JP2017216325A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2017216325A
JP2017216325A JP2016108367A JP2016108367A JP2017216325A JP 2017216325 A JP2017216325 A JP 2017216325A JP 2016108367 A JP2016108367 A JP 2016108367A JP 2016108367 A JP2016108367 A JP 2016108367A JP 2017216325 A JP2017216325 A JP 2017216325A
Authority
JP
Japan
Prior art keywords
power supply
channel mos
mos transistor
diode
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016108367A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017216325A5 (enExample
Inventor
正徳 田中
Masanori Tanaka
正徳 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2016108367A priority Critical patent/JP2017216325A/ja
Priority to US15/480,000 priority patent/US10361557B2/en
Priority to CN201710330480.1A priority patent/CN107452734A/zh
Publication of JP2017216325A publication Critical patent/JP2017216325A/ja
Publication of JP2017216325A5 publication Critical patent/JP2017216325A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016108367A 2016-05-31 2016-05-31 半導体装置 Pending JP2017216325A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016108367A JP2017216325A (ja) 2016-05-31 2016-05-31 半導体装置
US15/480,000 US10361557B2 (en) 2016-05-31 2017-04-05 Semiconductor device
CN201710330480.1A CN107452734A (zh) 2016-05-31 2017-05-11 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016108367A JP2017216325A (ja) 2016-05-31 2016-05-31 半導体装置

Publications (2)

Publication Number Publication Date
JP2017216325A true JP2017216325A (ja) 2017-12-07
JP2017216325A5 JP2017216325A5 (enExample) 2019-01-10

Family

ID=60420677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016108367A Pending JP2017216325A (ja) 2016-05-31 2016-05-31 半導体装置

Country Status (3)

Country Link
US (1) US10361557B2 (enExample)
JP (1) JP2017216325A (enExample)
CN (1) CN107452734A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449634B (zh) * 2016-09-23 2019-06-14 矽力杰半导体技术(杭州)有限公司 瞬态电压抑制器及其制造方法
KR20190140216A (ko) * 2018-06-11 2019-12-19 에스케이하이닉스 주식회사 Esd 보호 회로를 포함하는 반도체 집적 회로 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07176735A (ja) * 1993-12-17 1995-07-14 Nec Corp 半導体回路の入力保護回路
JP2001298157A (ja) * 2000-04-14 2001-10-26 Nec Corp 保護回路及びこれを搭載した半導体集積回路
JP2010153779A (ja) * 2008-12-24 2010-07-08 Magnachip Semiconductor Ltd 静電気放電保護回路
JP2013201164A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 半導体装置
JP2016072349A (ja) * 2014-09-29 2016-05-09 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture
GB2334633B (en) * 1998-02-21 2002-09-25 Mitel Corp Low leakage electrostatic discharge protection system
JP2003023084A (ja) 2001-07-05 2003-01-24 Matsushita Electric Ind Co Ltd Ｅｓｄ保護回路
JP4942007B2 (ja) * 2004-10-25 2012-05-30 ルネサスエレクトロニクス株式会社 半導体集積回路
JP5232444B2 (ja) * 2007-11-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体集積回路
KR101145785B1 (ko) * 2008-12-26 2012-05-16 에스케이하이닉스 주식회사 집적회로
US20130003242A1 (en) * 2010-07-15 2013-01-03 Kun-Hsien Lin Transient voltage suppressor for multiple pin assignments

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07176735A (ja) * 1993-12-17 1995-07-14 Nec Corp 半導体回路の入力保護回路
JP2001298157A (ja) * 2000-04-14 2001-10-26 Nec Corp 保護回路及びこれを搭載した半導体集積回路
JP2010153779A (ja) * 2008-12-24 2010-07-08 Magnachip Semiconductor Ltd 静電気放電保護回路
JP2013201164A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 半導体装置
JP2016072349A (ja) * 2014-09-29 2016-05-09 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20170346281A1 (en) 2017-11-30
CN107452734A (zh) 2017-12-08
US10361557B2 (en) 2019-07-23

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