JP2016197699A - ウエーハの生成方法 - Google Patents
ウエーハの生成方法 Download PDFInfo
- Publication number
- JP2016197699A JP2016197699A JP2015078029A JP2015078029A JP2016197699A JP 2016197699 A JP2016197699 A JP 2016197699A JP 2015078029 A JP2015078029 A JP 2015078029A JP 2015078029 A JP2015078029 A JP 2015078029A JP 2016197699 A JP2016197699 A JP 2016197699A
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- wafer
- laser beam
- single crystal
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000926 separation method Methods 0.000 claims abstract description 53
- 239000013078 crystal Substances 0.000 claims description 46
- 238000005259 measurement Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 52
- 239000010410 layer Substances 0.000 description 41
- 238000003825 pressing Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 230000001902 propagating effect Effects 0.000 description 5
- 238000004441 surface measurement Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/355—Texturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :4ns
スポット径 :10μm
集光レンズの開口数(NA) :0.45
インデックス量 :400μm
H(x)=L−h(x)(tan)α/tanβが得られる。
11 六方晶単結晶インゴット
11a 第一の面(端面)
11b 第二の面(裏面)
13 第一のオリエンテーションフラット
15 第二のオリエンテーションフラット
17 第一の面の垂線
19 c軸
21 c面
23 改質層
25 クラック
26 支持テーブル
30 レーザービーム照射ユニット
36 集光器(レーザーヘッド)
50 対物レンズ(集光レンズ)
54 押圧機構
56 ヘッド
58 押圧部材
60 端面計測装置
Claims (3)
- インゴットからウエーハを生成するウエーハの生成方法であって、
インゴットの端面に存在する凹凸のウネリを計測する端面計測ステップと、
該端面計測ステップを実施した後、インゴットに対して透過性を有する波長のレーザービームの集光点を生成すべきウエーハの厚みに相当する深さに位置付けると共に、該集光点と該インゴットとを相対的に移動してレーザービームをインゴットの該端面に照射し、改質層及び該改質層から伸長するクラックを含む分離面を形成する分離面形成ステップと、
該分離面形成ステップを実施した後、該分離面からウエーハの厚みに相当する板状物をインゴットから分離してウエーハを生成するウエーハ分離ステップと、を備え、
該分離面形成ステップにおいて、レーザービームの集光点を形成する対物レンズの開口数NAとインゴットの屈折率Nとインゴットの該端面に存在する凹凸のウネリとに基づいて、同一平面上に集光点が位置付けられ分離面が形成されるように制御することを特徴とするウエーハの生成方法。 - インゴットの該端面とレーザービームの集光点が位置付けられる分離面との間の距離をh、対物レンズの開口数NAをsinβ、対物レンズの焦点距離をL、インゴットの屈折率Nをsinβ/sinα、インゴットの該端面から対物レンズまでの距離をHとすると、
H=L−h(tanα/tanβ)の位置に対物レンズが位置付けられるように制御する請求項1記載のウエーハの生成方法。 - 第一の面と該第一の面と反対側の第二の面と、該第一の面から該第二の面に至るc軸と、該c軸に直交するc面とを有する六方晶単結晶インゴットからウエーハを生成するウエーハの生成方法であって、
六方晶単結晶インゴットの第一の面に存在する凹凸のウネリを計測する端面計測ステップと、
端面計測ステップを実施した後、六方晶単結晶インゴットに対して透過性を有する波長のレーザービームの集光点を該第一の面から生成するウエーハの厚みに相当する深さに位置付けると共に、該集光点と該六方晶単結晶インゴットとを相対的に移動して該レーザービームを該第一の面に照射し、該第一の面に平行な改質層及び該改質層から伸長するクラックを含む分離面を形成する分離面形成ステップと、
該分離面形成ステップを実施した後、該分離面からウエーハの厚みに相当する板状物を該六方晶単結晶インゴットから剥離して六方晶単結晶ウエーハを生成するウエーハ剥離ステップと、を備え、
該分離面形成ステップは、該第一の面の垂線に対して該c軸がオフ角分傾き、該第一の面と該c面との間にオフ角が形成される方向と直交する方向にレーザービームの集光点を相対的に移動して直線状の改質層を形成する改質層形成ステップと、
該オフ角が形成される方向に該集光点を相対的に移動して所定量インデックスするインデックスステップと、を含み、
該分離面形成ステップにおいて、レーザービームの集光点を形成する対物レンズの開口数NAと六方晶単結晶インゴットの屈折率Nと六方晶単結晶インゴットの該第一の面に存在する凹凸のウネリとに基づいて、同一平面上に集光点が位置付けられ分離面が形成されるように制御することを特徴とするウエーハの生成方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078029A JP6494382B2 (ja) | 2015-04-06 | 2015-04-06 | ウエーハの生成方法 |
