A JP 2018521267A JP 6889156 B2 JP6889156 B2 JP 6889156B2
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- 239000003093 cationic surfactant Substances 0.000 title claims description 102
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- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004627 regenerated cellulose Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 125000005346 substituted cycloalkyl group Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
- SZWHXXNVLACKBV-UHFFFAOYSA-N tetraethylphosphanium Chemical compound CC[P+](CC)(CC)CC SZWHXXNVLACKBV-UHFFFAOYSA-N 0.000 description 1
- BXYHVFRRNNWPMB-UHFFFAOYSA-N tetramethylphosphanium Chemical compound C[P+](C)(C)C BXYHVFRRNNWPMB-UHFFFAOYSA-N 0.000 description 1
- SPALIFXDWQTXKS-UHFFFAOYSA-M tetrapentylazanium;bromide Chemical compound [Br-].CCCCC[N+](CCCCC)(CCCCC)CCCCC SPALIFXDWQTXKS-UHFFFAOYSA-M 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- XOGCTUKDUDAZKA-UHFFFAOYSA-N tetrapropylphosphanium Chemical compound CCC[P+](CCC)(CCC)CCC XOGCTUKDUDAZKA-UHFFFAOYSA-N 0.000 description 1
- 125000005369 trialkoxysilyl group Chemical group 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000000733 zeta-potential measurement Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1、R2、R3及びR4のそれぞれは、
水素、
置換または無置換であってよく、任意選択により荷電基を含んでよい、飽和または不飽和の環状基、
飽和であっても、または任意選択により不飽和を含んでもよく、飽和または不飽和の環状基を含んでもよく、これらのいずれも置換されてよく、または荷電基を含んでよい、線状または分岐状のアルキル基、ならびに
R1、R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができ、
nの値及びカチオン性触媒のLog Pは、次式:
8(n−1)+Log P≧1を満たす]
を有するカチオン性界面活性剤が含まれる。
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1、R2、R3及びR4のそれぞれは、
水素、
置換または無置換であってよく、任意選択により荷電基を含んでよい、飽和または不飽和の環状基、
飽和であっても、または任意選択により不飽和を含んでもよく、飽和または不飽和の環状基を含んでもよく、これらのいずれも置換されてよく、または荷電基を含んでよい、線状または分岐状のアルキル基、ならびに
R1、R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができ、
nの値及びカチオン性触媒のLog Pは、次式:
8(n−1)+Log P≧1を満たす]
の化合物またはその塩である。
8(n−1)+Log P≧1
を満たすLog Pと電荷(式1中のn)の組み合わせを有するように選択され得る。
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1、R2、R3及びR4のそれぞれは、
水素、
置換または無置換であってよく、任意選択により荷電基を含んでよい、飽和または不飽和の環状基、
飽和であっても、または任意選択により不飽和を含んでもよく、任意選択により飽和または不飽和の環状置換基を含んでもよく、これらのいずれも置換されてよく、または荷電基を含んでよい、線状または分岐状のアルキル基、ならびに
R1、R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができ、
nの値及びカチオン性触媒のLog Pは、次式:
8(n−1)+Log P≧1を満たす]
のカチオン性界面活性剤が含まれる。
液体キャリア中に分散されたシリカ研磨剤粒子であって、pH1〜6のスラリー中で少なくとも8ミリボルト(mV)の正電荷を有する粒子と、
式1:
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1、R2、R3及びR4のそれぞれは、
水素、
置換または無置換であってよく、任意選択により荷電基を含んでよい、飽和または不飽和の環状基、
