CN104885203B - 用于高纵横比氧化物蚀刻的氟碳分子 - Google Patents

用于高纵横比氧化物蚀刻的氟碳分子 Download PDF

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Publication number
CN104885203B
CN104885203B CN201380068688.0A CN201380068688A CN104885203B CN 104885203 B CN104885203 B CN 104885203B CN 201380068688 A CN201380068688 A CN 201380068688A CN 104885203 B CN104885203 B CN 104885203B
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plasma
etching
gas
silicon
hexafluoro
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CN104885203A (zh
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C·安德森
R·古普塔
V·M·奥马尔吉
N·斯塔福德
C·杜萨拉
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C17/00—Preparation of halogenated hydrocarbons
    • C07C17/26—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton
    • C07C17/263—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C19/00—Acyclic saturated compounds containing halogen atoms
    • C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C21/00—Acyclic unsaturated compounds containing halogen atoms
    • C07C21/02—Acyclic unsaturated compounds containing halogen atoms containing carbon-to-carbon double bonds
    • C07C21/18—Acyclic unsaturated compounds containing halogen atoms containing carbon-to-carbon double bonds containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C23/00—Compounds containing at least one halogen atom bound to a ring other than a six-membered aromatic ring
    • C07C23/02—Monocyclic halogenated hydrocarbons
    • C07C23/06—Monocyclic halogenated hydrocarbons with a four-membered ring
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/04—Systems containing only non-condensed rings with a four-membered ring

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
  • Plasma Technology (AREA)
CN201380068688.0A 2012-10-30 2013-10-30 用于高纵横比氧化物蚀刻的氟碳分子 Active CN104885203B (zh)

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US201261720139P 2012-10-30 2012-10-30
US61/720,139 2012-10-30
PCT/US2013/067415 WO2014070838A1 (en) 2012-10-30 2013-10-30 Fluorocarbon molecules for high aspect ratio oxide etch

