AT516064B1 - Verfahren zum Aufbringen einer Temporärbondschicht - Google Patents

Verfahren zum Aufbringen einer Temporärbondschicht Download PDF

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Publication number
AT516064B1
AT516064B1 ATA9019/2013A AT90192013A AT516064B1 AT 516064 B1 AT516064 B1 AT 516064B1 AT 90192013 A AT90192013 A AT 90192013A AT 516064 B1 AT516064 B1 AT 516064B1
Authority
AT
Austria
Prior art keywords
temporary
bonding
boundary layer
temporärbondschicht
wafer
Prior art date
Application number
ATA9019/2013A
Other languages
German (de)
English (en)
Other versions
AT516064A5 (de
Inventor
Jürgen Burggraf
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Application granted granted Critical
Publication of AT516064B1 publication Critical patent/AT516064B1/de
Publication of AT516064A5 publication Critical patent/AT516064A5/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H10P72/10—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H10P72/70—
    • H10P72/74—
    • H10P72/7412—
    • H10P72/7416—
    • H10P72/7422—
    • H10P72/744—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Peptides Or Proteins (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
ATA9019/2013A 2012-12-21 2013-12-16 Verfahren zum Aufbringen einer Temporärbondschicht AT516064B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012112989.4A DE102012112989A1 (de) 2012-12-21 2012-12-21 Verfahren zum Aufbringen einer Temporärbondschicht
PCT/EP2013/076629 WO2014095668A1 (de) 2012-12-21 2013-12-16 Verfahren zum aufbringen einer temporärbondschicht

Publications (2)

Publication Number Publication Date
AT516064B1 true AT516064B1 (de) 2016-02-15
AT516064A5 AT516064A5 (de) 2016-02-15

Family

ID=49883069

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA9019/2013A AT516064B1 (de) 2012-12-21 2013-12-16 Verfahren zum Aufbringen einer Temporärbondschicht

Country Status (8)

Country Link
US (1) US20150047784A1 (enExample)
JP (1) JP2016503961A (enExample)
KR (1) KR20150097381A (enExample)
CN (1) CN104380457A (enExample)
AT (1) AT516064B1 (enExample)
DE (1) DE102012112989A1 (enExample)
SG (1) SG2014013056A (enExample)
WO (1) WO2014095668A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
JP2017163009A (ja) * 2016-03-10 2017-09-14 東芝メモリ株式会社 半導体装置の製造方法
US10676350B2 (en) 2018-09-21 2020-06-09 ColdQuanta, Inc. Reversible anodic bonding
US20240063207A1 (en) * 2022-08-19 2024-02-22 Micron Technology, Inc. Methods for fusion bonding semiconductor devices to temporary carrier wafers with cavity regions for reduced bond strength, and semiconductor device assemblies formed by the same
DE102023000322A1 (de) 2022-10-05 2024-04-11 Luce Patent Gmbh Verfahren zur stofflichen und energetischen Verwertung der festen Rückstände der Methanfermentation von Pflanzenteilen

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661333A (en) * 1994-01-26 1997-08-26 Commissariat A L'energie Atomique Substrate for integrated components comprising a thin film and an intermediate film
DE19654791A1 (de) * 1996-03-18 1997-09-25 Mitsubishi Electric Corp Verfahren zur Herstellung einer Halbleitervorrichtung
US5856229A (en) * 1994-03-10 1999-01-05 Canon Kabushiki Kaisha Process for production of semiconductor substrate
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US20080309867A1 (en) * 2005-11-22 2008-12-18 Vida Kampstra Process for fabricating a flexible electronic device of the screen type, including a plurality of thin-film components

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439602B2 (ja) * 1997-09-29 2010-03-24 株式会社東芝 半導体装置の製造方法
US6853129B1 (en) * 2000-07-28 2005-02-08 Candescent Technologies Corporation Protected substrate structure for a field emission display device
DE10060433B4 (de) * 2000-12-05 2006-05-11 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Verfahren zur Herstellung eines Fluidbauelements, Fluidbauelement und Analysevorrichtung
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP4457642B2 (ja) * 2003-11-10 2010-04-28 ソニー株式会社 半導体装置、およびその製造方法
US7087134B2 (en) * 2004-03-31 2006-08-08 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
EP1605502A1 (en) * 2004-06-08 2005-12-14 Interuniversitair Microelektronica Centrum Vzw Transfer method for the manufacturing of electronic devices
JP2007322575A (ja) * 2006-05-31 2007-12-13 Hitachi Displays Ltd 表示装置
US9299594B2 (en) * 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661333A (en) * 1994-01-26 1997-08-26 Commissariat A L'energie Atomique Substrate for integrated components comprising a thin film and an intermediate film
US5856229A (en) * 1994-03-10 1999-01-05 Canon Kabushiki Kaisha Process for production of semiconductor substrate
DE19654791A1 (de) * 1996-03-18 1997-09-25 Mitsubishi Electric Corp Verfahren zur Herstellung einer Halbleitervorrichtung
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US20080309867A1 (en) * 2005-11-22 2008-12-18 Vida Kampstra Process for fabricating a flexible electronic device of the screen type, including a plurality of thin-film components

Also Published As

Publication number Publication date
SG2014013056A (en) 2014-10-30
KR20150097381A (ko) 2015-08-26
US20150047784A1 (en) 2015-02-19
JP2016503961A (ja) 2016-02-08
AT516064A5 (de) 2016-02-15
WO2014095668A1 (de) 2014-06-26
DE102012112989A1 (de) 2014-06-26
CN104380457A (zh) 2015-02-25

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