TWI653116B - 焊接製品的製造方法 - Google Patents
焊接製品的製造方法 Download PDFInfo
- Publication number
- TWI653116B TWI653116B TW105131585A TW105131585A TWI653116B TW I653116 B TWI653116 B TW I653116B TW 105131585 A TW105131585 A TW 105131585A TW 105131585 A TW105131585 A TW 105131585A TW I653116 B TWI653116 B TW I653116B
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- Prior art keywords
- solder
- temperature
- manufacturing
- vacuum
- soldered
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/3613—Polymers, e.g. resins
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- B23K35/38—Selection of media, e.g. special atmospheres for surrounding the working area
- B23K35/383—Selection of media, e.g. special atmospheres for surrounding the working area mainly containing noble gases or nitrogen
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
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- B23K35/262—Sn as the principal constituent
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Abstract
本發明係不使用治具而進行焊接之焊接製品的製造方法。本發明之焊接製品之製造方法,係具備下列步驟:提供步驟,係提供焊料、及使焊料暫固定之暫固定劑;暫固定步驟,係以暫固定劑使焊料暫固定於焊接對象物;氣化步驟,係將暫固定有焊料之焊接對象物置放於真空中、或加熱至比焊料熔融之溫度更低之特定溫度,使暫固定劑氣化並於焊料與焊接對象物之間產生間隙;還原步驟,係與氣化步驟同時進行或在其後,以比焊料熔融之溫度更低的特定溫度,將由氣化步驟所殘留之焊料與焊接對象物以還原氣體進行還原;以及焊料熔融步驟,係在還原步驟之後,將焊接對象物加熱至焊料熔融之溫度以上之特定溫度,而使焊料熔融。
Description
本發明係關於焊接製品之製造方法,特別關於以焊接裝置進行焊接時,不使用治具而進行焊接之焊接製品的製造方法。
焊料接合時,通常為了使焊接對象物及焊料滯留於特定位置且以不偏位之方式接合,而使用固定此等用之治具(亦稱為托盤(pallet))。
於專利文獻1中係揭示一種為了使半導體晶片不偏移地搭載於絕緣電路基板上之特定位置並良好地焊料接合而使用之半導體晶片的定位治具(專利文獻1、段落0001、0006至0010)。
但是,如此之治具係必須配合焊接對象物之形狀而準備其整個形狀。再者,安裝或卸除則需要時間及花費功夫,造成作業者之負擔。並且,有焊料溶接用之熱被治具奪取之問題。
[專利文獻1]日本特開2013-65662號公報
本發明係有鑑於上述之課題,目的在於提供一種不使用治具而進行焊接之焊接製品之製造方法。
為了達成上述目的,本發明之第1態様的焊接製品之製造方法,係具備下列步驟:提供步驟,係提供焊料、及使前述焊料暫固定之暫固定劑;暫固定步驟,係以前述暫固定劑使前述焊料暫固定於焊接對象物;氣化步驟,係將暫固定有前述焊料之焊接對象物置放於真空中、或加熱至比前述焊料熔融之溫度更低之特定溫度,使前述暫固定劑氣化並於前述焊料與前述焊接對象物之間產生間隙;還原步驟,係與前述氣化步驟同時進行或在其後,以比前述焊料熔融之溫度更低的特定溫度,將由前述氣化步驟所殘留之前述焊料與前述焊接對象物以還原氣體進行還原;以及焊料熔融步驟,係在前述還原步驟之後,將前述焊接對象物加熱至前述焊料熔融之溫度以上之特定溫度,而使前述焊料熔融。
所謂焊料係指被利用於焊接之合金。
所謂「真空中」係指低於大氣之壓力(所謂之減壓)之空間。
一眼看來為平滑且平坦之物質之表面,在原子、分子
等級時則可能具有無數之凹凸。因此,若如此地構成,則藉由暫固定劑之氣化,而於焊料及焊接對象物間產生因上述凹凸所致之間隙。本案發明係藉由在此間隙中導入還原氣體,而可有效地進行焊料及焊接對象物之還原。
再者,藉由採用真空,可促進暫固定劑之氣化。並且,即使為常壓時之沸點高於還原時之溫度的暫固定劑,亦可使用。如此,可有效率地使暫固定劑氣化,並可增加可使用之溶劑的種類。
本發明之第2態様的焊接製品之製造方法係在上述本發明第1態様之焊接製品之製造方法中,於前述氣化步驟前,更具備下述步驟:惰性氣體步驟,係將暫固定有前述焊料之焊接對象物放置於惰性氣體中。
若如此地構成,即可防止焊料及焊接對象物被存在於環境中之微量氧或其他氣體所氧化、腐蝕。
