JP2017152748A - 化合物半導体基板 - Google Patents
化合物半導体基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 180
- 150000001875 compounds Chemical class 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002736 nonionic surfactant Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 abstract description 45
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 description 69
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- 239000010410 layer Substances 0.000 description 49
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 28
- 238000001035 drying Methods 0.000 description 25
- 238000004458 analytical method Methods 0.000 description 19
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 150000002500 ions Chemical group 0.000 description 16
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
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- 230000005469 synchrotron radiation Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】本発明の化合物半導体基板は、少なくとも1主面が鏡面研磨された化合物半導体基板であって、当該鏡面研磨面が水素(H)、炭素(C)及び酸素(O)を含む有機物で被覆された化合物半導体基板、或いは、少なくとも1主面が鏡面加工された化合物半導体基板であって、成長温度550℃で成長させたエピタキシャル膜と前記化合物半導体基板との界面のシリコン(Si)ピーク濃度が、2×1017cm−3以下である化合物半導体基板である。
【選択図】図2A
Description
(1)テトラメチルアンモニウムハイドロオキシド0.5vol%水溶液に室温(25℃)で5分浸漬
(2)超純水リンス3分
(3)テトラメチルアンモニウムハイドロオキシド0.5vol%水溶液に室温(25℃)で5分浸漬
(4)超純水リンス3分
(5)pH5の硝酸酸性水溶液に室温(25℃)3分浸漬
(6)超純水リンス3分を2回
(7)遠心振り切り乾燥
但し、一般的に知られている他の洗浄方法を用いることもできる。
2 i−GaAs層(高純度エピタキシャル層)
3 n−AlGaAs層(電子供給層)
4 ソース電極
5 ゲート電極
6 ドレン電極
11 正常な電流の流れ
12 異常な電流の流れ
20 界面活性剤
21 有機汚染
Claims (2)
- 少なくとも1主面が鏡面研磨された化合物半導体基板であって、該鏡面研磨面が水素(H)、炭素(C)及び酸素(O)を含む有機物で被覆されており、前記有機物の分子量が700以上2000以下であることを特徴とする化合物半導体基板。
- 前記有機物が非イオン系界面活性剤であることを特徴とする請求項1に記載の化合物半導体基板。
Applications Claiming Priority (2)
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JP2011110980 | 2011-05-18 | ||
JP2011110980 | 2011-05-18 |
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JP2016148028A Division JP2016195278A (ja) | 2011-05-18 | 2016-07-28 | 化合物半導体基板 |
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JP2019082594A Division JP2019117959A (ja) | 2011-05-18 | 2019-04-24 | エピタキシャル成長用の化合物半導体基板の製造方法、化合物半導体基板上のエピタキシャル成長方法および化合物半導体基板。 |
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JP2013515086A Active JP6070548B2 (ja) | 2011-05-18 | 2012-05-09 | 化合物半導体基板 |
JP2016148028A Pending JP2016195278A (ja) | 2011-05-18 | 2016-07-28 | 化合物半導体基板 |
JP2017113992A Pending JP2017152748A (ja) | 2011-05-18 | 2017-06-09 | 化合物半導体基板 |
JP2019082594A Pending JP2019117959A (ja) | 2011-05-18 | 2019-04-24 | エピタキシャル成長用の化合物半導体基板の製造方法、化合物半導体基板上のエピタキシャル成長方法および化合物半導体基板。 |
JP2020185610A Active JP7060060B2 (ja) | 2011-05-18 | 2020-11-06 | エピタキシャル成長用の化合物半導体基板の製造方法、化合物半導体基板上のエピタキシャル成長方法および化合物半導体基板 |
