TW201717489A - 異向導電性膜及連接構造體 - Google Patents

異向導電性膜及連接構造體 Download PDF

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Publication number
TW201717489A
TW201717489A TW105116843A TW105116843A TW201717489A TW 201717489 A TW201717489 A TW 201717489A TW 105116843 A TW105116843 A TW 105116843A TW 105116843 A TW105116843 A TW 105116843A TW 201717489 A TW201717489 A TW 201717489A
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axis
conductive particles
conductive
film
particles
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TW105116843A
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English (en)
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TWI711222B (zh
Inventor
Seiichiro Shinohara
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Dexerials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
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    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
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    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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Abstract

本發明之異向導電性膜1包含絕緣接著劑層2、及配置於該絕緣接著劑層2之導電粒子P。導電粒子P具有導電粒子P以特定之粒子間距L1排列之第1軸A1以特定之軸間距L3並列的排列。導電粒子P為大致真球，於將導電粒子P之平均粒徑設為D的情況下，第1軸A1上之導電粒子間距L1為1.5D以上，第1軸之軸間距L3為1.5D以上。由第1軸A1上之任意之導電粒子P0、於該第1軸A1上鄰接於導電粒子P0之導電粒子P1、及位於鄰接於該第1軸A1之第1軸且與導電粒子P0最接近之導電粒子P2形成的3角形之各邊之方向(格子軸A1、A2、A3)與異向導電性膜之膜寬方向斜交。根據該異向導電性膜，可獲得穩定之連接可靠性，且可抑制製造成本隨著導電粒子之密度增加而上升。

Description

異向導電性膜及連接構造體
本發明係關於一種異向導電性膜及由異向導電性膜連接之連接構造體。
將IC晶片等電子零件構裝至基板時廣泛使用異向導電性膜。近年來，於行動電話、筆記型電腦等小型電子機器中，要求配線高密度化，且作為使異向導電性膜應對該高密度化之方法，已知將導電粒子呈格子狀地均等配置於異向導電性膜之絕緣接著劑層的技術。
然而，即便均等配置導電粒子亦存在連接電阻不均之問題。其原因在於，位於端子之邊緣上之導電粒子因絕緣性接著劑之熔融而流出至端子間之空間，難以被上下之端子夾住。針對該問題，提出將導電粒子之第1排列方向設為異向導電性膜之長度方向，且使與第1排列方向交叉之第2排列方向相對於與異向導電性膜之長度方向正交之方向傾斜5°以上且15°以下(專利文獻1)。
先前技術文獻
專利文獻
專利文獻1：日本專利4887700號公報
然而，若利用異向導電性膜連接之電子零件之端子尺寸進而變小，則端子所能捕獲之導電粒子之數量亦進而變少，存在利用專利文獻1所記載之異向導電性膜無法充分獲得導通可靠性之情況。尤其於將液晶畫面等之控制用IC連接於玻璃基板上之透明電極的所謂COG(Chip on Glass)連接中，端子尺寸因伴隨著液晶畫面之高精細化之多端子化及IC晶片之小型化而變小，又，於進行將電視之顯示器用玻璃基板與可撓性印刷配線板(FPC：Flexible Printed Circuits)連接之FOG(Film on Glass)連接的情況下，連接端子亦成為微間距，從而存在增加連接端子所能捕獲之導電粒子數而提高導通可靠性之課題。
為了使連接端子所能捕獲之導電粒子數增加，考慮進一步提高異向導電性膜中之導電粒子之密度。然而，若於異向導電性膜中提高導電粒子之密度，則產生異向導電性膜之製造成本提高之問題。
因此，本發明之課題在於即便於微間距之FOG連接或COG連接中，亦使用異向導電性膜獲得穩定之導通可靠性，且抑制製造成本隨著導電粒子之密度增加而上升。
本發明人發現，將導電粒子以特定之間距排列之軸以特定之軸間距並列的導電粒子排列設置於異向導電性膜時，若使鄰接之3個導電粒子所形成的3角形之各邊之方向斜交於異向導電性膜之膜寬方向，則即 便於進行異向導電性連接之對向之端子間之對準產生偏移而使有效構裝面積變窄，亦能使各端子充分捕獲導電粒子而提高導通可靠性，且若使用大致真球之粒子作為導電粒子，則容易製造導電粒子精確地配置成所期望之格子狀排列之異向導電性膜，又，藉由端子中之導電粒子之壓痕可準確地判斷異向導電性連接後之連接狀態之確認，藉由根據進行異向導電性連接之端子之寬窄而改變格子軸內之導電粒子之間距及格子軸之間距，可降低為了確保導通可靠性所需之導電粒子之密度，從而構想出本發明。
即，本發明提供一種異向導電性膜，其包含絕緣接著劑層、及配置於該絕緣接著劑層之導電粒子，且具有導電粒子以特定之粒子間距排列之第1軸以特定之軸間距並列之導電粒子排列，導電粒子為大致真球，於將導電粒子之平均粒徑設為D的情況下，第1軸上之導電粒子間距L1為1.5D以上，第1軸之軸間距L3為1.5D以上，由第1軸上之任意之導電粒子P0、於該第1軸上鄰接於導電粒子P0之導電粒子P1、位於鄰接於該第1軸之第1軸且與導電粒子P0最接近之導電粒子P2所形成的3角形之各邊之方向與異向導電性膜之膜寬方向斜交。
又，本發明提供一種利用上述異向導電性膜將第1電子零件與第2電子零件異向導電性連接之連接構造體。
