JP2016111103A - 積層体の製造方法、封止基板積層体の製造方法、封止基板積層体及び封止基板 - Google Patents
積層体の製造方法、封止基板積層体の製造方法、封止基板積層体及び封止基板 Download PDFInfo
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- JP2016111103A JP2016111103A JP2014245389A JP2014245389A JP2016111103A JP 2016111103 A JP2016111103 A JP 2016111103A JP 2014245389 A JP2014245389 A JP 2014245389A JP 2014245389 A JP2014245389 A JP 2014245389A JP 2016111103 A JP2016111103 A JP 2016111103A
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Images
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Abstract
Description
図1〜図3を用いて、本発明の一実施形態に係る積層体の製造方法をより詳細に説明する。
図1の(a)及び(b)に示すように、段差形成工程では、基板1の周端部を研削することによって、段差を形成する。図1の(a)は、基板1の厚さ方向における断面を示す模式図であり、図1の(b)は、段差が形成された後の基板1の厚さ方向における断面を示す模式図である。また、本実施形態に係る積層体の製造方法では、段差形成工程において、基板1に段差を形成した後に、基板1における段差を形成した側の面において電極dを形成する(図1の(c))。
基板1は、典型的には、Siインターポーザー等である。また、限定されるものではないが、図1の(a)に示すように、本実施形態に係る積層体10の製造方法において用いられる基板1は、平面視における形状が円形の平板であり、基板1の周端部には、基板1の向きを特定するためのノッチ(切り欠き部、不図示)が形成されている。なお、図1の(b)に示すように、段差形成工程では、基板1における一方の面の周端部を研削することによって、基板1の周端部に段差を形成する。このため、基板1における周端部を研削していない側の面の周端部において、ノッチの形状を残すことができる。
図3の(a)及び(b)を用いて、基板1に形成される段差についてより詳細に説明する。図3の(a)は基板1に形成される段差の概略を説明する図である。
また、図1の(c)に示すように、基板1は段差を形成された側の面における、当該段差よりも内側の平面部において電極dを形成する。基板1は、図3の(a)に示す幅W0側の面において、ノッチ(不図示)の形状を残しているため、当該ノッチを基準に基板1の向きを特定して、基板1の段差よりも内側の平面部に電極dを形成することができる。なお、電極dは、フォトリソグラフィー工程、エッチング工程及び化学蒸着(CVD)等の周知の工程を行なうことによって形成するとよい。
図1の(d)に示すように、接着層形成工程では、基板1における段差を形成した側の面に接着剤を塗布することによって接着層3を形成する。
接着層3の形成方法としては、基板1に接着剤を塗布してもよいし、基板1に接着剤が両面に塗布された接着テープを貼り付けてもよい。接着剤の塗布方法としては、特に限定されないが、例えば、スピンコート法、ディッピング法、ローラーブレード法、ドクターブレード法、スプレー法、スリットノズル法による塗布法等が挙げられる。また、接着剤を塗布した後、加熱により乾燥させてもよい。また、接着剤を直接、基板1に塗布する代わりに、接着剤が両面に予め塗布されているフィルム(いわゆる、ドライフィルム)を、基板1に貼付してもよい。
接着層3は、基板1とサポートプレート2とを貼り付けるために用いられる接着剤によって形成される層である。
炭化水素樹脂は、炭化水素骨格を有し、単量体組成物を重合してなる樹脂である。炭化水素樹脂として、シクロオレフィン系ポリマー(以下、「樹脂(A)」ということがある)、並びに、テルペン樹脂、ロジン系樹脂及び石油樹脂からなる群より選ばれる少なくとも1種の樹脂(以下、「樹脂(B)」ということがある)等が挙げられるが、これに限定されない。
このようなシクロオレフィンコポリマーとしては、APL 8008T、APL 8009T、及びAPL 6013T(全て三井化学株式会社製)等を使用することができる。