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US (3) US9514959B2 (https=)
JP (3) JP6257638B2 (https=)
KR (3) KR101564182B1 (https=)
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SG (3) SG10202113236SA (https=)
TW (2) TWI588240B (https=)
WO (1) WO2014070838A1 (https=)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
JP2015170763A (ja) * 2014-03-07 2015-09-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2015156272A1 (ja) * 2014-04-08 2015-10-15 二プロ株式会社 医療用弁
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
JP6360770B2 (ja) * 2014-06-02 2018-07-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
TWI658509B (zh) 2014-06-18 2019-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質
KR102333443B1 (ko) * 2014-10-24 2021-12-02 삼성전자주식회사 반도체 소자의 제조 방법
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
SG11201705639VA (en) 2015-01-22 2017-08-30 Zeon Corp Plasma etching method
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
JP2017092376A (ja) * 2015-11-16 2017-05-25 東京エレクトロン株式会社 エッチング方法
US9728421B2 (en) * 2015-12-31 2017-08-08 International Business Machines Corporation High aspect ratio patterning of hard mask materials by organic soft masks
WO2018052494A1 (en) * 2016-09-14 2018-03-22 Mattson Technology, Inc. Strip process for high aspect ratio structure
WO2018102088A1 (en) * 2016-11-29 2018-06-07 Lam Research Corporation Method for generating vertical profiles in organic layer etches
KR102805391B1 (ko) 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
EP3608945A4 (en) * 2017-04-06 2020-12-23 Kanto Denka Kogyo Co., Ltd. COMPOSITION OF DRY ENGRAVING GAS AND DRY ENGRAVING PROCESS
JP6896522B2 (ja) 2017-06-27 2021-06-30 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード エッチング方法およびプラズマエッチング用材料
US11075084B2 (en) 2017-08-31 2021-07-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Chemistries for etching multi-stacked layers
US10410878B2 (en) * 2017-10-31 2019-09-10 American Air Liquide, Inc. Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications
US11270889B2 (en) * 2018-06-04 2022-03-08 Tokyo Electron Limited Etching method and etching apparatus
JP7030648B2 (ja) * 2018-08-09 2022-03-07 キオクシア株式会社 半導体装置の製造方法およびエッチングガス
JP7173799B2 (ja) * 2018-09-11 2022-11-16 キオクシア株式会社 半導体装置の製造方法およびエッチングガス
JP6666601B2 (ja) * 2018-11-22 2020-03-18 東京エレクトロン株式会社 多孔質膜をエッチングする方法
JP6874778B2 (ja) * 2019-01-09 2021-05-19 ダイキン工業株式会社 シクロブタンの製造方法
SG11202110681SA (en) * 2019-03-27 2021-10-28 Daikin Ind Ltd Method for producing halogenated cycloalkane compound
US11978600B2 (en) 2019-06-21 2024-05-07 Hitachi Energy Ltd Dielectric-insulation or arc-extinction fluid
JP7493378B2 (ja) * 2019-07-05 2024-05-31 東京エレクトロン株式会社 エッチング処理方法及び基板処理装置
US11688650B2 (en) * 2019-07-05 2023-06-27 Tokyo Electron Limited Etching method and substrate processing apparatus
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN113035706A (zh) * 2019-12-25 2021-06-25 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀方法和刻蚀装置
KR102461689B1 (ko) * 2020-05-04 2022-10-31 아주대학교산학협력단 펜타플루오로프로판올(pentafluoropropanol)을 이용한 플라즈마 식각 방법
KR102244862B1 (ko) * 2020-08-04 2021-04-27 (주)원익머트리얼즈 식각 가스 혼합물과 이를 이용한 패턴 형성 방법
JPWO2022080275A1 (https=) * 2020-10-15 2022-04-21
JPWO2022080272A1 (https=) * 2020-10-15 2022-04-21
IL302124A (en) * 2020-10-15 2023-06-01 Resonac Corp Etching gas, etching method and method for manufacturing a semiconductor device
CN116325088A (zh) * 2020-10-15 2023-06-23 株式会社力森诺科 蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法
US20250122977A1 (en) * 2020-10-15 2025-04-17 Resonac Corporation Gas-filled container and method of storing (e)-1,1,1,4,4,4,-hexafluoro-2-butene
