JP2016225296A - 異方導電性フィルム及び接続構造体 - Google Patents
異方導電性フィルム及び接続構造体 Download PDFInfo
- Publication number
- JP2016225296A JP2016225296A JP2016106500A JP2016106500A JP2016225296A JP 2016225296 A JP2016225296 A JP 2016225296A JP 2016106500 A JP2016106500 A JP 2016106500A JP 2016106500 A JP2016106500 A JP 2016106500A JP 2016225296 A JP2016225296 A JP 2016225296A
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- axis
- conductive particles
- conductive
- particle
- anisotropic conductive
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Abstract
Description
導電粒子が略真球であり、
導電粒子の平均粒子径をDとした場合に、第1軸における導電粒子ピッチL1が1.5D以上、第1軸の軸ピッチL3が1.5D以上であり、
第1軸における任意の導電粒子P0と、該第1軸において導電粒子P0に隣接する導電粒子P1と、該第1軸に隣接する第1軸にあって導電粒子P0と最近接している導電粒子P2とで形成される3角形の各辺の方向が異方導電性フィルムのフィルム幅方向と斜交している異方導電性フィルムを提供する。
異方導電性フィルムは、上述のように長尺に形成するために繋ぎテープで繋いでも良く、また、巻き芯に巻かれた巻装体であってもよい。
本発明は、導電粒子Pが略真球であることを主要な特徴の一つとしている。ここで、略真球とは、次式で算出される真球度が70〜100であることをいう。
真球度={1−(So−Si)/So}×100
(式中、Soは導電粒子の平面画像における該導電粒子の外接円の面積、
Siは導電粒子の平面画像における該導電粒子の内接円の面積である)
例えば(メタ)アクリレート系樹脂で樹脂コアを形成する場合には、この(メタ)アクリル系樹脂は、(メタ)アクリル酸エステルと、さらに必要によりこれと共重合可能な反応性二重結合を有する化合物および二官能あるいは多官能性モノマーとの共重合体であることが好ましい。
K=(3/√2)F・S-8/2・R-1/2
(式中、F:導電粒子の20%圧縮変形時における荷重
S:圧縮変位(mm)
R:導電粒子の半径(mm) )
本発明において導電粒子Pの個数密度は、接続対象の端子幅や端子ピッチに応じて導電粒子Pの配列を変えることにより導通信頼性の確保上適切な範囲に調整することができる。通常、FOG接続においてもCOG接続においても、一組の対向する端子に3個以上、好ましくは10個以上の導電粒子が捕捉されれば良好な導通特性を得られる。
本発明では導電粒子Pの配列が、導電粒子Pが所定の導電粒子ピッチL1で配列した第1軸A1が所定の軸ピッチL3で並列した配列となっており、図1に示した異方導電性フィルム1では、第1軸A1の導電粒子ピッチL1、軸ピッチL3及び隣接する第1軸A1同士における最近接粒子間距離L2が、以下に説明するように導電粒子径Dに対して特定の大きさを有する格子状配列になっており、さらに、導電粒子Pの格子状配列を形成する主要な3方向の格子軸A1、A2、A3が異方導電性フィルムのフィルム幅方向と斜交している。
導電粒子Pの平均粒子径をDとした場合に、第1軸A1における導電粒子ピッチL1は、この異方導電性フィルム1を用いて第1電子部品の端子と第2電子部品の端子とを異方導電性接続したときの、同一部品内の並列する端子間の短絡防止と、第1、第2電子部品の対向する端子間の接合安定性の点から、導電粒子の中心間距離で1.5D以上とする。
第1軸A1の軸ピッチL3は、1本の第1軸A1内の導電粒子のばらつき幅0.5Dを考慮すると、2Dより大きいことがより好ましい。また、COG接続の場合、1個の端子が第1軸A1の配列線3本以上と交わることが導電粒子の捕捉数を安定させる上で望ましい。