TW105105452A TWI663013B (zh) | 2015-04-06 | 2016-02-24 | Wafer generation method |
SG10201601981YA SG10201601981YA (en) | 2015-04-06 | 2016-03-15 | Wafer producing method |
MYPI2016700894A MY177235A (en) | 2015-04-06 | 2016-03-15 | Wafer producing method |
CN201610191903.1A CN106041294B (zh) | 2015-04-06 | 2016-03-30 | 晶片的生成方法 |
US15/088,441 US10081076B2 (en) | 2015-04-06 | 2016-04-01 | Wafer producing method |
DE102016205589.5A DE102016205589A1 (de) | 2015-04-06 | 2016-04-05 | Wafer-Herstellungsverfahren |
KR1020160042089A KR102409602B1 (ko) | 2015-04-06 | 2016-04-06 | 웨이퍼의 생성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078029A JP6494382B2 (ja) | 2015-04-06 | 2015-04-06 | ウエーハの生成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016197699A true JP2016197699A (ja) | 2016-11-24 |
JP6494382B2 JP6494382B2 (ja) | 2019-04-03 |
Family
ID=56937654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015078029A Active JP6494382B2 (ja) | 2015-04-06 | 2015-04-06 | ウエーハの生成方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10081076B2 (ja) |
JP (1) | JP6494382B2 (ja) |
KR (1) | KR102409602B1 (ja) |
CN (1) | CN106041294B (ja) |
DE (1) | DE102016205589A1 (ja) |
MY (1) | MY177235A (ja) |
SG (1) | SG10201601981YA (ja) |
TW (1) | TWI663013B (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018118296A (ja) * | 2017-01-27 | 2018-08-02 | 株式会社ディスコ | レーザー加工装置 |
JP2018183788A (ja) * | 2017-04-24 | 2018-11-22 | 株式会社ディスコ | レーザー加工装置、及びレーザー加工方法 |
JP2019500220A (ja) * | 2016-01-05 | 2019-01-10 | シルテクトラ ゲゼルシャフト ミット ベシュレンクター ハフトゥング | 固体状物における改質の平面生成のための装置及び方法 |
JP2019511122A (ja) * | 2016-03-22 | 2019-04-18 | シルテクトラ ゲゼルシャフト ミット ベシュレンクター ハフトゥング | 分離されるべき固体物の複合レーザ処理 |
US10388526B1 (en) | 2018-04-20 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US10468304B1 (en) | 2018-05-31 | 2019-11-05 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
JP2020047619A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
JP2020519756A (ja) * | 2017-05-17 | 2020-07-02 | ゼネラル・エレクトリック・カンパニイ | ターボ機械の表面処理 |
US10896815B2 (en) | 2018-05-22 | 2021-01-19 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
US10978311B2 (en) | 2016-12-12 | 2021-04-13 | Siltectra Gmbh | Method for thinning solid body layers provided with components |
US11121035B2 (en) | 2018-05-22 | 2021-09-14 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
US11830771B2 (en) | 2018-05-31 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US11854889B2 (en) | 2018-05-24 | 2023-12-26 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6553940B2 (ja) * | 2015-05-15 | 2019-07-31 | 株式会社ディスコ | レーザー加工装置 |
JP6478821B2 (ja) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | ウエーハの生成方法 |
JP6908464B2 (ja) * | 2016-09-15 | 2021-07-28 | 株式会社荏原製作所 | 基板加工方法および基板加工装置 |
JP6976828B2 (ja) * | 2017-11-24 | 2021-12-08 | 株式会社ディスコ | 剥離装置 |
