CN105739236B - 与经外涂布的光致抗蚀剂一起使用的涂层组合物 - Google Patents

与经外涂布的光致抗蚀剂一起使用的涂层组合物 Download PDF

Info

Publication number
CN105739236B
CN105739236B CN201510980497.2A CN201510980497A CN105739236B CN 105739236 B CN105739236 B CN 105739236B CN 201510980497 A CN201510980497 A CN 201510980497A CN 105739236 B CN105739236 B CN 105739236B
Authority
CN
China
Prior art keywords
polymer
photoresist
coating composition
coating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510980497.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN105739236A (zh
Inventor
S-J·李
J·姜
D-J·洪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Specialty Materials Korea Ltd
Original Assignee
Rohm and Haas Electronic Materials Korea Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials Korea Ltd filed Critical Rohm and Haas Electronic Materials Korea Ltd
Publication of CN105739236A publication Critical patent/CN105739236A/zh
Application granted granted Critical
Publication of CN105739236B publication Critical patent/CN105739236B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D15/00—Convertible garments
    • A41D15/04—Garments convertible into other articles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D27/00—Details of garments or of their making
    • A41D27/22—Loops or hooks for hanging-up
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D3/00—Overgarments
    • A41D3/02—Overcoats
    • A41D3/04—Raincoats
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45F—TRAVELLING OR CAMP EQUIPMENT: SACKS OR PACKS CARRIED ON THE BODY
    • A45F4/00—Travelling or camp articles which may be converted into other articles or into objects for other use; Sacks or packs carried on the body and convertible into other articles or into objects for other use
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45F—TRAVELLING OR CAMP EQUIPMENT: SACKS OR PACKS CARRIED ON THE BODY
    • A45F4/00—Travelling or camp articles which may be converted into other articles or into objects for other use; Sacks or packs carried on the body and convertible into other articles or into objects for other use
    • A45F4/14—Coats or capes convertible into tent coverings
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00—Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/06—Travelling rugs; Sleeping rugs
    • A47G9/062—Travelling rugs; Sleeping rugs for covering the ground, e.g. picnic or beach blankets
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00—Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/08—Sleeping bags
    • A47G9/086—Sleeping bags for outdoor sleeping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D2300/00—Details of garments
    • A41D2300/30—Closures
    • A41D2300/324—Closures using snap fasteners
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D2300/00—Details of garments
    • A41D2300/30—Closures
    • A41D2300/33—Closures using straps or ties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
CN201510980497.2A 2014-12-30 2015-12-23 与经外涂布的光致抗蚀剂一起使用的涂层组合物 Active CN105739236B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462097667P 2014-12-30 2014-12-30
US62/097667 2014-12-30

Publications (2)

Publication Number Publication Date
CN105739236A CN105739236A (zh) 2016-07-06
CN105739236B true CN105739236B (zh) 2022-07-19

Family

ID=56163995

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510980497.2A Active CN105739236B (zh) 2014-12-30 2015-12-23 与经外涂布的光致抗蚀剂一起使用的涂层组合物

Country Status (5)

Country Link
US (1) US11762292B2 (enExample)
JP (2) JP2016139123A (enExample)
KR (2) KR102110178B1 (enExample)
CN (1) CN105739236B (enExample)
TW (1) TWI592760B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10203602B2 (en) 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
US20180364575A1 (en) * 2017-06-15 2018-12-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
KR20210045444A (ko) * 2018-09-27 2021-04-26 후지필름 가부시키가이샤 패턴 형성 방법, 및 유기 용제 현상용 레지스트 적층체
US12393118B2 (en) * 2021-05-28 2025-08-19 Dupont Electronic Materials International, Llc Composition for photoresist underlayer

