JP2017098546A - 反転階調パターニングの方法 - Google Patents
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Abstract
Description
ここで、HFHは元のフィーチャ(または段差)の高さであり、H1は当該フィーチャ(または段差)の上の平坦化材料の厚さであり、H2は、当該フィーチャの底での(例えば、段差に近いオープン底領域における)平坦化材料の厚さである。したがって、層の平坦化効率は、完全な100%の平坦層の理想状態からのばらつきの尺度である。
ここで、係数Aは、元のレジストフィーチャの側壁傾斜に依存する。エッチング選択性ξ1およびξ3の両方を最大にした場合、結果フィーチャのCD均一性CDU1に対する保護層の厚さ均一性PLUおよび残膜の厚さ均一性RLTU(インプリントパターンの場合)の寄与は最小化する。例えば、ξ1=1およびξ3=10の場合、(CDU1)2に対するPLUおよびRLTUの寄与は、材料間のエッチング選択性がないとき、即ちξ1=1、ξ3=1のときでのエッチング工程と比較して100倍小さくなるであろう。したがって、より小さいサイズの反転階調フィーチャは、高い均一なCDを有するであろう。なお、残膜の無いパターン化されたレジストの場合には、式(2)におけるRLTUの項は省略される。したがって、図8Dにおいて、構造体が基板404への更なるエッチングにさらされるとき、それぞれの元のパターンフィーチャが移行区域に配置されたか否かに関わらず、高い均一なCDを有する元のパターンの逆転(反転階調)が生じる。
フィーチャ710の頂部が最初に露出したときにハードマスクエッチングを停止した場合には、式(5)となる。
従って、所与のエッチング選択性ξ2において、特定の場所で下地ハードマスクを保護するための保護層708の最小必要厚は、フィーチャ710が最初に露出したとき、即ちhHME=hHMのときに、該特定の場所における保護層の最後の厚さhfinalがおおよそ零になるような厚さである。これは、式(6)で表されうる。
ここで、最小の保護層厚は、hprotect_min_localで示される。
ここから、保護層についての最小平坦化効率またはPEminは、式(8)および式(9)で表されうる。
換言すると、所与の保護層についての最小平坦化効率PEは、エッチング選択性ξ2、フィーチャ高さFH、ハードマスク厚hHM、およびグローバル保護層厚さばらつきΔhprotect_global、グローバルフィーチャ高さばらつきΔFHglobalに依存する。エッチング除去されるべき所与のハードマスク厚hHMEにおいて、保護層についての最小平坦化効率は、以下の式によって表されうる。
ここで、ハードマスクの最小エッチング厚hHMは、ハードマスクのエッチングに必要とされる厚さhHMEによって置き換えられる。
以下の実施例において、シリコンウェハ基板が、インプリントリソグラフィ技術によってパターニングされ、結果パターン層は、異なるグローバルフィーチャ高さばらつきΔFHglobalを有する。次いで、パターン層が、SiO2コンフォーマルハードマスク層でコーティングされ、SiO2は、ALD技術によって様々な厚さhHMでパターン層上に堆積される。次いで、スピンオンカーボン(SOC)保護層が、300nmの平均厚さにスピンオンプロセスによってハードマスク層の上に堆積され、保護層は、様々なグローバル厚さばらつきΔhprotect_globalを有する。エッチング選択性ξ2も同様にばらつく。
従って、上記のパラメータでは、保護層についての22.5%の最小平坦化効率は、パターン階調を安全に且つ完全に反転させるために十分である。以下の表1は、上記の所与のパラメータであるが、異なるエッチングレートについてのPEmin値を示す。
表1.残りのパラメータを一定とした式(10)による所与のエッチング選択性ξ2と必要最小平坦化効率との関係
示したように、エッチングレート選択性が例えばξ2=10と非常に高ければ、最小平坦化効率は、例えばPEmin=17.5%と割と低くなりうる。逆に、(まだ完全な平坦になっていないが)平坦化効率が例えばPEmin=63.5%と割と高ければ、エッチングレート選択性は、例えばξ2=1と割と低くなりうる。
