JP2017204655A5 - - Google Patents
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- JP2017204655A5 JP2017204655A5 JP2017151252A JP2017151252A JP2017204655A5 JP 2017204655 A5 JP2017204655 A5 JP 2017204655A5 JP 2017151252 A JP2017151252 A JP 2017151252A JP 2017151252 A JP2017151252 A JP 2017151252A JP 2017204655 A5 JP2017204655 A5 JP 2017204655A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- transistor device
- gate trench
- doped region
- carbide transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 39
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 210000000746 body region Anatomy 0.000 claims description 6
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 31
- 239000010410 layer Substances 0.000 description 18
- 239000002344 surface layer Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/567,504 US9577073B2 (en) | 2014-12-11 | 2014-12-11 | Method of forming a silicon-carbide device with a shielded gate |
| US14/567,504 | 2014-12-11 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015240816A Division JP6373822B2 (ja) | 2014-12-11 | 2015-12-10 | シールドゲートを有する炭化珪素装置を形成する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017204655A JP2017204655A (ja) | 2017-11-16 |
| JP2017204655A5 true JP2017204655A5 (https=) | 2019-01-24 |
| JP6707498B2 JP6707498B2 (ja) | 2020-06-10 |
Family
ID=56082701
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015240816A Active JP6373822B2 (ja) | 2014-12-11 | 2015-12-10 | シールドゲートを有する炭化珪素装置を形成する方法 |
| JP2017151252A Active JP6707498B2 (ja) | 2014-12-11 | 2017-08-04 | シールドゲートを有する炭化珪素装置を形成する方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015240816A Active JP6373822B2 (ja) | 2014-12-11 | 2015-12-10 | シールドゲートを有する炭化珪素装置を形成する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US9577073B2 (https=) |
| JP (2) | JP6373822B2 (https=) |
| CN (2) | CN105702715B (https=) |
| DE (2) | DE102015017291B4 (https=) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016080322A1 (ja) | 2014-11-18 | 2016-05-26 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| DE102014117780B4 (de) | 2014-12-03 | 2018-06-21 | Infineon Technologies Ag | Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung |
| DE102014119465B3 (de) | 2014-12-22 | 2016-05-25 | Infineon Technologies Ag | Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas |
| DE102016111998B4 (de) * | 2016-06-30 | 2024-01-18 | Infineon Technologies Ag | Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen |
| DE102018010445B4 (de) | 2017-03-24 | 2025-07-10 | Infineon Technologies Ag | Siliziumcarbid-halbleitervorrichtung und herstellungsverfahren |
| DE102017108738B4 (de) * | 2017-04-24 | 2022-01-27 | Infineon Technologies Ag | SiC-HALBLEITERVORRICHTUNG MIT EINEM VERSATZ IN EINEM GRABENBODEN UND HERSTELLUNGSVERFAHREN HIERFÜR |
| US10431465B2 (en) * | 2017-09-18 | 2019-10-01 | Vanguard International Semiconductor Corporation | Semiconductor structures and methods of forming the same |
| JP6896593B2 (ja) | 2017-11-22 | 2021-06-30 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
| JP7166053B2 (ja) | 2017-12-21 | 2022-11-07 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
| DE102018103973B4 (de) | 2018-02-22 | 2020-12-03 | Infineon Technologies Ag | Siliziumcarbid-halbleiterbauelement |
| DE102019111308A1 (de) | 2018-05-07 | 2019-11-07 | Infineon Technologies Ag | Siliziumcarbid halbleiterbauelement |
| US10580878B1 (en) * | 2018-08-20 | 2020-03-03 | Infineon Technologies Ag | SiC device with buried doped region |
| JP2020047679A (ja) | 2018-09-14 | 2020-03-26 | 株式会社東芝 | 半導体装置 |
| JP7030665B2 (ja) | 2018-09-15 | 2022-03-07 | 株式会社東芝 | 半導体装置 |
| US11056586B2 (en) * | 2018-09-28 | 2021-07-06 | General Electric Company | Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices |
| DE102018124740B4 (de) | 2018-10-08 | 2025-08-28 | Infineon Technologies Ag | Verfahren zur herstellung eines halbleiterbauelements |
| DE102018127797B4 (de) * | 2018-11-07 | 2022-08-04 | Infineon Technologies Ag | Einen siliziumcarbid-körper enthaltende halbleitervorrichtung |
| US10985248B2 (en) | 2018-11-16 | 2021-04-20 | Infineon Technologies Ag | SiC power semiconductor device with integrated Schottky junction |
| US10586845B1 (en) | 2018-11-16 | 2020-03-10 | Infineon Technologies Ag | SiC trench transistor device and methods of manufacturing thereof |
| US10903322B2 (en) | 2018-11-16 | 2021-01-26 | Infineon Technologies Ag | SiC power semiconductor device with integrated body diode |
| KR102751443B1 (ko) | 2019-03-25 | 2025-01-13 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 표시 장치 및 이의 제조 방법 |