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2123702C3 (de) * 1971-05-13 1988-05-26 Hoechst Ag, 6230 Frankfurt Verfahren zur Herstellung eines Reliefbildes
DE3209327A1 (de) * 1982-03-15 1983-09-15 Cassella Ag, 6000 Frankfurt Verfahren zur herstellung von aetzreservedrucken auf hydrophoben textilmaterialien
DE3236560A1 (de) * 1982-10-02 1984-04-05 Hoechst Ag, 6230 Frankfurt Lichtempfindliches schichtuebertragungsmaterial und verfahren zur herstellung einer photoresistschablone
US5232813A (en) * 1990-01-31 1993-08-03 Fuji Photo Film Co., Ltd. Ps plate for use in making lithographic printing plate requiring no dampening water utilizing irradiation cured primer layer containing polyurethane resin and diazonium salt polycondensate photopolymerizable light-sensitive layer and silicone rubber layer
US5994031A (en) * 1996-09-09 1999-11-30 Konica Corporation Method of processing presensitized planographic printing plate
KR100343912B1 (ko) * 1998-09-21 2002-07-20 프레스텍, 인크. 레이져 화상 형성 장치에 사용하기 위한 리소그래픽 인쇄판
US20020015917A1 (en) * 1998-12-31 2002-02-07 Lee Geun Su Multi-oxygen containing compound for preventing acid diffusion, and photoresist composition containing the same
KR100498440B1 (ko) * 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
ATE495890T1 (de) * 2000-07-06 2011-02-15 Cabot Corp Druckplatten mit modifizierten pigmentprodukten
JP4654544B2 (ja) * 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
AU2001292783A1 (en) * 2000-09-19 2002-04-02 Shipley Company, L.L.C. Antireflective composition
US6787286B2 (en) * 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
TWI225187B (en) * 2001-04-10 2004-12-11 Nissan Chemical Ind Ltd Composite for forming anti-reflective film in lithography
JP4401600B2 (ja) * 2001-06-29 2010-01-20 富士フイルム株式会社 感光性平版印刷版
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
JP4373082B2 (ja) * 2001-12-28 2009-11-25 富士通株式会社 アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
US7078157B2 (en) * 2003-02-27 2006-07-18 Az Electronic Materials Usa Corp. Photosensitive composition and use thereof
US6811964B2 (en) * 2003-03-26 2004-11-02 Fuji Photo Film Co., Ltd. Method and apparatus for producing coating liquid for photothermographic material
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US20060108710A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Method to reduce adhesion between a conformable region and a mold
DE602004022677D1 (de) * 2003-07-16 2009-10-01 Tokyo Ohka Kogyo Co Ltd Positivphotoresistzusammensetzung und verfahren zur ausbildung einer resiststruktur
TWI360726B (en) * 2003-10-30 2012-03-21 Nissan Chemical Ind Ltd Sublayer coating-forming composition containing de
JP4485241B2 (ja) * 2004-04-09 2010-06-16 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物およびそれを用いたパターン形成方法
JP2005326491A (ja) * 2004-05-12 2005-11-24 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
EP1598702A1 (en) * 2004-05-18 2005-11-23 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
CN100541327C (zh) * 2004-05-21 2009-09-16 明德国际仓储贸易(上海)有限公司 液晶显示元件散乱层光阻组成物
EP2618215B1 (en) * 2004-05-31 2017-07-05 Fujifilm Corporation Method for producing a lithographic printing plate
JP4379596B2 (ja) * 2004-06-10 2009-12-09 信越化学工業株式会社 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
EP1742108B1 (en) * 2005-07-05 2015-10-28 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
JP4654993B2 (ja) * 2005-08-19 2011-03-23 Ｊｓｒ株式会社 樹脂組成物、それを用いた二層積層膜、およびバンプ形成方法
JP4553835B2 (ja) * 2005-12-14 2010-09-29 信越化学工業株式会社 反射防止膜材料、及びこれを用いたパターン形成方法、基板
WO2007094848A2 (en) * 2006-02-13 2007-08-23 Dow Corning Corporation Antireflective coating material
JP4409524B2 (ja) * 2006-03-28 2010-02-03 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
JP4784784B2 (ja) * 2006-08-28 2011-10-05 日産化学工業株式会社 液状添加剤を含むレジスト下層膜形成組成物
KR100852706B1 (ko) * 2007-03-02 2008-08-19 삼성에스디아이 주식회사 격벽 형성용 조성물, 및 이를 이용하여 제조된 플라즈마디스플레이 패널
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
US8426112B2 (en) * 2007-09-11 2013-04-23 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing polymer having nitrogen-containing silyl group
JP5337983B2 (ja) * 2007-09-19 2013-11-06 日産化学工業株式会社 多環式脂肪族環を有するポリマーを含むリソグラフィー用レジスト下層膜形成組成物
JP5077026B2 (ja) * 2008-04-02 2012-11-21 Ｊｓｒ株式会社 レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法
US8173346B2 (en) * 2008-05-28 2012-05-08 Presstek, Inc. Printing members having permeability-transition layers and related methods
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US8501383B2 (en) * 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
WO2010140551A1 (ja) * 2009-06-02 2010-12-09 日産化学工業株式会社 スルフィド結合を有するシリコン含有レジスト下層膜形成組成物
US8507192B2 (en) * 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
JP2012022191A (ja) * 2010-07-15 2012-02-02 Nissan Chem Ind Ltd イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP5890990B2 (ja) * 2010-11-01 2016-03-22 株式会社キーエンス インクジェット光造形法における、光造形品形成用モデル材、光造形品の光造形時の形状支持用サポート材および光造形品の製造方法
JP5518772B2 (ja) * 2011-03-15 2014-06-11 信越化学工業株式会社 パターン形成方法
KR101910682B1 (ko) * 2011-04-25 2018-10-22 에이지씨 가부시키가이샤 발수발유제 조성물, 그 제조 방법 및 물품
WO2012147210A1 (ja) * 2011-04-28 2012-11-01 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
JP6137483B2 (ja) * 2011-08-04 2017-05-31 日産化学工業株式会社 縮合系ポリマーを有するｅｕｖリソグラフィー用レジスト下層膜形成組成物
JP5882776B2 (ja) * 2012-02-14 2016-03-09 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP5894106B2 (ja) * 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
CN104737076B (zh) * 2012-10-31 2020-04-03 日产化学工业株式会社 具有酯基的含硅抗蚀剂下层膜形成用组合物
EP2937391A4 (en) * 2012-12-18 2016-08-31 Nissan Chemical Ind Ltd COMPOSITION FOR FORMING BACKGROUND FILM OF SELF-ORGANIZING FILM CONTAINING POLYCYCLIC ORGANIC VINYL COMPOUND
JPWO2014167671A1 (ja) * 2013-04-10 2017-02-16 千代田ケミカル株式会社 感光性樹脂組成物
KR101674989B1 (ko) * 2013-05-21 2016-11-22 제일모직 주식회사 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR102255221B1 (ko) * 2013-12-27 2021-05-24 롬엔드하스전자재료코리아유한회사 나노리소그래피용 유기 바닥 반사방지 코팅 조성물
JP6569204B2 (ja) * 2014-10-08 2019-09-04 大日本印刷株式会社 積層体の製造方法および積層体
US11092894B2 (en) * 2014-12-31 2021-08-17 Rohm And Haas Electronic Materials Korea Ltd. Method for forming pattern using anti-reflective coating composition comprising photoacid generator
US9499698B2 (en) * 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist

Also Published As

Publication number Publication date
US20160187778A1 (en) 2016-06-30
TWI592760B (zh) 2017-07-21
JP2016139123A (ja) 2016-08-04
KR102110178B1 (ko) 2020-05-13
JP2019003200A (ja) 2019-01-10
TW201626109A (zh) 2016-07-16
CN105739236A (zh) 2016-07-06
KR20180006474A (ko) 2018-01-17
US11762292B2 (en) 2023-09-19
JP6788639B2 (ja) 2020-11-25
KR20160082470A (ko) 2016-07-08

Similar Documents

Publication Publication Date Title
JP6751454B2 (ja) オーバーコートされたフォトレジストと共に使用するためのコーティング組成物
TWI745613B (zh) 具有熱酸產生劑的抗反射組合物
TWI709587B (zh) 塗佈之基板及形成光阻劑浮雕圖像之方法
JP6788639B2 (ja) オーバーコートされたフォトレジストと共に使用するためのコーティング組成物
TWI794186B (zh) 用於與上塗光阻使用之塗佈組成物
JP6453378B2 (ja) オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
CN111033381B (zh) 与外涂覆的光致抗蚀剂一起使用的涂料组合物
CN109143783B (zh) 与外涂布光致抗蚀剂一起使用的涂料组合物
TWI721304B (zh) 與外塗佈光致抗蝕劑一起使用的塗料組合物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: Han Guozhongqingnandao

Patentee after: DuPont Special Materials Korea Co.,Ltd.

Country or region after: Republic of Korea

Address before: Han Guozhongqingnandao

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS KOREA Ltd.

Country or region before: Republic of Korea

CP03 Change of name, title or address