根據本發明之異向導電性膜，於使導電粒子規則地排列於絕緣接著劑層時，鄰接之3個導電粒子所形成的3角形之各邊之方向與異向導電性膜之膜寬斜交，故而即便於進行異向導電性連接之對向之端子間對 準時產生偏移而使有效構裝面積變窄，亦能使各端子充分地捕獲導電粒子。又，即便於端子與異向導電性膜之貼合中向任一方向產生偏移，亦能使各端子充分地捕獲導電粒子。進而，於進行異向導電性連接之各個端子為矩形且該端子於固定方向以固定之間隔並列的情況下，存在於矩形內之導電粒子數之不均減少，故而能使端子對導電粒子之捕獲數穩定。
又，藉由調整第1軸之軸間距L3能使其對應於端子間距之寬窄，藉由調整第1軸之軸間距L3、及第1軸上之導電粒子間距L1，第1軸彼此間之最接近導電粒子間距離L2亦可確保所需之距離，因此能不過度提高導電粒子之個數密度而調整為確保導通可靠性所需之個數密度。
進而，藉由導電粒子為大致真球，能將導電粒子精確地配置成上述格子狀排列。又，若其粒徑大致統一，則能藉由端子中之導電粒子之壓痕或壓縮之狀態準確地判斷異向導電性連接後之連接狀態之確認，能防止對連接之IC晶片等局部地施加過度之按壓力。
因此，根據本發明之異向導電性膜，能提高使用異向導電性膜之連接構造體之導通可靠性，且能抑制異向導電性膜之製造成本隨著導電粒子之密度增加而上升。
1、1A、1B、1C、1D、1E、1F、1G‧‧‧異向導電性膜
2‧‧‧絕緣接著劑層
3‧‧‧端子
A1‧‧‧第1軸
A2‧‧‧第2軸
A3‧‧‧第3軸
D‧‧‧導電粒徑
L1‧‧‧導電粒子間距
L2‧‧‧鄰接之第1軸彼此之最接近粒子間距離
L3‧‧‧軸間距
Lp‧‧‧端子間距
Lq‧‧‧端子寬度
Lr‧‧‧端子長度
P‧‧‧導電粒子
圖1係實施例之異向導電性膜1中之導電粒子之配置圖。
圖2A係利用大致真球之導電粒子進行連接的情況下之連接狀態之說明圖。
圖2B係利用大致真球之導電粒子進行連接的情況下之連接狀態之說明 圖。
圖2C係利用柱狀之導電粒子進行連接的情況下之連接狀態之說明圖。
圖2D係利用粒徑不均之導電粒子進行連接的情況下之連接狀態之說明圖。
圖3A係異向導電性膜中之導電粒子之配置圖之變形例。
圖3B係異向導電性膜中之導電粒子之配置圖之變形例。
圖4係實施例之異向導電性膜1A中之導電粒子之配置圖。
圖5係實施例之異向導電性膜1B中之導電粒子之配置圖。
圖6係實施例之異向導電性膜1C中之導電粒子之配置圖。
圖7係實施例之異向導電性膜1D中之導電粒子之配置圖。
圖8係實施例之異向導電性膜中之導電粒子之配置圖。
圖9係實施例之異向導電性膜中之導電粒子之配置圖。
圖10係實施例之異向導電性膜中之導電粒子之配置圖。
圖11係實施例之異向導電性膜1E中之導電粒子之配置圖。
圖12係實施例之異向導電性膜1F中之導電粒子之配置圖。
圖13係比較例之異向導電性膜1G中之導電粒子之配置圖。
圖14係比較例之異向導電性膜中之導電粒子之配置圖。
圖15係比較例之異向導電性膜中之導電粒子之配置圖。
圖16係比較例之異向導電性膜中之導電粒子之配置圖。
圖17係比較例之異向導電性膜中之導電粒子之配置圖。
以下，一面參照圖式一面詳細地說明本發明。再者，各圖中，同一符號表示同一或同等之構成要素。
圖1係本發明之一實施例之異向導電性膜1中之導電粒子P之配置圖。該異向導電性膜1具有絕緣接著劑層2、及呈格子狀排列地固定於絕緣接著劑層2之導電粒子P。於本發明中，膜長度相對於膜寬度之比通常為5000以上。再者，於圖1中，虛線表示異向導電性膜1所連接之端子3之排列。
膜長度於實際使用中較佳為5m以上，更佳為10m以上，進而較佳為30m以上。又，上限並無特別，為了無需對先前之連接裝置進行過度之改造而抑制異向性連接之成本，較佳為5000m以下，更佳為1000m以下，進而更佳為500m以下。再者，膜寬度並無特別限制，但為了不僅對應於一般之電子零件之端子行區域亦對應於經窄邊緣化之端子行區域，較佳為0.3mm以上，就異向導電性膜之製造而言進而較佳為0.5mm以上，就製造穩定性之觀點而言，進而更佳為0.6mm以上。上限並無特別，一般為5mm以下。於將IC堆疊等用途中，存在要求較晶圓寬的情況，因此亦可為30cm左右。
關於異向導電性膜，為了如上所述般形成為長條，可利用連接帶進行連接，又，亦可為捲繞於捲芯之捲裝體。
<<導電粒子之真球度及粒徑>>
本發明之主要特徵之一在於導電粒子P為大致真球。此處，所謂大致真球係指下式所算出之真球度為70~100。
真球度={1-(So-Si)/So}×100
(式中，So為導電粒子之平面圖像中之該導電粒子之外接圓之面積，Si為導電粒子之平面圖像中之該導電粒子之內切圓之面積)
於該算出方法中，較佳為於異向導電性膜之面視野及剖面內拍攝導電粒子之平面圖像，計測各個平面圖像中任意之100個以上(較佳為200個以上)導電粒子之外接圓之面積及內切圓之面積，並求出外接圓之面積之平均值及內切圓之面積之平均值，設為上述So、Si。又，較佳為於面視野及剖面之任一者中，真球度均為上述範圍內。面視野及剖面之真球度之差較佳為20以內，更佳為10以內。生產異向導電性膜時之檢查主要於面視野內進行，異向性連接後之詳細之良否判定係於面視野及剖面之兩方面進行，因此較佳為真球度之差較小。
藉由將導電粒子P設為上述真球度之球，例如，於日本特開2014-60150號公報所記載般製造使用轉印模排列導電粒子之異向導電性膜時，導電粒子於轉印模上順暢地滾動，故而能將導電粒子高精度地填充至轉印模上之特定位置。因此，能將導電粒子精確地配置於具備特定之格子軸之排列中。與此相對，若導電粒子為柱狀，則導電粒子之滾動方向出現偏差，因此無法將導電粒子高精度地填充至轉印模，又，於即便為球狀但扁平的情況下，需要使供導電粒子填充之轉印模之凹處之直徑相對於導電粒子之粒徑相當大，因此難以精確地控制導電粒子之配置。
又，藉由將導電粒子P設為上述真球度並且抑制粒徑之不均，對於使用異向導電性膜將第1電子零件之端子與第2電子零件之端子進行連接之連接構造體，能藉由形成於端子之導電粒子之壓痕準確地評價連接狀態。尤其是藉由將導電粒子之粒徑之不均抑制為CV值(標準偏差/ 平均)20%以下，可準確地藉由壓痕評價連接狀態。又，於異向導電性連接時位於端子間之導電粒子整體被均等地加壓，能防止按壓力局部地集中。另一方面，於過度地使粒徑均勻的情況下，視端子尺寸有時會超規格，成為異向導電膜之成本之增加因素。與此相對，若CV值為20%以內，則對於端子尺寸較大者(FOG等)、較小者(COG等)均能藉由壓痕準確地確認連接狀態。
關於能藉由導電粒子之壓痕準確地評價連接狀態，係於任一種異向性連接中均要求，尤其於微間距之COG中較佳。即，可知於連接前之導電粒子之真球度較高且粒徑亦一致的情況下，若如圖2A所示，於在連接後之剖面中對向之端子3A、3B之間導電粒子P為扁平之圓，則對向之端子3A、3B經由導電粒子P而充分地壓接，可確實地獲得導通，但若如圖2B所示，因連接時之壓入不充分而導電粒子P未被壓碎，則壓接不充分，導致導通不良。於此種情況下，於COG中可藉由自玻璃側(透明基板側)之壓痕觀察而判定異向性連接是否良好。即，若如圖2A般扁平，則充分地出現壓痕，但於如圖2B般壓接之壓入不充分者中，難以出現充分之壓痕。因此，若導電粒子為大致真球，則壓痕之形狀容易變均勻，故而容易藉由壓痕判定壓接是否良好。尤其是於導電粒子分別獨立地隔開而配置之本發明的情況下，該情況變得顯著。根據此種原因，亦期望導電粒子為大致真球。
