JP2019117959A - エピタキシャル成長用の化合物半導体基板の製造方法、化合物半導体基板上のエピタキシャル成長方法および化合物半導体基板。 - Google Patents
エピタキシャル成長用の化合物半導体基板の製造方法、化合物半導体基板上のエピタキシャル成長方法および化合物半導体基板。 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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Abstract
Description
(1)テトラメチルアンモニウムハイドロオキシド0.5vol%水溶液に室温(25℃)で5分浸漬
(2)超純水リンス3分
(3)テトラメチルアンモニウムハイドロオキシド0.5vol%水溶液に室温(25℃)で5分浸漬
(4)超純水リンス3分
(5)pH5の硝酸酸性水溶液に室温(25℃)3分浸漬
(6)超純水リンス3分を2回
(7)遠心振り切り乾燥
但し、一般的に知られている他の洗浄方法を用いることもできる。
2 i−GaAs層(高純度エピタキシャル層)
3 n−AlGaAs層(電子供給層)
4 ソース電極
5 ゲート電極
6 ドレン電極
11 正常な電流の流れ
12 異常な電流の流れ
20 界面活性剤
21 有機汚染
Claims (11)
- 鏡面研磨された表面を有する化合物半導体基板を準備する工程と、
前記準備する工程の後に、前記化合物半導体基板を洗浄する工程と、
前記洗浄する工程の後に、前記化合物半導体基板の前記表面を水素(H)、炭素(C)及び酸素(O)を含む有機物で覆う工程と、
前記有機物で覆う工程の後に、前記化合物半導体基板を乾燥する工程と、
を含むエピタキシャル成長用の化合物半導体基板の製造方法。 - 前記有機物で覆う工程は、
前記化合物半導体基板を水素(H)、炭素(C)及び酸素(O)を含む有機物を含む溶液に浸漬する工程である、
請求項1に記載のエピタキシャル成長用の化合物半導体基板の製造方法。 - 前記有機物で覆う工程は、
前記化合物半導体基板の少なくとも一方の表面に水素(H)、炭素(C)及び酸素(O)を含む有機物を含む溶液を塗布する工程である、
請求項1に記載のエピタキシャル成長用の化合物半導体基板の製造方法。 - 前記有機物で覆う工程は、前記洗浄する工程の後、48時間以内に開始される、
請求項1から請求項3のいずれか1項に記載のエピタキシャル成長用の化合物半導体基板の製造方法。 - 前記塗布する工程は、pH2以上pH7以下の弱酸性下で行われる、
請求項1から請求項4のいずれか1項に記載のエピタキシャル成長用の化合物半導体基板の製造方法。 - 前記有機物は、非イオン系界面活性剤である、
請求項1から請求項5のいずれか1項に記載のエピタキシャル成長用の化合物半導体基板の製造方法。 - 前記有機物は、分子量が700以上2000以下の有機物である、
請求項1から請求項6のいずれか1項に記載のエピタキシャル成長用の化合物半導体基板の製造方法 - 少なくとも一方の表面に水素(H)、炭素(C)及び酸素(O)を含む有機物の層を有する化合物半導体基板を用い、成長前の高温サーマルクリーニングなしで、エピタキシャル膜を成長させる、
化合物半導体基板上のエピタキシャル成長方法。 - 前記有機物の層は、分子量が700以上2000以下の有機物の層である、
請求項8に記載のエピタキシャル成長方法。 - 前記有機物は非イオン系界面活性剤である、
請求項8または請求項9に記載のエピタキシャル成長方法。 - 請求項8から請求項10のいずれか1項に記載のエピタキシャル成長方法に供される、少なくとも一方の表面に水素(H)、炭素(C)及び酸素(O)を含む有機物の層を有する化合物半導体基板。
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US (1) | US9000567B2 (ja) |
JP (5) | JP6070548B2 (ja) |
CN (2) | CN107039516B (ja) |
DE (2) | DE112012002127B4 (ja) |
TW (3) | TWI625768B (ja) |
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JP6512369B1 (ja) * | 2017-09-21 | 2019-05-15 | 住友電気工業株式会社 | 半絶縁性化合物半導体基板および半絶縁性化合物半導体単結晶 |
JP6508431B1 (ja) | 2017-09-21 | 2019-05-08 | 住友電気工業株式会社 | 半絶縁性ヒ化ガリウム結晶基板 |
JP6530125B1 (ja) * | 2018-04-27 | 2019-06-12 | 住友化学株式会社 | 光学フィルム |
JP7327714B1 (ja) * | 2022-09-16 | 2023-08-16 | 住友電気工業株式会社 | ヒ化ガリウム単結晶基板およびその製造方法 |
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JP7060060B2 (ja) | 2022-04-26 |
TWI588876B (zh) | 2017-06-21 |
JP2021015999A (ja) | 2021-02-12 |
JP2017152748A (ja) | 2017-08-31 |
US9000567B2 (en) | 2015-04-07 |
JPWO2012157476A1 (ja) | 2014-07-31 |
DE112012002127T5 (de) | 2014-02-13 |
CN107039516B (zh) | 2020-07-10 |
DE112012002127B4 (de) | 2022-10-27 |
JP6070548B2 (ja) | 2017-02-01 |
US20120292747A1 (en) | 2012-11-22 |
TWI556288B (zh) | 2016-11-01 |
JP2016195278A (ja) | 2016-11-17 |
DE202012013658U1 (de) | 2019-04-30 |
CN103460349A (zh) | 2013-12-18 |
CN107039516A (zh) | 2017-08-11 |
CN103460349B (zh) | 2016-11-23 |
TW201250794A (en) | 2012-12-16 |
WO2012157476A1 (ja) | 2012-11-22 |
TWI625768B (zh) | 2018-06-01 |
TW201729258A (zh) | 2017-08-16 |
TW201705220A (zh) | 2017-02-01 |
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