AT518738A5 - Verfahren zum Bonden von Substraten - Google Patents
Verfahren zum Bonden von SubstratenInfo
- Publication number
- AT518738A5 AT518738A5 ATA9333/2014A AT93332014A AT518738A5 AT 518738 A5 AT518738 A5 AT 518738A5 AT 93332014 A AT93332014 A AT 93332014A AT 518738 A5 AT518738 A5 AT 518738A5
- Authority
- AT
- Austria
- Prior art keywords
- bonding substrates
- substrate
- bonding
- substrates
- relates
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
Classifications
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/0046—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by constructional aspects of the apparatus
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Recrystallisation Techniques (AREA)
- Combinations Of Printed Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Die vorliegende Erfindung betrifft ein Verfahren zum Bonden eines ersten Substrats (4) mit einem zweiten Substrat (4'), dadurch gekennzeichnet, dass das erste Substrat ( 4) und/oder das zweite Substrat (4') vor dem Bonden gedünnt ist/wird.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2014/078585 WO2016096025A1 (de) | 2014-12-18 | 2014-12-18 | Verfahren zum bonden von gedünnten substraten |
Publications (2)
Publication Number | Publication Date |
---|---|
AT518738A5 true AT518738A5 (de) | 2017-12-15 |
AT518738B1 AT518738B1 (de) | 2023-06-15 |
Family
ID=52282714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ATA9333/2014A AT518738B1 (de) | 2014-12-18 | 2014-12-18 | Verfahren zum Bonden von Substraten |
Country Status (9)
Country | Link |
---|---|
US (2) | US9859246B2 (de) |
JP (1) | JP6509208B2 (de) |
KR (1) | KR102115067B1 (de) |
CN (1) | CN105960706B (de) |
AT (1) | AT518738B1 (de) |
DE (1) | DE112014003660B4 (de) |
SG (1) | SG11201603148VA (de) |
TW (2) | TWI720613B (de) |
WO (1) | WO2016096025A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201603148VA (en) * | 2014-12-18 | 2016-07-28 | Ev Group E Thallner Gmbh | Method for bonding substrates |
WO2018059699A1 (de) * | 2016-09-29 | 2018-04-05 | Ev Group E. Thallner Gmbh | Vorrichtung und verfahren zum bonden zweier substrate |
KR20200134708A (ko) | 2019-05-23 | 2020-12-02 | 삼성전자주식회사 | 웨이퍼 본딩 장치 |
JP7339905B2 (ja) * | 2020-03-13 | 2023-09-06 | キオクシア株式会社 | 貼合装置および貼合方法 |
KR102415588B1 (ko) * | 2021-02-25 | 2022-06-30 | 아주대학교산학협력단 | 판 부재 정렬 장치 및 이를 구비하는 판 부재 적층 시스템 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007047536A2 (en) * | 2005-10-14 | 2007-04-26 | Silicon Genesis Corporation | Method and apparatus for flag-less wafer bonding tool |
EP2458628A1 (de) * | 2009-07-21 | 2012-05-30 | Nikon Corporation | Substrathaltersystem, substratverbindungsvorrichtung und verfahren zur herstellung dieser vorrichtung |
US20130037942A1 (en) * | 2011-08-08 | 2013-02-14 | SK Hynix Inc. | Semiconductor chips having a dual-layered structure, packages having the same, and methods of fabricating the semiconductor chips and the packages |
US20130252375A1 (en) * | 2012-03-26 | 2013-09-26 | Ge Yi | Magnet Assisted Alignment Method for Wafer Bonding and Wafer Level Chip Scale Packaging |
