JP2016139123A - オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 - Google Patents

オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 Download PDF

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Publication number
JP2016139123A
JP2016139123A JP2015243934A JP2015243934A JP2016139123A JP 2016139123 A JP2016139123 A JP 2016139123A JP 2015243934 A JP2015243934 A JP 2015243934A JP 2015243934 A JP2015243934 A JP 2015243934A JP 2016139123 A JP2016139123 A JP 2016139123A
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JP
Japan
Prior art keywords
coating composition
photoresist
optionally substituted
layer
surface energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015243934A
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English (en)
Japanese (ja)
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JP2016139123A5 (enExample
Inventor
ソン−ジョン・リー
Sun-Jung Lee
ジフン・カン
Jihoon Kang
ドン−ジェ・ホン
Dong-Je Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Specialty Materials Korea Ltd
Original Assignee
Rohm and Haas Electronic Materials Korea Ltd
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Publication date
Application filed by Rohm and Haas Electronic Materials Korea Ltd filed Critical Rohm and Haas Electronic Materials Korea Ltd
Publication of JP2016139123A publication Critical patent/JP2016139123A/ja
Publication of JP2016139123A5 publication Critical patent/JP2016139123A5/ja
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • AHUMAN NECESSITIES
    • A41WEARING APPAREL
    • A41DOUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D15/00Convertible garments
    • A41D15/04Garments convertible into other articles
    • AHUMAN NECESSITIES
    • A41WEARING APPAREL
    • A41DOUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D27/00Details of garments or of their making
    • A41D27/22Loops or hooks for hanging-up
    • AHUMAN NECESSITIES
    • A41WEARING APPAREL
    • A41DOUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D3/00Overgarments
    • A41D3/02Overcoats
    • A41D3/04Raincoats
    • AHUMAN NECESSITIES
    • A45HAND OR TRAVELLING ARTICLES
    • A45FTRAVELLING OR CAMP EQUIPMENT: SACKS OR PACKS CARRIED ON THE BODY
    • A45F4/00Travelling or camp articles which may be converted into other articles or into objects for other use; Sacks or packs carried on the body and convertible into other articles or into objects for other use
    • AHUMAN NECESSITIES
    • A45HAND OR TRAVELLING ARTICLES
    • A45FTRAVELLING OR CAMP EQUIPMENT: SACKS OR PACKS CARRIED ON THE BODY
    • A45F4/00Travelling or camp articles which may be converted into other articles or into objects for other use; Sacks or packs carried on the body and convertible into other articles or into objects for other use
    • A45F4/14Coats or capes convertible into tent coverings
    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47GHOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/06Travelling rugs; Sleeping rugs
    • A47G9/062Travelling rugs; Sleeping rugs for covering the ground, e.g. picnic or beach blankets
    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47GHOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/08Sleeping bags
    • A47G9/086Sleeping bags for outdoor sleeping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/325Non-aqueous compositions
    • AHUMAN NECESSITIES
    • A41WEARING APPAREL
    • A41DOUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D2300/00Details of garments
    • A41D2300/30Closures
    • A41D2300/324Closures using snap fasteners
    • AHUMAN NECESSITIES
    • A41WEARING APPAREL
    • A41DOUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D2300/00Details of garments
    • A41D2300/30Closures
    • A41D2300/33Closures using straps or ties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laminated Bodies (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Paints Or Removers (AREA)
JP2015243934A 2014-12-30 2015-12-15 オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 Pending JP2016139123A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462097667P 2014-12-30 2014-12-30
US62/097,667 2014-12-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018146000A Division JP6788639B2 (ja) 2014-12-30 2018-08-02 オーバーコートされたフォトレジストと共に使用するためのコーティング組成物

Publications (2)

Publication Number Publication Date
JP2016139123A true JP2016139123A (ja) 2016-08-04
JP2016139123A5 JP2016139123A5 (enExample) 2017-06-01

Family

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JP2015243934A Pending JP2016139123A (ja) 2014-12-30 2015-12-15 オーバーコートされたフォトレジストと共に使用するためのコーティング組成物
JP2018146000A Active JP6788639B2 (ja) 2014-12-30 2018-08-02 オーバーコートされたフォトレジストと共に使用するためのコーティング組成物

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Country Status (5)

Country Link
US (1) US11762292B2 (enExample)
JP (2) JP2016139123A (enExample)
KR (2) KR102110178B1 (enExample)
CN (1) CN105739236B (enExample)
TW (1) TWI592760B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066477A1 (ja) * 2018-09-27 2020-04-02 富士フイルム株式会社 パターン形成方法、及び、有機溶剤現像用レジスト積層体

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
US20180364575A1 (en) * 2017-06-15 2018-12-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
US12393118B2 (en) * 2021-05-28 2025-08-19 Dupont Electronic Materials International, Llc Composition for photoresist underlayer

