JP2016004866A - 成膜装置、成膜方法、記憶媒体 - Google Patents
成膜装置、成膜方法、記憶媒体 Download PDFInfo
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Abstract
【解決手段】第1の領域及び第2の領域に対してテーブルが相対的に回転することで、基板が第1の領域と第2の領域とに交互に繰り返し位置されるように装置を構成する。第1の領域には原料ガスが供給され、第2の領域においてはテーブルに対して相対的に処理空間形成部材が昇降する。前記処理空間形成部により構成される処理空間には、オゾンを含む雰囲気ガスが供給されると共にオゾンが強制的に分解されるようにエネルギーが供給され、このオゾンの分解により原料の酸化を行う。さらに、処理空間を不活性ガスが供給されるバッファ領域に連通した状態と、バッファ領域から区画された状態とで切り替える区画機構が設けられ、前記分解時の処理空間の圧力上昇を抑える。
【選択図】図2
Description
前記テーブル上にて周方向に配置される第1の領域及び第2の領域に対して当該テーブルを相対的に回転させ、前記基板を第1の領域と第2の領域とに交互に繰り返し位置させる回転機構と、
前記基板に原料を吸着させるために、前記原料を気体の状態で原料ガスとして前記第1の領域に供給する原料ガス供給部と、
前記第1の領域から隔離された処理空間を前記第2の領域に位置する基板の周囲に形成するために、当該テーブルに対して相対的に昇降する処理空間形成部材と、
前記処理空間に連鎖分解反応を起こす濃度以上の濃度のオゾンを含むオゾン雰囲気を形成するための雰囲気ガスを供給する雰囲気ガス供給部と、
前記オゾン雰囲気にエネルギーを供給してオゾンを強制的に分解させることにより酸素の活性種を発生させ、当該活性種により前記基板の表面に吸着されている原料を酸化して前記酸化物を得るためのエネルギー供給部と、
前記オゾンの分解による前記処理空間の圧力上昇を緩和するために、前記処理空間に接続されるように設けられ、不活性ガスが供給されるバッファ領域と、
前記雰囲気ガスが前記処理空間に供給されるときには当該処理空間に対して前記バッファ領域を区画し、前記オゾンの分解が起きるときには前記処理空間に対して前記バッファ領域を連通させる区画機構と、
を備えることを特徴とする。
本発明の第1の実施形態に係る成膜装置1について、成膜装置1の縦断側面図、横断平面図である図1、図2を参照しながら説明する。この成膜装置1はALDにより、基板であるウエハWに酸化シリコン膜を形成する。成膜装置1は、ウエハWの処理中にその内部が排気され、真空雰囲気とされる真空容器11を備えており、真空容器11は概ね扁平な円形に形成されている。真空容器11の内部は、当該真空容器11の外部から加熱及び冷却がなされない、即ち室温であり、後述の各反応は室温で進行する。ところで図1は、図2の状態から後述の回転テーブル12が若干回転したときにおける、当該図2中のA、A´間に二点鎖線で示す箇所の断面を示している。図3は、真空容器11の内部を示す概略斜視図であり、この図3も適宜参照する。
続いて第2の実施形態に係る成膜装置について説明する。この成膜装置は、フード5A、5Bの代わりに、図27に示すフード8を備える。このフード8について、フード5A、5Bとの差異点を中心に説明する。このフード8の本体部51には突起68、開口部61及びバッファ領域62が設けられていない。なお、前記突起68が設けられないため、回転テーブル12においては、突起68に係合する溝16が設けられていない。
続いて第3の実施形態の成膜装置について説明する。この成膜装置は、フード8と略同様に構成されたフード9を備えていることを除いて、既述の各成膜装置と同様に構成される。フード9について、図30を参照しながらフード8との差異点を中心に説明する。このフード9は、バッファタンク82に接続されておらず、第2の実施形態でバッファタンク82に接続されていた排気管81の下流端は、バルブV4、排気量調整部67をこの順に介して排気機構23に接続されている。そして、Arガスの供給管56の下流端が、排気管81におけるバルブV4と、排気量調整部67との間に接続されている。
本発明に関連して行われた評価試験について説明する。評価試験1として、各実施形態で説明したように、室温で真空容器内の処理空間に各種のガスを供給して、既述のアミノシランの吸着、ウエハW表面のパージ、オゾンの連鎖分解反応によるアミノシランの酸化からなるサイクルを繰り返し行い、ウエハWに酸化シリコン膜を形成した。そして、この装置を用いて形成された酸化シリコン膜をウエットエッチングし、エッチングレートを測定した。この評価試験1においてはウエハWの一端側のエッチングレート、他端側のエッチングレートを夫々測定した。なお、この評価試験1で用いた成膜装置は、各実施形態で説明した成膜装置とは異なり、真空容器に1枚のウエハWを搬入し、当該ウエハWについて処理を行う枚葉式処理装置であり、真空容器内におけるフードの昇降による区画された領域の形成は行われない。
1 成膜装置
10 制御部
12 回転テーブル
30A、30B アミノシラン吸着領域
35 アミノシランガス供給部
40A、40B パージ領域
5A、5B フード
51 本体部
54 処理空間
57 O3ガス供給部
58 NOガス供給部
62 バッファ領域
65 Arガス供給部
67 排気量調整部
Claims (13)
- 真空容器内に形成された真空雰囲気で、テーブルに載置された基板の表面に酸化物の分子層を積層して薄膜を得る成膜装置において、
前記テーブル上にて周方向に配置される第1の領域及び第2の領域に対して当該テーブルを相対的に回転させ、前記基板を第1の領域と第2の領域とに交互に繰り返し位置させる回転機構と、
前記基板に原料を吸着させるために、前記原料を気体の状態で原料ガスとして前記第1の領域に供給する原料ガス供給部と、