JP7123583B2 (ja) * | 2018-03-14 | 2022-08-23 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP6967179B2 (ja) * | 2019-11-20 | 2021-11-17 | 信越エンジニアリング株式会社 | ワーク分離装置及びワーク分離方法 |
JP2022050939A (ja) * | 2020-09-18 | 2022-03-31 | 株式会社ディスコ | ウエーハの生成方法 |
CN114799532B (zh) * | 2022-05-09 | 2023-01-24 | 吉林大学 | 激光辐照结合蜡封抛光制备高质量非晶合金微凹坑的方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005028423A (ja) * | 2003-07-09 | 2005-02-03 | Disco Abrasive Syst Ltd | レーザー加工方法およびレーザー加工装置 |
JP2005193286A (ja) * | 2004-01-09 | 2005-07-21 | Hamamatsu Photonics Kk | レーザ加工方法及びレーザ加工装置 |
JP2008016577A (ja) * | 2006-07-05 | 2008-01-24 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP2008244121A (ja) * | 2007-03-27 | 2008-10-09 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
JP2009061462A (ja) * | 2007-09-05 | 2009-03-26 | Sumitomo Electric Ind Ltd | 基板の製造方法および基板 |
JP2009140959A (ja) * | 2007-12-03 | 2009-06-25 | Tokyo Seimitsu Co Ltd | レーザーダイシング装置及びダイシング方法 |
JP2011000600A (ja) * | 2009-06-17 | 2011-01-06 | Disco Abrasive Syst Ltd | 集光レンズ及びレーザー加工装置 |
JP2012121031A (ja) * | 2010-12-06 | 2012-06-28 | Disco Corp | レーザー加工装置 |
JP2012232358A (ja) * | 2011-04-28 | 2012-11-29 | Kyocera Corp | 単結晶体の切断方法 |
JP2013000748A (ja) * | 2011-06-10 | 2013-01-07 | Showa Denko Kk | 半導体ウエーハのレーザ加工方法、半導体発光チップの製造方法およびレーザ加工装置 |
JP2013049161A (ja) * | 2011-08-30 | 2013-03-14 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
WO2013176089A1 (ja) * | 2012-05-23 | 2013-11-28 | 浜松ホトニクス株式会社 | 加工対象物切断方法、加工対象物、及び、半導体素子 |
JP2014192381A (ja) * | 2013-03-27 | 2014-10-06 | Tokyo Seimitsu Co Ltd | 半導体ウエハマッピング方法及び半導体ウエハのレーザ加工方法 |
JP2015032771A (ja) * | 2013-08-06 | 2015-02-16 | 株式会社ディスコ | ウェーハの製造方法 |
Family Cites Families (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5223692A (en) | 1991-09-23 | 1993-06-29 | General Electric Company | Method and apparatus for laser trepanning |
FR2716303B1 (fr) | 1994-02-11 | 1996-04-05 | Franck Delorme | Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement. |
US5561544A (en) | 1995-03-06 | 1996-10-01 | Macken; John A. | Laser scanning system with reflecting optics |
TW350095B (en) | 1995-11-21 | 1999-01-11 | Daido Hoxan Inc | Cutting method and apparatus for semiconductor materials |
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
US6720522B2 (en) | 2000-10-26 | 2004-04-13 | Kabushiki Kaisha Toshiba | Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining |
JP2002184724A (ja) * | 2000-12-13 | 2002-06-28 | Komatsu Ltd | シリコンインゴット切断装置、シリコンインゴットの切断方法、及びシリコンウェハ |
JP4731050B2 (ja) | 2001-06-15 | 2011-07-20 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
CN100485902C (zh) | 2002-03-12 | 2009-05-06 | 浜松光子学株式会社 | 基板的分割方法 |
TWI520269B (zh) * | 2002-12-03 | 2016-02-01 | Hamamatsu Photonics Kk | Cutting method of semiconductor substrate |
US20040144301A1 (en) | 2003-01-24 | 2004-07-29 | Neudeck Philip G. | Method for growth of bulk crystals by vapor phase epitaxy |