本發明之第3態様的焊接製品之製造方法,係在上述本發明第1態様或第2態様的焊接製品之製造方法中,於前述氣化步驟,係以使前述焊接對象物在真空中之狀態進行加熱,使前述暫固定劑氣化。
若如此地構成時,即可促進暫固定劑之氣化。再者,即使為常壓時之沸點高於還原時之溫度的暫固定劑,亦可使用。如此,可有效率地使暫固定劑氣化,並可增加可使用之溶劑的種類。
本發明之第4態様的焊接製品之製造方法,係在上述本發明之第1態様至第3態様之任一態様的
焊接製品之製造方法中,於前述還原步驟,係以使前述焊接對象物在真空中之狀態,於前述間隙導入還原氣體,使前述焊接對象物還原。
若如此地構成,即可使還原氣體易滲入焊料及焊接對象物間等之間隙。
本發明之第5態様的焊接製品之製造方法,係在上述本發明第1態様至第4態様之任一態様的焊接製品之製造方法中,前述焊料熔融步驟,係以使前述焊接對象物在真空中之狀態,將前述焊接對象物加熱至焊料熔融之溫度以上,而使前述焊料熔融;該製造方法更具備下述步驟:真空破壞步驟,係在前述熔融後,提高壓力,壓縮前述焊料內部之空洞(void)而使其減小或消除,破壞前述真空;以及冷卻步驟,係在前述真空破壞步驟之後,冷卻前述焊接對象物。
若如此地構成,即可在真空破壞步驟中以使焊料熔融之狀態破壞空洞,並在破壞空洞後使焊料固化,故可抑制因焊料中之空洞所致之疲勞壽命(fatigue life)降低。
本發明之第6態様的焊接製品之製造方法,係在上述本發明第1態様至第5態様之任一態様的焊接製品之製造方法中,前述焊料為預成形(preform)焊料,前述暫固定劑包含溶劑及黏度調整劑,前述暫固定劑之沸點低於前述焊料之熔融溫度。
若如此地構成,則因暫固定劑之沸點低於焊料熔融溫度,故在成為焊料熔融之溫度之前,暫固定劑係完全氣化,可避免焊料熔融後暫固定劑被攝入於焊料內部。
本發明之第7態様的焊接製品之製造方法,係在上述本發明之第1態様至第5態様之任一態様的焊接製品之製造方法中,前述焊料為預成形焊料,前述暫固定劑為溶劑,前述溶劑之沸點低於前述焊料之熔融溫度。
若如此地構成,則因溶劑之沸點低於焊料熔融溫度,故在成為焊料熔融之溫度之前,溶劑係完全氣化,可避免焊料熔融後溶劑被攝入於焊料內部。再者,可極容易準備暫固定劑。並且,可用不含有如活性物質等有害的物質之方式來形成暫固定劑。
本發明之第8態様的焊接製品之製造方法,係在上述本發明之第1態様至第7態様之任一態様的焊接製品之製造方法中,前述還原氣體為蟻酸氣體。
若如此地構成,即可用低於300℃之溫度還原焊料及焊接對象物。
若依據本發明,因在焊接時不使用治具,故可減輕作業者之負擔,且同時可縮短焊接步驟之時間,提高生產效率。再者,亦不會有焊料溶接用之熱被奪取之情形。並且,因暫固定劑會氣化,故可抑制於焊接後殘留之助溶劑殘渣等,焊接製品不需要洗淨。
1‧‧‧焊接裝置
10‧‧‧處理部
11‧‧‧腔室
11a‧‧‧搬入出口
11d‧‧‧閘門
11s‧‧‧處理空間
12‧‧‧載板
13‧‧‧加熱器
20‧‧‧蟻酸供給部
31‧‧‧真空泵
33‧‧‧觸媒單元
41v‧‧‧主排氣閥
50‧‧‧控制裝置
100‧‧‧框體
A‧‧‧暫固定劑
B‧‧‧被接合構件
C‧‧‧焊接製品
E‧‧‧排出氣體
F‧‧‧還原氣體、蟻酸氣體
G‧‧‧氣體
N‧‧‧惰性氣體
P‧‧‧電子零件
S‧‧‧焊料
W‧‧‧基板
第1圖係表示本發明焊接製品之製造方法的流程圖。
第2圖係焊接裝置1之概略構成圖。
第3圖係詳細表示本發明之焊接製品之製造方法中有關焊接裝置之步驟的流程圖,並且為在使用焊接裝置1時所說明者。
本申請案係依據日本國在2015年9月30日所申請之日本特願2015-195198號,其內容係一部分構成本申請案之內容。本發明係可藉由以下之詳細說明而更加完全理解。本發明之更進一步之應用範圍係藉由以下之詳細說明而可更為清楚。然而,詳細說明及特定實例係本發明之較佳實施形態,只是為了說明之目的而記載者。此係因源自該詳細說明之各種變更、改變,在本發明之精神與範圍內,該發明所屬技術領域中具有通常知識者應可了解之故。本案申請人並無將所記載之實施形態之任一者皆公開於公衆之意圖,其改變、替代案中,申請專利範圍內於文義上可能未包含者,亦屬於在均等論下之發明的一部分。
以下,參照圖式而說明有關本發明之實施形態。又,在各圖中互為相同或相當之部分係賦予相同或類似之符號,省略重複之說明。又,本發明係不限制於以下之實施形態。
〔焊接製品之製造方法概要〕
參照第1圖,說明本發明之第1實施形態的焊接製品
之製造方法。本案之焊接製品之製造方法係使用焊接裝置而進行焊接時之製造方法。
第1圖係表示焊接製品之製造方法的流程圖。本案發明係具備下列步驟:(1)焊料與暫固定劑之提供步驟、(2)焊料之暫固定步驟、(4)暫固定劑之氣化步驟、(5)焊料與焊接對象物之還原步驟、(6)焊料熔融步驟。再者,依需要而亦可具備下列步驟:(3)惰性氣體步驟、(7)真空破壞步驟、(8)冷卻步驟。
以下詳細說明各步驟。
(1)焊料與暫固定劑之提供步驟
此為準備焊料與暫固定劑之步驟。所謂準備係只要是使焊料與暫固定劑存在之狀態即可,可為準備既有品之情形,亦可為調製暫固定劑而準備之情形。
又,所謂暫固定劑係為了將焊料暫固定於焊接對象物所使用者。
(2)焊料之暫固定步驟
此為於焊接對象物塗佈暫固定劑,並在所塗布之暫固定劑上配置焊料,而將焊料予以暫固定之步驟。暫固定劑之塗布方法係無特別限定。
(3)惰性氣體步驟
此為將焊料及焊接對象物配置於惰性氣體環境下之步驟。惰性氣體係可舉例如氮或氬。
