KR102110178B1 - 오버코팅된 포토레지스트와 함께 이용하기 위한 조성물 - Google Patents

오버코팅된 포토레지스트와 함께 이용하기 위한 조성물 Download PDF

Info

Publication number
KR102110178B1
KR102110178B1 KR1020150187001A KR20150187001A KR102110178B1 KR 102110178 B1 KR102110178 B1 KR 102110178B1 KR 1020150187001 A KR1020150187001 A KR 1020150187001A KR 20150187001 A KR20150187001 A KR 20150187001A KR 102110178 B1 KR102110178 B1 KR 102110178B1
Authority
KR
South Korea
Prior art keywords
layer
coating composition
photoresist
optionally substituted
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150187001A
Other languages
English (en)
Korean (ko)
Other versions
KR20160082470A (ko
Inventor
이선정
강지훈
홍동제
Original Assignee
롬엔드하스전자재료코리아유한회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬엔드하스전자재료코리아유한회사 filed Critical 롬엔드하스전자재료코리아유한회사
Publication of KR20160082470A publication Critical patent/KR20160082470A/ko
Application granted granted Critical
Publication of KR102110178B1 publication Critical patent/KR102110178B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D15/00—Convertible garments
    • A41D15/04—Garments convertible into other articles
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D27/00—Details of garments or of their making
    • A41D27/22—Loops or hooks for hanging-up
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D3/00—Overgarments
    • A41D3/02—Overcoats
    • A41D3/04—Raincoats
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45F—TRAVELLING OR CAMP EQUIPMENT: SACKS OR PACKS CARRIED ON THE BODY
    • A45F4/00—Travelling or camp articles which may be converted into other articles or into objects for other use; Sacks or packs carried on the body and convertible into other articles or into objects for other use
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45F—TRAVELLING OR CAMP EQUIPMENT: SACKS OR PACKS CARRIED ON THE BODY
    • A45F4/00—Travelling or camp articles which may be converted into other articles or into objects for other use; Sacks or packs carried on the body and convertible into other articles or into objects for other use
    • A45F4/14—Coats or capes convertible into tent coverings
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00—Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/06—Travelling rugs; Sleeping rugs
    • A47G9/062—Travelling rugs; Sleeping rugs for covering the ground, e.g. picnic or beach blankets
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00—Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/08—Sleeping bags
    • A47G9/086—Sleeping bags for outdoor sleeping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D2300/00—Details of garments
    • A41D2300/30—Closures
    • A41D2300/324—Closures using snap fasteners
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D2300/00—Details of garments
    • A41D2300/30—Closures
    • A41D2300/33—Closures using straps or ties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
KR1020150187001A 2014-12-30 2015-12-26 오버코팅된 포토레지스트와 함께 이용하기 위한 조성물 Active KR102110178B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462097667P 2014-12-30 2014-12-30
US62/097,667 2014-12-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180002165A Division KR20180006474A (ko) 2014-12-30 2018-01-08 오버코팅된 포토레지스트와 함께 이용하기 위한 조성물

Publications (2)

Publication Number Publication Date
KR20160082470A KR20160082470A (ko) 2016-07-08
KR102110178B1 true KR102110178B1 (ko) 2020-05-13

Family

ID=56163995

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020150187001A Active KR102110178B1 (ko) 2014-12-30 2015-12-26 오버코팅된 포토레지스트와 함께 이용하기 위한 조성물
KR1020180002165A Withdrawn KR20180006474A (ko) 2014-12-30 2018-01-08 오버코팅된 포토레지스트와 함께 이용하기 위한 조성물

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020180002165A Withdrawn KR20180006474A (ko) 2014-12-30 2018-01-08 오버코팅된 포토레지스트와 함께 이용하기 위한 조성물

Country Status (5)

