AT516064A5 - Verfahren zum Aufbringen einer Temporärbondschicht - Google Patents

Verfahren zum Aufbringen einer Temporärbondschicht Download PDF

Info

Publication number
AT516064A5
AT516064A5 ATA9019/2013A AT90192013A AT516064A5 AT 516064 A5 AT516064 A5 AT 516064A5 AT 90192013 A AT90192013 A AT 90192013A AT 516064 A5 AT516064 A5 AT 516064A5
Authority
AT
Austria
Prior art keywords
applying
boundary layer
temporary
bonding
temporärbondschicht
Prior art date
Application number
ATA9019/2013A
Other languages
English (en)
Other versions
AT516064B1 (de
Inventor
Jürgen Burggraf
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Application granted granted Critical
Publication of AT516064B1 publication Critical patent/AT516064B1/de
Publication of AT516064A5 publication Critical patent/AT516064A5/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Peptides Or Proteins (AREA)
  • Weting (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zum Aufbringen einer Temporärbondschicht (2, 2', 2") auf einen Trägerwafer (1) zum temporären Verbinden mit einem Produktwafer (4) durch Fusionsbonden oder anodisches Bonden mit folgenden Schritten, insbesondere folgendem Ablauf: - Aufbringen der zum Fusionsbonden oder anodischen Bonden geeigneten Temporärbondschicht (2, 2', 2") auf den Trägerwafer (1) und - Modifikation der Temporärbondschicht (2, 2', 2") während und/oder nach dem Aufbringen derart, dass die temporäre Verbindung der Temporärbondschicht (2, 2', 2") lösbar ist.
ATA9019/2013A 2012-12-21 2013-12-16 Verfahren zum Aufbringen einer Temporärbondschicht AT516064B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012112989.4A DE102012112989A1 (de) 2012-12-21 2012-12-21 Verfahren zum Aufbringen einer Temporärbondschicht
PCT/EP2013/076629 WO2014095668A1 (de) 2012-12-21 2013-12-16 Verfahren zum aufbringen einer temporärbondschicht

Publications (2)

Publication Number Publication Date
AT516064B1 AT516064B1 (de) 2016-02-15
AT516064A5 true AT516064A5 (de) 2016-02-15

Family

ID=49883069

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA9019/2013A AT516064B1 (de) 2012-12-21 2013-12-16 Verfahren zum Aufbringen einer Temporärbondschicht

Country Status (8)

Country Link
US (1) US20150047784A1 (de)
JP (1) JP2016503961A (de)
KR (1) KR20150097381A (de)
CN (1) CN104380457A (de)
AT (1) AT516064B1 (de)
DE (1) DE102012112989A1 (de)
SG (1) SG2014013056A (de)
WO (1) WO2014095668A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
JP2017163009A (ja) * 2016-03-10 2017-09-14 東芝メモリ株式会社 半導体装置の製造方法
US10676350B2 (en) 2018-09-21 2020-06-09 ColdQuanta, Inc. Reversible anodic bonding
DE102023000322A1 (de) 2022-10-05 2024-04-11 Luce Patent Gmbh Verfahren zur stofflichen und energetischen Verwertung der festen Rückstände der Methanfermentation von Pflanzenteilen

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661333A (en) * 1994-01-26 1997-08-26 Commissariat A L'energie Atomique Substrate for integrated components comprising a thin film and an intermediate film
DE19654791A1 (de) * 1996-03-18 1997-09-25 Mitsubishi Electric Corp Verfahren zur Herstellung einer Halbleitervorrichtung
US5856229A (en) * 1994-03-10 1999-01-05 Canon Kabushiki Kaisha Process for production of semiconductor substrate
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US20080309867A1 (en) * 2005-11-22 2008-12-18 Vida Kampstra Process for fabricating a flexible electronic device of the screen type, including a plurality of thin-film components

