JP2015525969A5 - - Google Patents

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Publication number
JP2015525969A5
JP2015525969A5 JP2015520484A JP2015520484A JP2015525969A5 JP 2015525969 A5 JP2015525969 A5 JP 2015525969A5 JP 2015520484 A JP2015520484 A JP 2015520484A JP 2015520484 A JP2015520484 A JP 2015520484A JP 2015525969 A5 JP2015525969 A5 JP 2015525969A5
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JP
Japan
Prior art keywords
dielectric
antifuse
integrated circuit
conductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2015520484A
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English (en)
Japanese (ja)
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JP2015525969A (ja
Filing date
Publication date
Priority claimed from US13/684,107 external-priority patent/US9502424B2/en
Application filed filed Critical
Publication of JP2015525969A publication Critical patent/JP2015525969A/ja
Publication of JP2015525969A5 publication Critical patent/JP2015525969A5/ja
Ceased legal-status Critical Current

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JP2015520484A 2012-06-29 2013-06-27 アンチヒューズを採用した集積回路デバイスおよびこのデバイスを作製する方法 Ceased JP2015525969A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261666649P 2012-06-29 2012-06-29
US61/666,649 2012-06-29
US13/684,107 2012-11-21
US13/684,107 US9502424B2 (en) 2012-06-29 2012-11-21 Integrated circuit device featuring an antifuse and method of making same
PCT/US2013/048088 WO2014004770A2 (en) 2012-06-29 2013-06-27 Integrated circuit device featuring an antifuse and method of making same

Publications (2)

Publication Number Publication Date
JP2015525969A JP2015525969A (ja) 2015-09-07
JP2015525969A5 true JP2015525969A5 (enExample) 2016-07-28

Family

ID=49777221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015520484A Ceased JP2015525969A (ja) 2012-06-29 2013-06-27 アンチヒューズを採用した集積回路デバイスおよびこのデバイスを作製する方法

Country Status (6)