此處，粒徑之不均可藉由圖像型粒度分析裝置等算出。作為一例，未配置於異向導電性膜之、作為異向導電性膜之原料粒子之導電粒子之粒徑可使用濕式浮式粒徑-形狀分析裝置FPIA-3000(Malvern公司) 求出。於導電粒子已配置於異向導電性膜的情況下，可與上述真球度同樣地藉由平面圖像或剖面圖像求出。
又，根據導電粒子P之壓碎情況進行之連接狀態之評價尤其可於導電粒子P為於樹脂核設置有導電層之金屬被覆樹脂粒子的情況下良好地進行。
尤其，關於根據導電粒子P之壓碎情況進行之連接狀態之評價，於端子複數個排列的情況下可對每一端子比較壓碎情況，故而容易進行每一端子之連接狀態之評價。若可容易地掌握鄰接之端子間之連接狀態，則亦會令異向性連接步驟中之生產性提昇。此因若導電粒子為大致真球則容易更顯著地出現上述傾向，故而較佳。
與此相對，於導電粒子並非大致真球的情況下，導電粒子因與端子接觸之朝向而使壓碎情況不同，壓痕之態樣亦不同，因此無法藉由壓痕準確地評價連接狀態。進而，於柱狀的情況下，如圖2C所示，導電粒子P容易破碎，按壓力局部地集中而產生破碎之粒子，無法藉由變形之程度判斷連接狀態。又，於如圖2D所示粒徑過度不均的情況下，亦無法藉由變形之程度判斷連接狀態。進而，若粒徑存在較大之不均，則有產生對向之端子間導電粒子之夾持不充分者之虞，因此於使導通可靠性穩定化之方面亦欠佳。
作為真球度70~100之導電粒子，就獲取容易性而言，較佳為於樹脂核設置有導電層者。關於樹脂核，藉由利用懸濁聚合法或乳化聚合法、種子聚合法等公知之方法製造，可獲得某種程度之真球度者。藉由進而對其適當進行篩式分級或壓碎等操作，可獲得一定以上之真球度之樹 脂核。
樹脂核較佳為使用包含壓縮變形優異之塑膠材料之粒子，例如可由(甲基)丙烯酸酯系樹脂、聚苯乙烯系樹脂，苯乙烯-(甲基)丙烯酸共聚樹脂、胺酯(urethane)系樹脂、環氧系樹脂、酚系樹脂、丙烯腈-苯乙烯(AS)樹脂、苯胍胺樹脂、二乙烯苯系樹脂、苯乙烯系樹脂、聚酯樹脂等形成。
於例如由(甲基)丙烯酸酯系樹脂形成樹脂核的情況下，該(甲基)丙烯酸系樹脂較佳為(甲基)丙烯酸酯與進而視需要之具有能夠與其進行共聚合之反應性雙鍵之化合物及二官能或多官能性單體的共聚物。
樹脂核較佳為於異向性連接後被壓縮至70~80%左右之硬度。因此，作為樹脂核之壓縮變形之容易度，可根據所連接之電子零件之組合進行各種選擇。一般而言，較佳為20%變形時之壓縮硬度(K值)為1500~4000N/mm2之相對柔軟之粒子，於將FPC與FPC異向導電性連接的情況下(FOF)時亦較佳為20%變形時之壓縮硬度(K值)為1500~4000N/mm2之相對柔軟之粒子。於將IC晶片與玻璃基板異向導電性連接的情況下，較佳為20%變形時之壓縮硬度(K值)為3000~8000N/mm2之相對較硬之粒子。又，就不論材質如何均於配線表面形成氧化膜之電子零件而言，亦有較佳為使20%變形時之壓縮硬度(K值)為8000N/mm2以上從而變得更硬之粒子的情況。硬度之上限因材質為樹脂故而存在極限，因此無需特別設置。
此處，所謂20%變形時之壓縮硬度(K值)係指藉由使導電粒子於一方向負重而壓縮，且根據導電粒子之粒徑較原粒徑短20%時之負 重藉由下式所算出的數值，K值越小則越為柔軟之粒子。
K=(3/√2)F．S-8/2．R-1/2
(式中，F：導電粒子之20%壓縮變形時之負重
S：壓縮位移(mm)
R：導電粒子之半徑(mm))
再者，根據上述樹脂核之製造方法，存在將樹脂核製造成凝聚體(二次粒子)的情況。於該情況下，進行凝聚後之樹脂核之壓碎。於壓碎中，較佳為不使粒子形狀變形而使於溶劑乾燥時凝聚之樹脂核之凝聚體碎裂。此種操作可藉由使用氣流式微粉碎裝置而進行。作為此種裝置，可列舉桌上型實驗室噴射磨機A-O JET MILL或共噴射系統(均為Seishin Enterprise股份有限公司製造)等。亦可組合旋風分離器式之回收機構。
作為於真球度70~100之中獲得真球度相對較低之樹脂核之方法，可藉由製作粒徑之分佈較寬之樹脂粒子之凝聚體並適當調整分級、壓碎操作而獲得由複數個樹脂粒子之凝聚體所構成者，亦可將其設為樹脂核。關於突起之高度，作為一例可設為10~500nm、或粒徑之10%以下。
又，亦可於導電粒子之表面形成有突起。例如，可使用日本特開2015-8129號公報等所記載之導電粒子。藉由形成此種突起，能於異向性連接時刺破設置於端子之保護膜。突起之形成較佳為均等地存在於導電粒子之表面，但於異向導電性膜之製造步驟中之為了排列導電粒子而將導電粒子填充至模具之步驟中，突起之一部分亦可產生缺損。
作為導電粒子P之材質，除上述金屬被覆樹脂粒子以外，可 設為鎳、鈷、銀、銅、金、鈀、焊錫等金屬粒子等。亦可併用2種以上。再者，供製造異向導電性膜之導電粒子亦可形成2次粒子。
於本發明中，導電粒子P之粒徑D意指平均粒徑。就防止短路、及進行連接之端子間接合之穩定性之方面而言，導電粒子P之粒徑D較佳為1~30μm，更佳為2.5~15μm。有於異向導電性連接中在夾持導電粒子之端子設置有保護膜的情況或端子面並不平坦的情況，但若將導電粒徑較佳地設為2.5μm以上、進而較佳地設為3μm以上，則於此種情況下亦可利用端子穩定地夾持導電粒子。
<<導電粒子之個數密度>>
於本發明中，導電粒子P之個數密度可藉由根據連接對象之端子寬度或端子間距改變導電粒子P之排列而調整為適於確保導通可靠性之範圍。通常，於FOG連接及COG連接中，只要於一組對向之端子捕獲3個以上、較佳為10個以上之導電粒子，則均可獲得良好之導通特性。
例如，於設為連接對象之端子之寬度為導電粒徑之30倍以上之FOG連接的情況下，對向之端子彼此重疊之部分之面積(有效連接面積)充分，故而能藉由將導電粒子之個數密度設為7~25個/mm2而進行連接。更具體而言，於連接部之端子之寬度為0.2mm、端子之長度為2mm以上、端子間間隔為0.2mm(L/S=1)、異向導電性膜之膜寬為2mm且以其膜寬進行連接的情況下，能將導電粒子之密度減小至7~8個/mm2左右。於該情況下，膜寬可完全未連接，亦可利用膜寬以下之長度之工具進行按壓。此時，被按壓之部分成為有效連接面積，故而所連接之端子之長度成為2mm以下。
又，於連接對象之端子之長度與上述同樣長但寬度較窄的情況下(例如，端子寬度10~40μm之FPC)，於為了提高異向性連接步驟之生產性而包含作為連接之前步驟之對準步驟在內要求迅速之作業性時，為了可容許對向之端子之對準偏移所致之有效連接面積之減少，較佳為將導電粒子之個數密度設為38~500個/mm2。於因對準偏移而使端子之有效寬度較窄為10μm左右之狀態下，更佳為設為150~500個/mm2。
另一方面，於觸控面板等FOG連接等中，為了窄邊緣化，亦有端子之長度變短之情況，例如，需要進行端子之寬度為20~40μm、長度為0.7mm以下、較理想為0.5mm以下之FPC之連接。於該情況下，將導電粒子之個數密度較佳地設為108~2000個/mm2、更佳為500~2000個/mm2。
