JP2016040944A - 高い耐電力性及び高い導電性を有するメタライジング層 - Google Patents
高い耐電力性及び高い導電性を有するメタライジング層 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000010936 titanium Substances 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 238000010897 surface acoustic wave method Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 3
- 150000003609 titanium compounds Chemical class 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910018134 Al-Mg Inorganic materials 0.000 claims 1
- 229910018182 Al—Cu Inorganic materials 0.000 claims 1
- 229910018467 Al—Mg Inorganic materials 0.000 claims 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims 1
- 229910000861 Mg alloy Inorganic materials 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 229910052719 titanium Inorganic materials 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 6
- 239000010949 copper Substances 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 6
- 239000004922 lacquer Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
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- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
- H05K1/0265—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board characterized by the lay-out of or details of the printed conductors, e.g. reinforced conductors, redundant conductors, conductors having different cross-sections
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- H05K1/02—Details
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- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Geometry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Electrodes Of Semiconductors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
M メタライジング層
ML 中間層
PL 圧電層
S 基板
TL 上層部
UL 上側層
Claims (16)
- 電気的デバイスにおける電流導通構造のためのメタライジング層(M)であって、該メタライジング層(M)は基板(S)上に配置すると共に、ベース部及び該ベース部上に配置した上層部(TL)を備え、前記ベース部は下側層(BL)を有し、該下側層(BL)は基板上方又は基板表面に配置すると共に、主成分としてTi又はチタン化合物を含有するものであり、前記ベース部はさらに上側層(UL)を有し、該上側層(UL)は前記下側層(BL)上方に配置すると共に、主成分としてCuを含有するものであり、前記上層部(TL)は前記上側層(UL)上に直接配置すると共に、主成分としてAlを含有する構成であり、前記ベース部は中間層(ML)を有し、該中間層(ML)は前記下側層(BL)と前記上側層(UL)との間に配置すると共に、Agを含有する構成としたメタライジング層。
- 請求項1記載のメタライジング層において、前記下側層(BL)を前記上側層(UL)よりも薄く形成したメタライジング層。
- 請求項1又は2記載のメタライジング層において、前記上側層(UL)を前記上層部(TL)よりも薄く形成したメタライジング層。
- 請求項1〜3のいずれか一項記載のメタライジング層において、前記中間層(ML)を前記下側層(BL)又は前記上側層(UL)よりも薄く形成したメタライジング層。
- 請求項1〜4のいずれか一項記載のメタライジング層において、前記下側層(BL)は2nm〜20nmの厚さ、前記中間層(ML)は0.5nm〜10nmの厚さ、さらに前記上側層(UL)は1nm〜30nmの厚さを有する構成としたメタライジング層。
- 請求項1〜5のいずれか一項記載のメタライジング層において、前記下側層(BL)はTiNを含有する構成としたメタライジング層。
- 請求項1〜6のいずれか一項記載のメタライジング層において、前記上層部(TL)が主成分としてAl含有すると共に、Cu、Mg、Al-Cu合金、Al-Mg合金又はAl-Cu-Mg合金を含有する構成としたメタライジング層。
- 請求項1〜7のいずれか一項記載のメタライジング層において、前記上層部(TL)は<111>テクスチャを有するものとしたメタライジング層。
- 請求項1〜8のいずれか一項記載のメタライジング層において、前記基板(S)と前記下側層(BL)との間に圧電層(PL)を配置する構成としたメタライジング層。
- 請求項1〜9のいずれか一項記載のメタライジング層において、前記基板(S)自体が圧電性を有する構成としたメタライジング層。
- 請求項9又は10記載のメタライジング層において、前記基板(S)又は前記圧電層(PL)がLiTaO3又はLiNbO3を含有する構成としたメタライジング層。
- 請求項1〜11のいずれか一項記載のメタライジング層において、音響波をもって作動するデバイスに使用するためのメタライジング層。
- 請求項1〜12のいずれか一項記載のメタライジング層において、表面弾性波をもって作動するデバイスに使用するためのメタライジング層。
- 請求項1〜13のいずれか一項記載のメタライジング層において、表面弾性波をもって作動するデュプレクサに使用するためのメタライジング層。
- 請求項1〜14のいずれか一項記載のメタライジング層を形成するための方法であって、
基板(S)を用意するステップと、
リフトオフ法を利用してメタライジング層を塗布するステップと
を有する方法。 - 請求項15記載のメタライジング層を形成するための方法において、
基板表面を洗浄するステップと、
フォトレジストを基板表面に塗布するステップと、
前記フォトレジストをパターニングするステップと、
基板及び前記フォトレジストの露出表面に前記メタライジング層を塗布するステップと、
前記フォトレジストを、そのフォトレジスト上に直接塗布した前記メタライジング層と共に除去するステップと
を有する方法。
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DE102009056663.5A DE102009056663B4 (de) | 2009-12-02 | 2009-12-02 | Metallisierung mit hoher Leistungsverträglichkeit und hoher elektrischer Leitfähigkeit und Verfahren zur Herstellung |
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CN109660224B (zh) * | 2018-12-18 | 2023-03-24 | 北方民族大学 | 滤波器用复合压电基片及其制备方法 |
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US20160020378A1 (en) | 2016-01-21 |
JP6450669B2 (ja) | 2019-01-09 |
US9728705B2 (en) | 2017-08-08 |
DE102009056663A1 (de) | 2011-06-09 |
WO2011067281A1 (de) | 2011-06-09 |
JP5878127B2 (ja) | 2016-03-08 |
US9173305B2 (en) | 2015-10-27 |
CN102763492A (zh) | 2012-10-31 |
DE102009056663B4 (de) | 2022-08-11 |
US20120280595A1 (en) | 2012-11-08 |
CN105702660A (zh) | 2016-06-22 |
JP2013513232A (ja) | 2013-04-18 |
CN102763492B (zh) | 2016-04-13 |
KR101761955B1 (ko) | 2017-07-26 |
KR20120094489A (ko) | 2012-08-24 |
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