Country Link
US (1) US9502424B2 (enExample)
EP (1) EP2867922A2 (enExample)
JP (1) JP2015525969A (enExample)
KR (1) KR20150033690A (enExample)
CN (1) CN104396014B (enExample)
WO (1) WO2014004770A2 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9842802B2 (en) 2012-06-29 2017-12-12 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
US20150129975A1 (en) 2013-11-13 2015-05-14 Globalfoundries Singapore Pte. Ltd. Multi-time programmable device
KR102204054B1 (ko) * 2014-03-24 2021-01-18 인텔 코포레이션 스페이서 브레이크다운을 이용한 안티퓨즈 요소
US20150279479A1 (en) * 2014-04-01 2015-10-01 Qualcomm Incorporated Anti-fuse one-time programmable resistive random access memories
US9876123B2 (en) * 2014-07-16 2018-01-23 Qualcomm Incorporated Non-volatile one-time programmable memory device
US20160093672A1 (en) * 2014-09-26 2016-03-31 Qualcomm Incorporated Logic high-k/metal gate 1t-1c rram mtp/otp devices
US9496048B2 (en) * 2015-03-12 2016-11-15 Qualcomm Incorporated Differential one-time-programmable (OTP) memory array
US9865601B2 (en) * 2015-12-16 2018-01-09 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor integrated circuit
US9852988B2 (en) 2015-12-18 2017-12-26 Invensas Bonding Technologies, Inc. Increased contact alignment tolerance for direct bonding
US9837168B1 (en) * 2016-09-15 2017-12-05 Globalfoundries Inc. Word line voltage generator for programmable memory array
US10446487B2 (en) 2016-09-30 2019-10-15 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
US10580735B2 (en) 2016-10-07 2020-03-03 Xcelsis Corporation Stacked IC structure with system level wiring on multiple sides of the IC die
FR3058567B1 (fr) * 2016-11-08 2019-01-25 Stmicroelectronics (Rousset) Sas Circuit integre comportant une structure antifusible, et procede de realisation
KR102184449B1 (ko) 2016-11-09 2020-12-01 삼성전자주식회사 반도체 소자
KR20190092584A (ko) 2016-12-29 2019-08-07 인벤사스 본딩 테크놀로지스 인코포레이티드 집적된 수동 컴포넌트를 구비한 접합된 구조체
US10276909B2 (en) 2016-12-30 2019-04-30 Invensas Bonding Technologies, Inc. Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
KR102592928B1 (ko) * 2017-01-18 2023-10-24 삼성디스플레이 주식회사 데이터 보정 장치 및 이를 포함하는 표시 장치
US10629577B2 (en) 2017-03-16 2020-04-21 Invensas Corporation Direct-bonded LED arrays and applications
WO2018183739A1 (en) 2017-03-31 2018-10-04 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
US9953990B1 (en) * 2017-08-01 2018-04-24 Synopsys, Inc. One-time programmable memory using rupturing of gate insulation
US10566253B2 (en) * 2017-11-30 2020-02-18 Nanya Technology Corporation Electronic device and electrical testing method thereof
US11169326B2 (en) 2018-02-26 2021-11-09 Invensas Bonding Technologies, Inc. Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
US11256004B2 (en) 2018-03-20 2022-02-22 Invensas Bonding Technologies, Inc. Direct-bonded lamination for improved image clarity in optical devices
DE102019109087A1 (de) 2018-05-31 2019-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Elektrische sicherung
US10923483B2 (en) 2018-05-31 2021-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. EFuse
US11515291B2 (en) 2018-08-28 2022-11-29 Adeia Semiconductor Inc. Integrated voltage regulator and passive components
US11031407B2 (en) * 2018-08-30 2021-06-08 Taiwan Semiconductor Manufacturing Company Ltd. Anti-fuse device, circuit, methods, and layout
WO2020042078A1 (zh) * 2018-08-30 2020-03-05 深圳市为通博科技有限责任公司 存储单元、存储器件以及存储单元的操作方法
KR102609372B1 (ko) 2018-08-31 2023-12-06 삼성전자주식회사 반도체 소자
US10763269B2 (en) * 2018-10-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-fuse cell and chip having anti-fuse cells
US11456303B2 (en) * 2018-12-27 2022-09-27 Nanya Technology Corporation Fuse array structure
US11901281B2 (en) 2019-03-11 2024-02-13 Adeia Semiconductor Bonding Technologies Inc. Bonded structures with integrated passive component
US11094701B2 (en) * 2019-07-17 2021-08-17 Taiwan Semiconductor Manufacturing Company Ltd. Layout structure of storage cell and method thereof
US11762200B2 (en) 2019-12-17 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded optical devices
TWI764371B (zh) * 2019-12-31 2022-05-11 台灣積體電路製造股份有限公司 積體電路元件、生成積體電路佈局圖的方法以及電子設計自動化系統
TWI734452B (zh) * 2020-04-23 2021-07-21 友達光電股份有限公司 記憶體裝置以及寫入方法
US11094388B1 (en) * 2020-07-20 2021-08-17 Winbond Electronics Corp. Anti-fuse device and program method using the same
US11282960B2 (en) * 2020-08-04 2022-03-22 Nanya Technology Corporation Semiconductor device with programmable element and method for fabricating the same
