JP2016503961A5 - - Google Patents

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Publication number
JP2016503961A5
JP2016503961A5 JP2015548392A JP2015548392A JP2016503961A5 JP 2016503961 A5 JP2016503961 A5 JP 2016503961A5 JP 2015548392 A JP2015548392 A JP 2015548392A JP 2015548392 A JP2015548392 A JP 2015548392A JP 2016503961 A5 JP2016503961 A5 JP 2016503961A5
Authority
JP
Japan
Prior art keywords
temporary bonding
bonding layer
deforming
wafer
temporary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015548392A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016503961A (ja
Filing date
Publication date
Priority claimed from DE102012112989.4A external-priority patent/DE102012112989A1/de
Application filed filed Critical
Publication of JP2016503961A publication Critical patent/JP2016503961A/ja
Publication of JP2016503961A5 publication Critical patent/JP2016503961A5/ja
Pending legal-status Critical Current

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JP2015548392A 2012-12-21 2013-12-16 仮貼り合わせ層の被着方法 Pending JP2016503961A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012112989.4A DE102012112989A1 (de) 2012-12-21 2012-12-21 Verfahren zum Aufbringen einer Temporärbondschicht
DE102012112989.4 2012-12-21
PCT/EP2013/076629 WO2014095668A1 (de) 2012-12-21 2013-12-16 Verfahren zum aufbringen einer temporärbondschicht

Publications (2)

Publication Number Publication Date
JP2016503961A JP2016503961A (ja) 2016-02-08
JP2016503961A5 true JP2016503961A5 (enExample) 2017-01-19

Family

ID=49883069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015548392A Pending JP2016503961A (ja) 2012-12-21 2013-12-16 仮貼り合わせ層の被着方法

Country Status (8)

Country Link
US (1) US20150047784A1 (enExample)
JP (1) JP2016503961A (enExample)
KR (1) KR20150097381A (enExample)
CN (1) CN104380457A (enExample)
AT (1) AT516064B1 (enExample)
DE (1) DE102012112989A1 (enExample)
SG (1) SG2014013056A (enExample)
WO (1) WO2014095668A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
JP2017163009A (ja) * 2016-03-10 2017-09-14 東芝メモリ株式会社 半導体装置の製造方法
US10676350B2 (en) 2018-09-21 2020-06-09 ColdQuanta, Inc. Reversible anodic bonding
US20240063207A1 (en) * 2022-08-19 2024-02-22 Micron Technology, Inc. Methods for fusion bonding semiconductor devices to temporary carrier wafers with cavity regions for reduced bond strength, and semiconductor device assemblies formed by the same
DE102023000322A1 (de) 2022-10-05 2024-04-11 Luce Patent Gmbh Verfahren zur stofflichen und energetischen Verwertung der festen Rückstände der Methanfermentation von Pflanzenteilen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715503B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.
JP3257580B2 (ja) * 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JPH09260342A (ja) * 1996-03-18 1997-10-03 Mitsubishi Electric Corp 半導体装置の製造方法及び製造装置
JP4439602B2 (ja) * 1997-09-29 2010-03-24 株式会社東芝 半導体装置の製造方法
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US6853129B1 (en) * 2000-07-28 2005-02-08 Candescent Technologies Corporation Protected substrate structure for a field emission display device
DE10060433B4 (de) * 2000-12-05 2006-05-11 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Verfahren zur Herstellung eines Fluidbauelements, Fluidbauelement und Analysevorrichtung
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP4457642B2 (ja) * 2003-11-10 2010-04-28 ソニー株式会社 半導体装置、およびその製造方法
US7087134B2 (en) * 2004-03-31 2006-08-08 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
EP1605502A1 (en) * 2004-06-08 2005-12-14 Interuniversitair Microelektronica Centrum Vzw Transfer method for the manufacturing of electronic devices
FR2893750B1 (fr) * 2005-11-22 2008-03-14 Commissariat Energie Atomique Procede de fabrication d'un dispositif electronique flexible du type ecran comportant une pluralite de composants en couches minces.
JP2007322575A (ja) * 2006-05-31 2007-12-13 Hitachi Displays Ltd 表示装置
US9299594B2 (en) * 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same

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