綜上所述，本發明中關於導電粒子之個數密度之下限值係由端子寬度或端子長度、或者連接之長度(工具寬度)所決定，較佳為7個/mm2以上，更佳為38個/mm2以上，進而更佳為108個/mm2以上，若為500個/mm2以上，則即便有效連接面積小至某種程度亦可應對。
導電粒子之個數密度亦可針對每一連接對象物而儘可能小，但若所製造之品種增加，則不適於大量生產，因此藉由設為上述下限值之最大值即500個/mm2以上之異向導電性膜，亦可覆蓋下限值較其小之品種。又，若還考慮大量生產中之製造範圍，則亦可追加20%左右而將600個/mm2設為下限值。其原因在於，與下述削減導電粒子之個數之效果相比，有時於減少所製造之品種之方面更具有效果。尤其是若個數密度為3000個/mm2以下、較佳為2500個/mm2以下、更佳為2000個/mm2以下，則 認為於在每一個端子具有5000μm2以上之有效連接面積之端子佈局中，存在充分之端子間距離(作為一例，若導電粒徑為5μm以下則為20μm以上、較佳為30μm以上、更佳為大於30μm之距離。或者導電粒徑之4倍以上、較佳為6倍以上、更佳為大於6倍之距離)。於該情況下，由於在本發明中將導電粒子單個獨立地配置，因此可無限地避免短路之產生，故而總成本之削減效果更明顯。如下所述，於本發明中為了方便而以30μm為界對微間距與正常間距加以區分，但隨著近年來攜帶型圖像顯示裝置之多樣化，電子零件亦多樣化。藉由將本發明中之導電粒子之個數密度設為如上所述可覆蓋多品種之設定，本發明成為相對於先前存在多種之異向導電性膜進一步進化之形態。
於異向導電性連接中，在FOG連接中及COG連接中，均較佳為容易連續地進行連接前之對電子零件之膜貼合步驟，且為了使導電粒子穩定地夾持於對向之端子間而使異向導電性膜1之膜寬方向與端子3之長度方向一致。另一方面，於FOG連接及COG連接中，若過度提高導電粒子之個數密度，則異向導電性膜之製造成本均增大，又，於異向導電性連接中均導致按壓力之上升。若於因微間距化而使端子數增加的情況下各端子所捕獲之導電粒子個數過多，則無法利用異向導電性連接所使用之先前之連接壓力裝置之按壓力進行應對。與此相對，改造裝置有增加成本之虞。
因此，於FOG連接中及COG連接中，為了抑制施加過度之按壓力，於1組對向之端子捕獲較佳為50個以下、更佳為40個以下、進而更佳為20個以下之導電粒子。
於COG連接中，存在各種端子尺寸，作為一例，若假定端 子寬度10μm、端子長度50μm的情況，則為了抑制施加過度之按壓力，導電粒子之個數密度較佳為100000個/mm2以下，更佳為80000個/mm2以下。
根據上述情況，較佳為不論端子之尺寸或面積如何，於1組對向之端子均捕獲較佳為3~50個、更佳為10~40個之導電粒子。若以成為此種捕獲數之方式設定導電粒子之個數密度，則於作為FOG連接之一例之端子寬度20~40μm、端子長度500~2000μm的情況下，較佳為40~3000個/mm2，尤佳為50~2500個/mm2。上述端子長度亦可考慮成設為所連接之面積之長度(即工具寬度)。又，於作為COG連接之一例之端子寬度5~50μm、端子長度30~300μm的情況下，較佳為4000~100000個/mm2，尤佳為5000~80000個/mm2。藉由將導電粒子之個數密度設為該範圍，能夠準備與端子寬度或端子長度相應之必需最小限度之導電粒子配置之圖案。再者，FOG及COG係用作一般之異向性連接之說明，電子零件未必限定於FPC、IC晶片、玻璃基板，只要為與此類似者均可進行替換。
<<導電粒子之排列>>
於本發明中，導電粒子P之排列成為導電粒子P以特定之導電粒子間距L1排列之第1軸A1以特定之軸間距L3並列的排列，且於圖1所示之異向導電性膜1中，第1軸A1之導電粒子間距L1、軸間距L3及鄰接之第1軸A1彼此之最接近粒子間距離L2如以下所說明般成為相對於導電粒徑D具有特定大小之格子狀排列，進而，形成導電粒子P之格子狀排列之主要3方向之格子軸A1、A2、A3與異向導電性膜之膜寬方向斜交。
藉由以此方式斜交，可期待導電粒子P於端子3之捕獲數穩 定之效果。若導電粒子P之格子軸(亦稱為排列軸)平行於矩形狀之端子3之外形、即平行於膜之長度方向或短邊方向，則於導電粒子P之排列存在於端子3之端部的情況下，產生全部被捕獲或全部未被捕獲之極端現象。若為了避免該情況而於膜之貼合時進行位置調整，則導致連接體之製造成本之增加，如隨時進行端子及膜內之導電粒子各者之位置特定等。為了避免該情況，關鍵在於在膜內之任一部位，捕獲至端子之數量均不產生極端之差。因此，期待使導電粒子P之排列軸A1、A2、A3斜交於膜寬方向(一般之異向性連接中之矩形狀端子之長度方向)。
<導電粒子間距L1>
於將導電粒子P之平均粒徑設為D的情況下，關於第1軸A1上之導電粒子間距L1，就使用該異向導電性膜1將第1電子零件之端子與第2電子零件之端子進行異向導電性連接時之、同一零件內之並列之端子間之短路防止、及第1、第2電子零件之對向之端子間之接合穩定性之方面而言，以導電粒子之中心間距離計設為1.5D以上。
第1軸A1上之導電粒子P可不嚴格地處於一直線上，亦可散佈於相對於軸間距L3充分小之寬度之帶狀線內。該不均之帶寬以導電粒子之中心間距離計較佳為未達導電粒徑D之0.5倍。該情況如上所述，對端子端部具有使導電粒子之捕獲數穩定之效果。
如上所述，較佳為使異向導電性膜1之膜寬方向與端子3之長度方向一致，故而於FOG連接的情況下，異向導電性膜1中之第1軸A1方向之導電粒子間距L1之長度最大可設為大致與端子3之長度方向之長度(以下，稱為端子長度)Lr相等。端子長度Lr通常為2000μm以下。 又，於在端子長度Lr2000μm配置3個導電粒子的情況下，較佳為將導電粒子間距L1設為未達1000D，尤其就穩定之導通性能之方面而言，較佳為221D以下。
另一方面，於COG連接的情況下，端子長度Lr通常為200μm以下，所假定之端子寬度Lq係假定對向之端子間之對準偏移而最小設為3μm。於該情況下，第1軸A1之端子3上之長度亦可最大設為大致與端子長度Lr相等，成為200μm以下。又，此處於存在3個以上之導電粒子的情況下，較佳為將導電粒子間距L1設為未達100D，尤其就穩定之導通性能之方面而言，較佳為22D以下，就第1軸A1之識別性之方面而言，更佳為10D以下。
再者，藉由將導電粒子之排列軸上之粒子間距最小之排列軸設為第1軸A1，於下述圖12、圖13等所示之排列態樣中，能夠容易理解地定義並設計粒子排列之特徵。
又，第1軸A1之導電粒子間距L1於微間距的情況下亦可並非嚴格地等間隔。又，於該情況下，例如，如圖3A所示，作為第1軸之間距，較佳為使寬窄之間距L1a、L1b規則地重複。其原因在於，若於同一格子軸內間距存在規則之寬窄，則能使存在端子之部位之導電粒子之個數密度相對較高，又，使不存在端子之部位(凸塊間間隔等)之導電粒子之個數密度相對較低。如此一來，使捕獲至端子之數量提高，容易避免短路危險。關於第2軸A2、第3軸A3上之導電粒子間距亦同樣。換言之，亦可使至少一個格子軸之軸間距之間隔規則地具有寬窄。