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JP2013515086A Active JP6070548B2 (ja) | 2011-05-18 | 2012-05-09 | 化合物半導体基板 |
JP2016148028A Pending JP2016195278A (ja) | 2011-05-18 | 2016-07-28 | 化合物半導体基板 |
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JP2020185610A Active JP7060060B2 (ja) | 2011-05-18 | 2020-11-06 | エピタキシャル成長用の化合物半導体基板の製造方法、化合物半導体基板上のエピタキシャル成長方法および化合物半導体基板 |
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US (1) | US9000567B2 (ja) |
JP (5) | JP6070548B2 (ja) |
CN (2) | CN107039516B (ja) |
DE (2) | DE112012002127B4 (ja) |
TW (3) | TWI625768B (ja) |
WO (1) | WO2012157476A1 (ja) |
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DE112012002127B4 (de) * | 2011-05-18 | 2022-10-27 | Sumitomo Electric Industries, Ltd. | Verfahren zur Herstellung eines Verbindungshalbleitersubstrats |
JP6296001B2 (ja) * | 2015-05-20 | 2018-03-20 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法及び評価方法 |
CN107958835A (zh) * | 2016-10-14 | 2018-04-24 | 上海新昇半导体科技有限公司 | 一种半导体晶圆的抛光方法 |
CN107039244B (zh) * | 2017-04-14 | 2020-02-21 | 广东先导先进材料股份有限公司 | 半导体晶片的处理工艺 |
EP3514266A4 (en) * | 2017-05-26 | 2022-05-11 | Sumitomo Electric Industries, Ltd. | GROUP III-V COMPOSITE SEMICONDUCTOR SUBSTRATE AND GROUP III-V COMPOSITE SEMICONDUCTOR SUBSTRATE WITH EPITAXIAL LAYER |
US10822722B2 (en) * | 2017-07-04 | 2020-11-03 | Sumitomo Electric Industries, Ltd. | Gallium arsenide crystal body and gallium arsenide crystal substrate |
JP6983570B2 (ja) * | 2017-08-01 | 2021-12-17 | 株式会社サイオクス | 半導体積層物の製造方法、窒化物半導体自立基板の製造方法、半導体積層物および半導体装置 |
JP6512369B1 (ja) * | 2017-09-21 | 2019-05-15 | 住友電気工業株式会社 | 半絶縁性化合物半導体基板および半絶縁性化合物半導体単結晶 |
JP6508431B1 (ja) | 2017-09-21 | 2019-05-08 | 住友電気工業株式会社 | 半絶縁性ヒ化ガリウム結晶基板 |
JP6530125B1 (ja) * | 2018-04-27 | 2019-06-12 | 住友化学株式会社 | 光学フィルム |
WO2022070969A1 (ja) * | 2020-09-30 | 2022-04-07 | 株式会社フジミインコーポレーテッド | 酸化ガリウム基板用洗浄剤 |
JP7327714B1 (ja) * | 2022-09-16 | 2023-08-16 | 住友電気工業株式会社 | ヒ化ガリウム単結晶基板およびその製造方法 |
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JP7060060B2 (ja) | 2022-04-26 |
TWI588876B (zh) | 2017-06-21 |
JP2021015999A (ja) | 2021-02-12 |
US9000567B2 (en) | 2015-04-07 |
JPWO2012157476A1 (ja) | 2014-07-31 |
DE112012002127T5 (de) | 2014-02-13 |
JP2019117959A (ja) | 2019-07-18 |
CN107039516B (zh) | 2020-07-10 |
DE112012002127B4 (de) | 2022-10-27 |
JP6070548B2 (ja) | 2017-02-01 |
US20120292747A1 (en) | 2012-11-22 |
TWI556288B (zh) | 2016-11-01 |
JP2016195278A (ja) | 2016-11-17 |
DE202012013658U1 (de) | 2019-04-30 |
CN103460349A (zh) | 2013-12-18 |
CN107039516A (zh) | 2017-08-11 |
CN103460349B (zh) | 2016-11-23 |
TW201250794A (en) | 2012-12-16 |
WO2012157476A1 (ja) | 2012-11-22 |
TWI625768B (zh) | 2018-06-01 |
TW201729258A (zh) | 2017-08-16 |
TW201705220A (zh) | 2017-02-01 |
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