JP2012169363A5 - - Google Patents
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- Publication number
- JP2012169363A5 JP2012169363A5 JP2011027612A JP2011027612A JP2012169363A5 JP 2012169363 A5 JP2012169363 A5 JP 2012169363A5 JP 2011027612 A JP2011027612 A JP 2011027612A JP 2011027612 A JP2011027612 A JP 2011027612A JP 2012169363 A5 JP2012169363 A5 JP 2012169363A5
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- JP
- Japan
- Prior art keywords
- substrate
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- 239000000758 substrate Substances 0.000 claims description 9
- 238000003672 processing method Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011027612A JP5946112B2 (ja) | 2011-02-10 | 2011-02-10 | 基板加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011027612A JP5946112B2 (ja) | 2011-02-10 | 2011-02-10 | 基板加工方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012169363A JP2012169363A (ja) | 2012-09-06 |
| JP2012169363A5 true JP2012169363A5 (enExample) | 2014-03-27 |
| JP5946112B2 JP5946112B2 (ja) | 2016-07-05 |
Family
ID=46973268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011027612A Active JP5946112B2 (ja) | 2011-02-10 | 2011-02-10 | 基板加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5946112B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6265522B2 (ja) * | 2013-02-28 | 2018-01-24 | 国立大学法人埼玉大学 | 表面3次元構造部材の製造方法 |
| KR101803790B1 (ko) | 2013-04-18 | 2017-12-04 | 한화테크윈 주식회사 | 웨이퍼의 시닝 방법 및 장치 |
| US10584428B2 (en) | 2014-08-08 | 2020-03-10 | Sumitomo Electric Industries, Ltd. | Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool |
| CN107112205B (zh) | 2015-01-16 | 2020-12-22 | 住友电气工业株式会社 | 半导体衬底及其制造方法,组合半导体衬底及其制造方法 |
| JP6552898B2 (ja) * | 2015-07-13 | 2019-07-31 | 株式会社ディスコ | 多結晶SiCウエーハの生成方法 |
| DE112018003116T5 (de) * | 2017-06-19 | 2020-03-05 | Rohm Co., Ltd. | Halbleiterbauelementherstellungsverfahren und struktur mit befestigtem wafer |
| JP7330695B2 (ja) * | 2018-12-21 | 2023-08-22 | 浜松ホトニクス株式会社 | レーザ加工方法、及び、半導体デバイス製造方法 |
| CN112635309B (zh) * | 2020-12-07 | 2024-07-12 | 福建晶安光电有限公司 | 衬底加工方法及利用该方法加工的衬底 |
| CN113193078B (zh) * | 2021-04-15 | 2023-04-25 | 山东交通学院 | 一种光伏电池片生产设备 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4128204B2 (ja) * | 2000-09-13 | 2008-07-30 | 浜松ホトニクス株式会社 | レーザ加工方法 |
| JP2007194533A (ja) * | 2006-01-23 | 2007-08-02 | Okamoto Machine Tool Works Ltd | 半導体基板の平坦化方法 |
| JP2010021398A (ja) * | 2008-07-11 | 2010-01-28 | Disco Abrasive Syst Ltd | ウェーハの処理方法 |
| JP2010155259A (ja) * | 2008-12-26 | 2010-07-15 | Seiko Epson Corp | 溝形成方法 |
| JP5398332B2 (ja) * | 2009-04-16 | 2014-01-29 | 信越ポリマー株式会社 | 半導体ウェーハの製造方法及びその装置 |
| WO2012108055A1 (ja) * | 2011-02-10 | 2012-08-16 | 信越ポリマー株式会社 | 単結晶基板製造方法および内部改質層形成単結晶部材 |
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2011
- 2011-02-10 JP JP2011027612A patent/JP5946112B2/ja active Active
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