JP2016139452A - 半導体装置の動作方法 - Google Patents

半導体装置の動作方法 Download PDF

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Publication number
JP2016139452A
JP2016139452A JP2016009431A JP2016009431A JP2016139452A JP 2016139452 A JP2016139452 A JP 2016139452A JP 2016009431 A JP2016009431 A JP 2016009431A JP 2016009431 A JP2016009431 A JP 2016009431A JP 2016139452 A JP2016139452 A JP 2016139452A
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transistor
electrode
period
potential
terminal
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JP2016139452A5 (https=
Inventor
将志 津吹
Masashi Tsubuki
将志 津吹
雅史 藤田
Masafumi Fujita
雅史 藤田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2021095739A priority Critical patent/JP7179913B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0045—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Power Engineering (AREA)
JP2016009431A 2015-01-23 2016-01-21 半導体装置の動作方法 Withdrawn JP2016139452A (ja)

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JP2015011714 2015-01-23
JP2015011714 2015-01-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019130144A1 (ja) * 2017-12-27 2019-07-04 株式会社半導体エネルギー研究所 記憶装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180109902A (ko) 2016-01-29 2018-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
US9806720B1 (en) 2016-10-07 2017-10-31 Analog Devices Global Compound semiconductor based inverter
EP4715819A1 (en) * 2024-09-18 2026-03-25 Imec VZW Non-volatile memory with stacked transistor pair
FR3167475A1 (fr) * 2024-10-15 2026-04-17 Commissariat à l'Energie Atomique et aux Energies Alternatives Dispositif mémoire comprenant une cellule mémoire à surface active optimisée

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954097A (ja) * 1982-09-22 1984-03-28 Hitachi Ltd 半導体メモリ装置
JP2000339977A (ja) * 1999-05-28 2000-12-08 Nec Corp データ設定方法および装置、データ記憶装置、情報記憶媒体
JP2007193862A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 不揮発性半導体記憶装置
US20110116310A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2011176294A (ja) * 2010-01-29 2011-09-08 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US20110286290A1 (en) * 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US20120099368A1 (en) * 2010-10-20 2012-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device