<軸間距L3>
關於第1軸A1之軸間距L3，若考慮1條第1軸A1內之導電粒子之不均寬度0.5D，則更佳為大於2D。又，於COG連接的情況下，於使導電粒子之捕獲數穩定之方面，較理想為1個端子與第1軸A1之3條以上之排列線相交。
又，軸間距L3之上限可根據導電粒子間距L1或連接對象適當選擇。於FOG連接的情況下，由於端子長度充分大於導電粒徑，故而於一條第1軸A1之排列線之一部分能夠捕獲足以確保導通之導電粒子，因此只要小於端子寬度即可，較佳為未達200D，更佳為未達80D。
另一方面，若假定利用TSV等堆疊IC晶片，則端子相當於最少為Φ30μm左右之焊料接合部，故而此處為了使第1軸A1之排列線相交3條以上，軸間距L3較佳為未達10D，更佳為未達4D。
<L1與L3之關係>
導電粒子之配置係以足以使導通穩定之導電粒子數至少存在於端子位置之方式進行設計。具體而言，作為所獲得之異向性連接體，較佳為以於端子之寬度方向導電粒子為1~5行、較佳為1~3行之、於端子長度之方向各行中存在數個至20個左右之方式設計導電粒子之配置。又，所捕獲之導電粒子之行較佳為相對於端子長度之方向不平行。其原因在於，因所捕獲之導電粒子之行相對於端子長度之方向不平行，故於一個電子零件之端子行、及不同電子零件之端子行中，均不存在捕獲數於沿端子之長度方向延伸之端部中極端地偏集之情況。若所捕獲之導電粒子之行與沿端子之長度方向延伸之端部平行，則有產生如下極端現象之虞，即，於被捕獲的情況下行之全部導電粒子均被捕獲，於未被捕獲的情況下，行之全部導電粒子 均未被捕獲。即，於以一定品質以上生產異向性連接體之方面，較佳為以上述方式進行。
當將連接之端子寬度未達30μm的情況設為微間距、將30μm以上的情況設為正常間距時，若為微間距，則於一個端子寬度內導電粒子排列只要存在1行即可，若端子寬度充分，則使其存在3行以下。
又，若為正常間距，則為了可藉由第1軸A1與膜寬方向所成之角θ1、及第1軸A1上之導電粒子之粒子間距L1之設定，而對每一個端子於1條第1軸A1獲得充分之導電粒子之捕獲，較佳為L1<L3。與此相對，於微間距的情況下，根據端子之尺寸(長度與寬度之比率)或端子間距離、端子之高度或端子表面之平滑性之程度等確定L3。
<鄰接之第1軸A1彼此之最接近粒子間距離L2>
鄰接之第1軸A1彼此之最接近粒子間距離L2成為第1軸A1之軸間距L3以上。如上所述，若為了確保粒子間距離而將L3設為1.5D以上，則L2亦成為1.5D以上，可避免短路危險。L2之最佳距離係由L1與L3之關係導出。
<3個格子軸之相對於膜寬之斜交>
於本實施例之異向導電性膜1中，由第1軸A1上之任意之導電粒子P0、於該第1軸A1上鄰接於導電粒子P0之導電粒子P1、及位於鄰接於該第1軸A1之第1軸且與導電粒子P0相距最接近粒子間距離L2之導電粒子P2所形成的3角形之各邊之延長成為格子軸，且關於該等格子軸，通過導電粒子P0、P1之第1軸A1、通過導電粒子P0、P2之第2軸A2、及通過導電粒子P1、P2之第3軸A3均分別與異向導電性膜1之膜寬方向斜交。藉 此，即便於異向導電性連接時之異向導電性膜1與端子3之對準中在任意之方向產生偏移，導電粒子P亦於端子3之邊緣上對齊成一行，可消除該導電粒子P一下自端子3脫離而無助於連接之問題。該效果於在異向導電性膜中進行連接之端子3為微間距的情況下較大。
再者，於端子3為正常間距的情況下，可相對於導電粒子間距L1使軸間距L3充分大，隨之可利用第1軸A1與膜寬方向所成之角θ1、導電粒子間距L1、及軸間距L3表示導電粒子P之排列。藉由如此利用第1軸A1之角θ1、導電粒子間距L1、軸間距L3表示導電粒子P之排列，容易進行使導電粒子之個數密度最小化之情況的設計。
又，由於上述3個格子軸A1、A2、A3相對於膜寬方向斜交，故而任一格子軸A1、A2、A3均無需與異向導電性膜之長度方向平行，可兼顧異向性連接之性能及生產性。
第1軸A1與膜寬方向所成之角θ1、第2軸A2與膜寬方向所成之角θ2、第3軸A3與膜寬方向所成之角θ3之較佳之大小係根據連接之端子3之間距Lp、寬度Lq、長度Lr而不同。
關於第1軸A1與膜寬方向所成之角θ1之上限之角θ1a，例如，FOG連接中所假定之最大之端子間距Lp為400μm左右，導電粒子P之較佳之粒徑D為2.5μm以上，故而若設為L/S=1而使格子軸相對於膜長方向於1端子寬度(200μm)傾斜導電粒徑(2.5μm)之量，則如圖1中以2點鏈線所示，第1軸A1與膜寬方向所成之上限之角θ1a成為ATAN(200/2.5)=1.558rad=89.29°。
於COG連接中，1個晶片中包含複數種尺寸之端子。於該 情況下，將最小之端子作為基準進行設定。例如，連接之晶片之端子寬度為4.5μm、端子長度為111μm時，第1軸A1與膜寬方向所成之角θ1之下限之角度成為ATAN(4.5/111)=0.405rad=2.3°。
又，於COG連接的情況下，以於最小之端子上最少跨越3條第1軸A1之方式使第1軸A1斜交於端子之長度方向，且以L1及L2上之導電粒子中心間距離滿足導電粒徑之1.5倍以上之條件之方式進行設計。藉由此種方式，第1軸上A1之導電粒子P不成為膜之寬度方向之直線性排列，可減少端子中之導電粒子之捕獲數之不均。尤其於微間距的情況下，如圖1所示，關於沿膜之寬度方向鄰接之導電粒子Pa、Pb、Pc，較佳為膜寬方向之切線Lb1、Lb2與導電粒子Pa、Pb重疊、即切線Lb1、Lb2貫穿導電粒子Pa、Pb之狀態。
第1軸A1與膜寬方向所成之角θ1較佳為根據異向導電性膜中連接之端子間距Lp或端子長度等設為以上述方式確定之角度以下，尤其就連接可靠性之方面而言，於將導電粒徑設為3μm以上的情況下，較佳為設為22°以上。
又，關於通過導電粒子P0、及與該導電粒子P0位於最接近粒子間距離L2之導電粒子P2之第2軸A2與膜寬方向所成之角θ2，就即便於異向導電性膜與端子之對準產生偏移的情況下亦充分地捕獲導電粒子、及異向導電性膜之製造之容易度之方面而言，設為未達90°，較佳為設為3°以上且87°以下。
再者，上述角度θ1、θ2、θ3為連接前之異向導電性膜中之角度，並不限於在異向性連接後端子所捕獲之導電粒子中維持該角度。 例如，即便第1軸A1之排列與端子之長度方向所成之角度於連接前為θ1，於連接後端子所捕獲之導電粒子之排列中亦有自θ1偏移者，連接前平行地並列之第1軸A1在連接後之端子上並列之排列並不限於平行。
<排列之具體例>
本發明之異向導電性膜只要如上所述第1軸A1、第2軸A2及第3軸A3與膜寬方向斜交，則如下所示可採用各種排列。再者，於以下之例中，導電粒子P之真球度為90%以上，平均粒徑D為3μm。
例如，圖4所示之異向導電性膜1A係將導電粒子間距L1設為6μm、將最接近粒子間距離L2設為6μm、將軸間距L3設為5.2μm、將第1軸A1與膜寬方向所成之角θ1設為15°、將第2軸A2與膜寬方向所成之角θ2設為45°、將第3軸A3與膜寬方向所成之角θ3設為75°者。該異向導電性膜1A中，導電粒子P排列成6方格子，且3個格子軸A1、A2、A3均與異向導電性膜之膜寬方向斜交。該異向導電性膜1A可較佳地使用於COG之異向導電性連接。
