JP2016076646A - 静電チャック - Google Patents
静電チャック Download PDFInfo
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- JP2016076646A JP2016076646A JP2014207148A JP2014207148A JP2016076646A JP 2016076646 A JP2016076646 A JP 2016076646A JP 2014207148 A JP2014207148 A JP 2014207148A JP 2014207148 A JP2014207148 A JP 2014207148A JP 2016076646 A JP2016076646 A JP 2016076646A
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- 239000000758 substrate Substances 0.000 claims abstract description 131
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 238000010438 heat treatment Methods 0.000 claims abstract description 51
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 238000001179 sorption measurement Methods 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 abstract description 26
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 18
- 239000012790 adhesive layer Substances 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000000112 cooling gas Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
Description
前記本体基板と前記金属ベースとは、例えば、両者の間に接着層等を介して接合(接着)される。接着層を構成する材料としては、例えば、シリコーン樹脂、アクリル樹脂、エポキシ樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、ポリアミド樹脂等の樹脂材料、インジウム等の金属材料等を用いることができる。
(実施形態1)
図1〜図5に示すように、本実施形態の静電チャック1は、基板表面111及び基板裏面112を有し、セラミックからなる本体基板11と、本体基板11に設けられた吸着用電極21と、ベース表面121及びベース裏面122を有し、ベース表面121を本体基板11の基板裏面112側に向けて配置された金属ベース12と、金属ベース12のベース表面121とベース裏面122との間を貫通して形成された内部貫通穴51と、を備えている。
まず、従来公知の方法により、アルミナを主成分とするセラミックグリーンシートを作製する。本実施形態では、本体基板11となる複数のセラミックグリーンシートを作製する。
本実施形態の静電チャック1では、内部貫通穴51内に、本体基板11の各加熱領域113a、113bのヒータ電極41a、41bに電気的に接続された複数(4つ)のヒータ電極端子53を集約して配置している。そして、内部貫通穴51内に集約して配置された複数(4つ)のヒータ電極端子53は、内部貫通穴51内に配置された接続部材6に電気的に接続されている。
本実施形態は、図6(A)、(B)に示すように、静電チャック1において、接続部材6の構成を変更した例である。
本実施形態では、ヒータ電極端子53と接続部材6のコネクタ部61とが中継部材63を介して接続されている。そのため、ヒータ電極端子53の構成(例えば、雄型接続部531のピン形状、直径、長さ、ピッチ等)が変更されても、接続部材6の中継部材63の構成(例えば、雌型接続部631の形状等)を変更することにより、接続部材6の他の部分(例えば、コネクタ部61、接続ケーブル62等)の構成を変更することなく、ヒータ電極端子53と接続部材6との電気的な接続を容易に行うことができる。その他の基本的な作用効果は、実施形態1と同様である。
本発明は、前述の実施形態等に何ら限定されるものではなく、本発明を逸脱しない範囲において種々の態様で実施しうることはいうまでもない。
(2)前述の実施形態では、内部貫通穴が本体基板の第1加熱領域内に配置されているが、例えば、内部貫通穴が本体基板の第2加熱領域内に配置されていてもよい。
11…本体基板
111…基板表面
112…基板裏面
12…金属ベース
121…ベース表面
122…ベース裏面
21…吸着用電極
51…内部貫通穴
113…加熱領域
41…ヒータ電極
53…ヒータ電極端子
6…接続部材
Claims (4)
- 基板表面及び基板裏面を有し、セラミックからなる本体基板と、
該本体基板に設けられた吸着用電極と、
ベース表面及びベース裏面を有し、前記ベース表面を前記本体基板の前記基板裏面側に向けて配置された金属ベースと、
該金属ベースの前記ベース表面と前記ベース裏面とを貫通して形成された内部貫通穴と、を備え、
前記本体基板には、それぞれにヒータ電極が配置された複数の加熱領域が設けられ、
前記内部貫通穴内には、前記各加熱領域の前記ヒータ電極に電気的に接続された複数のヒータ電極端子が配置され、
前記内部貫通穴内に配置された前記複数のヒータ電極端子は、前記内部貫通穴内に配置された接続部材に電気的に接続されていることを特徴とする静電チャック。 - 前記本体基板の前記基板表面側から前記基板裏面側を見た場合に、前記内部貫通穴は、前記本体基板のいずれかの前記加熱領域内に配置されていることを特徴とする請求項1に記載の静電チャック。
- 前記金属ベースの前記ベース表面と前記ベース裏面とを貫通して形成され、前記吸着用電極に電気的に接続された吸着用電極端子を配置する貫通端子穴をさらに備え、前記本体基板の前記基板表面側から前記基板裏面側を見た場合に、前記貫通端子穴は、前記内部貫通穴と同じ前記加熱領域内に配置されていることを特徴とする請求項2に記載の静電チャック。
- 前記ヒータ電極端子には、凸状の雄型接続部が設けられ、前記接続部材には、前記ヒータ電極端子の前記雄型接続部に接続される凹状の雌型接続部が複数設けられていることを特徴とする請求項1〜3のいずれか1項に記載の静電チャック。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014207148A JP6463938B2 (ja) | 2014-10-08 | 2014-10-08 | 静電チャック |