| DE102019108062B4 (de) | 2019-03-28 | 2021-06-10 | Infineon Technologies Ag | Siliziumcarbid-vorrichtung mit graben-gatestruktur und herstellungsverfahren |
| JP7242467B2 (ja) | 2019-08-02 | 2023-03-20 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
| DE102019121859B3 (de) * | 2019-08-14 | 2020-11-26 | Infineon Technologies Ag | Siliziumcarbid-vorrichtung mit graben-gate |
| US11245016B2 (en) * | 2020-01-31 | 2022-02-08 | Alpha And Omega Semiconductor (Cayman) Ltd. | Silicon carbide trench semiconductor device |
| US12604504B2 (en) | 2021-11-23 | 2026-04-14 | Infineon Technologies Ag | Shielding structure for silicon carbide devices |
| CN114496795A (zh) * | 2021-12-30 | 2022-05-13 | 广东芯粤能半导体有限公司 | 半导体结构及其形成方法 |
| CN115513061A (zh) * | 2022-11-22 | 2022-12-23 | 广东芯粤能半导体有限公司 | 半导体结构的制备方法及半导体结构 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6285060B1 (en) * | 1999-12-30 | 2001-09-04 | Siliconix Incorporated | Barrier accumulation-mode MOSFET |
| JP2001358338A (ja) | 2000-06-14 | 2001-12-26 | Fuji Electric Co Ltd | トレンチゲート型半導体装置 |
| KR100385859B1 (ko) * | 2000-12-27 | 2003-06-02 | 한국전자통신연구원 | 트렌치 게이트 mosfet 전력소자 제조방법 |
| JP4564362B2 (ja) * | 2004-01-23 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
| US7532922B2 (en) | 2004-08-11 | 2009-05-12 | General Electric Company | System and method for translating medical imaging system patient tables |
| JP4961668B2 (ja) * | 2005-01-11 | 2012-06-27 | 富士電機株式会社 | 半導体装置の製造方法 |
| US7648877B2 (en) * | 2005-06-24 | 2010-01-19 | Fairchild Semiconductor Corporation | Structure and method for forming laterally extending dielectric layer in a trench-gate FET |
| JP5509520B2 (ja) | 2006-12-21 | 2014-06-04 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| JP2008177335A (ja) | 2007-01-18 | 2008-07-31 | Fuji Electric Device Technology Co Ltd | 炭化珪素絶縁ゲート型半導体装置。 |
| JP2009088186A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | トレンチゲート型トランジスタ及びその製造方法 |
| JP4890407B2 (ja) | 2007-09-28 | 2012-03-07 | オンセミコンダクター・トレーディング・リミテッド | トレンチゲート型トランジスタ及びその製造方法 |
| US7582922B2 (en) | 2007-11-26 | 2009-09-01 | Infineon Technologies Austria Ag | Semiconductor device |
| US7989882B2 (en) | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
| JP2009302510A (ja) * | 2008-03-03 | 2009-12-24 | Fuji Electric Device Technology Co Ltd | トレンチゲート型半導体装置およびその製造方法 |
| JP4877286B2 (ja) | 2008-07-08 | 2012-02-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| US8148749B2 (en) * | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
| JP5531787B2 (ja) * | 2010-05-31 | 2014-06-25 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| US8525254B2 (en) | 2010-08-12 | 2013-09-03 | Infineon Technologies Austria Ag | Silicone carbide trench semiconductor device |
| JP5732790B2 (ja) | 2010-09-14 | 2015-06-10 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2014139956A (ja) | 2011-03-30 | 2014-07-31 | Hitachi Ltd | トレンチ型ＳｉＣ半導体装置の製造方法 |
| JP5673393B2 (ja) * | 2011-06-29 | 2015-02-18 | 株式会社デンソー | 炭化珪素半導体装置 |
| US9018699B2 (en) | 2011-09-22 | 2015-04-28 | Panasonic Intellectual Property Management Co., Ltd. | Silicon carbide semiconductor element and method for fabricating the same |
| WO2013076890A1 (ja) | 2011-11-21 | 2013-05-30 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US8637922B1 (en) | 2012-07-19 | 2014-01-28 | Infineon Technologies Ag | Semiconductor device |
| JP6056292B2 (ja) * | 2012-09-12 | 2017-01-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| US9293558B2 (en) * | 2012-11-26 | 2016-03-22 | Infineon Technologies Austria Ag | Semiconductor device |
| DE112013006262B4 (de) | 2012-12-28 | 2024-06-13 | Mitsubishi Electric Corporation | Siliciumcarbid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
| JP6077380B2 (ja) * | 2013-04-24 | 2017-02-08 | トヨタ自動車株式会社 | 半導体装置 |
| US9299793B2 (en) * | 2013-05-16 | 2016-03-29 | Infineon Technologies Americas Corp. | Semiconductor device with a field plate trench having a thick bottom dielectric |
-
2014
- 2014-12-11 US US14/567,504 patent/US9577073B2/en active Active
-
2015
- 2015-12-10 CN CN201510917326.5A patent/CN105702715B/zh not_active Expired - Fee Related
- 2015-12-10 DE DE102015017291.3A patent/DE102015017291B4/de active Active
- 2015-12-10 JP JP2015240816A patent/JP6373822B2/ja active Active
- 2015-12-10 DE DE102015121532.2A patent/DE102015121532B4/de active Active
- 2015-12-10 CN CN202110393910.0A patent/CN113130634B/zh active Active
-
2017
- 2017-01-06 US US15/400,299 patent/US9960230B2/en active Active
- 2017-08-04 JP JP2017151252A patent/JP6707498B2/ja active Active
-
2018
- 2018-04-19 US US15/957,765 patent/US20180248000A1/en not_active Abandoned
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