JP6373822B2 - シールドゲートを有する炭化珪素装置を形成する方法 - Google Patents

シールドゲートを有する炭化珪素装置を形成する方法 Download PDF

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JP6373822B2
JP6373822B2 JP2015240816A JP2015240816A JP6373822B2 JP 6373822 B2 JP6373822 B2 JP 6373822B2 JP 2015240816 A JP2015240816 A JP 2015240816A JP 2015240816 A JP2015240816 A JP 2015240816A JP 6373822 B2 JP6373822 B2 JP 6373822B2
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gate trench
substrate
forming
region
doped
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JP2016115936A (ja
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ロマン エステベ，
ロマン エステベ，
トーマス アイヒンガー，
トーマス アイヒンガー，
ヴォルフガング ベルクナー，
ヴォルフガング ベルクナー，
ダニエル キュック，
ダニエル キュック，
デトハルト ペーテルス，
デトハルト ペーテルス，
ラルフ シーミーニエック，
ラルフ シーミーニエック，
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Infineon Technologies AG
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Infineon Technologies AG
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    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
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    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
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    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2015240816A 2014-12-11 2015-12-10 シールドゲートを有する炭化珪素装置を形成する方法 Active JP6373822B2 (ja)

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US14/567,504 US9577073B2 (en) 2014-12-11 2014-12-11 Method of forming a silicon-carbide device with a shielded gate
US14/567,504 2014-12-11

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DE102015121532B4 (de) 2018-11-22
JP6707498B2 (ja) 2020-06-10
CN105702715B (zh) 2021-05-25
US20180248000A1 (en) 2018-08-30
US20170117352A1 (en) 2017-04-27
US9960230B2 (en) 2018-05-01
JP2016115936A (ja) 2016-06-23
JP2017204655A (ja) 2017-11-16
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CN113130634B (zh) 2023-07-25
US20160172468A1 (en) 2016-06-16

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