SG10201609407PA - Method of reverse tone patterning - Google Patents
Method of reverse tone patterningInfo
- Publication number
- SG10201609407PA SG10201609407PA SG10201609407PA SG10201609407PA SG10201609407PA SG 10201609407P A SG10201609407P A SG 10201609407PA SG 10201609407P A SG10201609407P A SG 10201609407PA SG 10201609407P A SG10201609407P A SG 10201609407PA SG 10201609407P A SG10201609407P A SG 10201609407PA
- Authority
- SG
- Singapore
- Prior art keywords
- reverse tone
- tone patterning
- patterning
- reverse
- tone
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000000059 patterning Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00611—Processes for the planarisation of structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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- B81C2201/0118—Processes for the planarization of structures
- B81C2201/0121—Processes for the planarization of structures involving addition of material followed by removal of parts of said material, i.e. subtractive planarization
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- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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- B81C2201/0118—Processes for the planarization of structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Geometry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562254891P | 2015-11-13 | 2015-11-13 | |
US15/336,909 US10211051B2 (en) | 2015-11-13 | 2016-10-28 | Method of reverse tone patterning |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201609407PA true SG10201609407PA (en) | 2017-06-29 |
Family
ID=58691352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201609407PA SG10201609407PA (en) | 2015-11-13 | 2016-11-10 | Method of reverse tone patterning |
Country Status (6)
Country | Link |
---|---|
US (1) | US10211051B2 (ja) |
JP (1) | JP6336009B2 (ja) |
KR (1) | KR102098438B1 (ja) |
CN (1) | CN106707686B (ja) |
SG (1) | SG10201609407PA (ja) |
TW (1) | TWI707381B (ja) |
Families Citing this family (13)
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US9947548B2 (en) * | 2016-08-09 | 2018-04-17 | International Business Machines Corporation | Self-aligned single dummy fin cut with tight pitch |
JP6817168B2 (ja) * | 2017-08-25 | 2021-01-20 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
US10643858B2 (en) | 2017-10-11 | 2020-05-05 | Samsung Electronics Co., Ltd. | Method of etching substrate |
US10606171B2 (en) | 2018-02-14 | 2020-03-31 | Canon Kabushiki Kaisha | Superstrate and a method of using the same |
US10304744B1 (en) | 2018-05-15 | 2019-05-28 | International Business Machines Corporation | Inverse tone direct print EUV lithography enabled by selective material deposition |
TWI677271B (zh) * | 2018-08-31 | 2019-11-11 | 欣興電子股份有限公司 | 線路基板及其製作方法 |
CN109407461B (zh) * | 2018-10-26 | 2022-04-12 | 京东方科技集团股份有限公司 | 光掩模及其制作方法和制作显示器件的方法 |
US10867854B2 (en) * | 2019-01-08 | 2020-12-15 | Tokyo Electron Limited | Double plug method for tone inversion patterning |
US11501969B2 (en) | 2019-01-22 | 2022-11-15 | International Business Machines Corporation | Direct extreme ultraviolet lithography on hard mask with reverse tone |
US10971362B2 (en) | 2019-02-27 | 2021-04-06 | International Business Machines Corporation | Extreme ultraviolet patterning process with resist hardening |
JP7291515B2 (ja) * | 2019-03-27 | 2023-06-15 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法、記憶媒体及び基板処理システムの制御装置 |
KR102249260B1 (ko) | 2019-10-10 | 2021-05-10 | 경희대학교 산학협력단 | 신규 유산균 및 이의 용도 |
WO2022047586A1 (en) * | 2020-09-02 | 2022-03-10 | Vuereal Inc. | Flip chip microdevice structure |
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-
2016
- 2016-10-28 US US15/336,909 patent/US10211051B2/en active Active
- 2016-11-08 TW TW105136294A patent/TWI707381B/zh active
- 2016-11-10 SG SG10201609407PA patent/SG10201609407PA/en unknown
- 2016-11-11 CN CN201611011752.3A patent/CN106707686B/zh active Active
- 2016-11-11 KR KR1020160150252A patent/KR102098438B1/ko active IP Right Grant
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JP6336009B2 (ja) | 2018-06-06 |
CN106707686B (zh) | 2021-01-12 |
US10211051B2 (en) | 2019-02-19 |
US20170140921A1 (en) | 2017-05-18 |
TW201727706A (zh) | 2017-08-01 |
TWI707381B (zh) | 2020-10-11 |
JP2017098546A (ja) | 2017-06-01 |
KR20170056457A (ko) | 2017-05-23 |
KR102098438B1 (ko) | 2020-05-29 |
CN106707686A (zh) | 2017-05-24 |
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