KR1020150129907A KR20160041758A (ko) | 2014-10-08 | 2015-09-14 | 정전척 |
TW104132476A TWI581364B (zh) | 2014-10-08 | 2015-10-02 | 靜電夾頭 |
US14/877,630 US10354904B2 (en) | 2014-10-08 | 2015-10-07 | Electrostatic chuck |
CN201510647044.8A CN105514014B (zh) | 2014-10-08 | 2015-10-08 | 静电卡盘 |
KR1020180065312A KR20180068330A (ko) | 2014-10-08 | 2018-06-07 | 정전척 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014207148A JP6463938B2 (ja) | 2014-10-08 | 2014-10-08 | 静電チャック |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016076646A true JP2016076646A (ja) | 2016-05-12 |
JP6463938B2 JP6463938B2 (ja) | 2019-02-06 |
Family
ID=55721896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014207148A Active JP6463938B2 (ja) | 2014-10-08 | 2014-10-08 | 静電チャック |
Country Status (5)
Country | Link |
---|---|
US (1) | US10354904B2 (ja) |
JP (1) | JP6463938B2 (ja) |
KR (2) | KR20160041758A (ja) |
CN (1) | CN105514014B (ja) |
TW (1) | TWI581364B (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017228649A (ja) * | 2016-06-22 | 2017-12-28 | 日本特殊陶業株式会社 | 保持装置 |
JP2018018587A (ja) * | 2016-07-25 | 2018-02-01 | 日本特殊陶業株式会社 | 保持装置 |
JP2019054041A (ja) * | 2017-09-13 | 2019-04-04 | 日本特殊陶業株式会社 | 保持装置 |
JP2019062072A (ja) * | 2017-09-26 | 2019-04-18 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
JP2019149434A (ja) * | 2018-02-27 | 2019-09-05 | 日本特殊陶業株式会社 | 保持装置 |
JP2019175882A (ja) * | 2018-03-26 | 2019-10-10 | 日本特殊陶業株式会社 | 加熱装置 |
JP2019220537A (ja) * | 2018-06-19 | 2019-12-26 | 日本特殊陶業株式会社 | 保持装置 |
JPWO2019159862A1 (ja) * | 2018-02-16 | 2020-02-27 | 日本特殊陶業株式会社 | 保持装置 |
US11005202B2 (en) | 2018-11-14 | 2021-05-11 | Molex, Llc | Connector |
JP2021514110A (ja) * | 2018-02-20 | 2021-06-03 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Ald温度均一性のためのpbnヒータ |
WO2022060600A1 (en) * | 2020-09-18 | 2022-03-24 | Applied Materials, Inc. | An electrostatic chuck having a heating and chucking capabilities |
WO2024058183A1 (ja) * | 2022-09-14 | 2024-03-21 | 京セラ株式会社 | 吸着基板 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5987966B2 (ja) * | 2014-12-10 | 2016-09-07 | Toto株式会社 | 静電チャックおよびウェーハ処理装置 |
US10631370B2 (en) * | 2015-10-30 | 2020-04-21 | Ngk Insulators, Ltd. | Member for semiconductor manufacturing apparatus, method for producing the same, and heater including shaft |
KR102513443B1 (ko) * | 2016-03-15 | 2023-03-24 | 삼성전자주식회사 | 정전 척 및 그를 포함하는 기판 처리 장치 |
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Also Published As
Publication number | Publication date |
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CN105514014B (zh) | 2019-06-11 |
US20160126125A1 (en) | 2016-05-05 |
KR20180068330A (ko) | 2018-06-21 |
JP6463938B2 (ja) | 2019-02-06 |
US10354904B2 (en) | 2019-07-16 |
KR20160041758A (ko) | 2016-04-18 |
CN105514014A (zh) | 2016-04-20 |
TWI581364B (zh) | 2017-05-01 |
TW201624606A (zh) | 2016-07-01 |
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