CN116472258A (zh) * 2020-10-15 2023-07-21 株式会社力森诺科 氟-2-丁烯的保存方法
US20230373887A1 (en) * 2020-10-15 2023-11-23 Resonac Corporation Method for storing fluorobutene
JP7786388B2 (ja) * 2020-10-15 2025-12-16 株式会社レゾナック エッチングガス、エッチング方法、及び半導体素子の製造方法
KR102924126B1 (ko) * 2020-10-15 2026-02-06 가부시끼가이샤 레조낙 플루오로-2-부텐의 보관 방법
KR102924118B1 (ko) * 2020-10-15 2026-02-09 가부시끼가이샤 레조낙 플루오로부텐의 보관 방법
US12106971B2 (en) * 2020-12-28 2024-10-01 American Air Liquide, Inc. High conductive passivation layers and method of forming the same during high aspect ratio plasma etching
KR102244885B1 (ko) * 2021-02-03 2021-04-27 (주)원익머트리얼즈 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정
KR102927170B1 (ko) 2021-03-24 2026-02-11 삼성전자 주식회사 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법
CN115483092A (zh) * 2021-06-15 2022-12-16 芯恩（青岛）集成电路有限公司 一种半导体结构中的沟槽顶角的圆化方法及半导体结构
US12224177B2 (en) 2022-02-08 2025-02-11 American Air Liquide, Inc. Method of running an etch process in higher selectivity to mask and polymer regime by using a cyclic etch process
KR20230121424A (ko) 2022-02-11 2023-08-18 삼성전자주식회사 반도체 소자
CN114566431A (zh) * 2022-02-21 2022-05-31 中船(邯郸)派瑞特种气体股份有限公司 一种低损伤刻蚀多孔有机硅酸盐材料的方法
KR20250042780A (ko) * 2022-07-22 2025-03-27 어플라이드 머티어리얼스, 인코포레이티드 실리콘 기재의 유전체 필름을 퇴적하는 방법
CN117625196A (zh) * 2022-08-15 2024-03-01 中微半导体设备(上海)股份有限公司 一种化合物的用途、刻蚀方法及等离子体处理装置
KR102595941B1 (ko) * 2022-09-20 2023-10-27 성균관대학교산학협력단 플라즈마 식각 방법 및 플라즈마 식각 장치
US20240096640A1 (en) * 2022-09-20 2024-03-21 Tokyo Electron Limited High Aspect Ratio Contact (HARC) Etch
US20250079183A1 (en) 2023-08-28 2025-03-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Cryogenic plasma etching using c2h2f2
US12610765B2 (en) * 2023-09-03 2026-04-21 Nanya Technology Corporation Manufacturing method of semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4711698A (en) * 1985-07-15 1987-12-08 Texas Instruments Incorporated Silicon oxide thin film etching process
US6322715B1 (en) * 1996-10-30 2001-11-27 Japan As Represented By Director General Of The Agency Of Industrial Science And Technology Gas composition for dry etching and process of dry etching
US20100190343A1 (en) * 2009-01-28 2010-07-29 Asm America, Inc. Load lock having secondary isolation chamber
CN101816056A (zh) * 2007-10-05 2010-08-25 三箭株式会社 键盘及其制造方法
US20100264116A1 (en) * 2007-09-28 2010-10-21 Zeon Corporation Plasma etching method
CN101911263A (zh) * 2008-01-04 2010-12-08 美光科技公司 蚀刻高纵横比接触的方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2570726B2 (ja) * 1987-03-05 1997-01-16 ミノルタ株式会社 摩擦帯電部材
JP3253215B2 (ja) 1993-03-31 2002-02-04 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JPH06329826A (ja) * 1993-05-17 1994-11-29 Daikin Ind Ltd フルオロシクロブタン化合物からなる発泡剤
US5935877A (en) 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
US6051504A (en) * 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma
US6183655B1 (en) * 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US6228775B1 (en) * 1998-02-24 2001-05-08 Micron Technology, Inc. Plasma etching method using low ionization potential gas
US6387287B1 (en) 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
US6412984B2 (en) * 1998-05-14 2002-07-02 Nsk Ltd. Dynamic pressure bearing apparatus
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
JP4432230B2 (ja) * 2000-07-27 2010-03-17 日本ゼオン株式会社 フッ素化炭化水素の精製方法、溶剤、潤滑性重合体含有液および潤滑性重合体膜を有する物品
US6569774B1 (en) 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
US6897532B1 (en) 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US6972265B1 (en) 2002-04-15 2005-12-06 Silicon Magnetic Systems Metal etch process selective to metallic insulating materials