アクリル−スチレン系樹脂としては、例えば、スチレン又はスチレンの誘導体と、(メタ)アクリル酸エステル等とを単量体として用いて重合した樹脂が挙げられる。
マレイミド系樹脂としては、例えば、単量体として、N−メチルマレイミド、N−エチルマレイミド、N−n−プロピルマレイミド、N−イソプロピルマレイミド、N−n−ブチルマレイミド、N−イソブチルマレイミド、N−sec−ブチルマレイミド、N−tert−ブチルマレイミド、N−n−ペンチルマレイミド、N−n−ヘキシルマレイミド、N−n−へプチルマレイミド、N−n−オクチルマレイミド、N−ラウリルマレイミド、N−ステアリルマレイミド等のアルキル基を有するマレイミド、N−シクロプロピルマレイミド、N−シクロブチルマレイミド、N−シクロペンチルマレイミド、N−シクロヘキシルマレイミド、N−シクロヘプチルマレイミド、N−シクロオクチルマレイミド等の脂肪族炭化水素基を有するマレイミド、N−フェニルマレイミド、N−m−メチルフェニルマレイミド、N−o−メチルフェニルマレイミド、N−p−メチルフェニルマレイミド等のアリール基を有する芳香族マレイミド等を重合して得られた樹脂が挙げられる。
エラストマーは、主鎖の構成単位としてスチレン単位を含んでいることが好ましく、当該「スチレン単位」は置換基を有していてもよい。置換基としては、例えば、炭素数1〜5のアルキル基、炭素数1〜5のアルコキシ基、炭素数1〜5のアルコキシアルキル基、アセトキシ基、カルボキシル基等が挙げられる。また、当該スチレン単位の含有量が14重量%以上、50重量%以下の範囲内であることがより好ましい。さらに、エラストマーは、重量平均分子量が10,000以上、200,000以下の範囲内であることが好ましい。
接着層3を形成するときに使用する希釈溶剤としては、例えば、ヘキサン、ヘプタン、オクタン、ノナン、メチルオクタン、デカン、ウンデカン、ドデカン、トリデカン等の直鎖状の炭化水素、炭素数4から15の分岐鎖状の炭化水素、例えば、シクロヘキサン、シクロヘプタン、シクロオクタン、ナフタレン、デカヒドロナフタレン、テトラヒドロナフタレン等の環状炭化水素、p−メンタン、o−メンタン、m−メンタン、ジフェニルメンタン、1,4−テルピン、1,8−テルピン、ボルナン、ノルボルナン、ピナン、ツジャン、カラン、ロンギホレン、ゲラニオール、ネロール、リナロール、シトラール、シトロネロール、メントール、イソメントール、ネオメントール、α−テルピネオール、β−テルピネオール、γ−テルピネオール、テルピネン−1−オール、テルピネン−4−オール、ジヒドロターピニルアセテート、1,4−シネオール、1,8−シネオール、ボルネオール、カルボン、ヨノン、ツヨン、カンファー、d−リモネン、l−リモネン、ジペンテン等のテルペン系溶剤;γ−ブチロラクトン等のラクトン類;アセトン、メチルエチルケトン、シクロヘキサノン(CH)、メチル−n−ペンチルケトン、メチルイソペンチルケトン、2−ヘプタノン等のケトン類;エチレングリコール、ジエチレングリコール、プロピレングリコール、ジプロピレングリコール等の多価アルコール類;エチレングリコールモノアセテート、ジエチレングリコールモノアセテート、プロピレングリコールモノアセテート、又はジプロピレングリコールモノアセテート等のエステル結合を有する化合物、前記多価アルコール類又は前記エステル結合を有する化合物のモノメチルエーテル、モノエチルエーテル、モノプロピルエーテル、モノブチルエーテル等のモノアルキルエーテル又はモノフェニルエーテル等のエーテル結合を有する化合物等の多価アルコール類の誘導体(これらの中では、プロピレングリコールモノメチルエーテルアセテート(PGMEA)、プロピレングリコールモノメチルエーテル(PGME)が好ましい);ジオキサンのような環式エーテル類や、乳酸メチル、乳酸エチル(EL)、酢酸メチル、酢酸エチル、酢酸ブチル、メトキシブチルアセテート、ピルビン酸メチル、ピルビン酸エチル、メトキシプロピオン酸メチル、エトキシプロピオン酸エチル等のエステル類;アニソール、エチルベンジルエーテル、クレジルメチルエーテル、ジフェニルエーテル、ジベンジルエーテル、フェネトール、ブチルフェニルエーテル等の芳香族系有機溶剤等を挙げることができる。
接着層3を構成する接着剤は、本質的な特性を損なわない範囲において、混和性のある他の物質をさらに含んでいてもよい。例えば、接着剤の性能を改良するための付加的樹脂、可塑剤、接着補助剤、安定剤、着色剤、熱重合禁止剤及び界面活性剤等、慣用されている各種添加剤をさらに用いることができる。