JP2005268752A (ja) | 2004-02-19 | 2005-09-29 | Canon Inc | レーザ割断方法、被割断部材および半導体素子チップ |
US20050217560A1 (en) | 2004-03-31 | 2005-10-06 | Tolchinsky Peter G | Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same |
KR100854986B1 (ko) | 2004-06-11 | 2008-08-28 | 쇼와 덴코 가부시키가이샤 | 화합물 반도체 소자 웨이퍼의 제조방법 |
JP2006108532A (ja) | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
JP2006142556A (ja) * | 2004-11-17 | 2006-06-08 | Sharp Corp | 基板製造装置および基板製造方法 |
JP2006315017A (ja) * | 2005-05-11 | 2006-11-24 | Canon Inc | レーザ切断方法および被切断部材 |
JP4809632B2 (ja) | 2005-06-01 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2007019379A (ja) | 2005-07-11 | 2007-01-25 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP4749799B2 (ja) | 2005-08-12 | 2011-08-17 | 浜松ホトニクス株式会社 | レーザ加工方法 |
US9138913B2 (en) * | 2005-09-08 | 2015-09-22 | Imra America, Inc. | Transparent material processing with an ultrashort pulse laser |
JP4183093B2 (ja) | 2005-09-12 | 2008-11-19 | コバレントマテリアル株式会社 | シリコンウエハの製造方法 |
WO2007055010A1 (ja) * | 2005-11-10 | 2007-05-18 | Renesas Technology Corp. | 半導体装置の製造方法および半導体装置 |
US20070111480A1 (en) * | 2005-11-16 | 2007-05-17 | Denso Corporation | Wafer product and processing method therefor |
JP2007329391A (ja) | 2006-06-09 | 2007-12-20 | Disco Abrasive Syst Ltd | 半導体ウェーハの結晶方位指示マーク検出機構 |
US8980445B2 (en) | 2006-07-06 | 2015-03-17 | Cree, Inc. | One hundred millimeter SiC crystal grown on off-axis seed |
JP4959318B2 (ja) * | 2006-12-20 | 2012-06-20 | 株式会社ディスコ | ウエーハの計測装置およびレーザー加工機 |
EP2009687B1 (en) | 2007-06-29 | 2016-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device |
JP5011072B2 (ja) | 2007-11-21 | 2012-08-29 | 株式会社ディスコ | レーザー加工装置 |
US8338218B2 (en) | 2008-06-26 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module |
JP5692969B2 (ja) * | 2008-09-01 | 2015-04-01 | 浜松ホトニクス株式会社 | 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム |
JP5420890B2 (ja) * | 2008-12-18 | 2014-02-19 | 株式会社ディスコ | チャックテーブルに保持された被加工物の高さ位置計測装置 |
BRPI1008737B1 (pt) | 2009-02-25 | 2019-10-29 | Nichia Corp | método para fabricar elemento semicondutor |
US8940572B2 (en) | 2009-04-21 | 2015-01-27 | Tetrasun, Inc. | Method for forming structures in a solar cell |
JP5537081B2 (ja) | 2009-07-28 | 2014-07-02 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP5379604B2 (ja) | 2009-08-21 | 2013-12-25 | 浜松ホトニクス株式会社 | レーザ加工方法及びチップ |
JP2011165766A (ja) | 2010-02-05 | 2011-08-25 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
JP5558128B2 (ja) | 2010-02-05 | 2014-07-23 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
US8722516B2 (en) | 2010-09-28 | 2014-05-13 | Hamamatsu Photonics K.K. | Laser processing method and method for manufacturing light-emitting device |