(4)暫固定劑之氣化步驟
此為藉由加熱或減壓(真空)而使暫固定劑氣化之步
驟。
例如,若將焊接對象物、暫固定劑、焊料進行加熱,則首先會開始暫固定劑之氣化。若暫固定劑氣化,則熔融溫度高於氣化溫度之焊料及焊接對象物不會熔融,而於焊料及焊接對象物間產生因表面之凹凸所致之間隙。
(5)焊料與焊接對象物之還原步驟
此為更進一步加熱至還原溫度,使暫固定劑完全氣化,且同時藉由還原氣體而使焊料與焊接對象物還原之步驟。還原係可與暫固定劑之氣化同時進行,亦可在氣化後進行。又,還原係可在常壓下進行,亦可在減壓(真空)下進行。
在此,所謂還原係指在焊接時除去焊接對象物之表面或焊料表面之酸化膜等。還原氣體係可舉例如蟻酸氣體、羧酸之氣體、羧酸以外之有機酸之氣體、有機酸以外之有機化合物之氣體、有機化合物以外之其他還原性之氣體(例如氫氣)。從使還原溫度低於焊料之熔融溫度的觀點及容易取得性之觀點來看,還原氣體係以蟻酸氣體較佳。
(6)焊料熔融步驟
此為進一步加熱至焊料熔融溫度而進行焊接之步驟。
焊料較佳係在前述還原氣體所致之還原溫度及還原時之氣壓中不熔融者。亦即,焊料熔融之溫度係為高於還原溫度之任意溫度,在本實施形態係較還原溫度高10至50℃之溫度。
(7)真空破壞步驟
此為在真空狀態使焊料熔融時,於焊料熔融後提高壓力,壓縮焊料內部之空洞(void)之步驟。可藉由此步驟,使因捲入熔融焊料之空氣而形成於焊料內之空洞縮小或消除。
(8)冷卻步驟
此為冷卻熔融焊料而使其固化之步驟。冷卻係可為自然冷卻,亦可為強制冷卻。藉由熔融焊料之固化,而製造焊接製品。又,在本發明之方法中係不存在殘渣,故不需要焊接製品之洗淨。
本發明之暫固定劑之氣化溫度、焊料、焊接對象物之熔點、還原氣體之還原溫度係在特定之氣壓(例如常壓或減壓)下具有以下之關係。所謂「熔點」係指無關於氣壓而使物質熔融之溫度。
暫固定劑之氣化溫度≦還原溫度<焊料、焊接對象物之熔點
〔焊料〕
在本案發明中係使用預成形(成形)焊料。因使用預成形焊料,故相較於膏劑(paste)單體之焊接,可增加焊料量。並且,藉由預成形焊料,可掌控正確之焊料量。
又,在本說明書中,當稱為焊料時,係指預成形焊料。
焊料之合金組成係無特別限制。可使用目前於凸塊(bump)之形成或印刷基板之安裝所使用之各種焊料合金。可舉例如作為無鉛焊料而使用之Sn-Ag系焊料、Sn-Ag-Cu系焊料、Sn-Ag-Cu-Bi系焊料、Sn-Ag-In-Bi系焊料、Sn-Cu
系焊料、Sn-Zn系焊料、Sn-Bi系焊料等無鉛焊料合金。
焊料之形狀係例如箔、片(sheet)、墊圈(washer)、環(ring)、顆粒(pellet)、碟片(disc)、緞帶(ribbon)、錠(棒)、線(wire)、粉末(粒)、正方形、長方形、球、帶(tape)等,只要是可使用暫固定劑進行暫固定者,即不論形狀。從暫固定之容易性而言,以箔、球之形狀為較佳。焊料箔之厚度係例如為100μm左右。
〔暫固定劑〕
暫固定劑係將焊料予以暫固定於焊接對象物者。例如,如焊料箔般薄且輕量者,係藉由只使用溶劑作為暫固定劑,即可藉溶劑之表面張力將箔予以暫固定。亦即,暫固定劑可為溶劑。或者是,可為依據焊料之形狀而於溶劑中添加黏度調整劑者。暫固定劑之黏性係只要調整成可將焊料暫固定之程度即可,可配合焊料之形狀而適當調節黏度調整劑之量。
如此地,溶劑或黏度調整劑係可依據黏度調整之程度而適當變更種類或添加量。溶劑或黏度調整劑係只要是例如攪拌而混合、或一邊加熱一邊攪拌而混合即可。
又,暫固定劑係於焊料會熔融之氣壓/溫度中完全氣化者,並以在焊料接合後不會成為殘渣者較佳。
‧溶劑
溶劑係可使用一般所使用之液體溶劑或高黏性溶劑。可舉例如苯胺、戊醇、異丁醇、乙醇、乙二醇單甲基醚、乙二醇單甲基醚乙酸酯、乳酸乙酯、乙二醇乙基醚、乙二
醇乙基醚乙酸酯、乙二醇丙基醚、二乙二醇二甲基醚、二丙二醇二甲基醚、二乙二醇乙基甲基醚、二乙二醇異丙基甲基醚、二丙二醇單甲基醚、二乙二醇二乙基醚、二乙二醇單乙基醚、二甲基亞碸、丙二醇、丙二醇單甲基醚、丙二醇甲基醚乙酸酯、丙二醇二乙酸酯、丙醇、丁醇、水、2-苯氧基乙醇、1,4-二烷、3-甲氧基-3-甲基-1-丁醇等。前述溶劑係可單獨或混合複數種類而使用。溶劑係從取得容易性、對環境之影響、沸點之低度而言,以乙醇、丙醇、水為佳。
溶劑較佳係於還原時之氣壓/溫度以下會氣化者。溶劑氣化之溫度係可舉例如相較於還原溫度而為較低或相同之任意溫度,可舉例如0至100℃。藉由調整環境之壓力的機構,即使是在常壓時之沸點高於還原溫度之溶劑,亦可使溶劑之氣化溫度變成低於還原溫度。如此地,溶劑只要是在特定氣壓中於還原溫度以下進行氣化者即可。
‧黏度調整劑
黏度調整劑係促進暫固定劑之黏度調整或物質之固定。黏度調整劑較佳係在還原時之氣壓/溫度以下進行氣化者,以非活性物質者(非離子性者)為佳。還原時之溫度係可依據還原氣體之種類來決定,故配合還原氣體而適當選擇。
可舉例如脲、二氧化矽、聚合物(丙烯酸系、羧酸系等)、硬化蓖麻油、蜜蠟、棕櫚臘等。前述黏度調整劑係可
單獨或混合複數種類而使用。
若可使黏度調整劑在還原時之氣壓/溫度以下進行氣化,則黏度調整劑於焊料內就不會以殘渣之形式殘存,且因其並非活性物質,故不會使焊接對象物(金屬)腐蝕,亦不需要洗淨,而為較佳。
就一例而言,使用蟻酸作為還原氣體並使還原溫度為約200℃時,暫固定劑係只要至還原時之前進行氣化即可。因此,於昇溫中使其氣化、或可設置用以使其氣化之溫度保持時間。又,若使用蟻酸,即可以低於其他還原氣體的溫度還原,故為較佳。