Country Link
US (1) US11762292B2 (enExample)
JP (2) JP2016139123A (enExample)
KR (2) KR102110178B1 (enExample)
CN (1) CN105739236B (enExample)
TW (1) TWI592760B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
US20180364575A1 (en) * 2017-06-15 2018-12-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
JPWO2020066477A1 (ja) * 2018-09-27 2021-05-20 富士フイルム株式会社 パターン形成方法、及び、有機溶剤現像用レジスト積層体
US12393118B2 (en) * 2021-05-28 2025-08-19 Dupont Electronic Materials International, Llc Composition for photoresist underlayer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005352110A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2012022191A (ja) * 2010-07-15 2012-02-02 Nissan Chem Ind Ltd イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2123702C3 (de) * 1971-05-13 1988-05-26 Hoechst Ag, 6230 Frankfurt Verfahren zur Herstellung eines Reliefbildes
DE3209327A1 (de) * 1982-03-15 1983-09-15 Cassella Ag, 6000 Frankfurt Verfahren zur herstellung von aetzreservedrucken auf hydrophoben textilmaterialien
DE3236560A1 (de) * 1982-10-02 1984-04-05 Hoechst Ag, 6230 Frankfurt Lichtempfindliches schichtuebertragungsmaterial und verfahren zur herstellung einer photoresistschablone
US5232813A (en) * 1990-01-31 1993-08-03 Fuji Photo Film Co., Ltd. Ps plate for use in making lithographic printing plate requiring no dampening water utilizing irradiation cured primer layer containing polyurethane resin and diazonium salt polycondensate photopolymerizable light-sensitive layer and silicone rubber layer
US5994031A (en) * 1996-09-09 1999-11-30 Konica Corporation Method of processing presensitized planographic printing plate
WO2000016988A1 (en) * 1998-09-21 2000-03-30 R/H Consulting, Inc. Lithographic printing plates for use with laser imaging apparatus
US20020015917A1 (en) * 1998-12-31 2002-02-07 Lee Geun Su Multi-oxygen containing compound for preventing acid diffusion, and photoresist composition containing the same
KR100498440B1 (ko) * 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
US7258956B2 (en) * 2000-07-06 2007-08-21 Cabot Corporation Printing plates comprising modified pigment products
JP4654544B2 (ja) * 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
AU2001292783A1 (en) * 2000-09-19 2002-04-02 Shipley Company, L.L.C. Antireflective composition
US6787286B2 (en) * 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
US7332266B2 (en) * 2001-04-10 2008-02-19 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating for use in lithography
JP4401600B2 (ja) * 2001-06-29 2010-01-20 富士フイルム株式会社 感光性平版印刷版
TW591341B (en) 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
JP4373082B2 (ja) * 2001-12-28 2009-11-25 富士通株式会社 アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
US7078157B2 (en) * 2003-02-27 2006-07-18 Az Electronic Materials Usa Corp. Photosensitive composition and use thereof
US6811964B2 (en) * 2003-03-26 2004-11-02 Fuji Photo Film Co., Ltd. Method and apparatus for producing coating liquid for photothermographic material
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US20060108710A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Method to reduce adhesion between a conformable region and a mold
KR100740824B1 (ko) * 2003-07-16 2007-07-19 도오꾜오까고오교 가부시끼가이샤 포지티브 포토레지스트 조성물 및 레지스트 패턴 형성 방법
TWI360726B (en) * 2003-10-30 2012-03-21 Nissan Chemical Ind Ltd Sublayer coating-forming composition containing de
JP4485241B2 (ja) * 2004-04-09 2010-06-16 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物およびそれを用いたパターン形成方法
JP2005326491A (ja) * 2004-05-12 2005-11-24 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US20060057491A1 (en) * 2004-05-18 2006-03-16 Rohm And Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
CN100541327C (zh) * 2004-05-21 2009-09-16 明德国际仓储贸易(上海)有限公司 液晶显示元件散乱层光阻组成物
EP1602982B1 (en) * 2004-05-31 2013-12-18 FUJIFILM Corporation Planographic printing method
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
EP1742108B1 (en) * 2005-07-05 2015-10-28 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
JP4654993B2 (ja) * 2005-08-19 2011-03-23 Ｊｓｒ株式会社 樹脂組成物、それを用いた二層積層膜、およびバンプ形成方法
JP4553835B2 (ja) * 2005-12-14 2010-09-29 信越化学工業株式会社 反射防止膜材料、及びこれを用いたパターン形成方法、基板
EP1989593A2 (en) * 2006-02-13 2008-11-12 Dow Corning Corporation Antireflective coating material
JP4409524B2 (ja) * 2006-03-28 2010-02-03 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
KR101423057B1 (ko) * 2006-08-28 2014-07-25 닛산 가가쿠 고교 가부시키 가이샤 액상첨가제를 포함하는 레지스트 하층막 형성 조성물
KR100852706B1 (ko) * 2007-03-02 2008-08-19 삼성에스디아이 주식회사 격벽 형성용 조성물, 및 이를 이용하여 제조된 플라즈마디스플레이 패널
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
WO2009034998A1 (ja) * 2007-09-11 2009-03-19 Nissan Chemical Industries, Ltd. 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物
JP5337983B2 (ja) * 2007-09-19 2013-11-06 日産化学工業株式会社 多環式脂肪族環を有するポリマーを含むリソグラフィー用レジスト下層膜形成組成物
JP5077026B2 (ja) * 2008-04-02 2012-11-21 Ｊｓｒ株式会社 レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法
US8173346B2 (en) * 2008-05-28 2012-05-08 Presstek, Inc. Printing members having permeability-transition layers and related methods
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US8501383B2 (en) * 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
KR101764259B1 (ko) * 2009-06-02 2017-08-03 닛산 가가쿠 고교 가부시키 가이샤 설파이드 결합을 갖는 실리콘 함유 레지스트 하층막 형성 조성물
US8507192B2 (en) * 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
JP5890990B2 (ja) * 2010-11-01 2016-03-22 株式会社キーエンス インクジェット光造形法における、光造形品形成用モデル材、光造形品の光造形時の形状支持用サポート材および光造形品の製造方法
JP5518772B2 (ja) * 2011-03-15 2014-06-11 信越化学工業株式会社 パターン形成方法
KR101910682B1 (ko) * 2011-04-25 2018-10-22 에이지씨 가부시키가이샤 발수발유제 조성물, 그 제조 방법 및 물품
WO2012147210A1 (ja) * 2011-04-28 2012-11-01 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
US9240327B2 (en) * 2011-08-04 2016-01-19 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition for EUV lithography containing condensation polymer
JP5882776B2 (ja) * 2012-02-14 2016-03-09 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP5894106B2 (ja) * 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
KR102307208B1 (ko) * 2012-10-31 2021-10-01 닛산 가가쿠 가부시키가이샤 에스테르기를 갖는 실리콘함유 레지스트 하층막 형성조성물
US10508181B2 (en) * 2012-12-18 2019-12-17 Nissan Chemical Industries, Ltd. Bottom layer film-formation composition of self-organizing film containing polycyclic organic vinyl compound
WO2014167671A1 (ja) * 2013-04-10 2014-10-16 千代田ケミカル株式会社 感光性樹脂組成物
KR101674989B1 (ko) * 2013-05-21 2016-11-22 제일모직 주식회사 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR102255221B1 (ko) * 2013-12-27 2021-05-24 롬엔드하스전자재료코리아유한회사 나노리소그래피용 유기 바닥 반사방지 코팅 조성물
JP6569204B2 (ja) * 2014-10-08 2019-09-04 大日本印刷株式会社 積層体の製造方法および積層体
US11092894B2 (en) * 2014-12-31 2021-08-17 Rohm And Haas Electronic Materials Korea Ltd. Method for forming pattern using anti-reflective coating composition comprising photoacid generator
US9499698B2 (en) * 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005352110A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2012022191A (ja) * 2010-07-15 2012-02-02 Nissan Chem Ind Ltd イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Also Published As

