US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
US9064815B2
(en)
|
2011-03-14 |
2015-06-23 |
Applied Materials, Inc. |
Methods for etch of metal and metal-oxide films
|
US9869392B2
(en)
|
2011-10-20 |
2018-01-16 |
Lam Research Corporation |
Edge seal for lower electrode assembly
|
US9859142B2
(en)
|
2011-10-20 |
2018-01-02 |
Lam Research Corporation |
Edge seal for lower electrode assembly
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
US9373517B2
(en)
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
JP5985316B2
(ja)
*
|
2012-09-07 |
2016-09-06 |
東京エレクトロン株式会社 |
プラズマエッチング装置
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
JP6140457B2
(ja)
*
|
2013-01-21 |
2017-05-31 |
東京エレクトロン株式会社 |
接着方法、載置台及び基板処理装置
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
JP6400273B2
(ja)
*
|
2013-03-11 |
2018-10-03 |
新光電気工業株式会社 |
静電チャック装置
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
KR102197189B1
(ko)
*
|
2013-05-28 |
2020-12-31 |
주성엔지니어링(주) |
기판 지지 장치
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
US10090211B2
(en)
|
2013-12-26 |
2018-10-02 |
Lam Research Corporation |
Edge seal for lower electrode assembly
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9903020B2
(en)
|
2014-03-31 |
2018-02-27 |
Applied Materials, Inc. |
Generation of compact alumina passivation layers on aluminum plasma equipment components
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
US9728437B2
(en)
*
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
WO2016153582A1
(en)
*
|
2015-03-20 |
2016-09-29 |
Applied Materials, Inc. |
Ceramic electrostatic chuck bonded with high temperature polymer bond to metal base
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
US10256131B2
(en)
|
2015-08-27 |
2019-04-09 |
Sumitomo Osaka Cement Co., Ltd. |
Electrostatic chuck device
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
US10340171B2
(en)
|
2016-05-18 |
2019-07-02 |
Lam Research Corporation |
Permanent secondary erosion containment for electrostatic chuck bonds
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10770270B2
(en)
|
2016-06-07 |
2020-09-08 |
Applied Materials, Inc. |
High power electrostatic chuck with aperture-reducing plug in a gas hole
|
JP6606017B2
(ja)
*
|
2016-06-07 |
2019-11-13 |
株式会社荏原製作所 |
基板処理装置
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
US20180019104A1
(en)
*
|
2016-07-14 |
2018-01-18 |
Applied Materials, Inc. |
Substrate processing chamber component assembly with plasma resistant seal
|
KR101758347B1
(ko)
*
|
2016-08-01 |
2017-07-18 |
주식회사 엘케이엔지니어링 |
정전 척 및 리페어 방법
|
JP6664298B2
(ja)
|
2016-09-09 |
2020-03-13 |
株式会社バルカー |
シール材
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
US10943808B2
(en)
|
2016-11-25 |
2021-03-09 |
Applied Materials, Inc. |
Ceramic electrostatic chuck having a V-shape seal band
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
US10910195B2
(en)
|
2017-01-05 |
2021-02-02 |
Lam Research Corporation |
Substrate support with improved process uniformity
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
TWI716818B
(zh)
|
2018-02-28 |
2021-01-21 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
US11776822B2
(en)
*
|
2018-05-29 |
2023-10-03 |
Applied Materials, Inc. |
Wet cleaning of electrostatic chuck
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
CN110875230B
(zh)
*
|
2018-08-29 |
2022-06-14 |
北京华卓精科科技股份有限公司 |
静电卡盘保护结构、灌胶装置以及灌胶工艺
|
CN110890305B
(zh)
*
|
2018-09-10 |
2022-06-14 |
北京华卓精科科技股份有限公司 |
静电卡盘
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
JP6700362B2
(ja)
*
|
2018-09-28 |
2020-05-27 |
日本特殊陶業株式会社 |
半導体製造用部品
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
JP7203585B2
(ja)
*
|
2018-12-06 |
2023-01-13 |
東京エレクトロン株式会社 |
基板支持器、基板処理装置、基板処理システム、及び基板支持器における接着剤の浸食を検出する方法
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
Applied Materials, Inc. |
Ceramic showerheads with conductive electrodes
|
CN111863699B
(zh)
*
|
2019-04-28 |
2023-12-22 |
北京北方华创微电子装备有限公司 |
承载装置及工艺腔室
|
KR102640172B1
(ko)
|
2019-07-03 |
2024-02-23 |
삼성전자주식회사 |
기판 처리 장치 및 이의 구동 방법
|
JP7339062B2
(ja)
*
|
2019-08-09 |
2023-09-05 |
東京エレクトロン株式会社 |
載置台及び基板処理装置
|
JP7353106B2
(ja)
*
|
2019-09-09 |
2023-09-29 |
日本特殊陶業株式会社 |
保持装置
|
JP7281374B2
(ja)
*
|
2019-09-09 |
2023-05-25 |
日本特殊陶業株式会社 |
保持装置および保持装置の製造方法
|
KR102688688B1
(ko)
|
2019-10-10 |
2024-07-25 |
엘지전자 주식회사 |
영상을 압축 또는 복원하기 위한 방법 및 장치
|
JP7445420B2
(ja)
*
|
2019-12-23 |
2024-03-07 |
日本特殊陶業株式会社 |
半導体製造装置用部品
|
JP7308767B2
(ja)
|
2020-01-08 |
2023-07-14 |
東京エレクトロン株式会社 |
載置台およびプラズマ処理装置
|
KR20230004790A
(ko)
*
|
2020-04-29 |
2023-01-06 |
어플라이드 머티어리얼스, 인코포레이티드 |
균일성 개선을 위한 히터 커버 플레이트
|
JP7509586B2
(ja)
|
2020-06-17 |
2024-07-02 |
日本特殊陶業株式会社 |
保持装置
|
US20220028720A1
(en)
*
|
2020-07-22 |
2022-01-27 |
Applied Materials, Inc. |
Lift pin interface in a substrate support
|
KR102644585B1
(ko)
|
2020-08-21 |
2024-03-06 |
세메스 주식회사 |
기판 처리 장치 및 이의 제조 방법
|
JP7425034B2
(ja)
*
|
2021-12-01 |
2024-01-30 |
三菱電線工業株式会社 |
保護リング、それを備えた接着面保護構造、及び接着面保護方法
|