導電粒子の配置は、導通が安定するのに十分な導電粒子数が少なくとも端子位置に存在するように設計する。具体的には、得られる異方性接続体として、端子の幅方向で導電粒子が1〜5列、好ましくは1〜3列の、端子長の方向に各列それぞれで数個から20個程度存在するように導電粒子の配置を設計することが好ましい。また、捕捉された導電粒子の列は、端子長の方向に対して平行にならないことが好ましい。捕捉された導電粒子の列が端子長の方向に対して平行ではないことにより、一つの電子部品の端子列においても、異なる電子部品の端子列においても、端子の長手方向に延びた端部において捕捉数が極端に偏ることがなくなるためである。捕捉された導電粒子の列と端子の長手方向に延びた端部が平行になると、捕捉される場合は列の全ての導電粒子が捕捉され、捕捉されない場合は列の全ての導電粒子が捕捉されなくなるという極端な現象が生じる恐れがある。即ち、異方性接続体を一定品質以上で生産する上では、上記のようにすることが好ましい。
また、ノーマルピッチであれば、第1軸A1がフィルム幅方向となす角θ1と、第1軸A1における導電粒子の粒子ピッチL1の設定により、一つの端子あたり1本の第1軸A1で十分な導電粒子の捕捉を得ることができるため、L1<L3が好ましい。これに対し、ファインピッチの場合は、端子の寸法(長さと幅の比率)や端子間距離、端子の高さや端子表面の平滑性の程度などに応じてL3を定める。
隣接する第1軸A1同士における最近接粒子間距離L2は、第1軸A1の軸ピッチL3以上になる。上述したように、粒子間距離を確保するためにL3を1.5D以上とすれば、L2も1.5D以上となり、ショートリスクを回避することができる。L2の最適な距離はL1とL3の関係から導かれる。
本実施例の異方導電性フィルム1では、第1軸A1における任意の導電粒子P0と、該第1軸A1において導電粒子P0に隣接する導電粒子P1と、該第1軸A1に隣接する第1軸にあって、導電粒子P0から最近接粒子間距離L2にある導電粒子P2とで形成される3角形の各辺の延長が格子軸となっており、これら格子軸について、導電粒子P0、P1を通る第1軸A1も、導電粒子P0、P2を通る第2軸A2も、導電粒子P1、P2を通る第3軸A3も、それぞれ異方導電性フィルム1のフィルム幅方向と斜交している。これにより、異方導電性接続時の異方導電性フィルム1と端子3とのアライメントにおいて、任意の方向にズレが生じても、端子3のエッジ上に導電粒子Pが一列に揃い、その導電粒子Pが端子3から一気に外れて接続に寄与しなくなるという問題を解消することができる。この効果は、異方導電性フィルムで接続する端子3がファインピッチの場合に大きい。
本発明の異方導電性フィルムは上述のように第1軸A1、第2軸A2及び第3軸A3がフィルム幅方向と斜交している限り、以下に示すように種々の配列をとることができる。なお、以下の例では、導電粒子Pの真球度は90%以上、平均粒子径Dは3μmである。
この異方導電性フィルム1Bは、COGの異方導電性接続に好ましく使用することができる。
この異方導電性フィルム1CはCOGの異方導電性接続に好ましく使用することができる。
この異方導電性フィルム1DはCOGの異方導電性接続に好ましく使用することができる。
この異方導電性フィルム1Eは、FOGの異方導電性接続に好ましく使用することができる。
この異方導電性フィルム1Fは、FOGの異方導電性接続に好ましく使用することができる。
この異方導電性フィルム1Gは、FOGの異方導電性接続に好ましく使用することができる。
絶縁接着剤層2に導電粒子Pを上述の格子状配列に配置して固定する方法としては、導電粒子Pの配列に対応した凹みを有する型を機械加工やレーザー加工、フォトリソグラフィなど公知の方法で作製し、その型に導電粒子を入れ、その上に絶縁接着剤層形成用組成物を充填し、型から取り出すことにより絶縁接着剤層に導電粒子を転写すればよい。このような型から、更に剛性の低い材質で型を作成しても良い。
層構成は種々の形態をとることができる。例えば、導電粒子を単層の絶縁接着剤層上に配置し、その導電粒子を絶縁接着剤層内に押し込むことにより、導電粒子を絶縁接着剤層の界面から一定の深さで存在させてもよい。