分離層形成工程では、図1の(e)に示す光を透過する材料からなるサポートプレート2上に、光を照射することによって変質する分離層4を形成する(図1の(f))。
図1の(e)に示すサポートプレート(支持体)2は、分離層4を変質させるための光を透過するものであればよい。以上の観点から、サポートプレート2としては、例えば、ガラス、シリコン、アクリル系樹脂からなるものが挙げられる。
分離層4とは、サポートプレート2を介して照射される光を吸収することによって変質する材料から形成されている層である。
分離層4は、フルオロカーボンからなっていてもよい。分離層4は、フルオロカーボンによって構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、サポートプレート2を持ち上げる等)ことによって、分離層4が破壊されて、サポートプレート2と基板1とを分離し易くすることができる。分離層4を構成するフルオロカーボンは、プラズマCVD(化学気相堆積)法によって好適に成膜することができる。
分離層4は、光吸収性を有している構造をその繰り返し単位に含んでいる重合体を含有していてもよい。該重合体は、光の照射を受けて変質する。該重合体の変質は、上記構造が照射された光を吸収することによって生じる。分離層4は、重合体の変質の結果として、光の照射を受ける前の強度又は接着性を失っている。よって、わずかな外力を加える(例えば、サポートプレート2を持ち上げる等)ことによって、分離層4が破壊されて、サポートプレート2と基板1とを分離し易くすることができる。
また、上記重合体は、例えば、以下の式のうち、(a)〜(d)の何れかによって表される繰り返し単位を含んでいるか、(e)によって表されるか、又は(f)の構造をその主鎖に含んでいる。
上記の“化2”に示されるベンゼン環、縮合環及び複素環の例としては、フェニル、置換フェニル、ベンジル、置換ベンジル、ナフタレン、置換ナフタレン、アントラセン、置換アントラセン、アントラキノン、置換アントラキノン、アクリジン、置換アクリジン、アゾベンゼン、置換アゾベンゼン、フルオリム、置換フルオリム、フルオリモン、置換フルオリモン、カルバゾール、置換カルバゾール、N−アルキルカルバゾール、ジベンゾフラン、置換ジベンゾフラン、フェナントレン、置換フェナントレン、ピレン及び置換ピレンが挙げられる。例示した置換基がさらに置換基を有している場合、その置換基は、例えば、アルキル、アリール、ハロゲン原子、アルコキシ、ニトロ、アルデヒド、シアノ、アミド、ジアルキルアミノ、スルホンアミド、イミド、カルボン酸、カルボン酸エステル、スルホン酸、スルホン酸エステル、アルキルアミノ及びアリールアミノから選択される。
分離層4は、無機物からなっていてもよい。分離層4は、無機物によって構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、サポートプレート2を持ち上げる等)ことによって、分離層4が破壊されて、サポートプレート2と基板1とを分離し易くすることができる。
分離層4は、赤外線吸収性の構造を有する化合物によって形成されていてもよい。該化合物は、赤外線を吸収することにより変質する。分離層4は、化合物の変質の結果として、赤外線の照射を受ける前の強度又は接着性を失っている。よって、わずかな外力を加える(例えば、支持体を持ち上げる等)ことによって、分離層4が破壊されて、サポートプレート2と基板1とを分離し易くすることができる。
中でも、シロキサン骨格を有する化合物としては、上記化学式(3)で表される繰り返し単位及び下記化学式(5)で表される繰り返し単位の共重合体であるt−ブチルスチレン(TBST)−ジメチルシロキサン共重合体がより好ましく、上記式(3)で表される繰り返し単位及び下記化学式(5)で表される繰り返し単位を1:1で含む、TBST−ジメチルシロキサン共重合体がさらに好ましい。
シルセスキオキサン骨格を有する化合物としては、このほかにも、特開2007−258663号公報(2007年10月4日公開)、特開2010−120901号公報(2010年6月3日公開)、特開2009−263316号公報(2009年11月12日公開)及び特開2009−263596号公報(2009年11月12日公開)において開示されている各シルセスキオキサン樹脂を好適に利用することができる。