飽和であっても、または任意選択により不飽和を含んでもよく、飽和または不飽和の環状基を含んでもよく、これらのいずれも置換されてよく、または荷電基を含んでよい、線状または分岐状のアルキル基、ならびに
R1、R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができ、
nの値及びカチオン性触媒のLog Pは、次式:
8(n−1)+Log P≧1を満たす]
のカチオン性界面活性剤と
を含む、タングステン含有表面を処理するのに有用な化学機械平坦化研磨組成物。
(a)基材を実施形態1〜19のいずれかに記載の研磨組成物と接触させることと、
(b)研磨組成物を基材に対して移動させることと、
(c)基材を削ってタングステンの一部を基材から除去することとを含む、方法。
濃縮された研磨組成物を水で希釈して3重量%未満の濃度のシリカ研磨剤粒子を有する研磨組成物を生成することと、
基材を研磨組成物と接触させてタングステンの一部を基材から除去することとを含む、実施形態20、21または22に記載の方法。
濃縮された研磨組成物を水で希釈して1〜3重量%の範囲の濃度のシリカ研磨剤粒子を有する研磨組成物を生成することとを含む、実施形態23の方法。
本実施例は、当該技術分野において知られている種類のコロイダルシリカと比較したブランケット研磨性能(欠陥)に関して、本明細書に開示される種類の正に帯電したコロイダルシリカ及びカチオン性界面活性剤化合物とともに調製したタングステンバフ研磨用途のために配合した本発明の組成物の利点を実証するものである。各セットにおいて、本発明のスラリーが本記載のカチオン性界面活性剤とともに配合された点を除き、比較例及び本発明のスラリーを同じように調製した。組成物について表1に記載する。シリカ研磨剤粒子の1種は、約50nmの二次粒径及び約12mVの電荷を有する荷電性コロイダルシリカ粒子であり、シリカ−Aと呼ぶ。シリカ−B粒子は、約55nmの二次粒径及び約25mVの電荷を有するコロイダルシリカ粒子である。粒子は両種類とも、本発明の「発明を実施するための形態」に記載されているように、粒子中に組み込まれている「内部」荷電性物質の使用によって帯電する。
本実施例は、パターン研磨に関して、本発明の組成物の利点を実証するものである。本発明の配合物は、本発明のカチオン性界面活性剤を含み、正に帯電したコロイダルシリカとともに調製し、タングステンバフ研磨用途のために配合したものであり、カチオン性界面活性剤を含有しない組成物と比較する。パターン研磨の結果を表4に示す。本発明のスラリーが、エロージョン減少の点で、比較例のスラリーよりも多くの利点を有することが明らかである。例えば、本発明の組成物は、比較例のスラリーによって発生したエロージョンのレベルの約1/3であるエロージョンレベルを示している。
本実施例は、本発明のカチオン性界面活性剤を含有しないということ以外は同一であるスラリーと比較して、本発明で定義される永久カチオン電荷を有しないコロイダルシリカを使用して本明細書に従って配合したスラリーの粒子安定性に関する本発明のスラリーの利点を示すものである。スラリー組成物を表5に記載する。安定性データを表6に記載する。スラリーは、動的光散乱法によって決定したとき、約110nmの二次粒径である、Fuso,Inc.から入手した同一のコロイダルシリカ(CS)を用いて調製した。粒子は、正電荷を有するようにスラリー化学成分(界面活性剤)を用いて変更する。正電荷は内部ではない。
本実施例は、永久カチオン電荷を有するカチオン粒子の粒子安定性に関して、本発明の研磨組成物の利点を示すものである。スラリー調製の基本手順は、カチオン性界面活性剤またはポリマーを水に溶解し、当量の濃縮物11Aまたは11Bと混合し、必要に応じて硝酸または水酸化カリウムを用いてpH値に調整することであった。
本実施例は、研磨中の粒子安定性に関して、本発明の研磨組成物の利点を示すものである。ウェハ(直径1.5インチ、TEOSまたはW)を、表14に概説する条件を用いて、TA Instrument ARG2レオメータを使用して、その大きさに切断したIC1010パッドで研磨した。各スラリーの粒径決定(Malvern Instruments)は、研磨の前と後に実施した。粒径成長は、研磨後の粒径と研磨前の粒径との比を取ることによって決定した。これらのPS成長値は、表15の添加剤を含まない対照スラリーに対して正規化した。
Claims (24)
- タングステン含有表面を処理するのに有用な化学機械研磨組成物であって、スラリーは、
液体キャリアと、
前記液体キャリア中に分散されたシリカ研磨剤粒子であって、pH1〜6で少なくとも8ミリボルト(mV)の永久正電荷を有する前記粒子と、
式1:
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1、R2、R3及びR4のそれぞれは、
水素、
置換または無置換であってよく、任意選択により荷電基を含んでよい、飽和または不飽和の環状基、
飽和であっても、または任意選択により不飽和を含んでもよく、飽和または不飽和の環状基を含んでもよく、これらのいずれも置換されてよく、または荷電基を含んでよい、線状または分岐状のアルキル基、ならびに
R1、R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができ、
nの値及び前記カチオン性界面活性剤のLog Pは、次式:
8(n−1)+Log P≧1を満たすカチオン性界面活性剤と
を含む、前記化学機械研磨組成物。 - R1、R2、R3及びR4のそれぞれが、独立して、1〜12個の炭素原子を有する線状アルキル基である、請求項1に記載の組成物。