絶縁接着剤層2としては、公知の異方導電性フィルムで使用される絶縁性樹脂層を適宜採用することができる。例えば、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合型樹脂層、アクリレート化合物と熱ラジカル重合開始剤とを含む熱ラジカル重合型樹脂層、エポキシ化合物と熱カチオン重合開始剤とを含む熱カチオン重合型樹脂層、エポキシ化合物と熱アニオン重合開始剤とを含む熱アニオン重合型樹脂層等を使用することができる。これらの樹脂層は、必要に応じて絶縁接着剤層2に導電粒子Pを固定するため、それぞれ重合したものとすることができる。層構成で説明したように、絶縁接着剤層10を、複数の樹脂層から形成してもよい。
本発明の異方導電性フィルムは、FPC、ICチップ、ICモジュールなどの第1電子部品と、FPC、リジッド基板、セラミック基板、ガラス基板などの第2電子部品とを熱又は光により異方導電性接続する際に好ましく適用することができる。また、ICチップやICモジュールをスタックして第1電子部品同士を異方導電性接続することもできる。尚、本発明の異方導電性フィルムで接続する電子部品はこれらに限定されるものではない。このようにして得られる接続構造体も本発明の一部である。
実施例1、比較例1
1.異方導電性フィルムの製造
導電粒子の真球度が異方導電性フィルムの導通特性に及ぼす影響を調べるため、表1に示す組成の絶縁接着剤層に同表に示す導電粒子を図4に示した配列に配置したCOG用異方導電性フィルムを製造した。
(樹脂コアの作製)
ジビニルベンゼン、スチレン、ブチルメタクリレートの混合比を調整した水分散液に、重合開始剤としてベンゾイルパーオキサイドを投入して高速で均一攪拌しながら加熱を行い、重合反応を行うことにより微粒子分散液を得た。前記微粒子分散液をろ過し減圧乾燥することにより微粒子の凝集体であるブロック体を得た。更に、前記ブロック体を粉砕・分級することにより、樹脂コアとして平均粒子径3μmのジビニルベンゼン系樹脂粒子を得た。粒子の硬さはジビニルベンゼン、スチレン、ブチルメタクリレートの混合比を調整して行った。
得られたジビニルベンゼン系樹脂粒子(5g)に、パラジウム触媒を浸漬法により坦持させた。次いで、この樹脂粒子に対し、硫酸ニッケル六水和物、次亜リン酸ナトリウム、クエン酸ナトリウム、トリエタノールアミン及び硝酸タリウムから調製された無電解ニッケルメッキ液(pH12、メッキ液温50℃)を用いて無電解ニッケルメッキを行い、表面金属層としてニッケルメッキ層を有するニッケル被覆樹脂粒子を作製した。
実施例1及び比較例1で製造した異方導電性フィルムを用いてCOG接続した場合の(a)初期導通抵抗、(b)圧痕、(c)導電粒子捕捉性を以下のように評価した。結果を表1に示す。
COG接続する電子部品として次の評価用ICとガラス基板を使用した。
評価用IC
IC外形:1.8mm×20mm×0.2mm
金バンプ:15μm(高)×15μm(幅)×100μm(長)
(バンプ間ギャップ(スペース)15μm)
ガラス基板
ガラス材質 コーニング社製
外形 30×50mm
厚み 0.5mm
端子 ITO配線
(a)で得た評価用接続物をガラス基板側から金属顕微鏡で観察し、端子に捕捉された導電粒子200個について潰れ、又は破砕の状態を調べ、潰れ率120%以上(導電粒子の面積が接続前の120%以上になったもの)になっている導電粒子個数の導電粒子の全個数に対する割合を算出した。その結果、実施例1では90%以上であった。尚、比較例1の潰れ率は円柱の平均短軸長を平均粒子径として求めたが、分級したものではあっても破砕物であるために状態が確認しにくかったが、40%未満と推定される。
評価用ICとして、(a)で使用したバンプ幅15μm、バンプ間ギャップ15μm、バンプ長100μmのICを用意し、フリップチップボンダーFC1000(東レエンジニアリング(株))を用いて、バンプ幅15μmが接続される領域になるようにアライメントしながらICを搭載し、評価用接続物を得た(有効バンプ幅15μm)。同様に、バンプ幅5μmが接続される領域になるように意図的にアライメントをずらしてICを搭載し(有効バンプ幅5μm)、評価用接続物を得た。それぞれにおける導電粒子の捕捉数をガラス面からの圧痕の観察により調べ、次の基準で評価した。C以上であれば実用上問題はない。
A:10個以上
B:5個以上、10個未満
C:3個以上、5個未満
D:3個未満
導電粒子の配列が導通特性に及ぼす影響を調べるため、導電粒子の配列を表2に示すように変更する以外は実施例1と同様にして実施例2〜7及び比較例2〜5のCOG用の異方導電性フィルムを製造した。なお、各実施例及び比較例の導電粒子の配列パターンは図に示した通りである。
これらの結果を、実施例1及び比較例1の結果も合わせて表2に示す。