分離層4は、赤外線吸収物質を含有していてもよい。分離層4は、赤外線吸収物質を含有して構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度又は接着性を失う。よって、わずかな外力を加える(例えば、サポートプレート2を持ち上げる等)ことによって、分離層4が破壊されて、サポートプレート2と基板1とを分離し易くすることができる。
図1の(g)に示すように、積層体形成工程では、基板1とサポートプレート2とを仮止めすることによって基板1、接着層3、分離層4及びサポートプレート2を、この順に積層する。
図2の(a)及び(b)に示すように、本実施形態に係る積層体10の製造方法では、基板1における段差がなくなるまで基板1を薄化する。また、図2の(c)に示すように、本実施形態に係る積層体10の製造方法では、薄化工程を行なった後の積層体10における基板1に素子cを取り付ける。
図2の(c)に示すように、本実施形態に係る積層体10の製造方法では、薄化工程を行なった後、積層体10における基板1の研削された面に露出した電極d上に、素子cを実装する。
図1〜図3を用いて、本発明の一実施形態に係る封止基板積層体11の製造方法について、より詳細に説明する。
図2の(d)に示すように、本実施形態に係る封止基板積層体11の製造方法では、金型20のキャビティに基板1が収容されるようにして積層体10を金型20に載置することで当該キャビティをサポートプレート(支持体)2で塞ぎ、これによって形成された金型20と積層体10との間の空間に供給された封止材5によって、少なくとも基板1を封止する。なお、封止基板形成工程では、金型20と積層体10との間の空間から封止材が漏出することを防止するために、金型20のキャビティを塞いでいるサポートプレート2に対して、金型20を介して押圧力を加えながら、当該キャビティの内側に封止材を注入してもよく、積層体10における基板1上に封止材5を供給し、金型20を用いて積層体10に対して押し圧力を加えることによって、基板1上に実装された素子cを封止してもよい。また、封止基板形成工程では、封止材5を金型20に注入した後、封止材5を加熱によって反応硬化させてもよい。これによって基板1上に実装された素子cを封止する。
封止基板形成工程において、基板1に実装された素子cを封止するための封止材には、例えば、ポリイミド樹脂、エポキシ樹脂、及び酸無水物を含む樹脂等を含んでいるものを用いることができる。
金型20は、基板1を封止する封止材を成型するためのものである。例えば、金型20は、その内部から外部に連通する注入口(不図示)を通じて、基板1に実装された素子cを封止するための封止材5を金型20のキャビティの内側に注入して基板1を封止するものであってもよい。また、金型20は、封止材5を基板1上に供給し、金型によって封止材5を供給された積層体10対して押圧力を加えることで基板1に実装された素子cを封止するものであってもよい。また、金型20のキャビティには、封止基板積層体を離型し易くするために離型剤を塗布するなどの処理が施されていてもよい。金型の種類は、封止材の種類や積層体の種類などによって適宜選択すればよい。
図2の(e)に示すように、離型工程では、金型20から封止基板積層体11を離型する。これによって、基板1における歪みを低減した封止基板積層体11を製造することができる。なお、図2の(f)に示すように、離形工程の後、封止基板積層体11における封止材5の余剰部分は、研削することによって除去すればよい。
図2の(f)に示すように、基板1、接着層3、光を吸収することによって変質する分離層4、及び光を透過する材料からなるサポートプレート(支持体)2をこの順に積層してなる積層体10と、基板1、接着層3及び分離層4を封止する封止材5と、を備え、封止材5の周縁が、サポートプレート2の周縁よりも内側に位置している封止基板積層体11も本発明の範疇である。
本発明の一実施形態に係る封止基板6の製造方法は、本発明の一実施形態に係る封止基板積層体11を製造する封止基板積層体製造工程と、封止基板積層体製造工程との後に、サポートプレート2を介して分離層4に光を照射して分離層4を変質させることによって、封止基板積層体11からサポートプレート2を分離する分離工程(図2の(g)及び(f))を包含している。なお、封止基板積層体製造工程については、上記実施形態にかかる封止基板積層体の製造方法と同じであるため、その説明を省略する。
図2の(g)に示すように、分離工程では、サポートプレート2を介して分離層4に光を照射する。これによって、封止基板積層体11の分離層4を変質させる。