圖5所示之異向導電性膜1B係對於圖4所示之異向導電性膜1A，將導電粒子之排列沿第1軸A1方向拉長而成者。於該排列中，導電粒子間距L1為9μm，最接近粒子間距離L2為6.9μm，軸間距L3為5.2μm，第1軸A1與膜寬方向所成之角θ1為15°，第2軸A2與膜寬方向所成之角θ2為34°，第3軸A3與膜寬方向所成之角θ3為64°。
該異向導電性膜1B可較佳地使用於COG之異向導電性連接。
圖6所示之異向導電性膜1C係對於圖4所示之異向導電性膜1A，將導電粒子之排列沿與第1軸A1垂直之方向拉長而成者。於該排 列中，導電粒子間距L1為6μm，最接近粒子間距離L2為8μm，軸間距L3為7.4μm，第1軸A1與膜寬方向所成之角θ1為15°，第2軸A2與膜寬方向所成之角θ2為53°，第3軸A3與膜寬方向所成之角θ3為83°。
該異向導電性膜1C可較佳地使用於COG之異向導電性連接。
圖7所示之異向導電性膜1D係對於圖4所示之異向導電性膜1A，將第1軸A1與膜寬方向所成之角θ1設為6°而成者。於該排列中，導電粒子間距L1為6μm，最接近粒子間距離L2為6μm，軸間距L3為5.2μm，第1軸A1與膜寬方向所成之角θ1為6°，第2軸A2與膜寬方向所成之角θ2為54°，第3軸A3與膜寬方向所成之角θ3為66°。
該異向導電性膜1D可較佳地使用於COG之異向導電性連接。
圖11所示之異向導電性膜1E係對於上述異向導電性膜1A~1D，將導電粒子間距L1等擴大20倍左右而成者，具體而言，導電粒子間距L1為140μm，最接近粒子間距離L2為140μm，軸間距L3為121μm，第1軸A1與膜寬方向所成之角θ1為16°，第2軸A2與膜寬方向所成之角θ2為44°，第3軸A3與膜寬方向所成之角θ3為76°。
該異向導電性膜1E可較佳地使用於FOG之異向導電性連接。
圖12所示之異向導電性膜1F係對於上述異向導電性膜1E將導電粒子間距L1縮小至約1/5而成者，具體而言，導電粒子間距L1為31μm，最接近粒子間距離L2為140μm，軸間距L3為140μm，第1軸A1與膜寬方向所成之角θ1為44°，第2軸A2與膜寬方向所成之角θ2為46°，第3軸A3與膜寬方向所成之角θ3為59°。於如此軸間距L3相對於粒子間距L1充分大的情況下，於導電粒子之配置之設計方面，第2軸與膜寬 方向所成之角θ2和第3軸與膜寬方向所成之角θ3視為相等，只要規定第1軸及第3軸上之粒子配置即可。於該情況下，就端子之粒子捕獲性之方面而言，較佳為將與膜寬方向所成之角較小之軸設為第1軸。
該異向導電性膜1F可較佳地使用於FOG之異向導電性連接。
圖13所示之異向導電性膜1G係對於上述異向導電性膜1F將導電粒子間距L1擴大而成者，具體而言，導電粒子間距L1為70μm，最接近粒子間距離L2為140μm，軸間距L3為140μm，第1軸A1與膜寬方向所成之角θ1為44°，第2軸A2與膜寬方向所成之角θ2為46°，第3軸A3與膜寬方向所成之角θ3為75°。
該異向導電性膜1G可較佳地使用於FOG之異向導電性連接。
如上所述，導電粒子之配置形狀可為6方格子或者將其沿特定方向拉長、或壓縮而成之形狀(圖1、圖4等)，又，亦可於一條軸內使導電粒子間距規則地變化1(圖3A)。進而，例如，如圖3B所示，除第1軸A1、第2軸A2、第3軸A3以外，亦可添加導電粒子間距L4之第4軸A4作為新排列軸。於圖3B之態樣中，第4軸A4與第1軸A1平行。該圖中之導電粒子之配置亦可視為於以特定之軸間距並列之第1軸A1中之位於特定間隔者(第4軸A4)中自第1軸A1上之特定間隔之導電粒子之排列中規則地去除導電粒子而成的配置。即，於本發明之異向導電性膜中，具有第4軸作為與第1軸、第2軸或第3軸同一方向之格子軸，第4軸亦可為如下粒子配置，即，自與該第4軸同一方向之第1軸、第2軸或第3軸上之導電粒子之排列中規則地去除導電粒子而成的排列。於同一方向上粒子間距不同之第4軸、及第1軸、第2軸或第3軸分別具有特定之軸間距。若僅 緻密地填塞導電粒子，則於無助於連接之位置亦存在導電粒子，有導致成本增加之情況，又，若僅高密度地密鋪導電粒子，則視端子間距離亦會成為產生短路之因素，藉由自由第1軸A1、第2軸A2、第3軸A3構成之導電粒子之排列中適度地去除導電粒子，有時可抑制成本增加，亦可減少短路之產生。
此外，作為導電粒子之排列態樣，亦可於3角格子狀之排列中將一個排列軸方向之導電粒子錯開地排列。例如，於將端子呈鋸齒格子狀地配置的情況下，能使存在於端子間之導電粒子之數量相對較少。
<導電粒子之固定方法>
作為於絕緣接著劑層2將導電粒子P配置成上述格子狀排列而進行固定之方法，只要利用機械加工或雷射加工、光微影法等公知之方法製作具有與導電粒子P之排列對應之凹陷之模具，將導電粒子放入該模具，於導電粒子上填充絕緣接著劑層形成用組成物且自模具中取出，藉此將導電粒子轉印至絕緣接著劑層即可。亦可由此種模具以剛性更低之材質製成模具。
又，為了於絕緣接著劑層2將導電粒子P配置成上述格子狀排列，可使用於絕緣接著劑層形成組成物層之上設置以特定之配置形成有貫通孔之構件，且自該構件上方供給導電粒子P使其通過貫通孔等方法。
又，亦可製成排列有導電粒子之大小左右之突起的片體，於突起之頂面形成微黏著層，使導電粒子附著於該微黏著層並轉印至絕緣接著劑層。如此，關於本發明之異向導電性膜之製法並無特別限定。
<層構成>
層構成可採用各種形態。例如，可藉由將導電粒子配置於單層之絕緣 接著劑層上，並將該導電粒子壓入至絕緣接著劑層內，而使導電粒子與絕緣接著劑層之界面相距一定之深度而存在。
又，可於將導電粒子配置於單層之絕緣接著劑層上之後另外進行絕緣接著劑層之層壓等而將絕緣樹脂層製成2層構成，亦可重複該動作而製成3層以上之構成。第2層以後之絕緣接著劑層係為了提高黏性、或者控制異向性連接時之樹脂及導電粒子之流動而形成。
為了使導電粒子固定化，可使絕緣接著劑層形成用組成物含有光聚合性樹脂及光聚合起始劑並進行光照射而使導電粒子固定化。亦可使用無助於異向性連接時之反應性樹脂而利用於導電粒子之固定化、或上述轉印。
<絕緣接著劑層>
作為絕緣接著劑層2，可適當採用公知之異向導電性膜所使用之絕緣性樹脂層。例如，可使用含有丙烯酸酯化合物及光自由基聚合起始劑之光自由基聚合型樹脂層、含有丙烯酸酯化合物及熱自由基聚合起始劑之熱自由基聚合型樹脂層、含有環氧化合物及熱陽離子聚合起始劑之熱陽離子聚合型樹脂層、含有環氧化合物及熱陰離子聚合起始劑之熱陰離子聚合型樹脂層等。為了視需要將導電粒子P固定於絕緣接著劑層2，該等樹脂層可分別聚合。如於層構成中所說明般，亦可由複數個樹脂層形成絕緣接著劑層10。
又，為了將導電粒子P固定於絕緣接著劑層2，亦可視需要對絕緣接著劑層2調配氧化矽等絕緣性填料。
絕緣性填料之大小較佳為10~2000nm，調配量較佳為相對於形成絕緣接著劑層2之樹脂100質量份為1~60質量份。