前記第1の領域から隔離された処理空間を前記第2の領域に位置する基板の周囲に形成するために、当該テーブルに対して相対的に昇降する処理空間形成部材と、
前記処理空間に連鎖分解反応を起こす濃度以上の濃度のオゾンを含むオゾン雰囲気を形成するための雰囲気ガスを供給する雰囲気ガス供給部と、
前記オゾン雰囲気にエネルギーを供給してオゾンを強制的に分解させることにより酸素の活性種を発生させ、当該活性種により前記基板の表面に吸着されている原料を酸化して前記酸化物を得るためのエネルギー供給部と、
前記オゾンの分解による前記処理空間の圧力上昇を緩和するために、前記処理空間に接続されるように設けられ、不活性ガスが供給されるバッファ領域と、
前記雰囲気ガスが前記処理空間に供給されるときには当該処理空間に対して前記バッファ領域を区画し、前記オゾンの分解が起きるときには前記処理空間に対して前記バッファ領域を連通させる区画機構と、
を備えることを特徴とする成膜装置。 - 前記区画機構は、前記雰囲気ガスを処理空間に供給した後、前記エネルギー供給部によりエネルギー供給を行う前に、処理空間に対して前記バッファ空間を連通させることを特徴とする請求項1記載の成膜装置。
- 前記バッファ領域は、前記処理空間形成部材に設けられ、
前記区画機構は、前記処理空間形成部材を昇降させる昇降機構であり、
前記ステージに対する前記処理空間形成部材の高さによって、前記処理空間に対して前記バッファ領域が区画された状態と、前記処理空間と前記バッファ領域とが連通した状態とが切り替えられることを特徴とする請求項1または2記載の成膜装置。 - 前記処理空間と前記バッファ領域とは、処理空間形成部材とステージとの隙間を介して連通し、
前記処理空間形成部材及びテーブルのうちの一方には、前記処理空間及び前記隙間を囲み、当該処理空間形成部材の外側からこれら処理空間及び隙間を隔離するための突起が設けられ、
前記処理空間形成部材及びテーブルのうちの他方には、前記突起に係合する溝が設けられることを特徴とする請求項3記載の成膜装置。 - 前記バッファ領域は、ガス流路を介して処理空間に接続され、
前記区画機構は、前記ガス流路に設けられるバルブにより構成されることを特徴とする請求項1記載の成膜装置。 - 前記バッファ領域は、前記処理空間を排気する排気路を兼用し、前記区画機構は、前記排気路に設けられるバルブにより構成されることを特徴とする請求項1記載の成膜装置。
- 前記エネルギー供給部は、オゾンと化学反応して前記強制的な分解を起こすための反応ガスを前記オゾン雰囲気に供給する反応ガス供給部により構成されることを特徴とする請求項1ないし6のいずれか一つに記載の成膜装置。
- 前記反応ガスは一酸化窒素であることを特徴とする請求項7記載の成膜装置。
- 真空容器内に形成された真空雰囲気で、テーブルに載置された基板の表面に酸化物の分子層を積層して薄膜を得る成膜方法において、
前記テーブル上にて周方向に配置される第1の領域及び第2の領域に対して当該テーブルを相対的に回転させ、前記基板を第1の領域と第2の領域とに交互に繰り返し位置させる工程と、
前記基板に原料を吸着させるために、前記原料を気体の状態で原料ガスとして第1の領域に供給する工程と、
前記第1の領域から隔離された処理空間を前記第2の領域に位置する基板の周囲に形成するために、処理空間形成部材を当該テーブルに対して相対的に昇降させる工程と、
前記処理空間に連鎖分解反応を起こす濃度以上の濃度のオゾンを含むオゾン雰囲気を形成するための雰囲気ガスを供給する工程と、
前記オゾン雰囲気にエネルギーを供給してオゾンを強制的に分解させることにより酸素の活性種を発生させ、当該活性種により前記基板の表面に吸着されている原料を酸化して前記酸化物を得る工程と、
前記オゾンの分解による前記処理空間の圧力上昇を緩和するために設けられるバッファ領域に不活性ガスを供給する工程と、
次いで、前記雰囲気ガスが前記処理空間に供給されるときには当該処理空間に対して区画されていた前記バッファ領域を、前記オゾンの分解が起きるときには前記処理空間に対して連通させる工程と、
を備えることを特徴とする成膜方法。 - 前記バッファ領域を処理空間に対して連通させる工程は、
前記雰囲気ガス供給工程を行った後、前記エネルギー供給工程を行う前に行うことを特徴とする請求項9記載の成膜方法。 - 前記エネルギーの供給は、オゾンと化学反応して前記強制的な分解を起こすための反応ガスを前記オゾン雰囲気に供給することにより行われることを特徴とする請求項9または10記載の成膜方法。
- 前記反応ガスは一酸化窒素であることを特徴とする請求項11記載の成膜方法。
- 真空容器内に形成された真空雰囲気で、基板の表面に酸化物の分子層を積層して薄膜を得る成膜装置に用いられるコンピュータプログラムを格納した記憶媒体において、
前記コンピュータプログラムは、請求項9ないし12のいずれか一つに記載の成膜方法を実施するようにステップが組まれていることを特徴とする記憶媒体。
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Also Published As
Publication number | Publication date |
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US20150361550A1 (en) | 2015-12-17 |
KR101885947B1 (ko) | 2018-08-06 |
TWI592511B (zh) | 2017-07-21 |
JP6225842B2 (ja) | 2017-11-08 |
CN105200393B (zh) | 2018-10-19 |
KR20150145183A (ko) | 2015-12-29 |
CN105200393A (zh) | 2015-12-30 |
TW201615884A (zh) | 2016-05-01 |
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