ここで、上記のパラメータが与えられ且つエッチング選択性ξ2=5が選択された場合、40%の最小平坦化効率は、保護層について、パターン階調を安全に且つ完全に反転させるために十分である。しかしながら、10nmの理想的でないスピンオン保護層の厚さばらつきは、平坦化効率についてのより厳しい要求を引き起こしていることが分かる。ξ2=5については、最小平坦化効率が、Δhprotect_global=3nmでの22.5%(実施例1)から、この例におけるΔhprotect_global=10nmでの40%に増加する。以下の表2は、上記の所与のパラメータであるが、異なる関連したエッチングレート選択性についてのPEmin値を示す。
表2.残りのパラメータを一定とした、所与のエッチング選択性ξ2と必要最小平坦化効率との実施例2の関係
ここで、上記のパラメータが与えられ且つエッチング選択性ξ2=5が選択された場合、27.5%の最小平坦化効率は、保護層について、パターン階調を安全かつ完全に反転させるために十分である。増加させたハードマスクの厚さ(即ち、増加させたハードマスクのエッチング深さ)が、最小平坦化効率についてのより厳しい要求を引き起こしていることは明らかである。ξ2=5については、最小平坦化効率が、hHME=20nmでの22.5%(実施例1)から、この例におけるhHME=30nmでの27.5%に増加する。以下の表3は、上記の所与のパラメータであるが、異なる関連したエッチングレート選択性についてのPEmin値を示す。
表3.残りのパラメータを一定とした、所与のエッチング選択性ξ2と必要最小平坦化効率との実施例3の関係
表4.残りのパラメータを一定とした、所与のエッチング選択性ξ2と必要最小平坦化効率との実施例4の関係
実施例5は、実施例2のパラメータに加えて、40nmから60nmに増加したフィーチャ高さを使用する。エッチング選択性ξ2=5については、26.7%の最小平坦化効率は、パターン階調を安全にかつ完全に反転させるために十分である。表5は、異なるエッチングレート選択性の範囲についてのPEmin値を示す。増加したフィーチャ高さが、(表2に比べて)最小平坦化効率についての要求を緩和させることは明らかである。例えば、ξ2=5について、平坦化効率の要件は、実施例2における40%から26.5%に低下する。
表5.残りのパラメータを一定とした、所与のエッチング選択性ξ2と必要最小平坦化効率との実施例5の関係
SiO2に対するSOCのエッチング選択性は、SOCをエッチバックするための酸素プラズマレシピ(即ち、エッチングステップ1)を用いてξ1=20であった。CF4/CHF3混合プラズマレシピは、エッチング選択性ξ2=4(即ち、エッチングステップ2)で、酸化シリコンハードマスクをエッチバックするために用いられた。上記の式(10)から、上記のパラメータで階調反転を成功するために必要な最小PEは、式(17)として表される。
最小平坦化効率PEmin=21%よりかなり大きい計測された平坦化効率PEmeasured=49%が、反転階調プロセスに要求される。
スピンオンコーティング(49%)によって得られた観察された平坦化効率は、小さなフィーチャ(30nmライン/スペース)と大きなフィーチャ(30ミクロンオープン領域)とを含むパターン全体をうまく反転させるのに十分であった。
Claims (20)
- パターン層を基板上に形成する工程であって、前記パターン層が、非均一なサイズのフィーチャを有するリリーフパターンを画定する工程と、
前記パターン層のフィーチャ上に、低温堆積によってコンフォーマルハードマスク層を堆積する工程と、
前記コンフォーマル層の上に非平坦保護層を適用する工程であって、前記保護層が、95%より小さい平坦効率PE(PE95%)を有し、前記保護層が、第1エッチング条件の下で少なくとも5の前記コンフォーマル層に対するエッチング選択性ξ1(ξ1≧5)を有し、前記コンフォーマル層が、第2エッチング条件の下で1より大きい前記保護層に対するエッチング選択性ξ2(ξ2>1)を有し、前記パターン層が、第3エッチング条件の下で少なくとも5の前記コンフォーマル層に対するエッチング選択性ξ3(ξ3≧5)を有する工程と、
前記パターン突起フィーチャの頂部の上に広がる前記コンフォーマル層の上面を露出するように、前記保護コーティングを前記第1エッチング条件の下で選択エッチングする工程と、
その下の前記パターンフィーチャを露出するように、露出された前記コンフォーマル層を前記第2エッチング条件の下で選択エッチングする工程と、
前記基板を露出して前記リリーフパターンの逆であるパターンを形成するように、露出された前記パターンフィーチャを前記第3エッチング条件の下で選択エッチングする工程と、
を含むことを特徴とする方法。 - 前記低温堆積は、原子層堆積(ALD)であることを特徴とする請求項1に記載の方法。