〔焊接製品之製造方法之詳細內容〕
其次,使用第2圖之焊接裝置1,更具體說明本案焊接製品之製造方法中有關裝置之步驟。但是,本案發明所可使用之裝置係不限定於焊接裝置1。
第2圖係焊接裝置1之概略構成圖。焊接裝置1係具備:處理部10,係具有形成處理空間11s的腔室11,該處理空間11s係用以進行被接合構件之焊料接合的空間;蟻酸供給部20,係將作為還原氣體之蟻酸氣體F供給至腔室11;觸媒單元33,係在將焊接裝置1內之蟻酸氣體F排出之前,使其無害化;控制裝置50,係控制焊接裝置1之動作;收容此等之框體100。
焊接裝置1係將作為焊接對象物之基板W及電子零件P以焊料S接合之裝置。基板W及電子零件P係均於表面具有金屬部分,以該金屬部分透過焊料而導通
之方式接合。首先,在搬入腔室11之前,於基盤W上塗布暫固定劑A,載置焊料S而暫固定,更進一步,於焊料S上塗布暫固定劑A,載置電子零件P而暫固定。如此地,基板W及電子零件P係以夾著暫固定劑A/焊料S/暫固定劑A之狀態搬入腔室11,在腔室11內使暫固定劑A氣化之後,焊料S係被熔融而接合。
以下,將由基板W、焊料S、電子零件P所積層且焊料未熔融之狀態者稱為被接合構件B(基板W、焊料S、電子零件P),並將焊料S熔融而使基板W及電子零件P被接合之狀態者稱為焊接製品C。
腔室11係以可藉由使用閘門11d堵塞住搬入出口11a而封閉處理空間11s之方式構成。腔室11係採用即使在將處理空間11s減壓至約10Pa(絕對壓力)時亦可承受之材料或形狀。
於腔室11之內部係設有:載置有被接合構件B之載板12、加熱載板12之加熱器13。
加熱器13係以可將載板12加熱至比焊料之熔融溫度更高的接合溫度之方式構成。
蟻酸供給部20係將蟻酸氣體F導入腔室11內。又,在本說明書中係使用蟻酸氣體F作為還原氣體,但只要是可使在基板W及電子零件P之接合面所生成之金屬氧化物還原者,亦可為蟻酸氣體F以外之其他還原性氣體。在本說明書中,從使還原溫度變成低於焊料之熔融溫度之觀點、及取得容易性之觀點而言,係使用蟻酸氣體F
作為還原氣體。
觸媒單元33係將從焊接裝置1所排出之排出氣體E中之蟻酸予以無害化到使其對環境不造成影響之程度的機器。又,氣體G係從腔室11排出之氣體的總稱。
真空泵31,係以可將腔室11內之壓力減壓至約10Pa(絕對壓力)之方式,配設為將腔室11內之氣體G排出之減壓泵。
控制裝置50係以可開關閘門11d之方式構成。又,控制裝置50係透過加熱器13之ON-OFF及輸出功率之變更,以可進行載板12之加熱之方式構成。又,控制裝置50係以可將蟻酸氣體F朝腔室11供給之方式構成。又,控制裝置50係以可控制真空泵31之啟動停止之方式構成。控制裝置50係記憶後述之焊接裝置1動作之程序。
繼而,參照第3圖,在與焊接裝置之關係中詳細說明本發明之實施形態的焊接製品之製造方法。第3圖係表示使用焊接裝置1時之焊接製品的焊料接合順序的流程圖。在以下之說明中,述及焊接裝置1構成時,係適宜參照第2圖。
因將被接合構件B搬入焊接裝置1中,故若按壓開啟閘門11d之按紐(未圖示),則控制裝置50會使真空泵31作動,而在開始腔室11內之氣體G的排氣之後(S1),打開閘門11d。一併,以使載板12之大部分移出腔室11之外側的方式,使載板12移動。因在開啟閘門11d
前使腔室11內之氣體G從腔室11排出,故即使打開閘門11d,亦可防止腔室11內之氣體G透過搬入出口11a而流出至焊接裝置1之外。當閘門11d成為開啟狀態,載板12之大部分被移出至腔室11之外側,且被接合構件B載置於載板12時,伴隨著載板12朝腔室11內之移動,被接合構件B會被搬入腔室11內(被接合構件搬入步驟:S2)。
若該被接合構件B被搬入至腔室11內,則控制裝置50會關閉閘門11d,而密閉腔室11內。其次,為了將閘門11d開啟時流入腔室11內之大氣除去並使其成為惰性氣體之環境,故控制裝置50會進行腔室11內之氣體G之排氣,其後導入惰性氣體N。藉由反覆進行此步驟,使腔室11內之氧濃度降低(惰性氣體置換步驟:S3)。氧濃度係以5ppm以下為佳。惰性氣體N為例如氮氣。
其次,控制裝置50係使加熱器13為ON,將載板12之溫度、甚至被接合構件B之溫度升溫至暫固定劑A會氣化(蒸發)之溫度(S4)。伴隨升溫至氣化之溫度,暫固定劑A會蒸發,從被接合構件B被除去。本實施之形態中係為了促進暫固定劑A之蒸發,故可使腔室11內之壓力成為真空(減壓)。
本實施形態係以氣化之溫度低於還原溫度之情形做說明,但氣化之溫度可與下述之還原溫度相同。在相同之情形時,暫固定劑A之一部分蒸發與被接合構件B之還原係可同時發生。亦即,存在有(S4)步驟與其後續步驟之(S5)步驟及(S6)步驟並行之情形。
其次,控制裝置50係將加熱器13維持於ON,將載板12之溫度、甚至被接合構件B之溫度升溫至還原溫度(S5)。還原溫度係藉由蟻酸而使被接合構件B之氧化物還原之溫度。若至還原溫度為止使昇溫結束,則控制裝置50係將蟻酸氣體F從蟻酸供給部20供給至腔室11內(S6)。在此,本實施形態中,還原溫度係變成低於焊料S之熔融溫度,故焊料S不會熔融,蟻酸氣體會滲入藉由暫固定劑A之氣化所形成之間隙中,在被接合構件B被焊料接合之前,適宜地除去氧化膜。若在使腔室11內成為真空之後才進行蟻酸氣體F之供給,則蟻酸氣體F會容易滲入間隙。使被接合構件B之溫度升溫至還原溫度之步驟(S5)及使蟻酸氣體F供給至腔室11內之步驟(S6)係相當於還原步驟。