US11799001B2 (en) * 2021-03-09 2023-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Back-end-of-line devices
US11670587B2 (en) * 2021-04-16 2023-06-06 Nanya Technology Corporation Semiconductor device with copper-manganese liner and method for forming the same
CN115224034B (zh) * 2021-04-16 2025-09-09 联华电子股份有限公司 一次性可编程存储器结构
CN116113238A (zh) 2021-09-16 2023-05-12 联华电子股份有限公司 半导体存储器结构及其制作方法
KR102753760B1 (ko) * 2022-06-24 2025-01-14 창신 메모리 테크놀로지즈 아이엔씨 반도체 구조 및 제조 방법, 메모리 및 동작 방법
CN115148703A (zh) * 2022-06-29 2022-10-04 上海集成电路装备材料产业创新中心有限公司 互连结构及其制备方法
US12406741B2 (en) * 2022-08-10 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory devices with backside heater structure
CN117794234A (zh) * 2022-09-21 2024-03-29 长鑫存储技术有限公司 半导体结构及其形成方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583819A (en) * 1995-01-27 1996-12-10 Single Chip Holdings, Inc. Apparatus and method of use of radiofrequency identification tags
JPH11150187A (ja) 1997-11-17 1999-06-02 Matsushita Electron Corp 半導体集積回路装置
US6096580A (en) 1999-09-24 2000-08-01 International Business Machines Corporation Low programming voltage anti-fuse
US6794726B2 (en) 2002-04-17 2004-09-21 International Business Machines Corporation MOS antifuse with low post-program resistance
US6730573B1 (en) * 2002-11-01 2004-05-04 Chartered Semiconductor Manufacturing Ltd. MIM and metal resistor formation at CU beol using only one extra mask
US20050035429A1 (en) * 2003-08-15 2005-02-17 Yeh Chih Chieh Programmable eraseless memory
JP2005116048A (ja) 2003-10-07 2005-04-28 Elpida Memory Inc アンチフューズプログラミング回路
JP3987847B2 (ja) * 2003-10-17 2007-10-10 Ｎｅｃエレクトロニクス株式会社 Ｍｉｍ構造抵抗体を搭載した半導体装置
US7289358B2 (en) * 2004-03-30 2007-10-30 Impinj, Inc. MTP NVM elements by-passed for programming
US7402855B2 (en) 2004-05-06 2008-07-22 Sidense Corp. Split-channel antifuse array architecture
TWI266417B (en) * 2004-11-09 2006-11-11 Powerchip Semiconductor Corp One-time programmable read only memory and operating method thereof
JP4753413B2 (ja) * 2005-03-02 2011-08-24 三洋電機株式会社 不揮発性半導体記憶装置及びその製造方法
US7256471B2 (en) 2005-03-31 2007-08-14 Freescale Semiconductor, Inc. Antifuse element and electrically redundant antifuse array for controlled rupture location
WO2006126110A1 (en) 2005-05-24 2006-11-30 Nxp B.V. Anti-fuse memory device
US7280425B2 (en) * 2005-09-30 2007-10-09 Intel Corporation Dual gate oxide one time programmable (OTP) antifuse cell
US7301436B1 (en) * 2005-11-14 2007-11-27 National Semiconductor Corporation Apparatus and method for precision trimming of integrated circuits using anti-fuse bond pads
US7687882B2 (en) 2006-04-14 2010-03-30 Allegro Microsystems, Inc. Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor
US7968967B2 (en) * 2006-07-17 2011-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable anti-fuse formed using damascene process
US7868388B2 (en) * 2007-01-31 2011-01-11 Sandisk 3D Llc Embedded memory in a CMOS circuit and methods of forming the same
JP5666078B2 (ja) * 2007-07-27 2015-02-12 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． アンチヒューズ素子及びこれを有する半導体装置
JP5245324B2 (ja) * 2007-08-20 2013-07-24 日本電気株式会社 スイッチ素子を搭載した半導体装置
US20090086521A1 (en) * 2007-09-28 2009-04-02 Herner S Brad Multiple antifuse memory cells and methods to form, program, and sense the same
JP2009206490A (ja) 2008-01-30 2009-09-10 Elpida Memory Inc 半導体装置及びその製造方法
US8933492B2 (en) 2008-04-04 2015-01-13 Sidense Corp. Low VT antifuse device
US7981742B2 (en) 2008-07-02 2011-07-19 Macronic International Co., Ltd. Semiconductor device, data element thereof and method of fabricating the same
KR20100055823A (ko) * 2008-11-18 2010-05-27 주식회사 동부하이텍 안티 퓨즈를 구비하는 반도체 소자 및 그 제조 방법
WO2010096915A1 (en) 2009-02-27 2010-09-02 Sidense Corp. Low power antifuse sensing scheme with improved reliability
EP2405479A4 (en) * 2009-03-02 2013-12-04 Murata Manufacturing Co Anti-fuse device
WO2011010702A1 (ja) 2009-07-22 2011-01-27 株式会社村田製作所 アンチヒューズ素子
JP2011187472A (ja) 2010-03-04 2011-09-22 Elpida Memory Inc 半導体装置
US8519509B2 (en) 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20120061796A1 (en) 2010-09-14 2012-03-15 Power Gold LLC Programmable anti-fuse wire bond pads
US9842802B2 (en) 2012-06-29 2017-12-12 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
US8975724B2 (en) 2012-09-13 2015-03-10 Qualcomm Incorporated Anti-fuse device

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