RU2459691C2 (ru) | 2010-11-29 | 2012-08-27 | Юрий Георгиевич Шретер | Способ отделения поверхностного слоя полупроводникового кристалла (варианты) |
JP5480169B2 (ja) | 2011-01-13 | 2014-04-23 | 浜松ホトニクス株式会社 | レーザ加工方法 |
WO2012108054A1 (ja) * | 2011-02-10 | 2012-08-16 | 信越ポリマー株式会社 | 単結晶基板の製造方法および内部改質層形成単結晶部材の製造方法 |
JP5904720B2 (ja) | 2011-05-12 | 2016-04-20 | 株式会社ディスコ | ウエーハの分割方法 |
JP5912287B2 (ja) | 2011-05-19 | 2016-04-27 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
JP5912293B2 (ja) | 2011-05-24 | 2016-04-27 | 株式会社ディスコ | レーザー加工装置 |
JP6002982B2 (ja) | 2011-08-31 | 2016-10-05 | 株式会社フジシール | パウチ容器 |
JP5878330B2 (ja) | 2011-10-18 | 2016-03-08 | 株式会社ディスコ | レーザー光線の出力設定方法およびレーザー加工装置 |
JP2014041924A (ja) | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
JP6090998B2 (ja) | 2013-01-31 | 2017-03-08 | 一般財団法人電力中央研究所 | 六方晶単結晶の製造方法、六方晶単結晶ウエハの製造方法 |
US9768343B2 (en) | 2013-04-29 | 2017-09-19 | OB Realty, LLC. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
US20150121960A1 (en) | 2013-11-04 | 2015-05-07 | Rofin-Sinar Technologies Inc. | Method and apparatus for machining diamonds and gemstones using filamentation by burst ultrafast laser pulses |
US9850160B2 (en) * | 2013-12-17 | 2017-12-26 | Corning Incorporated | Laser cutting of display glass compositions |
US9757815B2 (en) * | 2014-07-21 | 2017-09-12 | Rofin-Sinar Technologies Inc. | Method and apparatus for performing laser curved filamentation within transparent materials |
JP6390898B2 (ja) | 2014-08-22 | 2018-09-19 | アイシン精機株式会社 | 基板の製造方法、加工対象物の切断方法、及び、レーザ加工装置 |
JP6358941B2 (ja) | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395613B2 (ja) | 2015-01-06 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395633B2 (ja) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395634B2 (ja) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6425606B2 (ja) | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | ウエーハの生成方法 |
JP6472333B2 (ja) | 2015-06-02 | 2019-02-20 | 株式会社ディスコ | ウエーハの生成方法 |
JP6482389B2 (ja) | 2015-06-02 | 2019-03-13 | 株式会社ディスコ | ウエーハの生成方法 |
JP6482423B2 (ja) | 2015-07-16 | 2019-03-13 | 株式会社ディスコ | ウエーハの生成方法 |
JP6486240B2 (ja) | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP6486239B2 (ja) | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP6602207B2 (ja) * | 2016-01-07 | 2019-11-06 | 株式会社ディスコ | SiCウエーハの生成方法 |
-
2015
- 2015-04-06 JP JP2015078029A patent/JP6494382B2/ja active Active
-
2016
- 2016-02-24 TW TW105105452A patent/TWI663013B/zh active
- 2016-03-15 SG SG10201601981YA patent/SG10201601981YA/en unknown
- 2016-03-15 MY MYPI2016700894A patent/MY177235A/en unknown
- 2016-03-30 CN CN201610191903.1A patent/CN106041294B/zh active Active
- 2016-04-01 US US15/088,441 patent/US10081076B2/en active Active
- 2016-04-05 DE DE102016205589.5A patent/DE102016205589A1/de active Pending
- 2016-04-06 KR KR1020160042089A patent/KR102409602B1/ko active IP Right Grant
