JP2017069459A - 半田付け製品の製造方法 - Google Patents
半田付け製品の製造方法 Download PDFInfo
- Publication number
- JP2017069459A JP2017069459A JP2015195198A JP2015195198A JP2017069459A JP 2017069459 A JP2017069459 A JP 2017069459A JP 2015195198 A JP2015195198 A JP 2015195198A JP 2015195198 A JP2015195198 A JP 2015195198A JP 2017069459 A JP2017069459 A JP 2017069459A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- temperature
- soldering
- manufacturing
- soldered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 238000005476 soldering Methods 0.000 claims abstract description 88
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- 230000008016 vaporization Effects 0.000 claims abstract description 34
- 230000008018 melting Effects 0.000 claims abstract description 32
- 238000002844 melting Methods 0.000 claims abstract description 32
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- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 68
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 34
- 235000019253 formic acid Nutrition 0.000 claims description 34
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- 239000011261 inert gas Substances 0.000 claims description 13
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- 230000007423 decrease Effects 0.000 claims description 3
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- 229910045601 alloy Inorganic materials 0.000 description 4
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- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 1
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- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
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- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- UYAAVKFHBMJOJZ-UHFFFAOYSA-N diimidazo[1,3-b:1',3'-e]pyrazine-5,10-dione Chemical compound O=C1C2=CN=CN2C(=O)C2=CN=CN12 UYAAVKFHBMJOJZ-UHFFFAOYSA-N 0.000 description 1
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- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- 239000011800 void material Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
- B23K35/3613—Polymers, e.g. resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/38—Selection of media, e.g. special atmospheres for surrounding the working area
- B23K35/383—Selection of media, e.g. special atmospheres for surrounding the working area mainly containing noble gases or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29109—Indium [In] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