若還原步驟(S5、S6)終止,則在繼續維持腔室11內之蟻酸氣體F環境之情形下,升高加熱器13之輸出功率,將載板12之溫度、甚至被接合構件B之溫度升溫至接合溫度而使焊料熔融,進行被接合構件B之焊料接合(接合步驟:S7)。接合溫度係比焊料S之熔融溫度更高的任意溫度,本實施形態係設為比熔融溫度高30至50℃之溫度。
若被接合構件B之焊料熔融,則控制裝置50係使加熱器13為OFF。藉由開始冷卻,而降低被接合構件B之溫度,若成為未達熔點,則焊料會固化而成為焊接製品C。此時,藉由將載板12強制性冷卻,可加快焊料
之固化。其次,將真空泵31之作動及主排氣閥41v開啟,從腔室11內排出蟻酸氣體F(S8),並藉由導入惰性氣體N,而使腔室11內成為常壓。從腔室11內所排出之蟻酸氣體F係流入觸媒單元33中。蟻酸氣體F係在觸媒單元33中使蟻酸被分解,蟻酸之濃度降低至特定濃度以下而被無害化,以排出氣體E之形式而從焊接裝置1被排出(S9)。
若焊接製品C從腔室11被搬出(S10),則控制裝置50係判斷是否有進行連續運轉(S11)。當有進行連續運轉時,則返回至進行腔室11內氣體G之排氣的步驟(S1)。另一方面,當不進行連續運轉時,則進行維護運轉(S12)。
如以上所說明般,若依據焊接裝置1,則於框體100內收容有處理部10、蟻酸供給部20、觸媒單元33、控制裝置50等在真空中進行焊料接合時所需之機器,故可在焊接裝置1內適當地完成進行使用蟻酸氣體F之焊料接合。又,若依據本實施形態之焊接製品C之製造方法,則可使用焊料S、暫固定劑A、蟻酸氣體F而進行適當之焊接或真空焊接。
在以上之說明中,雖然是使用焊料S以及基板W、電子零件P作為被接合構件B而說明,但被接合構件係只要為在表面具有適於焊料接合之金屬部分的構件,亦可為基板W、電子零件P以外之構件。
又,在以上之說明中,係使被接合構件B在蟻酸氣體F之環境下升溫至接合溫度而進行熔融接合,
但亦可為在真空(例如約100Pa(絕對壓力)左右)中升溫至接合溫度而進行熔融接合。在使腔室11內成為真空之後才進行被接合構件B之焊料接合時,係亦可藉由在加熱器13之OFF後導入惰性氣體N而破壞腔室11內之真空。若在焊料為熔融之狀態下導入惰性氣體N時,可壓縮破壞空洞(void)。壓縮破壞空洞之後若使焊料固化,則可更進一步抑制在焊料中之空洞所致的疲勞壽命降低。又,使被接合構件B在真空中進行熔融接合時,處理排出步驟(S8、S9)係在還原步驟(S5、S6)之後進行。
又,在以上之說明中,係使被接合構件B在真空(例如約100Pa(絕對壓力)左右)中升溫至還原溫度而進行還原,但亦可不在真空中而是在常壓下進行還原步驟(S5、S6)及接合步驟(S7)以進行焊料接合。
本案之焊接製品之製造方法係可更具備下列步驟:將焊料接合結束後之焊接對象物予以塗佈的塗佈步驟。本發明之焊料接合係因無殘渣,故在與塗佈劑之密着性上不會產生問題。因而,藉由以塗佈步驟進行塗佈,而保護焊接部。
如以上所述,本案發明係使用暫固定劑而將作為焊接對象物之被接合構件予以暫固定之後,進行焊料接合。因而,相較於使用治具進行焊料接合之習知方法,可極容易進行焊料接合。
將本說明書中所引用之包含刊行物、專利申請案及專利之全部文獻,個別地具體表示各文獻並參考
組入,又,將其所有內容以與在此所敘述者相同的程度加以參考並組入於此。
本發明之說明所相關(特別是以下之請求項所相關)並使用之名詞及同様之指示語之使用,係只要不是在本說明書中有特別指出或明顯與文章矛盾者,即可解釋為包括單數及複數之兩者。語句「具備」、「具有」、「含有」及「包含」係只要是無特別聲明,即解釋為開放性語詞(open-end term)(亦即表示「包含,但不限定」之意義)。本說明書中之數值範圍之陳述,係只要不是在本說明書中有特別指出者,即意指僅用以各別地述敘相當於其範圍內之各值的簡稱法,各值係如本說明書中所各別列舉般組入於說明書中。本說明書中所說明之全部方法,係只要不是在本說明書中有特別指出或明顯與文章矛盾者,即可依所有之適當順序進行。在本說明書中使用之所有的例或例示的措辭(例如「等」)係只要無特別聲明,即意指僅用以更充分說明本發明,而並非設為對於本發明之範圍的限制。說明書中之任何措辭,亦不該被解釋成在本發明之實施中為不可欠缺之未記載於請求項中之要素。
在本說明書中,係針對為了實施本發明而包含本發明人已知之最佳形態的本發明之較佳實施形態進行說明。就該發明所屬技術領域中具有通常知識而言,在閱讀完上述說明後,即可明瞭此等較佳實施形態之變形。本發明人係預期熟練者會適當使用如此之變形,並預定以本說明書中具體說明者以外之方法實施本發明。因此,本
發明係如根據法所允許般地,包含所有本說明書所附記之請求項記載之內容的變更及均等物。再者,只要不是在本說明書中有特別指出或明顯與文脈矛盾者,則全部之變形中的上述要素之任一組合亦包含於本發明中。
Claims (7)
- 一種焊接製品之製造方法,係具備下列步驟:提供步驟,係提供焊料、及使前述焊料暫固定之暫固定劑;暫固定步驟,係以前述暫固定劑使前述焊料暫固定於焊接對象物;氣化步驟,係將暫固定有前述焊料之焊接對象物置放於真空中、或加熱至比前述焊料熔融之溫度更低之特定溫度,使前述暫固定劑氣化並於前述焊料與前述焊接對象物之間產生間隙;還原步驟,係與前述氣化步驟同時進行或在其後,以比前述焊料熔融之溫度更低的特定溫度,將由前述氣化步驟所殘留之前述焊料與前述焊接對象物以還原氣體進行還原;以及焊料熔融步驟,係在前述還原步驟之後,將前述焊接對象物加熱至前述焊料熔融之溫度以上之特定溫度,而使前述焊料熔融;其中,在前述氣化步驟前,更具備下述步驟:惰性氣體步驟,係將暫固定有前述焊料之焊接對象物放置於惰性氣體中;並且,前述還原步驟係以使前述焊接對象物在真空中之狀態,於前述間隙導入還原氣體,將前述焊接對象物還原;前述焊料熔融步驟,係以使前述焊接對象物在真空中之狀態,將前述焊接對象物加熱至焊料熔融之溫度以上,而使前述焊料熔融;該製造方法更具備下述步驟:真空破壞步驟,係在前述熔融後,提高壓力,壓縮前述焊料內部之空洞(void)而使其減小或消除,破壞前述真空。