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003015307A (ja) * 2001-06-29 2003-01-17 Fuji Photo Film Co Ltd 感光性平版印刷版
JP2003177547A (ja) * 2001-09-26 2003-06-27 Shipley Co Llc 上塗りされたフォトレジストとともに使用されるコーティング組成物
JP2005352110A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2007017970A (ja) * 2005-07-05 2007-01-25 Rohm & Haas Electronic Materials Llc オーバーコートされるフォトレジストと共に用いるためのコーティング組成物
JP2007079550A (ja) * 2005-08-19 2007-03-29 Jsr Corp 樹脂組成物、それを用いた二層積層膜、およびバンプ形成方法
WO2008026468A1 (fr) * 2006-08-28 2008-03-06 Nissan Chemical Industries, Ltd. Composition servant à créer une sous-couche de réserve et contenant un additif liquide
JP2009527021A (ja) * 2006-02-13 2009-07-23 ダウ・コーニング・コーポレイション 反射防止膜材料
JP2009251130A (ja) * 2008-04-02 2009-10-29 Jsr Corp レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法
JP2012194216A (ja) * 2011-03-15 2012-10-11 Shin Etsu Chem Co Ltd パターン形成方法及びこれに用いるケイ素含有膜形成用組成物
JP2014024831A (ja) * 2012-06-18 2014-02-06 Shin Etsu Chem Co Ltd 有機膜形成用化合物、これを用いた有機膜材料、有機膜形成方法、パターン形成方法
WO2014069329A1 (ja) * 2012-10-31 2014-05-08 日産化学工業株式会社 エステル基を有するシリコン含有レジスト下層膜形成組成物
WO2014097993A1 (ja) * 2012-12-18 2014-06-26 日産化学工業株式会社 多環芳香族ビニル化合物を含む自己組織化膜の下層膜形成組成物