US20130328174A1 (en) * | 2012-06-06 | 2013-12-12 | International Business Machines Corporation | Edge Protection of Bonded Wafers During Wafer Thinning |
WO2014099406A1 (en) * | 2012-12-21 | 2014-06-26 | Io Semiconductor, Inc. | Back-to-back stacked integrated circuit assembly and method of making |
WO2014154272A1 (de) * | 2013-03-27 | 2014-10-02 | Ev Group E. Thallner Gmbh | Aufnahmeeinrichtung, vorrichtung und verfahren zur handhabung von substratstapeln |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5843832A (en) * | 1995-03-01 | 1998-12-01 | Virginia Semiconductor, Inc. | Method of formation of thin bonded ultra-thin wafers |
US6399143B1 (en) * | 1996-04-09 | 2002-06-04 | Delsys Pharmaceutical Corporation | Method for clamping and electrostatically coating a substrate |
AT405775B (de) | 1998-01-13 | 1999-11-25 | Thallner Erich | Verfahren und vorrichtung zum ausgerichteten zusammenführen von scheibenförmigen halbleitersubstraten |
US7160105B2 (en) * | 2001-06-01 | 2007-01-09 | Litrex Corporation | Temperature controlled vacuum chuck |
JP2005093528A (ja) * | 2003-09-12 | 2005-04-07 | Canon Inc | 近接場露光用マスクの支持固定構造、該支持固定構造を有する近接場露光装置 |
US7611671B2 (en) | 2005-10-14 | 2009-11-03 | Aperon Biosystems Corp. | Reduction of carbon monoxide interference in gaseous analyte detectors |
KR100832696B1 (ko) * | 2008-01-18 | 2008-05-28 | 임권현 | 진공척 |
JP5370903B2 (ja) * | 2008-02-18 | 2013-12-18 | 株式会社ニコン | 基板貼り合わせ方法 |
EP2667407B1 (de) * | 2009-09-01 | 2019-01-23 | EV Group GmbH | Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat mittels eines Lösungsmittels und Schallwellen durch Verformung eines auf einem Filmrahmen montierten flexiblen Films |
EP3731258A1 (de) * | 2009-09-22 | 2020-10-28 | EV Group E. Thallner GmbH | Vorrichtung zum ausrichten zweier substrate |
EP2325121B1 (de) * | 2009-11-18 | 2013-06-05 | EV Group E. Thallner GmbH | Transportsystem zur Aufnahme und zum Transport von flexiblen Substraten |
US9064686B2 (en) * | 2010-04-15 | 2015-06-23 | Suss Microtec Lithography, Gmbh | Method and apparatus for temporary bonding of ultra thin wafers |
EP2523209B1 (de) * | 2010-04-23 | 2017-03-08 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat |
KR20130140750A (ko) * | 2010-12-14 | 2013-12-24 | 에베 그룹 에. 탈너 게엠베하 | 웨이퍼를 고정 및 장착하기 위한 홀딩 장치 |
US8946058B2 (en) * | 2011-03-14 | 2015-02-03 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
KR101952471B1 (ko) * | 2011-04-26 | 2019-02-26 | 가부시키가이샤 니콘 | 기판 접합 장치, 기판 유지 장치, 기판 접합 방법, 기반 유지 방법, 적층 반도체 장치 및 중첩 기판 |
JP5754261B2 (ja) * | 2011-06-23 | 2015-07-29 | 株式会社ニコン | 基板貼り合わせ装置、基板貼り合わせ方法および積層半導体装置の製造方法 |
KR102350216B1 (ko) | 2011-08-12 | 2022-01-11 | 에베 그룹 에. 탈너 게엠베하 | 기판의 접합을 위한 장치 및 방법 |
JP5485958B2 (ja) * | 2011-09-16 | 2014-05-07 | 東京エレクトロン株式会社 | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム |
SG2014014070A (en) | 2012-06-06 | 2014-06-27 | Ev Group E Thallner Gmbh | Device and method for determination of alignment errors |
EP2940526B1 (de) | 2012-09-06 | 2021-07-14 | EV Group E. Thallner GmbH | Verfahren zum prägen |