- 一種焊接製品之製造方法,係具備下列步驟:提供步驟,係提供焊料、及使前述焊料暫固定之暫固定劑;暫固定步驟,係以前述暫固定劑使前述焊料暫固定於焊接對象物;氣化步驟,係將暫固定有前述焊料之焊接對象物置放於真空中、或加熱至比前述焊料熔融之溫度更低之特定溫度,使前述暫固定劑氣化並於前述焊料與前述焊接對象物之間產生間隙;還原步驟,係與前述氣化步驟同時進行或在其後,以比前述焊料熔融之溫度更低的特定溫度,將由前述氣化步驟所殘留之前述焊料與前述焊接對象物以還原氣體進行還原;以及焊料熔融步驟,係在前述還原步驟之後,將前述焊接對象物加熱至前述焊料熔融之溫度以上之特定溫度,而使前述焊料熔融;其中,在前述氣化步驟前,更具備下述步驟:惰性氣體步驟,係將暫固定有前述焊料之焊接對象物放置於惰性氣體中;並且,前述氣化步驟係以使前述焊接對象物在真空中之狀態,使前述暫固定劑氣化;前述焊料熔融步驟,係以使前述焊接對象物在真空中之狀態,將前述焊接對象物加熱至焊料熔融之溫度以上,而使前述焊料熔融;該製造方法更具備下述步驟:真空破壞步驟,係在前述熔融後,提高壓力,壓縮前述焊料內部之空洞(void)而使其減小或消除,破壞前述真空。
- 如申請專利範圍第2項所述之焊接製品之製造方法,其中,前述還原步驟係以使前述焊接對象物在真空中之狀態,於前述間隙導入還原氣體,將前述焊接對象物還原。
- 如申請專利範圍第1至3項中任一項所述之焊接製品之製造方法,其中,該製造方法更具備下述步驟:冷卻步驟,係在前述真空破壞步驟之後,冷卻前述焊接對象物。
- 如申請專利範圍第1至3項中任一項所述之焊接製品之製造方法,其中,前述焊料為預成形焊料,前述暫固定劑包含溶劑及黏度調整劑,前述暫固定劑之沸點低於前述焊料之熔融溫度。
- 如申請專利範圍第1至3項中任一項所述之焊接製品之製造方法,其中,前述焊料為預成形焊料,前述暫固定劑為溶劑,前述溶劑之沸點低於前述焊料之熔融溫度。
- 如申請專利範圍第1至3項中任一項所述之焊接製品之製造方法,其中,前述還原氣體為蟻酸氣體。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6042956B1 (ja) * | 2015-09-30 | 2016-12-14 | オリジン電気株式会社 | 半田付け製品の製造方法 |
JP6627522B2 (ja) * | 2016-01-15 | 2020-01-08 | 富士電機株式会社 | 半導体装置用部材及び半導体装置の製造方法、及び半導体装置用部材 |
WO2019163575A1 (ja) * | 2018-02-23 | 2019-08-29 | 富士フイルム株式会社 | 接合体の製造方法、仮固定部材、および積層体 |
WO2019170211A1 (de) * | 2018-03-05 | 2019-09-12 | Heraeus Deutschland GmbH & Co. KG | Verfahren zur herstellung einer sandwichanordnung |
CN111757789A (zh) * | 2018-03-05 | 2020-10-09 | 贺利氏德国有限两合公司 | 制造夹层布置的方法 |
WO2019172410A1 (ja) * | 2018-03-09 | 2019-09-12 | 株式会社オリジン | フラックス、ソルダペースト、はんだ付けプロセス、はんだ付け製品の製造方法、bgaパッケージの製造方法 |
JP6439893B1 (ja) * | 2018-05-25 | 2018-12-19 | 千住金属工業株式会社 | ハンダボール、ハンダ継手および接合方法 |
JP6476342B1 (ja) * | 2018-10-15 | 2019-02-27 | オリジン電気株式会社 | 還元ガス供給装置及び処理済対象物の製造方法 |
US11205633B2 (en) | 2019-01-09 | 2021-12-21 | Kulicke And Soffa Industries, Inc. | Methods of bonding of semiconductor elements to substrates, and related bonding systems |
US11515286B2 (en) | 2019-01-09 | 2022-11-29 | Kulicke And Soffa Industries, Inc. | Methods of bonding of semiconductor elements to substrates, and related bonding systems |
JP6677844B1 (ja) * | 2019-04-26 | 2020-04-08 | 株式会社オリジン | 加熱装置及びはんだ接合済対象物の製造方法 |