關於絕緣接著劑層2之最低熔融黏度，無論單層或積層體，整體之最低熔融黏度均較佳為10~10000Pa．s。若為該範圍，則能將導電粒子精密地固定於任意位置，且於異向性連接中亦不會造成障礙。能夠應對連接方法或所連接之電子零件之多樣化。再者，作為一例，最低熔融黏度可使用旋轉式流變儀(TA instrument公司製造)，升溫速度為10℃/min、測定壓力為5g且保持固定，並使用直徑8mm之測定板求出。
<連接構造體>
本發明之異向導電性膜可於藉由熱或光將FPC、IC晶片、IC模組等第1電子零件與FPC、剛性基板、陶瓷基板、玻璃基板等第2電子零件異向導電性連接時較佳地應用。又，亦可堆疊IC晶片或IC模組而將第1電子零件彼此異向導電性連接。再者，本發明之異向導電性膜所連接之電子零件並不限定於該等。以此方式獲得之連接構造體亦為本發明之一部分。
作為使用異向導電性膜之電子零件之連接方法，例如，就提高連接可靠性之方面而言，較佳為將異向導電性膜之導電粒子於膜厚方向存在於附近一側之界面暫貼至配線基板等第2電子零件，對暫貼後之異向導電性膜搭載IC晶片等第1電子零件，並自第1電子零件側進行熱壓接。又，亦可利用光硬化而進行連接。
實施例
以下，基於實施例對本發明進行具體說明。
實施例1、比較例1
1.異向導電性膜之製造
為了研究導電粒子之真球度對異向導電性膜之導通特性造成之影響， 製造於表1所示之組成之絕緣接著劑層將該表所示之導電粒子配置成圖4所示之排列而成的COG用異向導電性膜。
即，於實施例1中，使用真球度90%以上之導電粒子(平均粒徑3μm)。該導電粒子係使用利用下述方法製作樹脂核並於其形成鍍敷層而成者。
(樹脂核之製作)
向調整過二乙烯苯、苯乙烯、甲基丙烯酸丁酯之混合比之水分散液中投入作為聚合起始劑之過氧化苯甲醯並一面高速地均勻攪拌一面進行加熱而進行聚合反應，藉此獲得微粒子分散液。藉由對上述微粒子分散液進行過濾減壓乾燥而獲得作為微粒子之凝聚體之塊體。進而，藉由將上述塊體粉碎並分級而獲得平均粒徑3μm之二乙烯苯系樹脂粒子作為樹脂核。粒子之硬度係調整二乙烯苯、苯乙烯、甲基丙烯酸丁酯之混合比而進行。
(鍍敷層之形成)
藉由浸漬法使鈀觸媒載持於所獲得之二乙烯苯系樹脂粒子(5g)。繼而，對該樹脂粒子使用由硫酸鎳六水合物、次磷酸鈉、檸檬酸鈉、三乙醇胺及硝酸鉈製備之無電解鎳鍍液(pH值12、鍍液溫度50℃)而進行無電解鍍鎳，從而製作具有鍍鎳層作為表面金屬層之鎳被覆樹脂粒子。
繼而，將該鎳被覆樹脂粒子(12g)混合於使氯金酸鈉10g溶解於離子交換水1000mL而成之溶液而製備水性懸濁液。向所獲得之水性懸濁液中投入硫代硫酸銨15g、亞硫酸銨80g、及磷酸氫銨40g，藉此製備金鍍浴。向所獲得之金鍍浴投入羥胺4g後，使用氨將金鍍浴之pH值調整為9，而且將浴溫於60℃維持15~20分鐘左右，藉此製作於鍍鎳層之表 面形成有鍍金層之導電粒子。
於比較例1中，使用圓柱狀導電性玻璃棒(平均長軸長4μm、平均短軸長3.9μm、真球度未達0.8)。該圓柱狀導電性玻璃棒係對導電性圓柱狀玻璃粒子(PF-39SSSCA、日本電氣硝子股份有限公司、平均短軸長3.9μm、平均長軸長14μm)加壓而使其碎裂並進行分級而獲得者。真球度未達70%。
另一方面，分別製備表1所示之組成之樹脂組成物，將其塗佈於膜厚度50μm之PET膜上，於80℃之烘箱中乾燥5分鐘，並於PET膜上以厚度15μm形成第1絕緣性樹脂層，以5μm形成第2絕緣性樹脂層。
又，製成具有對應於圖4所示之粒子排列之凸部之排列圖案的模具，使公知之透明性樹脂之顆粒以熔融之狀態流入至該模具並使其冷卻而凝固，藉此形成凹部為圖4所示之排列圖案之樹脂模具。
向該樹脂型之凹部填充導電粒子，於其上覆蓋上述第2絕緣性樹脂層，並於60℃、0.5MPa進行按壓，藉此使其貼合。繼而，自模具將絕緣性樹脂剝離，並於第2絕緣性樹脂層之存在導電粒子一側之界面於60℃、0.5MPa下積層第1絕緣性樹脂層，藉此製造實施例1及比較例1之異向導電性膜。
2.評價
以下述方式對使用實施例1及比較例1中製造之異向導電性膜進行COG連接的情況下之(a)初始導通電阻、(b)壓痕、(c)導電粒子捕獲性進行評價。將結果示於表1。
(a)初始導通電阻
使用如下評價用IC及玻璃基板作為進行COG連接之電子零件。
評價用IC
IC外形：1.8mm×20mm×0.2mm
金凸塊：15μm(高)×15μm(寬)×100μm(長)
(凸塊間間隙(間隔)15μm)
玻璃基板
玻璃材質Corning公司製造
外形30×50mm
厚度0.5mm
端子ITO配線
將實施例1及比較例1之異向導電性膜夾持於評價用IC與玻璃基板之間，進行加熱加壓(180℃、80MPa、5秒)而獲得各評價用連接物。於該情況下，使異向導電性膜之長度方向與端子之短邊方向一致。
使用數位萬用表(34401A、Agilent Technology股份有限公司製造)利用四端子法(JIS K7194)測定評價用連接物之導通電阻。只要為2Ω以下則於實際使用中不存在問題。
(b)壓痕
自玻璃基板側利用金屬顯微鏡觀察(a)中所獲得之評價用連接物，對端子所捕獲之200個導電粒子研究壓潰、或破碎之狀態，並算出壓潰率120%以上(導電粒子之面積成為連接前之120%以上者)之導電粒子個數相對於導電粒子之總個數之比率。其結果為，於實施例1中為90%以上。再者， 比較例1之壓潰率係求出圓柱之平均短軸長作為平均粒徑，但即便為經分級者亦為破碎物故而難以確認狀態，推定為未達40%。
又，關於在端子間壓潰之導電粒子，由下式算出之壓縮率於實施例1中為導電粒子個數之90%以上處於70%至80%之範圍，但於比較例1中破碎狀態並不均勻，因此未特別求出壓縮率。
壓縮率={(剖面觀察所得之所夾持之導電粒子之高度)/(位於端子間之導電粒子之平均粒徑)}×100
於實施例1中，可容易地識別各導電粒子之壓痕，可較比較例1更容易地根據連接後之壓痕及粒子之剖面形狀評價連接狀態。根據該情況可知，若導電粒子為真球，則可容易地確認連接狀態是否良好。
(c)粒子捕獲性
準備(a)中所使用之凸塊寬度15μm、凸塊間間隙15μm、凸塊長度100μm之IC作為評價用IC，並使用倒裝晶片接合機FC1000(TORAY ENGINEERING股份有限公司)一面以成為凸塊寬度15μm連接之區域之方式進行對準一面搭載IC，獲得評價用連接物(有效凸塊寬度15μm)。同樣，以成為凸塊寬度5μm連接之區域之方式有意地錯開對準而搭載IC(有效凸塊寬度5μm)，獲得評價用連接物。藉由觀察來自玻璃面之壓痕而研究各者中之導電粒子之捕獲數，以如下基準進行評價。若為C以上，則於實際使用中不存在問題。
A：10個以上
B：5個以上且未達10個
C：3個以上且未達5個
D：未達3個
再者，於比較例1及實施例1之異向導電性膜之製造步驟中將導電粒子填充至模具時，作業時間於實施例1中較比較例1快得多。又， 實施例1可較比較例1更順利地將導電粒子填充至模具，可作為異向導電性膜使用之膜面積格外大。即，作為異向導電性膜之產率於實施例1中格外良好。
實施例2~7、比較例2~5
為了研究導電粒子之排列對導通特性造成之影響，除如表2所示般變更導電粒子之排列以外，與實施例1同樣地製造實施例2~7及比較例2~5之COG用之異向導電性膜。再者，各實施例及比較例之導電粒子之排列圖案如圖所示。