本発明に係る封止基板6の製造方法によって製造された封止基板6も、本発明の範疇である(図2の(h))。なお、封止基板6は、後の工程において、接着層3及び分離層4の残渣を除去し、ダイシング工程を行なうことによって、半導体チップを形成する。
封止基板の製造評価として、周端部において段差を形成した基板を用いて作製した積層体と、周端部において段差を形成していない基板を用いて作製した積層体とにおいて、同じ金型を用いて基板に封止し、封止基板積層体における接着剤のはみ出しの有無を評価した。また、基板を封止した封止基板積層体について分離工程を行ない、封止基板の分離性を評価した。
まず、実施例1の積層体を形成するために用いる基板の周端部に段差を形成した。基板としては、厚さ775μmの半導体ウエハ基板(外径300mm、シリコン)を用い、トリマー・グラインダ(DISCO社製)を用いて、図3の(a)に示す基板の幅W2が290mm、幅h1が150μmとなるように、基板1に段差を形成した(段差成形工程)。
上記実施例1〜3及び比較例1〜3の積層体において、バックグラインド装置(DISCO社製)にて、厚さが50μmになるまで基板を薄化した(薄化工程)。なお、実施例1〜3及び比較例1〜3の積層体における、薄化工程を行なった後の基板の外径W2は、域の表1に示す通りである。
つぎに、実施例1の積層体を用いて、分離工程を行ない、ガラス支持体と封止基板との分離性の評価を行なった。分離工程における分離層へのレーザ光照射の条件は、波長532nm、繰り返し周波数40kHz、レーザ走査速度6500mm/秒、レーザスポットのピッチ180μmの条件であった。
実施例1の積層体は、分離工程を行なうことによって、ガラス支持体と接着層との間の接着力を低下させるのみならず、ガラス支持体と封止材との間の接着力も低下させることができ、封止基板積層体から封止基板を好適に分離することができることを確認することができた。従って、分離層が形成されたガラス支持体によって、金型のキャビティを塞ぐことにより、ガラス支持体と封止材との間における接着力も分離層を変質させることにより低下させることができることを確認することができた。
2 サポートプレート(支持体)
3 接着層
4 分離層
5 封止材
6 封止基板
10 積層体
11 封止基板積層体
20 金型
Claims (6)
- 基板における周縁部を研削して段差を形成することで、当該段差よりも内側の面の大きさを、金型のキャビティに収容することができる大きさにする、段差形成工程と、
上記段差形成工程の後に、上記基板と、接着層と、光を吸収することによって変質する分離層と、光を透過する材料からなる支持体とをこの順に積層して積層体を形成する積層体形成工程とを包含し、
上記積層体形成工程では、上記基板の段差よりも内側の面が上記支持体に対向するように上記基板を積層することを特徴とする積層体の製造方法。 - 上記積層体形成工程の後に、上記段差を形成した対向面の裏側から上記段差がなくなるまで上記基板を薄化する薄化工程をさらに包含することを特徴とする請求項1に記載の積層体の製造方法。
- 請求項2に記載の製造方法によって積層体を製造する積層体製造工程と、
上記薄化工程の後に、上記金型のキャビティに上記基板が収容されるようにして上記積層体を当該金型に載置することで当該キャビティを上記支持体で塞ぎ、これによって形成された金型と積層体との間の空間に供給された封止材により、少なくとも上記基板を封止して封止基板積層体を形成する封止基板形成工程と、
上記封止基板形成工程の後に、上記金型から上記封止基板積層体を離型する離型工程と、を包含することを特徴とする封止基板積層体の製造方法。 - 請求項3に記載の製造方法によって封止基板積層体を製造する封止基板積層体製造工程と、
封止基板積層体製造工程の後に、上記支持体を介して上記分離層に光を照射して上記分離層を変質させることによって、上記封止基板積層体から上記支持体を分離する分離工程と、を包含していることを特徴とする封止基板の製造方法。 - 基板、接着層、光を吸収することによって変質する分離層、及び光を透過する材料からなる支持体をこの順に積層してなる積層体と、
上記基板、上記接着層及び上記分離層を封止する封止材と、を備え、
上記封止材の周縁が、上記支持体の周縁よりも内側に位置していることを特徴とする封止基板積層体。 - 請求項4に記載の封止基板の製造方法によって製造された封止基板。
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