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439602B2 (ja) * 1997-09-29 2010-03-24 株式会社東芝 半導体装置の製造方法
US6853129B1 (en) * 2000-07-28 2005-02-08 Candescent Technologies Corporation Protected substrate structure for a field emission display device
DE10060433B4 (de) * 2000-12-05 2006-05-11 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Verfahren zur Herstellung eines Fluidbauelements, Fluidbauelement und Analysevorrichtung
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP4457642B2 (ja) * 2003-11-10 2010-04-28 ソニー株式会社 半導体装置、およびその製造方法
US7087134B2 (en) * 2004-03-31 2006-08-08 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
EP1605502A1 (de) * 2004-06-08 2005-12-14 Interuniversitair Microelektronica Centrum Vzw Transfermethode zur Herstellung von elektronischen Geräten
JP2007322575A (ja) * 2006-05-31 2007-12-13 Hitachi Displays Ltd 表示装置
US9299594B2 (en) * 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661333A (en) * 1994-01-26 1997-08-26 Commissariat A L'energie Atomique Substrate for integrated components comprising a thin film and an intermediate film
US5856229A (en) * 1994-03-10 1999-01-05 Canon Kabushiki Kaisha Process for production of semiconductor substrate
DE19654791A1 (de) * 1996-03-18 1997-09-25 Mitsubishi Electric Corp Verfahren zur Herstellung einer Halbleitervorrichtung
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US20080309867A1 (en) * 2005-11-22 2008-12-18 Vida Kampstra Process for fabricating a flexible electronic device of the screen type, including a plurality of thin-film components

Also Published As

Publication number Publication date
SG2014013056A (en) 2014-10-30
KR20150097381A (ko) 2015-08-26
DE102012112989A1 (de) 2014-06-26
AT516064B1 (de) 2016-02-15
US20150047784A1 (en) 2015-02-19
JP2016503961A (ja) 2016-02-08
WO2014095668A1 (de) 2014-06-26
CN104380457A (zh) 2015-02-25

Similar Documents

Publication Publication Date Title
PH12018500244A1 (en) Clean-in-place method and system and composition for the same
AT516064A5 (de) Verfahren zum Aufbringen einer Temporärbondschicht
EP2489432A3 (de) Flüssiger Kationenaustauscher
DE102016113315B8 (de) Verfahren zum kontinuierlichen Herstellen von plattenförmigen Verbundwerkstücken
AT517748A5 (de) Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat
AT510881A3 (de) Dreidimensionale modelliervorrichtung, dreidimensionales modellierverfahren sowie modell, das mit dem verfahren ausgebildet wird
SG11201706483VA (en) Method of applying a sulphur-containing sealing compound, apparatus therefor, correspondingly treated aerospace vehicle and use thereof
AT516292A3 (de) Verfahren zum Beschichten eines Substrats mit einem Lack sowie Vorrichtung zum Planarisieren einer Lackschicht
AT517050A3 (de) Heizkanaleinheit, Verfahren zum Herstellen einer Heizkanaleinheit und Umbuganlage
DE112016000195A5 (de) Verfahren zum Trennen von Glas mittels eines Lasers, sowie verfahrensgemäß hergestelltes Glaserzeugnis
PH12017501068A1 (en) Intumescent mesh coating
AT518738A5 (de) Verfahren zum Bonden von Substraten
DE102017106999A8 (de) Verfahren zur Herstellung eines durch U-O-Formen hergestellten Blechumformbauteils sowie Blechumformbauteil
EP2503031A3 (de) Verfahren zum Beschichten, Polrohr und Vorrichtung zum Durchführen des Verfahrens
DE112019000853A5 (de) Verfahren zum autonomen betreiben eines nachfolgenden fahrzeugs in einem fahrzeugverbund
EP2518381A3 (de) Flexibler Schlauch und Verfahren zur Herstellung eines flexiblen Schlauches
AT517646A5 (de) Substratverbund, Verfahren und Vorrichtung zum Bonden von Substraten
AT514279A5 (de) Verfahren zur Herstellung einer polychromatisierenden Schicht und Substrat sowie Leuchtdiode mit polychromatisierender Schicht
AT526564A5 (de) Verfahren und Vorrichtung zum Prägen von Substraten
EP3680301A3 (de) Verfahren zum herstellen eines klebstofffilaments und klebstofffilament
SG11202003064UA (en) A method of recovering olefins in a solution polymerisation process
AT518702A5 (de) Verfahren zum Aufbringen einer Bondschicht
AT515767A3 (de) Materialprüfungsverfahren, Verwendung einer Ziehsteinanordnung und Ziehsteinanordnung
DE112020005724A5 (de) Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
CH710963A8 (de) Verfahren zum Beschichten eines Substrats.