実施例1の2(a)と同様にして作製した評価用接続物を温度85℃、湿度85%RHの恒温槽に500時間おいた後の導通抵抗を2(a)と同様に測定した。この導通抵抗が5Ω以上であると、接続した電子部品の実用的な導通安定性の点から好ましくない。
ショート発生率の評価用ICとして次のIC(7.5μmスペースの櫛歯TEG(test element group))を用意した。
外形 1.5×13mm
厚み 0.5mm
バンプ仕様 金メッキ、高さ15μm、サイズ25×140μm、バンプ間距離7.5μm
導電粒子の配列が導通特性に及ぼす影響を調べるため、導電粒子の配列を表3に示すように変更する以外は実施例1と同様にして実施例8〜10のFOG用の異方導電性フィルムを製造した。
ここで、接続用評価物として有効実装面積率100%はフレキシブル配線板とガラス基板のアライメントにズレ幅が無いか又は2%以内のもの、80%はズレ幅が20%のものである。
S/R PI系、PI 38μmt-S’perflex基材
配線長さ 2mm (使用ツール1mm幅)
配線幅 200μm
端子1個の実装面積 0.2mm2
配線間隔 200μm
バンプ高さ 8μm(Cu 8μmt-Snメッキ)
外形 30×50mm
厚み 0.5mm
端子 ITO配線
これらの結果を表3に示す。
評価用フレキシブル配線板(FPC)
S/R PI系、PI 38μmt-S’perflex基材
配線長さ 2mm (使用ツール2mm幅)
配線幅 36μm
端子1個の実装面積 0.072mm2
配線間隔 200μm
バンプ高さ 8μm(Cu 8μmt-Snメッキ)
2 絶縁接着剤層
3 端子
A1 第1軸
A2 第2軸
A3 第3軸
D 導電粒子径
L1 導電粒子ピッチ
L2 隣接する第1軸同士における最近接粒子間距離
L3 軸ピッチ
Lp 端子ピッチ
Lq 端子幅
Lr 端子長
P 導電粒子
Claims (9)
- 絶縁接着剤層と、該絶縁接着剤層に配置された導電粒子を含む異方導電性フィルムであって、導電粒子が所定の粒子ピッチで配列した第1軸が所定の軸ピッチで並列している導電粒子の配列を有し、
導電粒子が略真球であり、
導電粒子の平均粒子径をDとした場合に、第1軸における導電粒子ピッチL1が1.5D以上、第1軸の軸ピッチL3が1.5D以上であり、
第1軸における任意の導電粒子P0と、該第1軸において導電粒子P0に隣接する導電粒子P1と、該第1軸に隣接する第1軸にあって導電粒子P0と最近接している導電粒子P2とで形成される3角形の各辺の方向が異方導電性フィルムのフィルム幅方向と斜交している異方導電性フィルム。 - 導電粒子の次式で算出される真球度が70〜100である請求項1記載の異方導電性フィルム。
真球度={1−(So−Si)/So}×100
(式中、Soは導電粒子の平面画像における該導電粒子の外接円の面積、
Siは導電粒子の平面画像における該導電粒子の内接円の面積である) - 異方導電性フィルムのフィルム幅に対するフィルム長さの比が5000以上である請求項1又は2記載の異方導電性フィルム。
- 前記3角形の各辺の方向に導電粒子が配列している請求項1〜3のいずれかに記載の異方導電性フィルム。
- 粒子ピッチが最も小さい配列軸を第1軸とする請求項1〜4のいずれかに記載の異方導電性フィルム。
- 3角形の各辺の方向に導電粒子が配列し、各辺の延長からなる格子軸を第1軸、第2軸、第3軸とした場合に、少なくとも一つの格子軸内の粒子ピッチが広狭のピッチが規則的に繰り返されたピッチからなる請求項1〜4のいずれかに記載の異方導電性フィルム。
- 3角形の各辺の方向に導電粒子が配列し、各辺の延長からなる格子軸を第1軸、第2軸、第3軸とした場合に、少なくとも一つの格子軸の軸ピッチが規則的に広狭を有する請求項1〜5のいずれかに記載の異方導電性フィルム。
- 3角形の各辺の方向に導電粒子が配列し、各辺の延長からなる格子軸を第1軸、第2軸、第3軸とした場合に、第1軸、第2軸又は第3軸と同一方向の格子軸として第4軸を有し、第4軸は、該第4軸と同一方向の第1軸、第2軸又は第3軸における導電粒子の配列から導電粒子を規則的に抜いた配列を有する請求項1〜7のいずれかに記載の異方導電性フィルム。
- 請求項1〜8のいずれかに記載の異方導電性フィルムで第1電子部品と第2電子部品が異方導電性接続されている接続構造体。
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