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Abstract
【解決手段】本願の半田付け製品の製造方法は、半田と、半田を仮止めする仮固定剤とを提供する提供工程と;仮固定剤で半田を半田付け対象物に仮止めする仮止工程と;半田を仮止めした半田付け対象物を、真空中に置くか、または、半田が溶融する温度よりも低い所定の温度に加熱して、仮固定剤を気化させ半田と半田付け対象物の間に間隙を生じさせる気化工程と;気化工程に並行して、またはその後に、半田が溶融する温度よりも低い所定の温度で、気化工程により残された半田と半田付け対象物を還元ガスで還元する還元工程と;還元工程の後に、半田付け対象物を半田が溶融する温度以上の所定の温度に加熱して半田を溶融する半田溶融工程を備える。
【選択図】図1
Description
特許文献1には、半導体チップを絶縁回路基板上の所定の位置にずれなく搭載し良好に半田接合させるために用いられる半導体チップの位置決め治具が開示されている(特許文献1、段落0001、0006〜0010)。
半田とは、半田付けに利用される合金をいう。
「真空中」とは、大気より低い圧力(いわゆる減圧)の空間をいう。
一見滑らかで平坦に見える物質の表面も、原子、分子レベルでは無数の凹凸を有する。したがって、このように構成すると、仮固定剤の気化により、半田および半田付け対象物間に上記凹凸による間隙が生じる。本願発明はこの間隙に還元ガスを導入することにより、半田および半田付け対象物の還元を効果的に行うことができる。
さらに、真空とすることにより、仮固定剤の気化を促進させることができる。さらに、常圧時の沸点が還元時の温度よりも高い仮固定剤であっても使用することができる。このように、効率よく仮固定剤を気化させることができ、使用可能な溶剤の種類を増やすことができる。
このように構成すると、半田および半田付け対象物が雰囲気中に存在する微量酸素やその他のガスによって酸化、腐食されるのを防ぐことができる。
このように構成すると、仮固定剤の気化を促進させることができる。さらに、常圧時の沸点が還元時の温度よりも高い仮固定剤であっても使用することができる。このように、効率よく仮固定剤を気化させることができ、使用可能な溶剤の種類を増やすことができる。
このように構成すると、半田および半田付け対象物間等の間隙に還元ガスを浸入し易くすることができる。
このように構成すると、真空破壊工程において半田が溶融している状態で空洞(ボイド)を潰すことができ、空洞を潰した後に半田を固化させることができるため、半田中のボイドによる疲労寿命の低下を抑制することができる。
このように構成すると、仮固定剤の沸点が半田溶融温度よりも低いため、半田が溶融する温度になる前に仮固定剤は完全に気化し、半田溶融後に仮固定剤が半田内部に取り込まれることを回避できる。
このように構成すると、溶剤の沸点が半田溶融温度よりも低いため、半田が溶融する温度になる前に溶剤は完全に気化し、半田溶融後に溶剤が半田内部に取り込まれることを回避できる。さらに、極めて容易に仮固定剤を準備することができる。さらに、仮固定剤を活性物質のような害になる物質を含まずに形成できる。
このように構成すると、300℃より低い温度で半田および半田付け対象物を還元することができる。
図1を参照して、本発明の第1の実施の形態に係る半田付け製品の製造方法を説明する。本願の半田付け製品の製造方法は、半田付け装置を用いて半田付けを行う場合の製造方法である。
図1は、半田付け製品の製造方法を示すフローチャートである。本願発明は、(1)半田と仮固定剤の提供工程(2)半田の仮止め工程(4)仮固定剤の気化工程(5)半田と半田付け対象物の還元工程(6)半田溶融工程を備える。さらに、必要に応じて、(3)不活性ガス工程(7)真空破壊工程(8)冷却工程を備えてもよい。
(1)半田と仮固定剤の提供工程
半田と仮固定剤とを準備する工程である。準備とは、半田と仮固定剤が存在する状態にすればよく、すでにあるものを用意する場合であってもよく、仮固定剤を調製して用意する場合であってもよい。
なお、仮固定剤とは半田を半田付け対象物に仮止めするために用いるものである。
半田付け対象物に仮固定剤を塗布し、塗布した仮固定剤上に半田を配置し、半田を仮止めする工程である。仮固定剤の塗布方法は特に限定されない。
半田および半田付け対象物を不活性ガス雰囲気下に配置する工程である。不活性ガスとしては、窒素またはアルゴンを挙げることができる。
加熱または減圧(真空)により仮固定剤を気化させる工程である。
例えば、半田付け対象物、仮固定剤、半田を加熱すると、まず仮固定剤の気化が始まる。仮固定剤が気化すると、溶融温度が気化温度よりも高い半田と半田付け対象物は溶融せず、半田と半田付け対象物間には表面の凹凸による間隙が生じる。
さらに還元温度まで加熱し、仮固定剤を完全に気化させ、同時に還元ガスにより半田と半田付け対象物を還元する工程である。還元は仮固定剤の気化と同時であってもよく、気化後であってもよい。また、還元は、常圧であっても減圧(真空)であってもよい。
ここで還元とは、半田付けの際、半田付け対象物の表面や半田の表面の酸化膜等を除去することである。還元ガスとしては、例えば、ギ酸ガス、カルボン酸のガス、カルボン酸以外の有機酸のガス、有機酸以外の有機化合物のガス、有機化合物以外の他の還元性のガス(例えば水素ガス)を挙げることができる。還元温度を半田の溶融温度よりも低くする観点、および入手容易性の観点から、還元ガスとしてはギ酸ガスが好ましい。