使用所獲得之異向導電性膜製作評價用連接物，並與實施例1同樣地對其(a)初始導通電阻、(b)壓痕、(c)粒子捕獲性進行評價。又，以下述方式對(d)導通可靠性、(e)短路產生率進行評價。
將該等之結果與實施例1及比較例1之結果一併示於表2。
(d)導通可靠性
與實施例1之2(a)同樣地將所製作之評價用連接物置於溫度85℃、濕度85%RH之恆溫槽中500小時之後，與2(a)同樣地測定導通電阻。若該導通電阻為5Ω以上，則就連接之電子零件之實際使用之導通穩定性之方面而言欠佳。
(e)短路產生率
準備如下IC(7.5μm間隔之梳齒TEG(test element group，測試元件組))作為短路產生率之評價用IC。
外形1.5×13mm
厚度0.5mm
凸塊規格鍍金、高度15μm、尺寸25×140μm、凸塊間距離7.5μm
將異向導電性膜夾於短路產生率之評價用IC與對應於該評價用IC之圖案之玻璃基板之間，於與(a)相同之連接條件下進行加熱加壓而獲得連接物，求出該連接物之短路產生率。短路產生率係由「短路之產生數/7.5μm間隔總數」算出。算出之短路產生率只要未達50ppm即可，50ppm以上則不良(NG)。
根據表2，於導電粒子之排列之第1軸與膜寬方向平行之比較例2中，導電粒子之捕獲性較差，但於實施例之異向導電性膜中均獲得良好之評價。於比較例2、3之有效凸塊寬度為5μm中之捕獲數之評價中，於上述表中為實際使用中不存在問題之C評價，但產生N數越增大則越成為D評價之傾向(其他結果中傾向並無特別變化)。因此，雖判定為實際使用中不存在問題之C評價，但該等記載作為比較例。比較例2、3中之、N數越增大則越成為D評價之傾向可認為因於膜之貼合中產生微小之偏移故而產生之傾向。即，推測導電粒子之排列於膜之長度方向或短邊(寬度)方向上均傾斜者容易獲得性能穩定之異向性連接體。又，於實施例中，即便導電粒子之個數密度為16000個/mm2，導通特性及粒子捕獲性亦良好，但於比較例中，若為該數量之個數密度，則當有效凸塊寬度較窄為5μm時，捕獲性不良(NG)。
實施例8~10
為了研究導電粒子之排列對導通特性造成之影響，除如表3所示般變更導電粒子之排列以外，與實施例1同樣地製造實施例8~10之FOG用之異向導電性膜。
於該情況下，使用將以下之評價用可撓性配線板與玻璃基板以有效構裝面積率100%或80%連接(180℃、80MPa、5秒)而成者作為連接用評價物。
此處，作為連接用評價物，有效構裝面積率100%為可撓性配線板與玻璃基板之對準不存在偏移寬度或偏移寬度為2%以內者，80%為偏移寬度為20%者。
評價用可撓性配線板(FPC)
S/R PI系、PI 38μmt-S' perflex基材
配線長度2mm(使用工具寬1mm)
配線寬度200μm
1個端子之構裝面積0.2mm2
配線間隔200μm
凸塊高度8μm(Cu8μmt-鍍Sn)
玻璃基板Corning公司製造
外形30×50mm
厚度0.5mm
端子ITO配線
與實施例1同樣地對所獲得之評價用連接物之(a)初始導通電阻、(b)壓痕進行評價，與實施例2同樣地對(d)導通可靠性、(e)短路產生率進行評價。又，對有效構裝面積100%之連接評價物計測100個凸塊100中之導電粒子捕獲數，並求出1個凸塊中之平均粒子捕獲數(導電粒子捕獲數Ave)。
將該等之結果示於表3。
其次，將FPC及工具寬度變更為以下者，使用實施例8、9、10之異向導電性膜進行連接及評價。將結果示於表4。
評價用可撓性配線板(FPC)
S/R PI系、PI 38μmt-S' perflex基材
配線長度2mm(使用工具寬2mm)
配線寬度36μm
1個端子之構裝面積0.072mm2
配線間隔200μm
凸塊高度8μm(Cu 8μmt-鍍Sn)
由表3及表4可知，於FOG的情況下，只要每一個端子之導電粒子之捕獲數為3以上，則導通特性方面不存在問題。
1‧‧‧異向導電性膜
2‧‧‧絕緣接著劑層
3‧‧‧端子
A1‧‧‧第1軸
A2‧‧‧第2軸
A3‧‧‧第3軸
D‧‧‧導電粒徑
L1‧‧‧導電粒子間距
L2‧‧‧鄰接之第1軸彼此之最接近粒子間距離
L3‧‧‧軸間距
Lb1‧‧‧切線
Lb2‧‧‧切線
Lp‧‧‧端子間距
Lq‧‧‧端子寬度
Lr‧‧‧端子長度
P‧‧‧導電粒子
P0‧‧‧導電粒子
P1‧‧‧導電粒子
P2‧‧‧導電粒子
Pa‧‧‧導電粒子
Pb‧‧‧導電粒子
Pc‧‧‧導電粒子
θ1‧‧‧角
θ1a‧‧‧θ1之上限之角
θ2‧‧‧角
θ3‧‧‧角

Claims (9)

  1. 一種異向導電性膜，其包含絕緣接著劑層、及配置於該絕緣接著劑層之導電粒子，具有導電粒子以特定之粒子間距排列之第1軸以特定之軸間距並列之導電粒子排列，導電粒子為大致真球，於將導電粒子之平均粒徑設為D的情況下，第1軸上之導電粒子間距L1為1.5D以上，第1軸之軸間距L3為1.5D以上，由第1軸上之任意之導電粒子P0、於該第1軸上鄰接於導電粒子P0之導電粒子P1、及位於鄰接於該第1軸之第1軸且與導電粒子P0最接近之導電粒子P2形成的3角形之各邊之方向與異向導電性膜之膜寬方向斜交。
  2. 如申請專利範圍第1項之異向導電性膜，其中，導電粒子之由下式所算出之真球度為70~100，真球度={1-(So-Si)/So}×100(式中，So為導電粒子之平面圖像中之該導電粒子之外接圓之面積，Si為導電粒子之平面圖像中之該導電粒子之內切圓之面積)。
  3. 如申請專利範圍第1或2項之異向導電性膜，其中，異向導電性膜之膜長度相對於膜寬之比為5000以上。
  4. 如申請專利範圍第1至3項中任一項之異向導電性膜，其中，導電粒子排列於上述3角形之各邊之方向。
  5. 如申請專利範圍第1至4項中任一項之異向導電性膜，其中，將粒子 間距最小之排列軸設為第1軸。
  6. 如申請專利範圍第1至5項中任一項之異向導電性膜，其中，於導電粒子排列於3角形之各邊之方向，且將由各邊延長而成之格子軸設為第1軸、第2軸、第3軸的情況下，至少一條格子軸內之粒子間距由規則地重複出現寬窄間距的間距所構成。
  7. 如申請專利範圍第1至6項中任一項之異向導電性膜，其中，於導電粒子排列於3角形之各邊之方向，且將由各邊延長而成之格子軸設為第1軸、第2軸、第3軸的情況下，至少一條格子軸之軸間距規則地具有寬窄。
  8. 如申請專利範圍第1至7項中任一項之異向導電性膜，其中，於導電粒子排列於3角形之各邊之方向，且將由各邊延長而成之格子軸設為第1軸、第2軸、第3軸的情況下，具有第4軸作為與第1軸、第2軸或第3軸同一方向之格子軸，第4軸具有自與該第4軸同一方向之第1軸、第2軸或第3軸上之導電粒子之排列中規則地去除導電粒子而成之排列。
  9. 一種連接構造體，其利用申請專利範圍第1至8項中任一項之異向導電性膜將第1電子零件與第2電子零件異向導電性連接。
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