JP2015533029A5 - - Google Patents
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- JP2015533029A5 JP2015533029A5 JP2015539935A JP2015539935A JP2015533029A5 JP 2015533029 A5 JP2015533029 A5 JP 2015533029A5 JP 2015539935 A JP2015539935 A JP 2015539935A JP 2015539935 A JP2015539935 A JP 2015539935A JP 2015533029 A5 JP2015533029 A5 JP 2015533029A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- gas
- thin film
- etching
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007789 gas Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 18
- 239000007800 oxidant agent Substances 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- LMSLTAIWOIYSGZ-LWMBPPNESA-N (3s,4s)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-LWMBPPNESA-N 0.000 claims description 4
- NLOLSXYRJFEOTA-OWOJBTEDSA-N (e)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C\C(F)(F)F NLOLSXYRJFEOTA-OWOJBTEDSA-N 0.000 claims description 4
- NLOLSXYRJFEOTA-UPHRSURJSA-N (z)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C/C(F)(F)F NLOLSXYRJFEOTA-UPHRSURJSA-N 0.000 claims description 4
- CCVRBOAAPJPHKL-UHFFFAOYSA-N 1,1,2,2,3-pentafluorocyclobutane Chemical compound FC1CC(F)(F)C1(F)F CCVRBOAAPJPHKL-UHFFFAOYSA-N 0.000 claims description 4
- QMIWYOZFFSLIAK-UHFFFAOYSA-N 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene Chemical compound FC(F)(F)C(=C)C(F)(F)F QMIWYOZFFSLIAK-UHFFFAOYSA-N 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- LMSLTAIWOIYSGZ-XIXRPRMCSA-N (3s,4r)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-XIXRPRMCSA-N 0.000 claims description 3
- AKQMZZOTFNLAQJ-UHFFFAOYSA-N 1,1,2,2-tetrafluorocyclobutane Chemical compound FC1(F)CCC1(F)F AKQMZZOTFNLAQJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 4
- 238000001020 plasma etching Methods 0.000 claims 4
- 239000010408 film Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 101710178035 Chorismate synthase 2 Proteins 0.000 claims 1
- 101710152694 Cysteine synthase 2 Proteins 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261720139P | 2012-10-30 | 2012-10-30 | |
| US61/720,139 | 2012-10-30 | ||
| PCT/US2013/067415 WO2014070838A1 (en) | 2012-10-30 | 2013-10-30 | Fluorocarbon molecules for high aspect ratio oxide etch |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017233163A Division JP6527214B2 (ja) | 2012-10-30 | 2017-12-05 | エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015533029A JP2015533029A (ja) | 2015-11-16 |
| JP2015533029A5 true JP2015533029A5 (https=) | 2016-11-17 |
| JP6257638B2 JP6257638B2 (ja) | 2018-01-10 |
Family
ID=50628017
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015539935A Active JP6257638B2 (ja) | 2012-10-30 | 2013-10-30 | 高アスペクト比酸化物エッチング用のフルオロカーボン分子 |
| JP2017233163A Active JP6527214B2 (ja) | 2012-10-30 | 2017-12-05 | エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法 |
| JP2019088964A Active JP6811284B2 (ja) | 2012-10-30 | 2019-05-09 | ３ｄ ｎａｎｄフラッシュメモリの製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017233163A Active JP6527214B2 (ja) | 2012-10-30 | 2017-12-05 | エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法 |
| JP2019088964A Active JP6811284B2 (ja) | 2012-10-30 | 2019-05-09 | ３ｄ ｎａｎｄフラッシュメモリの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9514959B2 (https=) |
| JP (3) | JP6257638B2 (https=) |
| KR (3) | KR101564182B1 (https=) |
| CN (2) | CN104885203B (https=) |
| SG (3) | SG10202113236SA (https=) |
| TW (2) | TWI588240B (https=) |
| WO (1) | WO2014070838A1 (https=) |
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| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
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