さらに半田溶融温度まで加熱し、半田付けを行う工程である。
半田は、前記還元ガスによる還元温度および還元時の気圧において溶融しないものが好ましい。すなわち、半田が溶融する温度は、還元温度よりも高い任意の温度であり、本実施の形態では還元温度よりも10〜50℃高い温度であることが好ましい。
真空状態で半田を溶融させた場合に、半田溶融後圧力を上げて、半田内部の空洞(ボイド)を圧縮する工程である。この工程により、溶融半田に巻き込まれた空気により半田内に形成したボイドを小さくする、または無くすことができる。
溶融半田を冷却して固化させる工程である。冷却は自然冷却であっても、強制冷却であってもよい。溶融半田の固化により、半田付け製品が製造される。また、本発明の方法では、残渣が存在しないため、半田付け製品の洗浄は不要である。
仮固定剤の気化温度≦還元温度<半田、半田付け対象物の融点
本願発明では、プリフォーム(成形)半田を用いる。プリフォーム半田を用いるため、ペースト単体での半田付けに比べ半田量を増やすことができる。さらに、プリフォーム半田により、正確な半田量を把握することができる。
なお、本明細書で半田という場合は、プリフォーム半田を指す。
半田の合金組成は特に制限されない。バンプ形成やプリント基板の実装に今日使用されている各種半田合金が使用可能である。例えば、鉛フリー半田として用いられているSn−Ag系半田、Sn−Ag−Cu系半田、Sn−Ag−Cu−Bi系半田、Sn−Ag−In−Bi系半田、Sn−Cu系半田、Sn−Zn系半田、Sn−Bi系半田等の鉛フリー半田合金を挙げることができる。
半田の形状は、例えば、箔、シート、ワッシャー、リング、ペレット、ディスク、リボン、インゴット(棒)、ワイヤー(線)、粉末(粒)、正方形、長方形、ボール、テープ、等であり、仮固定剤で仮止めできる限り形状は問わない。仮止めのし易さから、箔、ボールの形状が好ましい。半田箔の厚みは、例えば100μm程度である。
仮固定剤は、半田付け対象物に半田を仮止めするものである。例えば、半田箔のように薄くて軽量なものは、仮固定剤として溶剤のみを用いることにより、溶剤の表面張力で箔を仮止めできる。すなわち、仮固定剤は溶剤であってもよい。または、半田の形状によっては溶剤に粘度調整剤を添加したものであってもよい。仮固定剤の粘性は半田を仮止めできる程度に調整すればよく、半田の形状に合わせて粘度調整剤の量を適宜調節する。
このように、溶剤や粘度調整剤は粘度調整の程度により種類や添加量を適宜変更することができる。溶剤や粘度調整剤は、例えば撹拌して混合または加熱しながら撹拌して混合すればよい。
なお、仮固定剤は半田が溶融する気圧・温度で完全に気化するものであり、半田接合後には残渣とならないものが好ましい。
溶剤は、一般に用いられる液体溶剤や高粘性溶剤を用いることができる。例えば、アニリン、アミルアルコール、イソブチルアルコール、エタノール、エチレングリコールモノメチルエーテル、エチレングリコールモノメチルエーテルアセテート、エチルラクテート、エチレングリコールエチルエーテル、エチレングリコールエチルエーテルアセテート、エチレングリコールプロピルエーテル、ジエチレングリコールジメチルエーテル、ジプロピレングリコールジメチルエーテル、ジエチレングリコールエチルメチルエーテル、ジエチレングリコールイソプロピルメチルエーテル、ジプロピレングリコールモノメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールモノエチルエーテル、ジメチルスルホキシド、プロピレングリコール、プロピレングリコールモノメチルエーテル、プロピレングリコールメチルエーテルアセテート、プロピレングリコールジアセテート、プロパノール、ブチルアルコール、水、2−フェノキシエタノール、1,4−ジオキサン、3−メトキシ−3−メチル−1−ブタノール等が挙げられる。前記溶剤は、単独で、あるいは複数種類を混合して用いることができる。溶剤は、入手のし易さ、環境への影響、沸点の低さから、エタノール、プロパノール、水が好ましい。
粘度調整剤は、仮固定剤の粘度調整や物質の固着を促進させる。粘度調整剤は、還元時の気圧・温度以下で気化するものが好ましく、活性物質でない(非イオン性の)ものが好ましい。還元時の温度は、還元ガスの種類により決まるため、還元ガスに合わせて適宜選択する。
例えば、ウレア、シリカ、ポリマー(アクリル酸系、カルボン酸系など)、硬化ひまし油、蜜ロウ、カルナバワックス等が挙げられる。前記粘度調整剤は、単独で、あるいは複数種類を混合して用いることができる。
粘度調整剤を還元時の気圧・温度以下で気化させることができると、粘度調整剤が半田内に残渣として残らず、活性物質ではないため半田付け対象物(金属)を腐食させることもなく、洗浄も不要となるため好ましい。
次に、図2の半田付け装置1を用いて、本願の半田付け製品の製造方法のうち装置に関わる工程をより具体的に説明する。しかし、本願発明に用いることのできる装置は半田付け装置1に限られない。
図2は、半田付け装置1の概略構成図である。半田付け装置1は、被接合部材の半田接合が行われる空間である処理空間11sを形成するチャンバ11を有する処理部10と、還元ガスとしてのギ酸ガスFをチャンバ11に供給するギ酸供給部20と、半田付け装置1内のギ酸ガスFを排出する前に無害化させる触媒ユニット33と、半田付け装置1の動作を制御する制御装置50と、これらを収容する筐体100とを備えている。
以下、基板W、半田S、電子部品Pが積重されて半田が溶融していない状態のものを被接合部材B(基板W、半田S、電子部品P)といい、半田Sが溶融して基板Wと電子部品Pとが接合された状態のものを半田付け製品Cということとする。