Publication number Publication date
CN105739236B (zh) 2022-07-19
KR20180006474A (ko) 2018-01-17
US20160187778A1 (en) 2016-06-30
KR20160082470A (ko) 2016-07-08
JP6788639B2 (ja) 2020-11-25
TW201626109A (zh) 2016-07-16
US11762292B2 (en) 2023-09-19
JP2019003200A (ja) 2019-01-10
JP2016139123A (ja) 2016-08-04
CN105739236A (zh) 2016-07-06
TWI592760B (zh) 2017-07-21

Similar Documents

Publication Publication Date Title
KR102152674B1 (ko) 저온 적용을 위한 이온성 열산 발생제
JP6751454B2 (ja) オーバーコートされたフォトレジストと共に使用するためのコーティング組成物
KR102151958B1 (ko) 열산 발생제를 갖는 반사방지 조성물
KR102019688B1 (ko) 이온성 화합물을 포함하는 포토레지스트
KR102183782B1 (ko) 포토레지스트와 함께 사용하기 위한 코팅 조성물
KR102110178B1 (ko) 오버코팅된 포토레지스트와 함께 이용하기 위한 조성물
TWI660245B (zh) 與外塗佈光致抗蝕劑一起使用的塗料組合物
KR102355665B1 (ko) 오버코팅된 포토레지스트와 함께 사용하기 위한 코팅 조성물
CN109143783B (zh) 与外涂布光致抗蚀剂一起使用的涂料组合物

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20151226

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160223

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20151226

Comment text: Patent Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20161214

Patent event code: PE09021S01D

AMND Amendment
PE0601 Decision on rejection of patent

Patent event date: 20170731

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20161214

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20170731

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20170314

Comment text: Amendment to Specification, etc.

PX0601 Decision of rejection after re-examination

Comment text: Decision to Refuse Application

Patent event code: PX06014S01D

Patent event date: 20171108

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20170926

Comment text: Decision to Refuse Application

Patent event code: PX06011S01I

Patent event date: 20170731

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20170314

Comment text: Notification of reason for refusal

Patent event code: PX06013S01I

Patent event date: 20161214

A107 Divisional application of patent
J201 Request for trial against refusal decision
PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20180108

Patent event code: PA01071R01D

PJ0201 Trial against decision of rejection

Patent event date: 20180108

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20171108

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Patent event date: 20170731

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20190822

Appeal identifier: 2018101000085

Request date: 20180108

J301 Trial decision

Free format text: TRIAL NUMBER: 2018101000085; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20180108

Effective date: 20190822

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20190822

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20180108

Decision date: 20190822

Appeal identifier: 2018101000085

PS0901 Examination by remand of revocation
S901 Examination by remand of revocation
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20190917

Patent event code: PE09021S01D

GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

Patent event date: 20200213

Patent event code: PS07012S01D

Comment text: Decision to Grant Registration

Patent event date: 20190823

Patent event code: PS07011S01I

Comment text: Notice of Trial Decision (Remand of Revocation)

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20200507

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20200507

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20230418

Start annual number: 4

End annual number: 4