- 前記カチオン性界面活性剤が、テトラブチルアンモニウム、テトラペンチルアンモニウム、テトラブチルホスホニウム、トリブチルメチルホスホニウム、トリブチルオクチルホスホニウムのうちの1つまたは組み合わせを含む、請求項2に記載の組成物。
- R1、R2及びR3のそれぞれが、独立して、1〜12個の炭素原子をそれぞれ有する線状アルキル基であり、R4が、環状アルキルまたは芳香環を含む基であって、任意選択により置換され、任意選択によりヘテロ原子を含有する環状アルキルまたは芳香環を含む基である、請求項1に記載の組成物。
- 前記カチオン性界面活性剤がベンジルトリブチルアンモニウムブロミドである、請求項4に記載の組成物。
- R1が、1〜12個の炭素原子を有する直鎖または分岐鎖のアルキル基であって、任意選択により置換されたまたは不飽和のアルキル基であり、R2、R3及びR4が、飽和または芳香環構造を含有する基によって任意選択により置換されてよい芳香環構造を形成する、請求項1に記載の組成物。
- 前記カチオン性界面活性剤が、1−ドデシルピリジニウム、1−ドデシルピリジニウム、1−ヘプチル−4(4−ピリジル)ピリジニウム、1−(4−ピリジル)ピリジニウム、メチルビオローゲンのうちの1つまたは組み合わせを含む、請求項6に記載の組成物。
- R1が水素であり、R2及びR3がそれぞれ独立して、1〜12個の炭素原子をそれぞれ有するアルキル基であり、R4が4〜15個の炭素原子を有するヘテロ原子含有アルキルである、請求項1に記載の組成物。
- 前記カチオン性界面活性剤が1,1,4,7,10,10−ヘキサメチルトリエチレンテトラミンの塩である、請求項8に記載の組成物。
- 式1によるカチオン性界面活性剤ではない窒素含有阻害剤化合物を更に含む、請求項1に記載の組成物。
- 前記窒素含有阻害剤化合物が少なくとも1つの窒素基及び少なくとも1つのカルボン酸基を含む、請求項10に記載の組成物。
- 前記窒素含有阻害剤化合物が少なくとも2つの窒素基を含有する、請求項10に記載の組成物。
- 金属含有触媒を更に含む、請求項1に記載の組成物。
- 約0.5〜約4重量%の前記シリカ研磨剤粒子を含む、請求項1に記載の組成物。
- 前記シリカ研磨剤粒子の30%以上が、3〜10個の凝集した一次粒子を含む、請求項1に記載の組成物。
- 前記シリカ研磨剤粒子が、前記粒子中に組み込まれたカチオン性化合物を含み、前記カチオン性化合物が、前記スラリー中で、荷電性窒素含有化合物または荷電性リン含有化合物である、請求項1に記載の組成物。
- 約0.1〜約5,000パーツ・パー・ミリオンの前記カチオン性界面活性剤を含む、請求項1に記載の組成物。
- タングステンを含む表面を含む基材を化学機械研磨する方法であって、
(a)前記基材を、液体キャリアと、
前記液体キャリア中に分散されたシリカ研磨剤粒子であって、pH1〜6で少なくとも8ミリボルト(mV)の永久正電荷を有する前記粒子と、
式1:
nは、少なくとも1であり、
Xは、P+またはN+であり、
R1、R2、R3及びR4のそれぞれは、
水素、
置換または無置換であってよく、任意選択により荷電基を含んでよい、飽和または不飽和の環状基、
飽和であっても、または任意選択により不飽和を含んでもよく、飽和または不飽和の環状基を含んでもよく、これらのいずれも置換されてよく、または荷電基を含んでよい、線状または分岐状のアルキル基、ならびに
R1、R2、R3及びR4のうちの2つまたは3つから形成され、任意選択により置換された飽和または不飽和の環状構造から独立して選択することができ、
nの値及び前記カチオン性界面活性剤のLog Pは、次式:
8(n−1)+Log P≧1を満たすカチオン性界面活性剤とを含む、研磨組成物と接触させることと、
(b)前記研磨組成物を前記基材に対して移動させることと、
(c)前記基材を削って前記タングステンの一部を前記基材から除去することと
を含む、前記方法。 - 前記カチオン性界面活性剤が、テトラブチルアンモニウム、テトラペンチルアンモニウム、テトラブチルホスホニウム、トリブチルメチルホスホニウム、トリブチルオクチルホスホニウムまたはこれらの塩のうちの1つまたは組み合わせを含む、請求項18に記載の方法。
- 前記カチオン性界面活性剤が、テトラブチルアンモニウム、テトラペンチルアンモニウム、テトラブチルホスホニウム、トリブチルメチルホスホニウム、トリブチルオクチルホスホニウムまたはこれらの塩のうちの1つまたは組み合わせを含む、請求項18に記載の方法。
- R1、R2及びR3のそれぞれが、独立して、1〜12個の炭素原子をそれぞれ有する線状アルキル基または2〜8個の炭素原子をそれぞれ有する線状アルキル基であり、R4が、環状アルキルまたは芳香環を含む基であって、任意選択により置換され、任意選択によりヘテロ原子を含有する環状アルキルまたは芳香環を含む基である、請求項18に記載の方法。
- 前記カチオン性界面活性剤がベンジルトリブチルアンモニウムブロミドまたはその塩である、請求項21に記載の方法。
- R1が、1〜12個の炭素原子または2〜8個の炭素原子を有する直鎖または分岐鎖のアルキル基であって、任意選択により置換されたまたは不飽和のアルキル基であり、R2、R3及びR4が、例えば、飽和または芳香環構造を含有する基によって任意選択により置換されてよい芳香環構造を形成する、請求項18に記載の方法。
- R1が水素であり、R2及びR3がそれぞれ独立して、1〜12個の炭素原子をそれぞれ有するアルキル基または2〜8個の炭素原子をそれぞれ有するアルキル基であり、R4が4〜15個の炭素原子を有するヘテロ原子含有アルキルであり、R4が窒素含有アルキル基である、請求項18に記載の方法。
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