Family Cites Families (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3171836D1 (en) 1980-12-08 1985-09-19 Toshiba Kk Semiconductor memory device
JPH01159895A (ja) 1987-12-17 1989-06-22 Sharp Corp 電気的に書き込み可能な不揮発性メモリに於けるデータ書き込み方法
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3226677B2 (ja) 1993-09-21 2001-11-05 株式会社東芝 不揮発性半導体記憶装置
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
TW461096B (en) 1999-05-13 2001-10-21 Hitachi Ltd Semiconductor memory
JP2001319486A (ja) 2000-05-12 2001-11-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2001351386A (ja) 2000-06-07 2001-12-21 Sony Corp 半導体記憶装置およびその動作方法
JP3875570B2 (ja) 2001-02-20 2007-01-31 株式会社東芝 半導体記憶装置のデータ書き込み方法及び半導体記憶装置
JP4907011B2 (ja) 2001-04-27 2012-03-28 株式会社半導体エネルギー研究所 不揮発性メモリとその駆動方法、及び半導体装置
TW559814B (en) 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
US6876572B2 (en) 2003-05-21 2005-04-05 Altera Corporation Programmable logic devices with stabilized configuration cells for reduced soft error rates
US7336572B1 (en) 2004-08-19 2008-02-26 Marvell International Ltd. Detecting sync patterns for optical media
JP4728726B2 (ja) 2005-07-25 2011-07-20 株式会社東芝 半導体記憶装置
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP4199781B2 (ja) * 2006-04-12 2008-12-17 シャープ株式会社 不揮発性半導体記憶装置
JP4354498B2 (ja) * 2007-03-30 2009-10-28 Ｏｋｉセミコンダクタ株式会社 半導体メモリ装置の製造方法及び半導体メモリ装置の再生方法及び半導体メモリ装置の再出荷方法
KR100888847B1 (ko) 2007-06-28 2009-03-17 삼성전자주식회사 불휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
JP2010021170A (ja) 2008-07-08 2010-01-28 Hitachi Ltd 半導体装置およびその製造方法
TWI569454B (zh) 2008-09-01 2017-02-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR101631454B1 (ko) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
CN101740631B (zh) 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
TWI467663B (zh) 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
TWI476915B (zh) 2008-12-25 2015-03-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102473734B (zh) 2009-07-31 2015-08-12 株式会社半导体能源研究所 半导体装置及其制造方法
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5663231B2 (ja) 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027664A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
CN102484140B (zh) 2009-09-04 2015-04-22 株式会社半导体能源研究所 半导体器件的制造方法
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR102293198B1 (ko) 2009-09-16 2021-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5537366B2 (ja) 2009-10-01 2014-07-02 株式会社半導体エネルギー研究所 半導体装置の駆動方法
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
KR101865546B1 (ko) 2009-10-16 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
KR101988819B1 (ko) 2009-10-16 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 이를 구비한 전자 장치
KR101772639B1 (ko) 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011046025A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR102005736B1 (ko) 2009-10-16 2019-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5730529B2 (ja) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
KR102377866B1 (ko) 2009-10-21 2022-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
CN104485336B (zh) 2009-10-21 2018-01-02 株式会社半导体能源研究所 半导体器件
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011052385A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102612741B (zh) 2009-11-06 2014-11-12 株式会社半导体能源研究所 半导体装置
WO2011062058A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101911382B1 (ko) 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
WO2011102203A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device using the same
JP5740169B2 (ja) 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
KR102081035B1 (ko) 2010-02-19 2020-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4838399B2 (ja) * 2010-03-30 2011-12-14 パナソニック株式会社 不揮発性記憶装置及び不揮発性記憶装置への書き込み方法
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
KR20120000499A (ko) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI545587B (zh) 2010-08-06 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及驅動半導體裝置的方法
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
KR102115344B1 (ko) * 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
JP2012079399A (ja) 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI556317B (zh) 2010-10-07 2016-11-01 半導體能源研究所股份有限公司 薄膜元件、半導體裝置以及它們的製造方法
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
KR20200052993A (ko) 2010-12-03 2020-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
JP6030298B2 (ja) * 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8922464B2 (en) * 2011-05-11 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device and driving method thereof
DE112012004076T5 (de) 2011-09-29 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
CN106847929B (zh) 2011-09-29 2020-06-23 株式会社半导体能源研究所 半导体装置
KR20140074384A (ko) 2011-10-14 2014-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130040706A (ko) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6082562B2 (ja) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103137701B (zh) 2011-11-30 2018-01-19 株式会社半导体能源研究所 晶体管及半导体装置
US8860023B2 (en) 2012-05-01 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6228753B2 (ja) * 2012-06-01 2017-11-08 株式会社半導体エネルギー研究所 半導体装置、表示装置、表示モジュール、及び電子機器
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
KR102072099B1 (ko) 2012-11-08 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 막 및 금속 산화물 막의 형성 방법
KR102211596B1 (ko) 2012-12-28 2021-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
TWI618081B (zh) 2013-05-30 2018-03-11 半導體能源研究所股份有限公司 半導體裝置的驅動方法
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR102304824B1 (ko) 2013-08-09 2021-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097586A1 (en) 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9817040B2 (en) 2014-02-21 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measuring method of low off-state current of transistor
KR102437450B1 (ko) 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치를 포함하는 전자 기기
US10559667B2 (en) 2014-08-25 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for measuring current of semiconductor device
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954097A (ja) * 1982-09-22 1984-03-28 Hitachi Ltd 半導体メモリ装置
US4638460A (en) * 1982-09-22 1987-01-20 Hitachi, Ltd. Semiconductor memory device
JP2000339977A (ja) * 1999-05-28 2000-12-08 Nec Corp データ設定方法および装置、データ記憶装置、情報記憶媒体
US6285592B1 (en) * 1999-05-28 2001-09-04 Nec Corporation Data storage device having superior data retention characteristic and method
JP2007193862A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 不揮発性半導体記憶装置
US20070183208A1 (en) * 2006-01-17 2007-08-09 Masayuki Tanaka Nonvolatile semiconductor memory device and data writing method therefor
US20110116310A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2011123986A (ja) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP2011176294A (ja) * 2010-01-29 2011-09-08 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US20110286290A1 (en) * 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
JP2012003832A (ja) * 2010-05-20 2012-01-05 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US20120099368A1 (en) * 2010-10-20 2012-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP2013008431A (ja) * 2010-10-20 2013-01-10 Semiconductor Energy Lab Co Ltd 記憶素子の駆動方法及び半導体装置の駆動方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019130144A1 (ja) * 2017-12-27 2019-07-04 株式会社半導体エネルギー研究所 記憶装置
US11158371B2 (en) 2017-12-27 2021-10-26 Semiconductor Energy Laboratory Co., Ltd. Memory device

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