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005028423A (ja) * | 2003-07-09 | 2005-02-03 | Disco Abrasive Syst Ltd | レーザー加工方法およびレーザー加工装置 |
US20080105662A1 (en) * | 2003-07-09 | 2008-05-08 | Koichi Shigematsu | Laser beam processing method and laser beam processing machine |
JP2005193286A (ja) * | 2004-01-09 | 2005-07-21 | Hamamatsu Photonics Kk | レーザ加工方法及びレーザ加工装置 |
JP2008016577A (ja) * | 2006-07-05 | 2008-01-24 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP2008244121A (ja) * | 2007-03-27 | 2008-10-09 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
JP2009061462A (ja) * | 2007-09-05 | 2009-03-26 | Sumitomo Electric Ind Ltd | 基板の製造方法および基板 |
JP2009140959A (ja) * | 2007-12-03 | 2009-06-25 | Tokyo Seimitsu Co Ltd | レーザーダイシング装置及びダイシング方法 |
JP2011000600A (ja) * | 2009-06-17 | 2011-01-06 | Disco Abrasive Syst Ltd | 集光レンズ及びレーザー加工装置 |
JP2012121031A (ja) * | 2010-12-06 | 2012-06-28 | Disco Corp | レーザー加工装置 |
JP2012232358A (ja) * | 2011-04-28 | 2012-11-29 | Kyocera Corp | 単結晶体の切断方法 |
JP2013000748A (ja) * | 2011-06-10 | 2013-01-07 | Showa Denko Kk | 半導体ウエーハのレーザ加工方法、半導体発光チップの製造方法およびレーザ加工装置 |
JP2013049161A (ja) * | 2011-08-30 | 2013-03-14 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
WO2013176089A1 (ja) * | 2012-05-23 | 2013-11-28 | 浜松ホトニクス株式会社 | 加工対象物切断方法、加工対象物、及び、半導体素子 |
JP2013247147A (ja) * | 2012-05-23 | 2013-12-09 | Hamamatsu Photonics Kk | 加工対象物切断方法、加工対象物、及び、半導体素子 |
JP2014192381A (ja) * | 2013-03-27 | 2014-10-06 | Tokyo Seimitsu Co Ltd | 半導体ウエハマッピング方法及び半導体ウエハのレーザ加工方法 |
JP2015032771A (ja) * | 2013-08-06 | 2015-02-16 | 株式会社ディスコ | ウェーハの製造方法 |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11059202B2 (en) | 2016-01-05 | 2021-07-13 | Siltectra Gmbh | Method and device for producing planar modifications in solid bodies |
JP2019500220A (ja) * | 2016-01-05 | 2019-01-10 | シルテクトラ ゲゼルシャフト ミット ベシュレンクター ハフトゥング | 固体状物における改質の平面生成のための装置及び方法 |
US11130200B2 (en) | 2016-03-22 | 2021-09-28 | Siltectra Gmbh | Combined laser treatment of a solid body to be split |
JP2019511122A (ja) * | 2016-03-22 | 2019-04-18 | シルテクトラ ゲゼルシャフト ミット ベシュレンクター ハフトゥング | 分離されるべき固体物の複合レーザ処理 |
US10978311B2 (en) | 2016-12-12 | 2021-04-13 | Siltectra Gmbh | Method for thinning solid body layers provided with components |
KR102325714B1 (ko) * | 2017-01-27 | 2021-11-11 | 가부시기가이샤 디스코 | 레이저 가공 장치 |
KR20180088582A (ko) * | 2017-01-27 | 2018-08-06 | 가부시기가이샤 디스코 | 레이저 가공 장치 |
JP2018118296A (ja) * | 2017-01-27 | 2018-08-02 | 株式会社ディスコ | レーザー加工装置 |
TWI743297B (zh) * | 2017-01-27 | 2021-10-21 | 日商迪思科股份有限公司 | 雷射加工裝置 |
JP2018183788A (ja) * | 2017-04-24 | 2018-11-22 | 株式会社ディスコ | レーザー加工装置、及びレーザー加工方法 |
JP7214655B2 (ja) | 2017-05-17 | 2023-01-30 | ゼネラル・エレクトリック・カンパニイ | ターボ機械の表面処理 |
JP2020519756A (ja) * | 2017-05-17 | 2020-07-02 | ゼネラル・エレクトリック・カンパニイ | ターボ機械の表面処理 |