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2123702C3 (de) * 1971-05-13 1988-05-26 Hoechst Ag, 6230 Frankfurt Verfahren zur Herstellung eines Reliefbildes
DE3209327A1 (de) * 1982-03-15 1983-09-15 Cassella Ag, 6000 Frankfurt Verfahren zur herstellung von aetzreservedrucken auf hydrophoben textilmaterialien
DE3236560A1 (de) * 1982-10-02 1984-04-05 Hoechst Ag, 6230 Frankfurt Lichtempfindliches schichtuebertragungsmaterial und verfahren zur herstellung einer photoresistschablone
US5232813A (en) * 1990-01-31 1993-08-03 Fuji Photo Film Co., Ltd. Ps plate for use in making lithographic printing plate requiring no dampening water utilizing irradiation cured primer layer containing polyurethane resin and diazonium salt polycondensate photopolymerizable light-sensitive layer and silicone rubber layer
US5994031A (en) * 1996-09-09 1999-11-30 Konica Corporation Method of processing presensitized planographic printing plate
WO2000016988A1 (en) * 1998-09-21 2000-03-30 R/H Consulting, Inc. Lithographic printing plates for use with laser imaging apparatus
US20020015917A1 (en) * 1998-12-31 2002-02-07 Lee Geun Su Multi-oxygen containing compound for preventing acid diffusion, and photoresist composition containing the same
KR100498440B1 (ko) * 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
US7258956B2 (en) * 2000-07-06 2007-08-21 Cabot Corporation Printing plates comprising modified pigment products
JP4654544B2 (ja) * 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
AU2001292783A1 (en) * 2000-09-19 2002-04-02 Shipley Company, L.L.C. Antireflective composition
US6787286B2 (en) * 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
US7332266B2 (en) * 2001-04-10 2008-02-19 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating for use in lithography
JP4373082B2 (ja) * 2001-12-28 2009-11-25 富士通株式会社 アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
US7078157B2 (en) * 2003-02-27 2006-07-18 Az Electronic Materials Usa Corp. Photosensitive composition and use thereof
US6811964B2 (en) * 2003-03-26 2004-11-02 Fuji Photo Film Co., Ltd. Method and apparatus for producing coating liquid for photothermographic material
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US20060108710A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Method to reduce adhesion between a conformable region and a mold
KR100740824B1 (ko) * 2003-07-16 2007-07-19 도오꾜오까고오교 가부시끼가이샤 포지티브 포토레지스트 조성물 및 레지스트 패턴 형성 방법
TWI360726B (en) * 2003-10-30 2012-03-21 Nissan Chemical Ind Ltd Sublayer coating-forming composition containing de
JP4485241B2 (ja) * 2004-04-09 2010-06-16 Azエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物およびそれを用いたパターン形成方法
JP2005326491A (ja) * 2004-05-12 2005-11-24 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US20060057491A1 (en) * 2004-05-18 2006-03-16 Rohm And Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
CN100541327C (zh) * 2004-05-21 2009-09-16 明德国际仓储贸易(上海)有限公司 液晶显示元件散乱层光阻组成物
EP1602982B1 (en) * 2004-05-31 2013-12-18 FUJIFILM Corporation Planographic printing method
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP4553835B2 (ja) * 2005-12-14 2010-09-29 信越化学工業株式会社 反射防止膜材料、及びこれを用いたパターン形成方法、基板
JP4409524B2 (ja) * 2006-03-28 2010-02-03 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
KR100852706B1 (ko) * 2007-03-02 2008-08-19 삼성에스디아이 주식회사 격벽 형성용 조성물, 및 이를 이용하여 제조된 플라즈마디스플레이 패널
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
WO2009034998A1 (ja) * 2007-09-11 2009-03-19 Nissan Chemical Industries, Ltd. 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物
JP5337983B2 (ja) * 2007-09-19 2013-11-06 日産化学工業株式会社 多環式脂肪族環を有するポリマーを含むリソグラフィー用レジスト下層膜形成組成物
US8173346B2 (en) * 2008-05-28 2012-05-08 Presstek, Inc. Printing members having permeability-transition layers and related methods
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US8501383B2 (en) * 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
KR101764259B1 (ko) * 2009-06-02 2017-08-03 닛산 가가쿠 고교 가부시키 가이샤 설파이드 결합을 갖는 실리콘 함유 레지스트 하층막 형성 조성물
US8507192B2 (en) * 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
JP2012022191A (ja) * 2010-07-15 2012-02-02 Nissan Chem Ind Ltd イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP5890990B2 (ja) * 2010-11-01 2016-03-22 株式会社キーエンス インクジェット光造形法における、光造形品形成用モデル材、光造形品の光造形時の形状支持用サポート材および光造形品の製造方法
KR101910682B1 (ko) * 2011-04-25 2018-10-22 에이지씨 가부시키가이샤 발수발유제 조성물, 그 제조 방법 및 물품
WO2012147210A1 (ja) * 2011-04-28 2012-11-01 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
US9240327B2 (en) * 2011-08-04 2016-01-19 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition for EUV lithography containing condensation polymer
JP5882776B2 (ja) * 2012-02-14 2016-03-09 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
WO2014167671A1 (ja) * 2013-04-10 2014-10-16 千代田ケミカル株式会社 感光性樹脂組成物
KR101674989B1 (ko) * 2013-05-21 2016-11-22 제일모직 주식회사 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR102255221B1 (ko) * 2013-12-27 2021-05-24 롬엔드하스전자재료코리아유한회사 나노리소그래피용 유기 바닥 반사방지 코팅 조성물
JP6569204B2 (ja) * 2014-10-08 2019-09-04 大日本印刷株式会社 積層体の製造方法および積層体
US11092894B2 (en) * 2014-12-31 2021-08-17 Rohm And Haas Electronic Materials Korea Ltd. Method for forming pattern using anti-reflective coating composition comprising photoacid generator
US9499698B2 (en) * 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003015307A (ja) * 2001-06-29 2003-01-17 Fuji Photo Film Co Ltd 感光性平版印刷版
JP2003177547A (ja) * 2001-09-26 2003-06-27 Shipley Co Llc 上塗りされたフォトレジストとともに使用されるコーティング組成物
JP2005352110A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2007017970A (ja) * 2005-07-05 2007-01-25 Rohm & Haas Electronic Materials Llc オーバーコートされるフォトレジストと共に用いるためのコーティング組成物
JP2007079550A (ja) * 2005-08-19 2007-03-29 Jsr Corp 樹脂組成物、それを用いた二層積層膜、およびバンプ形成方法
JP2009527021A (ja) * 2006-02-13 2009-07-23 ダウ・コーニング・コーポレイション 反射防止膜材料
WO2008026468A1 (fr) * 2006-08-28 2008-03-06 Nissan Chemical Industries, Ltd. Composition servant à créer une sous-couche de réserve et contenant un additif liquide
JP2009251130A (ja) * 2008-04-02 2009-10-29 Jsr Corp レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法
JP2012194216A (ja) * 2011-03-15 2012-10-11 Shin Etsu Chem Co Ltd パターン形成方法及びこれに用いるケイ素含有膜形成用組成物
JP2014024831A (ja) * 2012-06-18 2014-02-06 Shin Etsu Chem Co Ltd 有機膜形成用化合物、これを用いた有機膜材料、有機膜形成方法、パターン形成方法
WO2014069329A1 (ja) * 2012-10-31 2014-05-08 日産化学工業株式会社 エステル基を有するシリコン含有レジスト下層膜形成組成物
WO2014097993A1 (ja) * 2012-12-18 2014-06-26 日産化学工業株式会社 多環芳香族ビニル化合物を含む自己組織化膜の下層膜形成組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066477A1 (ja) * 2018-09-27 2020-04-02 富士フイルム株式会社 パターン形成方法、及び、有機溶剤現像用レジスト積層体

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KR20180006474A (ko) 2018-01-17
US20160187778A1 (en) 2016-06-30
KR20160082470A (ko) 2016-07-08
JP6788639B2 (ja) 2020-11-25
TW201626109A (zh) 2016-07-16
US11762292B2 (en) 2023-09-19
KR102110178B1 (ko) 2020-05-13
JP2019003200A (ja) 2019-01-10
CN105739236A (zh) 2016-07-06
TWI592760B (zh) 2017-07-21

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