チャンバ11の内部には、被接合部材Bが載置されるキャリアプレート12と、キャリアプレート12を加熱するヒータ13とが設けられている。
本実施の形態では、気化する温度が還元温度よりも低い場合で説明しているが、気化する温度は下記の還元温度と同一でもよい。同一の場合は、仮固定剤Aの一部の蒸発と被接合部材Bの還元が同時に起こることになる。すなわち、(S4)工程と次工程である(S5)工程および(S6)工程が並行する場合が存在する。
11 チャンバ
11s 処理空間
20 ギ酸供給部
31 真空ポンプ
33 触媒ユニット
41v メイン排気弁
50 制御装置
100 筐体
A 仮固定剤
B 被接合部材
C 半田付け製品
F 還元ガス、ギ酸ガス
G 気体
N 不活性ガス
P 電子部品
S 半田
W 基板
Claims (8)
- 半田と、前記半田を仮止めする仮固定剤とを提供する提供工程と;
前記仮固定剤で前記半田を半田付け対象物に仮止めする仮止工程と;
前記半田を仮止めした半田付け対象物を、真空中に置くか、または、前記半田が溶融する温度よりも低い所定の温度に加熱して、前記仮固定剤を気化させ前記半田と前記半田付け対象物の間に間隙を生じさせる気化工程と;
前記気化工程に並行して、またはその後に、前記半田が溶融する温度よりも低い所定の温度で、前記気化工程により残された前記半田と前記半田付け対象物を還元ガスで還元する還元工程と;
前記還元工程の後に、前記半田付け対象物を前記半田が溶融する温度以上の所定の温度に加熱して前記半田を溶融する半田溶融工程を備える;
半田付け製品の製造方法。 - 前記気化工程前に、前記半田を仮止めした半田付け対象物を不活性ガス中に置く不活性ガス工程をさらに備える;
請求項1に記載の半田付け製品の製造方法。 - 前記気化工程は、前記半田付け対象物が真空中にある状態で加熱して、前記仮固定剤を気化させる、
請求項1または請求項2に記載の半田付け製品の製造方法。 - 前記還元工程は、前記半田付け対象物が真空中にある状態で、前記間隙に還元ガスを導入し、前記半田付け対象物を還元する、
請求項1乃至請求項3のいずれか1項に記載の半田付け製品の製造方法。 - 前記半田溶融工程は、前記半田付け対象物が真空中にある状態で、前記半田付け対象物を半田が溶融する温度以上に加熱して前記半田を溶融し、
前記溶融後、圧力を上げて、前記半田内部の空洞(ボイド)を圧縮して小さくする、または無くすために、前記真空を破壊する真空破壊工程と;
前記真空破壊工程の後に、前記半田付け対象物を冷却する冷却工程をさらに備える;
請求項1乃至請求項4のいずれか1項に記載の半田付け製品の製造方法。 - 前記半田がプリフォーム半田であり、
前記仮固定剤が溶剤および粘度調整剤を含み、
前記仮固定剤の沸点が前記半田の溶融温度よりも低い、
請求項1乃至請求項5のいずれか1項に記載の半田付け製品の製造方法。 - 前記半田がプリフォーム半田であり、
前記仮固定剤が溶剤であり、
前記溶剤の沸点が前記半田の溶融温度よりも低い、
請求項1乃至請求項5のいずれか1項に記載の半田付け製品の製造方法。 - 前記還元ガスがギ酸ガスである、
請求項1乃至請求項7のいずれか1項に記載の半田付け製品の製造方法。
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US20180326545A1 (en) * | 2015-09-30 | 2018-11-15 | Origin Electric Company, Limited | Method for producing soldered product |
US10843300B2 (en) * | 2015-09-30 | 2020-11-24 | Origin Company, Limited | Method for producing soldered product |
WO2019163575A1 (ja) * | 2018-02-23 | 2019-08-29 | 富士フイルム株式会社 | 接合体の製造方法、仮固定部材、および積層体 |
JPWO2019163575A1 (ja) * | 2018-02-23 | 2021-01-14 | 富士フイルム株式会社 | 接合体の製造方法、仮固定部材、および積層体 |
JP7431831B2 (ja) | 2019-01-09 | 2024-02-15 | クリック アンド ソッファ インダストリーズ、インク. | 半導体素子を基板にボンディングする方法、および関連ボンディングシステム |
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TW201718161A (zh) | 2017-06-01 |
US20180326545A1 (en) | 2018-11-15 |
EP3358918A4 (en) | 2018-08-08 |
CN108141965A (zh) | 2018-06-08 |
TWI653116B (zh) | 2019-03-11 |
US10843300B2 (en) | 2020-11-24 |
EP3358918A1 (en) | 2018-08-08 |
WO2017057649A1 (ja) | 2017-04-06 |
JP6042956B1 (ja) | 2016-12-14 |
EP3358918B1 (en) | 2019-11-13 |
CN108141965B (zh) | 2019-05-31 |
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