- 前記非平坦保護コーティングは、少なくとも50%の平坦効率(PE)を有する(50%≦PE<95%)ことを特徴とする請求項1に記載の方法。
- 前記エッチング選択性ξ2は、少なくとも2(ξ2)であり、前記非平坦保護コーティングは、少なくとも35%の平坦効率(PE)を有する(35%≦PE<95%)ことを特徴とする請求項1に記載の方法。
- 前記エッチング選択性ξ2は、少なくとも5(ξ2≧5)であり、前記非平坦保護コーティングは、少なくとも20%の平坦効率(PE)を有する(20%≦PE<95%)ことを特徴とする請求項1に記載の方法。
- 前記エッチング選択性ξ2は、少なくとも10(ξ2≧10)であり、前記非平坦保護コーティングは、少なくとも15%の平坦効率(PE)を有する(15%≦PE<95%)ことを特徴とする請求項1に記載の方法。
- 前記エッチング選択性ξ2は、少なくとも20(ξ2≧20)であり、前記非平坦保護コーティングは、少なくとも10%の平坦効率(PE)を有する(10%≦PE<95%)ことを特徴とする請求項1に記載の方法。
- 前記平坦効率は、90%より小さく、または80%より小さく、または70%より小さく、または60%より小さいことを特徴とする請求項1に記載の方法。
- 前記平坦効率は、90%より小さく、または80%より小さく、または70%より小さく、または60%より小さく、または50%より小さいことを特徴とする請求項4に記載の方法。
- 前記平坦効率は、90%より小さく、または80%より小さく、または70%より小さく、または60%より小さく、または50%より小さく、または40%より小さいことを特徴とする請求項5に記載の方法。
- 前記平坦効率は、90%より小さく、または80%より小さく、または70%より小さく、または60%より小さく、または50%より小さく、または40%より小さく、または30%より小さいことを特徴とする請求項6に記載の方法。
- 前記エッチング選択性ξ1およびξ3は、最小化された最小加工寸法ばらつきを有する反転階調フィーチャを得るように最大化されることを特徴とする請求項1に記載の方法。
- 前記コンフォーマル層は、最も近い前記フィーチャ間のスペースsの半分より大きい厚さhHMを有する(hHM≧s/2)ことを特徴とする請求項1に記載の方法。
- 前記パターン層は、インプリントリソグラフィプロセスによって形成されることを特徴とする請求項1に記載の方法。
- 前記コンフォーマルハードマスク層は、SiO2またはAl2O3であることを特徴とする請求項1に記載の方法。
- 前記非平面保護層は、スピンオンカーボン(SOC)であることを特徴とする請求項1に記載の方法。
- 前記パターンは、ミクロンサイズのオープン領域によって分離されたナノメートルスケールのフィーチャのクラスタを含むことを特徴とする請求項1に記載の方法。
- 前記基板に前記反転階調パターンを転写するように、露出された前記基板を選択エッチングする工程を更に含むことを特徴とする請求項1に記載の方法。
- 物品を製造する方法であって、
請求項1に記載の方法によって基板上にパターンを形成する工程と、
形成された前記パターンを前記基板に転写する工程と、
前記物品を製造するために前記基板を加工する工程と、
を含むことを特徴とする方法。 - 前記物品は、半導体デバイスであることを特徴とする請求項19に記載の方法。
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JP7291515B2 (ja) | 2019-03-27 | 2023-06-15 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法、記憶媒体及び基板処理システムの制御装置 |
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TWI707381B (zh) | 2020-10-11 |
US10211051B2 (en) | 2019-02-19 |
CN106707686B (zh) | 2021-01-12 |
US20170140921A1 (en) | 2017-05-18 |
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KR20170056457A (ko) | 2017-05-23 |
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