KR20220038385A (ko) * | 2019-07-26 | 2022-03-28 | 가부시키가이샤 오리진 | 땜납붙이 제품 제조 장치 및 땜납붙이 제품의 제조 방법 |
JP7145839B2 (ja) * | 2019-12-18 | 2022-10-03 | 株式会社オリジン | はんだ付け基板の製造方法及びはんだ付け装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004253769A (ja) | 2003-01-31 | 2004-09-09 | Hitachi Metals Ltd | 半田バンプの製造方法及び製造装置 |
EP2587900A1 (en) | 2010-06-28 | 2013-05-01 | Ayumi Industry Co., Ltd. | Joint structure manufacturing method, heating and melting treatment method, and system for same |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6042956B2 (ja) * | 1978-03-18 | 1985-09-25 | カシオ計算機株式会社 | 電子楽器の楽音波形発生装置 |
US4712721A (en) * | 1986-03-17 | 1987-12-15 | Raychem Corp. | Solder delivery systems |
JP3294460B2 (ja) * | 1995-03-06 | 2002-06-24 | 株式会社日立製作所 | 回路基板の製造方法 |
JP3732639B2 (ja) * | 1998-01-08 | 2006-01-05 | 株式会社日立製作所 | はんだ付け方法および電子装置の製造方法 |
JPH11224981A (ja) * | 1998-02-06 | 1999-08-17 | Matsushita Electric Ind Co Ltd | 半田付け方法および半田バンプの形成方法 |
JP2000216334A (ja) * | 1999-01-25 | 2000-08-04 | Seiko Epson Corp | 半導体装置 |
US6445589B2 (en) * | 1999-07-29 | 2002-09-03 | Delphi Technologies, Inc. | Method of extending life expectancy of surface mount components |
JP4609617B2 (ja) * | 2000-08-01 | 2011-01-12 | 日本電気株式会社 | 半導体装置の実装方法及び実装構造体 |
JP3404021B2 (ja) * | 2001-01-18 | 2003-05-06 | 富士通株式会社 | はんだ接合装置 |
US7331502B2 (en) * | 2001-03-19 | 2008-02-19 | Sumitomo Bakelite Company, Ltd. | Method of manufacturing electronic part and electronic part obtained by the method |
US6713318B2 (en) * | 2001-03-28 | 2004-03-30 | Intel Corporation | Flip chip interconnection using no-clean flux |
US20130175323A1 (en) * | 2002-07-01 | 2013-07-11 | Jian Zhang | Serial thermal linear processor arrangement |
US8274161B2 (en) * | 2002-07-01 | 2012-09-25 | Semigear Inc | Flux-free chip to substrate joint serial linear thermal processor arrangement |
CN1477703A (zh) * | 2002-08-02 | 2004-02-25 | 千住金属工业株式会社 | 焊球组件及其生产方法,形成焊块的方法 |
US6841874B1 (en) * | 2002-11-01 | 2005-01-11 | Amkor Technology, Inc. | Wafer-level chip-scale package |
JP4341036B2 (ja) * | 2003-03-10 | 2009-10-07 | 日立金属株式会社 | 導電性ボールの搭載方法および搭載装置 |
JP2005026579A (ja) * | 2003-07-04 | 2005-01-27 | Fujitsu Ltd | ハンダバンプ付き電子部品の実装方法およびこれに用いるフラックスフィル |
JP2006210761A (ja) * | 2005-01-31 | 2006-08-10 | Fujitsu Ltd | はんだ接合方法及び装置 |
JP2006222381A (ja) * | 2005-02-14 | 2006-08-24 | Olympus Corp | 電子部品の実装方法及びその製造装置 |
SI1888294T1 (sl) * | 2005-05-26 | 2014-08-29 | Alfa Laval Corporate Ab | Postopek trdega spajkanja izdelkov in nerjavečega jekla |
US20070007323A1 (en) * | 2005-07-06 | 2007-01-11 | International Business Machines Corporation | Standoff structures for surface mount components |
JP2007180447A (ja) * | 2005-12-28 | 2007-07-12 | Toyota Industries Corp | 半田付け方法、半田付け装置、及び半導体装置の製造方法 |
JP5210496B2 (ja) * | 2006-03-27 | 2013-06-12 | 神港精機株式会社 | 半導体装置の製造方法 |
US8308830B2 (en) * | 2007-05-22 | 2012-11-13 | David Patrick Egan | Coated cBN |
JP5969018B2 (ja) * | 2011-06-15 | 2016-08-10 | プロメラス, エルエルシー | 熱活性化塩基発生剤を包含する熱分解性ポリマー組成物 |
JP5853525B2 (ja) | 2011-09-16 | 2016-02-09 | 富士電機株式会社 | 半導体チップの位置決め治具及び半導体装置の製造方法 |
TW201320207A (zh) * | 2011-11-15 | 2013-05-16 | Ableprint Technology Co Ltd | 抑制濺錫之迴焊方法 |
US9293636B2 (en) * | 2012-08-01 | 2016-03-22 | Flextronics Ap, Llc | Solar cell pad dressing |
WO2014099614A1 (en) * | 2012-12-17 | 2014-06-26 | Promerus, Llc | Thermally decomposable polymer composition for forming microelectric assemblies |
JP6031059B2 (ja) * | 2014-03-31 | 2016-11-24 | 信越化学工業株式会社 | 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法 |
JP6354842B2 (ja) * | 2014-05-13 | 2018-07-11 | 株式会社村田製作所 | 樹脂封止型モジュール |
JP6042956B1 (ja) * | 2015-09-30 | 2016-12-14 | オリジン電気株式会社 | 半田付け製品の製造方法 |
US10029328B2 (en) * | 2016-03-29 | 2018-07-24 | Ngk Insulators, Ltd. | Metal wiring bonding structure and production method therefor |
-
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- 2015-09-30 JP JP2015195198A patent/JP6042956B1/ja active Active
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- 2016-09-29 CN CN201680052916.9A patent/CN108141965B/zh active Active
- 2016-09-29 EP EP16851820.7A patent/EP3358918B1/en active Active
- 2016-09-29 US US15/764,268 patent/US10843300B2/en active Active
- 2016-09-29 WO PCT/JP2016/078959 patent/WO2017057649A1/ja active Application Filing
- 2016-09-30 TW TW105131585A patent/TWI653116B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004253769A (ja) | 2003-01-31 | 2004-09-09 | Hitachi Metals Ltd | 半田バンプの製造方法及び製造装置 |
EP2587900A1 (en) | 2010-06-28 | 2013-05-01 | Ayumi Industry Co., Ltd. | Joint structure manufacturing method, heating and melting treatment method, and system for same |
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