US20050014383A1 (en) 2003-07-15 2005-01-20 Bing Ji Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
US6972258B2 (en) 2003-08-04 2005-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for selectively controlling damascene CD bias
JP4629421B2 (ja) * 2004-12-06 2011-02-09 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
EP2258789A3 (en) 2004-12-21 2012-10-24 Honeywell International Inc. Stabilized iodocarbon compositions
US9175201B2 (en) 2004-12-21 2015-11-03 Honeywell International Inc. Stabilized iodocarbon compositions
JP4691702B2 (ja) * 2005-02-16 2011-06-01 独立行政法人産業技術総合研究所 トランス−１，１，２，２，３，４−ヘキサフルオロシクロブタンの製造方法
US20060243944A1 (en) 2005-03-04 2006-11-02 Minor Barbara H Compositions comprising a fluoroolefin
JP5131436B2 (ja) * 2007-05-31 2013-01-30 日本ゼオン株式会社 エッチング方法
EP2152833B1 (en) 2007-06-12 2014-07-23 E. I. Du Pont de Nemours and Company Azeotropic and azeotrope-like compositions of e-1,1,1,4,4,4-hexafluoro-2-butene
WO2009019219A2 (en) 2007-08-03 2009-02-12 Solvay (Société Anonyme) Methods of using a solvent or a foam blowing agent
WO2009117458A2 (en) 2008-03-19 2009-09-24 E. I. Du Pont De Nemours And Company Process for making 1,1,1,4,4,4-hexafluoro-2-butene
JP5266902B2 (ja) * 2008-06-20 2013-08-21 日本ゼオン株式会社 含フッ素オレフィン化合物の製造方法
CN102341444A (zh) * 2009-03-06 2012-02-01 苏威氟有限公司 不饱和氢氟烃的用途
JP2011060958A (ja) * 2009-09-09 2011-03-24 Toshiba Corp 半導体装置及びその製造方法
KR101790365B1 (ko) 2009-11-20 2017-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062067A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110144216A1 (en) * 2009-12-16 2011-06-16 Honeywell International Inc. Compositions and uses of cis-1,1,1,4,4,4-hexafluoro-2-butene
KR101660488B1 (ko) 2010-01-22 2016-09-28 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
US8435901B2 (en) * 2010-06-11 2013-05-07 Tokyo Electron Limited Method of selectively etching an insulation stack for a metal interconnect
TWI523900B (zh) 2010-07-20 2016-03-01 首威索勒希斯股份有限公司 氟彈性體組合物
RU2010147004A (ru) 2010-11-17 2012-05-27 Е.И.Дюпон де Немур энд Компани (US) Каталитический синтез внутренних фторбутенов и внутренних фторпентенов
JP2012174961A (ja) * 2011-02-23 2012-09-10 Toshiba Corp 半導体記憶装置の製造方法
JP5682381B2 (ja) 2011-03-09 2015-03-11 日本ゼオン株式会社 含ハロゲノフッ素化シクロアルカン、及び含水素フッ素化シクロアルカンの製造方法
US20130098396A1 (en) 2011-10-19 2013-04-25 E I Du Pont De Nemours And Company Novel 1,1,1,4,4,5,5,6,6,6-decafluorohex-2-ene isomer mixtures and uses thereof
US20130122712A1 (en) * 2011-11-14 2013-05-16 Jong Mun Kim Method of etching high aspect ratio features in a dielectric layer
KR20140135199A (ko) 2012-02-17 2014-11-25 이 아이 듀폰 디 네모아 앤드 캄파니 Z-1,1,1,4,4,4-헥사플루오로-2-부텐 및 e-1,1,1,4,4,4-헥사플루오로-2-부텐의 공비-유사 조성물 및 그의 용도
CN105917025A (zh) 2013-03-28 2016-08-31 得凯莫斯公司弗罗里达有限公司 氢氟烯烃蚀刻气体混合物
US9748366B2 (en) 2013-10-03 2017-08-29 Applied Materials, Inc. Etching oxide-nitride stacks using C4F6H2

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4711698A (en) * 1985-07-15 1987-12-08 Texas Instruments Incorporated Silicon oxide thin film etching process
US6322715B1 (en) * 1996-10-30 2001-11-27 Japan As Represented By Director General Of The Agency Of Industrial Science And Technology Gas composition for dry etching and process of dry etching
US20100264116A1 (en) * 2007-09-28 2010-10-21 Zeon Corporation Plasma etching method
CN101816056A (zh) * 2007-10-05 2010-08-25 三箭株式会社 键盘及其制造方法
CN101911263A (zh) * 2008-01-04 2010-12-08 美光科技公司 蚀刻高纵横比接触的方法
US20100190343A1 (en) * 2009-01-28 2010-07-29 Asm America, Inc. Load lock having secondary isolation chamber

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