US10665458B2 (en) | 2018-04-20 | 2020-05-26 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US10388526B1 (en) | 2018-04-20 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US11152211B2 (en) | 2018-04-20 | 2021-10-19 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US11121035B2 (en) | 2018-05-22 | 2021-09-14 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
US10896815B2 (en) | 2018-05-22 | 2021-01-19 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
US11373859B2 (en) | 2018-05-22 | 2022-06-28 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
US11823953B2 (en) | 2018-05-22 | 2023-11-21 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
US11854889B2 (en) | 2018-05-24 | 2023-12-26 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
US10468304B1 (en) | 2018-05-31 | 2019-11-05 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US10770351B2 (en) | 2018-05-31 | 2020-09-08 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US11830771B2 (en) | 2018-05-31 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
JP7128067B2 (ja) | 2018-09-14 | 2022-08-30 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
JP2020047619A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
Also Published As
Publication number | Publication date |
---|---|
CN106041294B (zh) | 2019-08-16 |
US10081076B2 (en) | 2018-09-25 |
CN106041294A (zh) | 2016-10-26 |
US20160288251A1 (en) | 2016-10-06 |
TW201706066A (zh) | 2017-02-16 |
KR20160119717A (ko) | 2016-10-14 |
TWI663013B (zh) | 2019-06-21 |
SG10201601981YA (en) | 2016-11-29 |
KR102409602B1 (ko) | 2022-06-17 |
DE102016205589A1 (de) | 2016-10-06 |
JP6494382B2 (ja) | 2019-04-03 |
MY177235A (en) | 2020-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6494382B2 (ja) | ウエーハの生成方法 | |
JP6472333B2 (ja) | ウエーハの生成方法 | |
JP6395613B2 (ja) | ウエーハの生成方法 | |
JP6395633B2 (ja) | ウエーハの生成方法 | |
JP6399913B2 (ja) | ウエーハの生成方法 | |
JP6604891B2 (ja) | ウエーハの生成方法 | |
JP6482423B2 (ja) | ウエーハの生成方法 | |
JP6358941B2 (ja) | ウエーハの生成方法 | |
JP6391471B2 (ja) | ウエーハの生成方法 | |
JP6395632B2 (ja) | ウエーハの生成方法 | |
JP6602207B2 (ja) | SiCウエーハの生成方法 | |
JP6395634B2 (ja) | ウエーハの生成方法 | |
JP6482389B2 (ja) | ウエーハの生成方法 | |
JP6429715B2 (ja) | ウエーハの生成方法 | |
JP6425606B2 (ja) | ウエーハの生成方法 | |
JP6358940B2 (ja) | ウエーハの生成方法 | |
JP6399914B2 (ja) | ウエーハの生成方法 | |
JP6355540B2 (ja) | ウエーハの生成方法 | |
JP6494457B2 (ja) | ウエーハの生成方法 | |
JP6366485B2 (ja) | ウエーハの生成方法 | |
JP6418927B2 (ja) | ウエーハの生成方法 | |
JP6472332B2 (ja) | ウエーハの生成方法 | |
JP6366486B2 (ja) | ウエーハの生成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180221 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181011 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181217 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190305 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190305 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6494382 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |