JP2016503961A - 仮貼り合わせ層の被着方法 - Google Patents

仮貼り合わせ層の被着方法 Download PDF

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Publication number
JP2016503961A
JP2016503961A JP2015548392A JP2015548392A JP2016503961A JP 2016503961 A JP2016503961 A JP 2016503961A JP 2015548392 A JP2015548392 A JP 2015548392A JP 2015548392 A JP2015548392 A JP 2015548392A JP 2016503961 A JP2016503961 A JP 2016503961A
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Japan
Prior art keywords
temporary bonding
bonding layer
wafer
temporary
layer
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JP2015548392A
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Japanese (ja)
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JP2016503961A5 (enExample
Inventor
ブルクグラーフ ユルゲン
ブルクグラーフ ユルゲン
Original Assignee
エーファウ・グループ・エー・タルナー・ゲーエムベーハー
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Publication of JP2016503961A publication Critical patent/JP2016503961A/ja
Publication of JP2016503961A5 publication Critical patent/JP2016503961A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Peptides Or Proteins (AREA)
JP2015548392A 2012-12-21 2013-12-16 仮貼り合わせ層の被着方法 Pending JP2016503961A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012112989.4A DE102012112989A1 (de) 2012-12-21 2012-12-21 Verfahren zum Aufbringen einer Temporärbondschicht
DE102012112989.4 2012-12-21
PCT/EP2013/076629 WO2014095668A1 (de) 2012-12-21 2013-12-16 Verfahren zum aufbringen einer temporärbondschicht

Publications (2)

Publication Number Publication Date
JP2016503961A true JP2016503961A (ja) 2016-02-08
JP2016503961A5 JP2016503961A5 (enExample) 2017-01-19

Family

ID=49883069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015548392A Pending JP2016503961A (ja) 2012-12-21 2013-12-16 仮貼り合わせ層の被着方法

Country Status (8)

Country Link
US (1) US20150047784A1 (enExample)
JP (1) JP2016503961A (enExample)
KR (1) KR20150097381A (enExample)
CN (1) CN104380457A (enExample)
AT (1) AT516064B1 (enExample)
DE (1) DE102012112989A1 (enExample)
SG (1) SG2014013056A (enExample)
WO (1) WO2014095668A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
JP2017163009A (ja) * 2016-03-10 2017-09-14 東芝メモリ株式会社 半導体装置の製造方法
US10676350B2 (en) 2018-09-21 2020-06-09 ColdQuanta, Inc. Reversible anodic bonding
US12582001B2 (en) * 2022-08-19 2026-03-17 Micron Technology, Inc. Methods for fusion bonding semiconductor devices to temporary carrier wafers with cavity regions for reduced bond strength, and semiconductor device assemblies formed by the same
DE102023000322A1 (de) 2022-10-05 2024-04-11 Luce Patent Gmbh Verfahren zur stofflichen und energetischen Verwertung der festen Rückstände der Methanfermentation von Pflanzenteilen

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263291A (ja) * 1994-01-26 1995-10-13 Commiss Energ Atom 薄膜で構成された集積部品のための基板とその製造法
JP2005142504A (ja) * 2003-11-10 2005-06-02 Sony Corp 半導体装置、半導体基板およびそれらの製造方法
JP2007322575A (ja) * 2006-05-31 2007-12-13 Hitachi Displays Ltd 表示装置
JP2009516863A (ja) * 2005-11-22 2009-04-23 コミサリヤ・ア・レネルジ・アトミク 複数の薄膜部品を含むスクリーン形の可撓性電子デバイスを製造する方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257580B2 (ja) * 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JPH09260342A (ja) * 1996-03-18 1997-10-03 Mitsubishi Electric Corp 半導体装置の製造方法及び製造装置
JP4439602B2 (ja) * 1997-09-29 2010-03-24 株式会社東芝 半導体装置の製造方法
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US6853129B1 (en) * 2000-07-28 2005-02-08 Candescent Technologies Corporation Protected substrate structure for a field emission display device
DE10060433B4 (de) * 2000-12-05 2006-05-11 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Verfahren zur Herstellung eines Fluidbauelements, Fluidbauelement und Analysevorrichtung
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
US7087134B2 (en) * 2004-03-31 2006-08-08 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
EP1605502A1 (en) * 2004-06-08 2005-12-14 Interuniversitair Microelektronica Centrum Vzw Transfer method for the manufacturing of electronic devices
US9299594B2 (en) * 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263291A (ja) * 1994-01-26 1995-10-13 Commiss Energ Atom 薄膜で構成された集積部品のための基板とその製造法
JP2005142504A (ja) * 2003-11-10 2005-06-02 Sony Corp 半導体装置、半導体基板およびそれらの製造方法
JP2009516863A (ja) * 2005-11-22 2009-04-23 コミサリヤ・ア・レネルジ・アトミク 複数の薄膜部品を含むスクリーン形の可撓性電子デバイスを製造する方法
JP2007322575A (ja) * 2006-05-31 2007-12-13 Hitachi Displays Ltd 表示装置

Also Published As

Publication number Publication date
SG2014013056A (en) 2014-10-30
CN104380457A (zh) 2015-02-25
DE102012112989A1 (de) 2014-06-26
WO2014095668A1 (de) 2014-06-26
AT516064A5 (de) 2016-02-15
US20150047784A1 (en) 2015-02-19
KR20150097381A (ko) 2015-08-26
AT516064B1 (de) 2016-02-15

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