WO2014202106A1 (de) | 2013-06-17 | 2014-12-24 | Ev Group E. Thallner Gmbh | Vorrichtung und verfahren zum ausrichten von substraten |
KR20150080449A (ko) | 2013-12-06 | 2015-07-09 | 에베 그룹 에. 탈너 게엠베하 | 기질들을 정렬하기 위한 장치 및 방법 |
KR101640743B1 (ko) * | 2014-10-14 | 2016-07-19 | 안성룡 | 자유변형 흡착척 |
SG11201603148VA (en) * | 2014-12-18 | 2016-07-28 | Ev Group E Thallner Gmbh | Method for bonding substrates |
-
2014
- 2014-11-18 SG SG11201603148VA patent/SG11201603148VA/en unknown
- 2014-12-18 CN CN201480057663.5A patent/CN105960706B/zh active Active
- 2014-12-18 US US14/917,318 patent/US9859246B2/en active Active
- 2014-12-18 KR KR1020167008434A patent/KR102115067B1/ko active IP Right Grant
- 2014-12-18 AT ATA9333/2014A patent/AT518738B1/de active
- 2014-12-18 JP JP2016525094A patent/JP6509208B2/ja active Active
- 2014-12-18 WO PCT/EP2014/078585 patent/WO2016096025A1/de active Application Filing
- 2014-12-18 DE DE112014003660.9T patent/DE112014003660B4/de active Active
-
2015
- 2015-11-12 TW TW108132829A patent/TWI720613B/zh active
- 2015-11-12 TW TW104137404A patent/TW201634289A/zh unknown
-
2017
- 2017-11-22 US US15/820,907 patent/US20180096962A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007047536A2 (en) * | 2005-10-14 | 2007-04-26 | Silicon Genesis Corporation | Method and apparatus for flag-less wafer bonding tool |
EP2458628A1 (de) * | 2009-07-21 | 2012-05-30 | Nikon Corporation | Substrathaltersystem, substratverbindungsvorrichtung und verfahren zur herstellung dieser vorrichtung |
US20130037942A1 (en) * | 2011-08-08 | 2013-02-14 | SK Hynix Inc. | Semiconductor chips having a dual-layered structure, packages having the same, and methods of fabricating the semiconductor chips and the packages |
US20130252375A1 (en) * | 2012-03-26 | 2013-09-26 | Ge Yi | Magnet Assisted Alignment Method for Wafer Bonding and Wafer Level Chip Scale Packaging |
US20130328174A1 (en) * | 2012-06-06 | 2013-12-12 | International Business Machines Corporation | Edge Protection of Bonded Wafers During Wafer Thinning |
WO2014099406A1 (en) * | 2012-12-21 | 2014-06-26 | Io Semiconductor, Inc. | Back-to-back stacked integrated circuit assembly and method of making |
WO2014154272A1 (de) * | 2013-03-27 | 2014-10-02 | Ev Group E. Thallner Gmbh | Aufnahmeeinrichtung, vorrichtung und verfahren zur handhabung von substratstapeln |
Also Published As
Publication number | Publication date |
---|---|
US20160358881A1 (en) | 2016-12-08 |
TW201634289A (zh) | 2016-10-01 |
KR20170096938A (ko) | 2017-08-25 |
JP6509208B2 (ja) | 2019-05-08 |
DE112014003660A5 (de) | 2016-09-29 |
CN105960706A (zh) | 2016-09-21 |
US9859246B2 (en) | 2018-01-02 |
AT518738B1 (de) | 2023-06-15 |
SG11201603148VA (en) | 2016-07-28 |
TWI720613B (zh) | 2021-03-01 |
TW202023835A (zh) | 2020-07-01 |
US20180096962A1 (en) | 2018-04-05 |
DE112014003660B4 (de) | 2019-06-13 |
KR102115067B1 (ko) | 2020-05-26 |
JP2018503239A (ja) | 2018-02-01 |
CN105960706B (zh) | 2021-07-23 |
WO2016096025A1 (de) | 2016-06-23 |
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